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* 89. Mechanisms of silicon surface passivation by negatively charged hafnium oxide thin filmsLink opens in a new window
A. Wratten, S.L. Pain, D. Walker, A.B. Renz, E. Khorani, T. Niewelt, N.E. Grant, J.D. Murphy
IEEE Journal of Photovoltaics, 13 40 (2023)
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88. SiNx and AlOx nanolayers in hole selective passivating contacts for high efficiency silicon solar cellsLink opens in a new window
S. McNab, X. Niu, E. Khorani, A. Wratten, A. Morisset, N.E. Grant, J.D. Murphy, P.P. Altermatt, M. Wright, P.R. Wilshaw, R.S. Bonilla
IEEE Journal of Photovoltaics, 13 22 (2023)

87. Terahertz photoconductance dynamics of semiconductors from sub-nanosecond to millisecond timescalesLink opens in a new window
E. Butler-Caddle, N.E. Grant, S.L. Pain, J.D. Murphy, K.D.G.I. Jayawardena, J. Lloyd-Hughes
Applied Physics Letters, 122 012101 (2023)

* 86. Engineering the carrier lifetime and switching speed in Si-based mm-wave photomodulatorsLink opens in a new window
I.R. Hooper, E. Khorani, X. Romain, L. E. Barr, T. Niewelt, S. Saxena, A. Wratten, N.E. Grant, J.D. Murphy, E. Hendry
Journal of Applied Physics, 132 233102 (2022)
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85. Towards high efficiency inversion layer cells based on ion-charged dielectricsLink opens in a new window
M. Yu, M. Wright, J. Chen, Y. Shi, B. Hallam, E.T. Hwu, N.E. Grant, J.D. Murphy, P.P. Altermatt, P. Wilshaw, R.S. Bonilla
Proceedings of the 8th World Conference on Photovoltaic Energy Conversion, pages 44 to 54 (2022).

* 84. Electronic characteristics of ultra-thin passivation layers for silicon photovoltaicsLink opens in a new window
S.L. Pain, E. Khorani, T. Niewelt, A. Wratten, G.J. Paez Fajardo, B.P. Winfield, R.S. Bonilla, M. Walker, L.F.J. Piper, N.E. Grant, J.D. Murphy
Advanced Materials Interfaces, 9 2201339 (2022)
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* 83. Formation and elimination of electrically active thermally-induced defects in float-zone-grown silicon crystalsLink opens in a new window
J.A.T. De Guzman, V.P. Markevich, J. Mullins, N. Grant, J.D. Murphy, D. Hiller, M.P. Halsall, A.R. Peaker
AIP Conference Proceedings, 2487 130003 (2022)
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* 82. Carrier lifetimes in high-lifetime silicon wafers and solar cells measured by photoexcited muon spin spectroscopyLink opens in a new window
J.D. Murphy, N.E. Grant, S.L. Pain, T. Niewelt, A. Wratten, E. Khorani, V.P. Markevich, A.R. Peaker, P.P. Altermatt, J.S. Lord, K. Yokoyama
Journal of Applied Physics, 132 065704 (2022)
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* 81. The improved reliability performance of post-deposition annealed ALD-SiO2Link opens in a new window
A.B. Renz, O.J. Vavasour, P.M. Gammon, F. Li, T. Dai, G.W.C. Baker, N.E. Grant, J.D. Murphy, P.A. Mawby, V.A. Shah
Materials Science Forum, 1062 325 (2022)
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80. Improved reliability of 4H-SiC metal-oxide-semiconductor devices utilising atomic layer deposited layers with enhanced interface qualityLink opens in a new window
A. B. Renz, O. J. Vavasour, J.A. Gott, P. M. Gammon, F. Li, T. Dai, G. W. C. Baker, N. E. Grant, J. D. Murphy, P.A. Mawby, V.A. Shah
ECS Transactions, 108 (2) 43 (2022)

