Skip to main content Skip to navigation


IOP logo

Outstanding works presented at the conference will be invited for submission to a special issue of IOP Semiconductor Science and Technology journal. Its title is "Silicon Epitaxy and Silicon Heterostructures". This special issue will focus on all aspects of science, engineering, technologies and instrumentation of silicon-based epitaxy including the electronic, structural, optical, magnetic and transport properties of materials and devices. Molecular beam epitaxy and chemical vapor deposition are the main epitaxial growth techniques to create state of the art group-IV based semiconductor materials. Key topics include but are not limited to:

  • Group-IV semiconductors and their alloys (i.e. SiGe:C, SiGeSn, SiC, GePb etc) as bulk materials or low-dimensional semiconductor structures (quantum wells, quantum dots and 2D-materials)
  • Research of the structural, electronic, optoelectronic, thermoelectric and magnetic materials properties of the grown silicon based semiconductors

There are no strict length limits for papers or reviews. Only Letter articles are limited in length.
Regular papers tend to be around 10-15 papers and reviews 20-30 pages.
Reviews, by invited speakers only, need to be broad and well set in context by comparison to the international field and state of the art developments.

Submission deadline extended until 10th June 2017

Approximate online publication after August 2017