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Staff Profile



Associate Professor


School of Engineering
University of Warwick

Research Interests

Analysis, development, modeling of Power Electronics: Development of novel switches/devices for addressing issues of energy efficiency, reliability, sustainability and cost effectiveness of power switches for medium and high voltage applications. Design of Power Microelectronics Circuits. High Frequency power electronics/devices: Wideband gap materials.


Dr Marina Antoniou (MA) is an Associate Professor in the School of Engineering at the University of Warwick. She has been the holder of several highly competitive research fellowships and grants including the Royal Society Research Fellowship 2017 (SiC Power Devices for Smart Grid Systems, £860k) , a Junior Research Fellowship (Selwyn College) and an Early Career EPSRC Centre for Power Electronics award, all of which involved the design and development of power SiC or Si high power devices. Her work has been published as first authored papers in leading IEEE journals and has received awards at major international conferences. She has written five patents and two book chapters. She is a technical committee member for the IEDM, the leading international forum for reporting technological breakthroughs in the areas of semiconductor and electron device technology, design, manufacturing, physics, and modeling and the ISPSD, the leading international conference in the area of power semiconductor devices. She is currently also shadowing the Chief Scientific Advisor for the UK government (Department of Business Energy Innovation Strategy (BEIS)) as a Policy Associate sponsored by the Royal Society.

Research Projects

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  • Antoniou, M., Lophitis, N., Udrea, F., Rahimo, M., Vemulapati, U., Corvasce, C., Badstuebner, U., 2019. Deep p-ring trench termination : an innovative and cost-effective way to reduce silicon area. IEEE Electron Device Letters, 40 (2), pp. 177-180, View
  • Arvanitopoulos, A, Lophitis, N, Gyftakis, K N, Perkins, S, Antoniou, M., 2017. Validated physical models and parameters of bulk 3C–SiC aiming for credible technology computer aided design (TCAD) simulation. Semiconductor Science and Technology, 32 (10), View
  • Antoniou, M., Lophitis, Neophytos, Udrea, Florin, Bauer, Friedhelm, Vemulapati, Umamaheswara Reddy, Badstuebner, Uwe, 2017. On the investigation of the "anode side" SuperJunction IGBT design concept. IEEE Electron Device Letters, 38 (8), pp. 1063-1066, View
  • Lophitis, Neophytos, Antoniou, M., Udrea, Florin, Vemulapati, Umamaheswara, Arnold, Martin, Nistor, Iulian, Vobecky, Jan, Rahimo, Munaf, 2015. Improving current controllability in bi-mode gate commutated thyristors. IEEE Transactions on Electron Devices, 62 (7), pp. 2263-2269, View
  • Antoniou, M., Lophitis, N., Bauer, F., Nistor, I., Bellini, M., Rahimo, M., Amaratunga, G., Udrea, F., 2015. Novel approach toward plasma enhancement in trench-insulated gate bipolar transistors. IEEE Electron Device Letters, 36 (8), pp. 823-825, View

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