* 79. Enhanced surface passivation of sub-nanometer silicon dioxide films by superacidic treatmentsLink opens in a new window
N.E. Grant, S.L. Pain, J.T. White, M. Walker, I. Prokes, J.D. Murphy
ACS Applied Energy Materials, 5 1542 (2022)
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* 78. Room temperature enhancement of electronic materials by superacid analoguesLink opens in a new window
S.L. Pain, N.E. Grant, J.D. Murphy
ACS Nano, 16 1260 (2022)
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* 77. Reassessment of the intrinsic bulk recombination in crystalline siliconLink opens in a new window
T. Niewelt, B. Steinhauser, A. Richter, B. Veith-Wolf, A. Fell, B. Hammann, N.E. Grant, L. Black, J. Tan, A. Youssef, J.D. Murphy, J. Schmidt, M.C. Schubert, S.W. Glunz
Solar Energy Materials and Solar Cells, 235 111467 (2022)
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* 76. Initial investigations into the MOS interface of freestanding 3C-SiC layers for device applicationsLink opens in a new window
A.B. Renz, F. Li, O.J. Vavasour, P.M. Gammon, T. Dai, G.W.C. Baker, F. La Via, M. Zielinski, L. Zhang, N.E. Grant, J.D. Murphy, P.A. Mawby, M. Jennings, V.A. Shah
Semiconductor Science and Technology, 36 055006 (2021)
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* 75. Gallium-doped silicon for high-efficiency commercial passivated emitter and rear solar cellsLink opens in a new window
N.E. Grant, P.P. Altermatt, T. Niewelt, R. Post, W. Kwapil, M.C. Schubert, J.D. Murphy
Solar RRL, 5 2000754 (2021)
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* 74. Experimental and theoretical study of oxygen precipitation and the resulting limitation of silicon solar cell wafersLink opens in a new window
J. Schön, T. Niewelt, D. Mu, S. Maus, A. Wolf, J.D. Murphy, M.C. Schubert
IEEE Journal of Photovoltaics, 11 289 (2021)
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73. Electrical characterization of thermally activated defects in n-type float-zone siliconLink opens in a new window
Y. Zhu, F. Rougieux, N.E. Grant, J.A.T. De Guzman, J.D. Murphy, V.P. Markevich, G. Coletti, A.R. Peaker, Z. Hameiri
IEEE Journal of Photovoltaics, 11 26 (2021)

* 72. The improvement of atomic layer deposited SiO2/4H-SiC interfaces via a high temperature forming gas anneal Link opens in a new window
A.B. Renz, O.J. Vavasour, P.M. Gammon, F. Li, T. Dai, M. Antoniou, G.W.C. Baker, E. Bashar, N.E. Grant, J.D. Murphy, P.A. Mawby, V.A. Shah
Materials Science in Semiconductor Processing, 122 105527 (2021)
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71. Kinetics of bulk lifetime degradation in float-zone (FZ) silicon: fast activation and annihilation of grown-in defects and the role of hydrogen vs. lightLink opens in a new window
D. Hiller, V.P. Markevich, J.A.T. de Guzman, D. König, S. Prucnal, W. Bock, J. Julin, A.R. Peaker, D. Macdonald, N.E. Grant, J.D. Murphy
Physica Status Solidi A, 217 2000436 (2020)

* 70. Atomic level termination for passivation and functionalisation of silicon surfacesLink opens in a new window
N.E. Grant, A.I. Pointon, R. Jefferies, D. Hiller, Y. Han, R. Beanland, M. Walker, J.D. Murphy
Nanoscale, 12 17332 (2020)
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69. Development of high-quality gate oxide on 4H‐SiC using atomic layer depositionLink opens in a new window
A.B. Renz, O.J. Vavasour, P.M. Gammon, F. Li, T. Dai, G.W.C. Baker, N.E. Grant, J.D. Murphy, P.A. Mawby, V.A. Shah
Materials Science Forum, 1004 547 (2020)

