School of Engineering Email: M dot R dot Jennings at warwick dot ac dot uk
University of Warwick Tel: +44 (0) 2476 522266
Coventry CV4 7AL
Mike Jennings was born in Neath, Wales in 1980. He received his BEng degree in Electronics with Communications from the University of Wales, Swansea, UK in 2003. The BEng incorporated a second year (exchange program) of study in the USA, where he studied at Union College, Schenectady, NY. His interest in semiconductor device modelling, processing and characterisation led him to undertake a PhD, in the field of silicon carbide (SiC) power electronics at the University of Warwick, UK. During his PhD he has won travel scholarships from the IEE (Hudswell Bequest Fellowship) and Welsh Livery Guild for electrical engineering research purposes. The scholarships obtained allowed him to visit Rensselaer Polytechnic Institute, NY, USA in 2005. He successfully defended his PhD, entitled "Novel Contact Formation for 4H-SiC Power Devices" in 2008.
In 2009 Mike was awarded a Science City Research Alliance (SCRA) Fellowship, sponsored by the European Regional Development Fund (ERDF) and Advantage West Midlands (AWM). The focus of his research within this remit was the “Development of SiC Devices”. His current research topics include high voltage bipolar devices (PiN diodes and Thyristors) in SiC, novel gate oxidation processes for Field Effect Transistors (FET) and 3C-SiC (cubic) growth above direct wafer bonded Si/SiC structures. Mike continues to work on the above topics as an active member of the Power Electronics Applications and Technology in Energy Research (PEATER) group within the School of Engineering. He is a lecturer on numerous electrical engineering courses from first year to fourth year.
- Silicon Carbide (4H- and 3C-SiC) Power Semiconductor Device Fabrication and Characterisation*
- Reliability of Silicon Carbide Metal Oxide Semiconductor Field Effect Transistors (MOSFETs)
- Gallium Oxide Power Electronic Devices
*Full research profile including publication list: Google Scholar Account
- 3C-SiC Hetero-epitaxiALLy grown on silicon compliancE substrates and 3C-SiC substrates for sustaiNable wide-band-Gap powEr devices (CHALLENGE), Funded by: Horizon2020 in collaboration with CNR-IMM, ITALY, University of Erlangen, GERMANY, L.P.E Spa, ITALY, NovaSiC SA, FRANCE, Anvil Semiconductors Ltd, UK, Ascatron AB, SWEDEN, Moverim Consulting, BELGIUM, Ion Beam Services, FRANCE, Linkoping University, SWEDEN, ST Microelectronics, ITALY, Cusic Inc, JAPAN. This project is concerned with establishing a disruptive 3C-SiC wafer / power semiconductor device technology at around 1000V. Project Start Date: 01/01/2017. Project End Date: 31/12/2020.
- Silicon Carbide for Energy Resilience (SiCER), Funded by: Technology Strategy Board (TSB) in collaboration with Dynex Semiconductor Ltd., Eltek Semiconductors Ltd. and Alstom Grid UK, Project entails the delivery of a 10 kV SiC power MOSFET for smart grid application in voltage source converters (VSCs). Project Start Date: 01/04/2014 Project End Date: 01/04/2017. - COMPLETE
Gallium Oxide Semiconductor Devices for Power Electronics
This project will work alongside a consortium of leading industrial and academic partners, which brings together a number of world leaders in power semiconductors and energy conversion to develop solutions for automotive, aerospace, industrial and grid-level power electronics. The purpose is to improve the UKs energy infrastructure as we move into a low carbon economy. A paradigm shift in technology will be required in order to cope effectively with an ever-increasing amount of renewable energy being brought online. It is envisaged that other forms of renewable energy e.g. tidal, solar could also play a role alongside traditional coal fired power stations and nuclear energy generation. Revolutionary changes to power conversion is indispensable if these carbon emissions targets are to be met. The objective is to enable a step change in power conversion, transmission and distribution through power electronics based on new materials. At the heart of such systems are power semiconductor devices.
The advantages of wide bandgap materials such as silicon carbide (SiC) and gallium nitride (GaN) for power electronic applications are well documented. Gallium Oxide (Ga2O3) is an emerging oxide semiconductor that has recently been identified as a promising candidate for power electronics and photovoltaics. There are very few reports on this exciting new material. This project is aimed at understanding the fundamental performance limit of Ga2O3 power devices through finite element modelling (electrical and thermal) and device fabrication aimed at both power electronics and photovoltaics. A self-motivated individual who will be based at the School of Engineering, University of Warwick will conduct research into the latest gallium oxide power electronic devices. The research work will be undertaken in a state of the art micro-fabrication power semiconductor device cleanroom – see here for more details.