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Oliver Vavasour

Oliver Vavasour M.Eng.Photo of Oliver Vavasour

PhD Researcher – Dielectrics for Narrow Bandgap III-V Devices

School of Engineering

University of Warwick




Room: D032

Email: O dot Vavasour at warwick dot ac dot uk



Oliver Vavasour was born in Rugby, England in 1991. He received his MEng degree in electronic engineering from the University of Warwick in 2014. During his undergraduate degree, he studied silicon carbide schottky diodes for his individual project, fabricating and characterising devices. For his group project, he was part of the Warwick University Satellite Team (WUSAT), which aimed to build a module to be launched on the 2015 REXUS (Rocket Experiments for University Students) launch run by the German and Swedish space boards before moving on to an orbital launch.


His work in the Quantum Devices group began in summer 2013 as part of the university’s Undergraduate Research Scholarship Scheme (URSS). During his URSS project, Oliver worked on process capabilities within the group, working with a wet etch process for InSb and developing a dry etch process for polyimide films. For his PhD project, Oliver is studying dielectric layers on InSb and AlInSb and is aiming to reduce defect density and improve device performance.


Research Interests

  • Process technology deficiency in III-V materials
  • New materials to extend Moore’s Law
  • Electronic materials fit for purpose



P. M. Gammon, A. Pérez-Tomás, V. A. Shah, O. Vavasour, E. Donchev, J. S. Pang, M. Myronov, C. A. Fisher, M. R. Jennings, D. R. Leadley and P. A. Mawby, "Modelling the inhomogeneous SiC Schottky interface",
J. Appl. Phys. 114, 223704, 2013.