* 68. Sub-2 cm/s passivation of silicon surfaces by aprotic solutionsLink opens in a new window
A.I. Pointon, N.E. Grant, S.L. Pain, J.T. White, J.D. Murphy
Applied Physics Letters, 116 121601 (2020)
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* 67. Lifetime instabilities in gallium doped monocrystalline PERC silicon solar cellsLink opens in a new window
N.E. Grant, J.R. Scowcroft, A.I. Pointon, M. Al-Amin, P.P. Altermatt, J.D. Murphy
Solar Energy Materials and Solar Cells, 206 110299 (2020)
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* 66. High efficiency photomodulators for millimeter wave and THz radiationLink opens in a new window
I.R. Hooper, N.E. Grant, L.E. Barr, S.M. Hornett, J.D. Murphy, E. Hendry
Scientific Reports, 9 18304 (2019)
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* 65. Minority carrier lifetime in indium doped silicon for photovoltaicsLink opens in a new window
J.D. Murphy, A.I. Pointon, N.E. Grant, V.A. Shah, M. Myronov, V.V. Voronkov, R.J. Falster
Progress in Photovoltaics: Research and Applications, 27 844 (2019)
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64. Effects of neutron irradiation on the brittle to ductile transition in single crystal tungstenLink opens in a new window
R.G. Abernethy, J.S.K.-L. Gibson, A. Giannattasio, J.D. Murphy, O. Wouters, S. Bradnam, L.W. Packer, M.R. Gilbert, M. Klimenkov, M. Rieth, H.-C. Schneider, C.D. Hardie, S.G. Roberts, D.E.J. Armstrong
Journal of Nuclear Materials, 527 151799 (2019)

63. Iodine-ethanol surface passivation for measurement of millisecond carrier lifetimes in silicon wafers with different crystallographic orientationsLink opens in a new window
M. Al-Amin, N.E. Grant, A.I. Pointon, J.D. Murphy
Physica Status Solidi A, 216 1900257 (2019)

* 62. Anodic oxidations: excellent process durability and surface passivation for high efficiency silicon solar cellsLink opens in a new window
N.E. Grant, T.C. Kho, K.C. Fong, E. Franklin, K.R. McIntosh, M. Stocks, Y. Wan, E-C. Wang, N.S. Zin, J.D. Murphy, A. Blakers
Solar Energy Materials and Solar Cells, 203 110155 (2019)
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* 61. New insights into the thermally activated defects in n-type float-zone siliconLink opens in a new window
Y. Zhu, F. Rougieux, N. Grant, J. Mullins, J.A. De Guzman, J.D. Murphy, V.P. Markevich, G. Coletti, A.R. Peaker, Z. Hameiri
AIP Conference Proceedings, 2147, 140014 (2019)
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* 60. Exceptional surface passivation arising from bis(trifluoromethanesulfonyl)-based solutionsLink opens in a new window
A.I. Pointon, N.E. Grant, R.S. Bonilla, E.C. Wheeler-Jones, M. Walker, P.R. Wilshaw, C.E.J. Dancer, J.D. Murphy
ACS Applied Electronic Materials, 1 1322 (2019)
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* 59. Impact of iron on the room temperature luminescence efficiency of oxygen-containing precipitates in siliconLink opens in a new window
K. Bothe, S. Herlufsen, J.D. Murphy
Semiconductor Science and Technology, 34 035030 (2019)
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58. Microstructural evolution of mechanically deformed polycrystalline silicon for kerfless photovoltaicsLink opens in a new window
M. Wu, J.D. Murphy, J. Jiang, P.R. Wilshaw, A.J. Wilkinson
Physica Status Solidi A, 216 1800578 (2019)

