ECSCRM is a biannual scientific event that explores, presents and discusses the new achievements in the field of wide-bandgap semiconductors focusing on silicon carbide. It is an international gathering of scientists and engineers who are active in the research and technology of this field and serves as a platform for exchanging ideas on recent scientific and technical developments between the industrial, academic and public sectors.
ECSCRM addresses advances in both basic research, as well as technology of this scientific field. For the former, the aim of the conference is to discuss the latest progress in basic research issues such as theoretical and experimental investigations of crystal growth, characterization and control of material properties, as well as other research issues of silicon carbide and related materials. For the latter, the ambition of the conference is to debate new research results relevant to wafer production processes, device fabrication technologies and device applications and to analyze their impact on the goals of the industry towards the development and commercialization of advanced devices and circuits for energy saving, high voltage switching, high frequency, high power and high temperature applications.