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Conferences

This list of international conference presentations with Professor Shiro Tsukamoto et al. gives an idea of the topics covered in our long-term collaboration.

T.Konishi, M.Hirayama, N.Nishiwaki, T.Toujyou, T.Ishikawa, T.Teraoka, Y.Ueta, Y.Kihara, H.Moritoki, T.Tono, M.Musashi,
T.Tada, S.Fujikawa, M.Takahashi, G.Bell, A.Ishii, M.Shimoda, S.Tsukamoto, “Organopalladium catalyst on S-terminated GaAs(001)
and GaN(0001) surfaces”, VII International Workshop on Semiconductor Surface Passivation (SSP 2011), invited,
Krakow, Poland, Sep.11-15, (2011).

M.Hirayama, G.Bell, and S.Tsukamoto, “Initial growth of MnAs on GaAs (110) and (001)”, Villa Conference on Interactions Among
Nanostructures 2011 (VCIAN 2011) , p.120, Las Vegas, Nevada, U.S.A., April 21-25, (2011).

10) M.Hirayama, J.D.Aldous, G.R.Bell, and S.Tsukamoto, “MnAs Nanocrystals on GaAs(110) Formed by Molecular Beam Epitaxy”,
38th Conference on the Physics and Chemistry of Surfaces and Interfaces(PCSI-38), We1600, San Diego, CA, USA, Jan.16-20,
(2011).

T.Konishi, N.Nishiwaki, T.Toujyou, T.Ishikawa, T.Teraoka, Y.Ueta, Y.Kihara, H.Moritoki, T.Tono, M.Musashi, T.Tada, S.Fujikawa,
M.Takahashi, G.Bell, M.Shimoda, and S.Tsukamoto, “Surface study of organopalladium molecules on S-terminated GaAs”, The 37th
International Symposium on Compound Semiconductors (iscs2010), WeE4-3, pp.297, Kagawa, Japan, 2010.5-6.

T.Konishi, T.Toujyou, N.Nishiwaki, T.Tono, Y.Kihara, H.Moritoki, T.Tada, S.Fujikawa, M.Takahashi, G.Bell, M.Shimoda, A.Ishii,
and S.Tsukamoto, “Pd acetate molecules on S-terminated GaAs(001) surface”, 6th International Workshop on Semiconductor Surface
Passivation (SSP2009), Zakopane, Poland, 2009.9.

T.Ishikawa, T.Konishi, T.Toujyou, G.Bell, S.Miyashiro, and S.Tsukamoto, “RHEED observation of organopalladium catalyst on
S-terminated GaAs(001)-(2x6) surface”, Second International Workshop on Epitaxial Growth and Fundamental Properties of
Semiconductor Nanostructures (SemiconNano2009), P-8, Tokushima, Japan, 2009.8.

T.Konishi, T.Toujyou, N.Nishiwaki, Y.Kihara, H.Moritoki, T.Tada, S.Fujikawa, M.Takahashi, G.Bell, and S.Tsukamoto, “Surface
investigation of sulphur-terminated GaAs(001) substrate for supported catalysts”, Second International Workshop on Epitaxial Growth
and Fundamental Properties of Semiconductor Nanostructures (SemiconNano2009), invited, O-36, Tokushima, Japan, 2009.8.

T.Konishi, T.Toujyou, N.Nishiwaki, Y.Kihara, S.Moritoki, T.Tada, S.Fujikawa, M.Takahashi, G.Bell, and S.Tsukamoto, “Surface
Investigation of Sulphur-terminated GaAs(001) Deposited with Organopalladium Catalyst”, The 16th International Conference on
Microscopy of Semiconducting Materials (MSM XVI), P3-16, Oxford, UK, 2009.3.

T.Konishi, T.Toujyou, N.Nishiwaki, Y.Kihara, S.Moritoki, T.Tada, S.Fujikawa, M.Takahashi, G.Bell, and S.Tsukamoto,
“Organopalladium catalyst on S-terminated GaAs(001) surface”, 36th Conference on the Physics and Chemistry of Surfaces and
Interfaces (PCSI-36), Th1035, Santa Barbara, USA, 2009.1.

T.Konishi, T.Tojo, T.Ishikawa, G.Bell, and S.Tsukamoto, “in situ STM observation on organopalladium catalyst on S-terminated
GaAs(001)-(2×6) surface”, 15th International Conference on Molecular Beam Epitaxy (MBE2008), TUP5, pp.103, Vancouver,
Canada, 2008.8.