* 57. Thermally activated defects in float zone silicon: effect of nitrogen on the introduction of deep level statesLink opens in a new window
J. Mullins, V.P. Markevich, M. Vaqueiro-Contreras, N.E. Grant, L. Jensen, J. Jabłoński, J.D. Murphy, M.P. Halsall, A.R. Peaker
Journal of Applied Physics, 124 035701 (2018)
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* 56. Taking monocrystalline silicon to the ultimate lifetime limitLink opens in a new window
T. Niewelt, A. Richter, T.C. Kho, N.E. Grant, R.S. Bonilla, B. Steinhauser, J.-I. Polzin, F. Feldmann, M. Hermle, J.D. Murphy, S.P. Phang, W. Kwapil, M.C. Schubert
Solar Energy Materials and Solar Cells, 185 252 (2018)
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* 55. Superacid-derived surface passivation for measurement of ultra-long lifetimes in silicon photovoltaic materialsLink opens in a new window
A.I. Pointon, N.E. Grant, E.C. Wheeler-Jones, P.P. Altermatt, J.D. Murphy
Solar Energy Materials and Solar Cells, 183 164 (2018)
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* 54. Minimising bulk lifetime degradation during the processing of interdigitated back contact silicon solar cellsLink opens in a new window
T. Rahman, A. To, M.E. Pollard, N.E. Grant, J. Colwell, D.N.R. Payne, J.D. Murphy, D.M. Bagnall, B. Hoex, S.A. Boden
Progress in Photovoltaics: Research and Applications, 26 38 (2018)
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53. The gettering effect of dielectric films for silicon solar cellsLink opens in a new window
A.Y. Liu, C. Sun, V.P. Markevich, A.R. Peaker, J.D. Murphy, and D. Macdonald
Proceedings of the 44th IEEE Photovoltaics Specialist Conference (PVSC 2017), pages 1485 to 1490 (2017)

* 52. Temporary surface passivation for characterisation of bulk defects in silicon: a reviewLink opens in a new window
N.E. Grant, J.D. Murphy
Physica Status Solidi Rapid Research Letters, 11 1700243 (2017)
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* 51. Superacid-treated silicon surfaces: extending the limit of carrier lifetime for photovoltaic applications
N.E. Grant, T. Niewelt, N.R. Wilson, E.C. Wheeler-Jones, J. Bullock, M. Al-Amin, M.C. Schubert, A.C. van Veen, A. Javey, J.D. Murphy
IEEE Journal of Photovoltaics, 7 1574 (2017)
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* 50. Combining low-temperature gettering with phosphorus diffusion gettering for improved multicrystalline siliconLink opens in a new window
M. Al-Amin, J.D. Murphy
IEEE Journal of Photovoltaics, 7 1519 (2017)
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* 49. Low-temperature saw damage gettering to improve minority carrier lifetime in multicrystalline siliconLink opens in a new window
M. Al-Amin, N.E. Grant, J.D. Murphy
Physica Status Solidi Rapid Research Letters, 11 1700268 (2017)
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* 48. Recombination via transition metals in solar silicon; the significance of hydrogen-metal reactions and lattice sites of metal atomsLink opens in a new window
J. Mullins, S. Leonard, V.P. Markevich, I.D. Hawkins, P. Santos, J. Coutinho, A. Marinopoulos, J.D. Murphy, M.P. Halsall, A.R. Peaker
Physica Status Solidi A, 214 1700304 (2017)
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* 47. Light-induced activation and deactivation of bulk defects in boron-doped float-zone siliconLink opens in a new window
T. Niewelt, M. Selinger, N.E. Grant, W.M. Kwapil, J.D. Murphy, M.C. Schubert
Journal of Applied Physics, 121 185702 (2017)
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* 46. Passivation effects on low-temperature gettering in multicrystalline siliconLink opens in a new window
M. Al-Amin, J.D. Murphy
IEEE Journal of Photovoltaics, 7 68 (2017)
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* 45. Gettering of interstitial iron in silicon by plasma-enhanced chemical vapour deposited silicon nitride filmsLink opens in a new window
A.Y. Liu, C. Sun, V.P. Markevich, A.R. Peaker, J.D. Murphy, D. Macdonald
Journal of Applied Physics, 120 193103 (2016)
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44. Hydrogenation effect on low temperature internal gettering in multicrystalline siliconLink opens in a new window
M. Al-Amin, J.D. Murphy
Proceedings of the 43rd IEEE Photovoltaics Specialist Conference (PVSC 2016), pages 0585 to 0590 (2016)

