Gavin TO DO

1. experiment plan for STMBE (Mn/GaAs)

2. outline proposal for EPSRC-JST

 

Documents etc. for collaboration and proposal preparation.

Full scheme notes for Royal Soc IJP

Royal Society proposal version 5

 

GO on GaAs recipes and results

 

First sample: AFM images summary

Second batch of samples:

Name	1st etch	2nd etch	description	AFM	Suggested experiments (Anan STMBE)
GOGA1a	HCl 5 min.	none	strong drying features +/- 3 nm	goga1a-1.pdf   goga1b.pdf	Avoid STM (maybe a bit rough). Observe RHEED during anneal. Try growing InAs QDs using a standard recipe, watch RHEED. Can return to Warwick for electron microscopy & AFM.
GOGA2a	HCl 5 min.	poly-S 1 min.	nice partial sheet coverage  at ~50%, single sheets MnSb growth - after deposition RHEED had diffuse circular diffraction pattern (polycrystallinity?)	goga2a-2.pdf  goga2a-1.pdf   goga2b.pdf  goga2b_mnsb.pdf  goga2b_RHEED.pdf	Observe RHEED during anneal then look at room temp. STM. Try growing InAs QDs using a standard recipe then do STM  if RHEED looks promising.
GOGA3a	poly-S 20 min.	none	some pits and thickly covered areas with folded sheets  other areas smoother with folds and >50% coverage	goga3a-2.pdf  goga3a-1.pdf   goga3b.pdf	Observe RHEED during anneal then look at room temp. STM. Try growing 100 nm GaAs using standard recipe and watch RHEED, then return to Warwick for electron microscopy.
GOGA4a	polishing etch (H2SO4:H2O2:H2O)	HCl 5 min.	damaged by 1st etch	goga4a.pdf  goga4b.pdf  goga4b_RHEED.pdf	Check degassing behaviour, check RHEED behaviour in STMBE. If it looks OK, try GaAs growth as above, then to Warwick.

 

Surface preparation: suggested degassing to 300*C in treatment chamber followed by annealing to 500*C watching RHEED.

Substrate information: GaAs(001) (+/- 0.1 degree, 0.35mm), Si doped n-type (probably in 10E17 cm-3 range), single side polished. Wafer Tech WV 18273/Si #10

 

Hirayama JVSTB on Mn nanowires