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Professor Tim Ashley

Photo of Tim Ashley

Professor Tim Ashley M.A. (Cantab), Ph.D. (Surrey), FInstP

Professorial Fellow and Director of Graduate Studies

School of Engineering

University of Warwick




Room: A422

Tel: +44(0)247 615 1817

Email: T dot Ashley at warwick dot ac dot uk



Professor Tim Ashley joined the University of Warwick in 2011, having previously been at QinetiQ and its UK Government antecedents (RSRE, DRA, DERA) in Malvern, UK, where he was a QinetiQ Senior Fellow. He is an international expert on devices utilising the unique properties of narrow bandgap semiconductors, including III-V (indium antimonide) and II-VI (mercury cadmium telluride) materials. He has specific interests in infrared sources and detectors, ultra high frequency low power consumption electronics and spin based devices.

Professor Ashley’s first degree was in Natural Sciences from University of Cambridge and his PhD was on the non-equilibrium operation of narrow-gap semiconductor devices, from the University of Surrey Department of Electronic Engineering. He has published over 80 peer reviewed papers and has a similar number of conference presentations. He also has 20 patent families granted or pending in, at least, UK and US.


Research Interests

  • Narrow bandgap semiconductors
  • Infrared detectors and arrays
  • Thermal imaging
  • IR Negative luminescent devices
  • LEDs for gas sensors
  • Mid-IR diode lasers
  • Ultra-fast low power dissipation transistors
  • Spin based devices


Current Research Projects

  • EPSRC Engineering Fellowships for Growth: Narrow Band-gap Semiconductors for Integrated Sensing and Communications with Professor Tim Ashley as PI. Project Start Date: 31/08/2014. Project End Date: 30/08/2017.


Selected Publications

  • S. Datta, T. Ashley, J. Brask, L. Buckle, M. Doczy, M. Emeny, D. Hayes, K. Hilton, R. Jefferies, T. Martin, T.J. Phillips, D. Wallis, P. Wilding and R. Chau, ‘85nm gate length enhancement and depletion mode InSb quantum well transistors for ultra high speed and very low power digital logic applications’, IEEE Int. Electron Devices Meeting (IEDM) Tech. Dig., 763 (2005)
  • T. Ashley, L. Buckle, S. Datta, M.T. Emeny, D.G. Hayes, K.P. Hilton, R. Jefferies, T. Martin, T.J. Phillips, D.J. Wallis, P.J. Wilding and R. Chau, ‘Heterogeneous InSb quantum well transistors on silicon for ultra-high speed, low power logic applications’, Elect. Lett., 43, 777 (2007)
  • M. Radosavljevic, T. Ashley, A. Andreev, S.D. Coomber, G. Dewey, M.T. Emeny, M. Fearn, D.G. Hayes, K.P. Hilton, M.K. Hudait, R. Jefferies, T. Martin, R. Pillarisetty, W. Rachmady, T. Rakshit, S.J. Smith, M.J. Uren, D.J. Wallis, P.J. Wilding and R. Chau, ‘High-performance 40nm gate length InSb p-channel compressively strained quantum well field effect transistors for low power (Vcc=0.5V) logic applications’, IEEE Int. Electron Devices Meeting (IEDM) Tech. Dig., 727 (2008)
  • G.R. Nash and T. Ashley, ‘Reduction of Shockley-Read-Hall generation in AlInSb light-emitting-diodes using spatial patterning of the depletion region’, Appl. Phys. Lett., 94, art. no. 213510 (2009)
  • T. Ashley, M. T. Emeny, D. G. Hayes, K. P. Hilton, R. Jefferies, J. O. Maclean, S. J. Smith, A. W-H. Tang, D. J. Wallis and P. J. Webber, ‘High-Performance InSb Based Quantum Well Field Effect Transistors for Low-Power Dissipation Applications’, invited paper presented at IEEE Int. Electron Devices Meeting (IEDM) Tech. Dig., 849 (2009)
  • T. Ashley, M.T. Emeny, D.G. Hayes, K.P. Hilton, R. Jefferies, J.O. Maclean, S.J. Smith, W.H.A. Tang, P.J. Webber and G.M. Williams, 'High performance InSb QWFETs for Low Power Dissipation Millimetre Wave Applications', 2010 European Microwave Integrated Circuits Conf. (EUMIC), 158 (2010)
  • A.M. Gilbertson, A. Kormanyos, P.D. Buckle, M. Fearn, T. Ashley, C.J. Lambert, S.A. Solin and L.F. Cohen, ‘Room temperature ballistic transport in InSb quantum well nanodevices’, Appl. Phys. Lett., 99, art. no. 242101 (2011)
  • S. Stachel, G.V. Budkin, U. Hagner, V.V. Bel'kov, M.M. Glazov, S.A. Tarasenko, S.K. Clowes, T. Ashley, A.M. Gilbertson, and S.D. Ganichev, S. D., ‘Cyclotron-resonance-assisted photon drag effect in InSb/InAlSb quantum wells excited by terahertz radiation’, Phys. Rev. B, 89, 115435 (2014)