43. Permanent annihilation of thermally activated defects which limit the lifetime of float-zone siliconLink opens in a new window
N.E. Grant, V.P. Markevich, J. Mullins, A.R. Peaker, F. Rougieux, D. Macdonald, J.D. Murphy
Physica Status Solidi A, 213 2844 (2016)

* 42. Increasing minority carrier lifetime in as-grown multicrystalline silicon by low temperature internal getteringLink opens in a new window
M. Al-Amin, J.D. Murphy
Journal of Applied Physics, 119 235704 (2016)
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M. Al-Amin, J.D. Murphy
Invited paper in Solid State Phenomena, 242 109 (2016)
Open access via the above link.

40. Can vacancies and their complexes with nonmetals prevent the lifetime reaching its intrinsic limit in silicon?Link opens in a new window
F.E. Rougieux, N.E. Grant, D. Macdonald, J.D. Murphy
Proceedings of the IEEE 42nd Photovoltaic Specialists Conference (PVSC 2015) (2015)

* 39. The effect of oxide precipitates on minority carrier lifetime in n-type siliconLink opens in a new window
J.D. Murphy, M. Al-Amin, K. Bothe, M. Olmo, V.V. Voronkov, R.J. Falster
Journal of Applied Physics, 118 215706 (2015)
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38. Evidence for an iron-hydrogen complex in p-type siliconLink opens in a new window
S. Leonard, V.P. Markevich, A.R. Peaker, B. Hamilton, J.D. Murphy
Applied Physics Letters, 107 032103 (2015)

* 37. Influence of annealing and bulk hydrogenation on lifetime limiting defects in nitrogen-doped floating zone siliconLink opens in a new window
F.E. Rougieux, N.E. Grant, C. Barugkin, D. Macdonald, J.D. Murphy
IEEE Journal of Photovoltaics, 5 495 (2015)
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* 36. Competitive gettering of iron in silicon photovoltaics: oxide precipitates versus phosphorus diffusionLink opens in a new window
J.D. Murphy, R.E. McGuire, K. Bothe, V.V. Voronkov, R.J. Falster
Journal of Applied Physics, 116 053514 (2014)
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35. Inter-laboratory study of eddy-current measurement of excess-carrier recombination lifetimeLink opens in a new window
A.L. Blum, J.S. Swirhun, R.A. Sinton, F. Yan, S. Herasimenka, T. Roth, K. Lauer, J. Haunschild, B. Lim, K. Bothe, Z. Hameiri, B. Seipel, R. Xiong, M. Dhamrin, J.D. Murphy
IEEE Journal of Photovoltaics, 4 525 (2014)

* 34. Minority carrier lifetime in silicon photovoltaics: the effect of oxygen precipitationLink opens in a new window
J.D. Murphy, R.E. McGuire, K. Bothe, V.V. Voronkov, R.J. Falster
Solar Energy Materials and Solar Cells, 120 402 (2014)
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33. Inter-laboratory study of eddy-current measurement of excess-carrier recombination lifetimeLink opens in a new window
A.L. Blum, J.S. Swirhun, R.A. Sinton, F. Yan, S. Herasimenka, T. Roth, K. Lauer, J. Haunschild, B. Lim, K. Bothe, Z. Hameiri, B. Seipel, R. Xiong, M. Dhamrin, J.D. Murphy
Proceedings of the IEEE 39th Photovoltaic Specialists Conference (PVSC 2013), pages 1396 to 1401 (2013)

* 32. On the mechanism of recombination at oxide precipitates in siliconLink opens in a new window
J.D. Murphy, K. Bothe, V.V. Voronkov, R.J. Falster
Applied Physics Letters, 102 042105 (2013)
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31. Fabrication of 'finger-geometry' silicon solar cells by electrochemical anodisationLink opens in a new window
G.F. Martins, A.J.R. Thompson, B. Goller, D. Kovalev, J.D. Murphy
Journal of Materials Science, 48 2977 (2013)

