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Recombination at extended defects

Oxide precipitates and associated extended defects (dislocations and stacking faults) play a crucial role in Czochralski silicon for integrated circuits, as they are energetically favourable sites for unwanted transition metal impurities. They can also form during cooling of multicrystalline silicon ingots used for solar cells. In this project, the recombination of electrons and holes at these precipitates and associated defects (dislocations and impurities) is studied as a function of precipitate morphology (unstrained or strained), size and density. Quasi-steady state photoconductance (QSS-PC) is used to study minority carrier lifetime as a function of injection level in a large matrix of carefully produced specimens and parameters pertaining to recombination at these defects are determined. We are also studying room temperature photoluminescence of these defects.

Key publications