S.Tsukamoto, T.Honma, G.R.Bell, A.Ishii, and Y.Arakawa, “Atomic-scale studies of InAs quantum dot evolution mechanism on
GaAs(001) surface by in-situ STM placed inside MBE growth chamber”, 14th International Conference on Molecular Beam Epitaxy
(MBE2006), ThA1-1, pp.245, Tokyo, Japan, 2006.8.

A.Ishii, S.Oshima, K.Fujiwara, T.Ebisuzaki, G.R.Bell, S.Tsukamoto, and Y.Arakawa, “The theory of quantum dot formation and
decay of InAs/GaAs(001) using the first principles calculation and the kinetic Monte Carlo simulation”, 14th International Conference
on Molecular Beam Epitaxy (MBE2006), WeP-37, pp.220, Tokyo, Japan, 2006.8

Shiro Tsukamoto, Gavin R Bell, Akira Ishii, and Yasuhiko Arakawa, “InAs wetting layer and quantum dots on GaAs(001) surface
studied by in situ STM placed inside MBE growth chamber and kMC simulations based on first-principles calculations”, 28th
International Conference on the Physics of Semiconductors(ICPS 2006), Vienna, Austria, WeA2f.55, pp.176-177, 2006.7

A.Ishii, S.Tsukamoto, G.R.Bell, and Y.Arakawa, “Initial stage of InAs quantum dot formation on GaAs(001) studies using kinetic
Monte Carlo simulation”, 13th International Congress on Thin Films / 8th Atomically Controlled Surfaces, Interfaces and
Nanostructures (ICTF13/ACSIN 8), Stockholm, SWEDEN, 2005.6.

S.Tsukamoto, A.Ishii, G.Bell, and Y.Arakawa, “Atomic-scale studies of InAs quantum dots evolution mechanism on GaAs(001)”,
The International Symposium on Quantum Dots and Photonic Crystals 2005 (ISQDPC2005), D-4, pp.14 , Tokyo, Japan, 2005.3.

S. Tsukamoto, G.R.Bell, A.Ishii, K.Ono, and Y.Arakawa, “Atomic-structure study of InAs wetting layer between InAs Quantum Dots
on GaAs(001) surface by in situ STM placed inside MBE growth chamber”, The 13th International Conference on Molecular Beam
Epitaxy, THP18, p.421-422, Edinburgh, Scotland, UK, 2004.8.

S.Tsukamoto, G.R.Bell, Y.Arakawa, “In-situ Scanning Tunneling Microscopy Observation of InAs Quantum Dots on GaAs(001)
during Molecular Beam Epitaxy Growth”, Sixteenth International Conference on Indium Phosphide and Related Materials (IPRM’04),
TuB-2-1, pp.68-73, Kagoshima, Japan 2004.6.

G.R.Bell, M.Pristovsek, S.Tsukamoto, B.G.Orr, Y.Arakawa, and N.Koguchi, “Scanning tunnelling microscopy of III-V epitaxial
growth: in situ versus in vacuo”, A Royal Microscopical Society Meeting: UK SPM 2004, p19, Nottingham, UK, 2004.3.

Shiro Tsukamoto, Markus Pristovsek, Akihiro Ohtake, Bradford G. Orr, Gavin R. Bell, Takahisa Ohno, and Nobuyuki Koguchi,
“Ga-rich GaAs(001) surfaces observed by STM during high-temperature annealing in MBE”, 12th International Conference on
Molecular Beam Epitaxy, San Francisco, U.S.A., 2002.9.

Shiro Tsukamoto, Markus Pristovsek, Akihiro Ohtake, Bradford G. Orr, Gavin R. Bell, Takahisa Ohno, and Nobuyuki Koguchi,
“Ga-rich GaAs(001) surfaces observed during high-temperature annealing by scanning tunneling microscopy in molecular beam
epitaxy”, 21st Electronic Materials Symposium, Izu-Nagaoka, Japan, 2002.6.

S.Tsukamoto, M.Pristovsek, A.Ohtake, B.Orr, G.Bell, and N.Koguchi, “Ga-rich GaAs(001) surface observed during high-temperature
annealing by scanning tunneling microscopy”, Annual APS March Meeting 2002, Indiana, U.S.A., 2002.3.

M.J.Lowe, T.D.Veal, C.F.McConville, G.R.Bell, S.Tsukamoto, and N.Koguchi, “Extreme band bending at MBE-grown InAs(001)
surfaces induced by in situ sulphur passivation”, The 13th International Conference on Crystal Growth, Kyoto, Japan, 2001.7.

Plus 15 Japanese domestic conferences including several invited talks.