* 30. The relaxation behaviour of supersaturated iron in single-crystal silicon at 500 to 750ºCLink opens in a new window
J.D. Murphy, R.J. Falster
Journal of Applied Physics, 112 113506 (2012)
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29. The impact of oxide precipitates on minority carrier lifetime in Czochralski siliconLink opens in a new window
J.D. Murphy, K. Bothe, R. Krain, V.V. Voronkov, R.J. Falster
Invited paper in ECS Transactions, 50 (5) 137 (2012)

* 28. Room temperature sub-bandgap photoluminescence from silicon containing oxide precipitatesLink opens in a new window
K. Bothe, R.J. Falster, J.D. Murphy
Applied Physics Letters, 101 032107 (2012)
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27. Chemical etching to dissolve dislocation cores in multicrystalline siliconLink opens in a new window
N.J. Gregori, J.D. Murphy, J.M. Sykes, P.R. Wilshaw
Physica B, 407 2970 (2012)

* 26. Parameterisation of injection-dependent lifetime measurements in semiconductors in terms of Shockley-Read-Hall statistics: an application to oxide precipitates in siliconLink opens in a new window
J.D. Murphy, K. Bothe, R. Krain, V.V. Voronkov, R.J. Falster
Journal of Applied Physics, 111 113709 (2012)
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* 25. Spin-dependent recombination in Czochralski silicon containing oxide precipitatesLink opens in a new window
V. Lang, J.D. Murphy, R.J. Falster, J.J.L. Morton
Journal of Applied Physics, 111 013710 (2012)
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* 24. The effect of oxide precipitates on minority carrier lifetime in p-type siliconLink opens in a new window
J.D. Murphy, K. Bothe, M. Olmo, V.V. Voronkov, R.J. Falster
Journal of Applied Physics, 110 053713 (2011)
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23. Contamination of silicon by iron at temperatures below 800°CLink opens in a new window
J.D. Murphy, R.J. Falster
Physica Status Solidi Rapid Research Letters, 5 370 (2011)

22. Recombination at oxide precipitates in siliconLink opens in a new window
J.D. Murphy, K. Bothe, R. Krain, M. Olmo, V.V. Voronkov, R.J. Falster
Solid State Phenomena, 178-179 205 (2011)

* 21. The effect of impurity-induced lattice strain and Fermi level position on low temperature oxygen diffusion in siliconLink opens in a new window
Z. Zeng, J.D. Murphy, R.J. Falster, X. Ma, D. Yang, P.R. Wilshaw
Journal of Applied Physics, 109 063532 (2011)
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20. Minority carrier lifetime in Czochralski silicon containing oxide precipitatesLink opens in a new window
J.D. Murphy, K. Bothe, M. Olmo, V.V. Voronkov, R.J. Falster
ECS Transactions, 33 (11) 121 (2010)

19. Determination of grain orientations in multi-crystalline silicon by reflectometryLink opens in a new window
Y. Wang, J.D. Murphy, P.R. Wilshaw
Journal of the Electrochemical Society, 157 H884 (2010)

18. An investigation into fracture of multi-crystalline siliconLink opens in a new window
B.R. Mansfield, D.E.J. Armstrong, P.R. Wilshaw, J.D. Murphy
Solid State Phenomena, 156-158 55 (2010)
Open access via the above link.

17. Characterisation of plastic zones around crack-tips in pure single-crystal tungsten using electron backscatter diffractionLink opens in a new window
J.D. Murphy, A.J. Wilkinson, S.G. Roberts
IOP Conference Series: Materials Science and Engineering, 3 012015 (2009)

16. Measurements of dislocation locking by near-surface ion-implanted nitrogen in Czochralski siliconLink opens in a new window
C.R. Alpass, A. Jain, J.D. Murphy, P.R. Wilshaw
Journal of the Electrochemical Society, 156 H669 (2009)

15. Nitrogen in silicon: diffusion at 500 to 700°C and interaction with dislocationsLink opens in a new window
C.R. Alpass, J.D. Murphy, R.J. Falster, P.R. Wilshaw
Materials Science and Engineering B, 159-160 95 (2009)

