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Proposals 2010

Gavin TO DO

1. experiment plan for STMBE (Mn/GaAs)

2. outline proposal for EPSRC-JST

 

Documents etc. for collaboration and proposal preparation.

Full scheme notes for Royal Soc IJP

Royal Society proposal version 5

 

GO on GaAs recipes and results

 

First sample: AFM images summary

Second batch of samples:

Name 1st etch 2nd etch description AFM Suggested experiments (Anan STMBE)
GOGA1a HCl 5 min. none  strong drying features +/- 3 nm

 goga1a-1.pdf 
 goga1b.pdf

Avoid STM (maybe a bit rough). Observe RHEED during anneal.
Try growing InAs QDs using a standard recipe, watch RHEED.
Can return to Warwick for electron microscopy & AFM.
GOGA2a HCl 5 min. poly-S 1 min.  nice partial sheet coverage
 at ~50%, single sheets

MnSb growth - after deposition RHEED had diffuse circular diffraction pattern (polycrystallinity?)

 goga2a-2.pdf
 goga2a-1.pdf 
 goga2b.pdf
 goga2b_mnsb.pdf

 goga2b_RHEED.pdf

Observe RHEED during anneal then look at room temp. STM.
Try growing InAs QDs using a standard recipe then do STM 
if RHEED looks promising.
GOGA3a poly-S 20 min. none  some pits and thickly covered areas with folded sheets
 other areas smoother with folds and >50% coverage

 goga3a-2.pdf
 goga3a-1.pdf 
 goga3b.pdf

Observe RHEED during anneal then look at room temp. STM.
Try growing 100 nm GaAs using standard recipe and watch
RHEED, then return to Warwick for electron microscopy.
GOGA4a polishing etch (H2SO4:H2O2:H2O)
HCl 5 min. damaged by 1st etch

 goga4a.pdf
 goga4b.pdf

 goga4b_RHEED.pdf

Check degassing behaviour, check RHEED behaviour in STMBE.
If it looks OK, try GaAs growth as above, then to Warwick.
           

 

Surface preparation: suggested degassing to 300*C in treatment chamber followed by annealing to 500*C watching RHEED.

Substrate information: GaAs(001) (+/- 0.1 degree, 0.35mm), Si doped n-type (probably in 10E17 cm-3 range), single side polished. Wafer Tech WV 18273/Si #10

 

Hirayama JVSTB on Mn nanowires