Oxide precipitates and associated extended defects (dislocations and stacking faults) play a crucial role in Czochralski silicon for integrated circuits, as they are energetically favourable sites for unwanted transition metal impurities. They can also form during cooling of multicrystalline silicon ingots used for solar cells. In this project, the recombination of electrons and holes at these precipitates and associated defects (dislocations and impurities) is studied as a function of precipitate morphology (unstrained or strained), size and density. Quasi-steady state photoconductance (QSS-PC) is used to study minority carrier lifetime as a function of injection level in a large matrix of carefully produced specimens and parameters pertaining to recombination at these defects are determined. We are also studying room temperature photoluminescence of these defects.
- On the mechanism of recombination at oxide precipitates in silicon, J.D. Murphy, K. Bothe, V.V. Voronkov, R.J. Falster, Applied Physics Letters, 102 042105 (2013)
- Room temperature sub-bandgap photoluminescence from silicon containing oxide precipitates, K. Bothe, R.J. Falster, J.D. Murphy, Applied Physics Letters, 101 032107 (2012)
- Parameterisation of injection-dependent lifetime measurements in semiconductors in terms of Shockley-Read-Hall statistics: an application to oxide precipitates in silicon, J.D. Murphy, K. Bothe, R. Krain, V.V. Voronkov, R.J. Falster, Selected as a "Research Highlight" in Journal of Applied Physics, 111 113709 (2012)
- Spin-dependent recombination in Czochralski silicon containing oxide precipitates, V. Lang, J.D. Murphy, R.J. Falster, J.J.L. Morton, Journal of Applied Physics, 111 013710 (2012)
- The effect of oxide precipitates on minority carrier lifetime in p-type silicon, J.D. Murphy, K. Bothe, M. Olmo, V.V. Voronkov, R.J. Falster, Journal of Applied Physics, 110 053713 (2011)