14. The mechanical properties of tungsten grown by chemical vapour depositionLink opens in a new window
J.D. Murphy, A. Giannattasio, Z. Yao, C.J.D. Hetherington, P.D. Nellist, S.G. Roberts
Journal of Nuclear Materials, 386-388 583 (2009)

* 13. Nitrogen diffusion and interaction with dislocations in single-crystal siliconLink opens in a new window
C.R. Alpass, J.D. Murphy, R.J. Falster, P.R. Wilshaw
Journal of Applied Physics, 105 013519 (2009)
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12. Nanoindentation and micromechanical testing of iron-chromium alloys implanted with iron ionsLink opens in a new window
F.M. Halliday, D.E.J. Armstrong, J.D. Murphy, S.G. Roberts
Advanced Materials Research, 59 304 (2009)

11. Measurements of dislocation locking by near-surface ion-implanted nitrogen in Czochralski siliconLink opens in a new window
C.R. Alpass, J.D. Murphy, A. Jain, P.R. Wilshaw
ECS Transactions, 16 (6) 249 (2008)

10. Out-diffusion of nitrogen from float-zone silicon measured by dislocation lockingLink opens in a new window
C. R. Alpass, J.D. Murphy, A. Giannattasio, S. Senkader, R.J. Falster, P.R. Wilshaw
Physica Status Solidi (a), 204 2256 (2007)

* 9. Enhanced oxygen diffusion in highly-doped p-type Czochralski siliconLink opens in a new window
J.D. Murphy, P.R. Wilshaw, B.C. Pygall, S. Senkader, R.J. Falster
Journal of Applied Physics, 100 103531 (2006)
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8. Nitrogen-doped silicon: mechanical, transport and electrical propertiesLink opens in a new window
J.D. Murphy, C.R. Alpass, A. Giannattasio, S. Senkader, D. Emiroglu, J.H. Evans-Freeman, R.J. Falster, P.R. Wilshaw
ECS Transactions, 3 (4) 239 (2006)

7. Nitrogen in silicon: transport and mechanical propertiesLink opens in a new window
J.D. Murphy, C.R. Alpass, A. Giannattasio, S. Senkader, R.J. Falster, P.R. Wilshaw
Nuclear Instruments and Methods in Physics Research B, 253 113 (2006)

6. Oxygen transport in Czochralski silicon investigated by dislocation locking experimentsLink opens in a new window
J.D. Murphy, S. Senkader, R.J. Falster, P.R. Wilshaw
Materials Science and Engineering B, 134 176 (2006)

5. The influence of nitrogen on dislocation locking in float-zone siliconLink opens in a new window
J.D. Murphy, A. Giannattasio, C.R. Alpass, S. Senkader, R.J. Falster, P.R. Wilshaw
Solid State Phenomena, 108-109 139 (2005)

4. High resolution deep-level transient spectroscopy applied to extended defects in siliconLink opens in a new window
J.H. Evans-Freeman, D. Emiroglu, K.D. Vernon-Parry, J.D. Murphy, P.R. Wilshaw
Journal of Physics: Condensed Matter, 17 S2219 (2005)

3. Oxygen and nitrogen transport in silicon investigated by dislocation locking experimentsLink opens in a new window
A. Giannattasio, J.D. Murphy, S. Senkader, R.J. Falster, P.R. Wilshaw
Journal of the Electrochemical Society, 152 G460 (2005)

2. Nitrogen transport in float-zone and Czochralski silicon investigated by dislocation locking experimentsLink opens in a new window
J.D. Murphy, A. Giannattasio, S. Senkader, R.J. Falster, P.R. Wilshaw
Physica Status Solidi (a), 202 926 (2005)

1. Impurity locking of dislocations in silicon
A. Giannattasio, J.D. Murphy, S. Senkader, R.J. Falster, P.R. Wilshaw
Proceedings of the 206th Meeting of The Electrochemical Society, High Purity Silicon VIII, 2004-05 39 (2004)