The European Conference on Silicon Carbide and Related Materials (ECSCRM) is a highly-anticipated event, held every two years, that represents an important international forum that brings together world-leading specialists working in different areas of wide-bandgap semiconductors. Experienced researchers, experts from leading companies and young students interested in this specific scientific domain have a unique opportunity to exchange their views and ideas on the subject in a beautiful environment.

Dr Peter Gammon gave a oral presentation to wide band gap experts from all over the world regarding the latest achievements of the SaSHa project. For SaSHa project, this is also a great opportunity to promote the idea of Si/SiC devices on a different stage. The full presentation can be found here.

Congratulations to Chunwa Chan ! He is currently persuing a PhD degree in University of Warwick, and his work on design and simulation of Si/SiC power devices has been recognized and accepted for publication in the lasted issue of IEEE Transactions on Electron Devices.

This paper presents the design and optimization of a 600 V silicon-on-silicon carbide (Si/SiC) laterally diffused MOSFET with linear doping profile in the drift region for high-temperature applications. The proposed structure has an embedded silicon-on-insulator (SOI) layout through which the traditional graded doping theory for SOI can be applied in the Si/SiC architecture. An SOI counterpart is introduced as a benchmark and modeled alongside the proposed structure. Comparisons between them show that they have the near-identical OFF-state and breakdown characteristics, with a significant tunneling leakage component emerging above 450 V. In the ON state, the Si/SiC device has higher electrical resistance but much lower thermal resistance, leading to less self-heating and higher reliability.

For more detals, click here (open access) to download the paper from the IEEE page !.

Eurospace, the trade association of the European Space manufacturing industry, has now an established tradition of organizing a professional high level workshop to periodically review the key stakes for space technology in Europe and present its technology roadmaps.

In the perspective of the next ESA Council at ministerial level in 2016, Eurospace has the pleasure to inform you that its next technology workshop will be held: on April 26-27, 2016, at the Lausanne Space Center, in coordination with the Swiss Space Center.

For more detailed information, please go to their website below:

http://eurospace.org/

Tariq Abdulla from the University of Warwick is the winner of the SaSHa project logo competition. We now have a very modern project logo thanks to his great job. Dr. Peter Gammon awarded him the prize of £100 and we had a nice get together and a photo taken.

Many thanks Tariq!

From left to right, Fan Li, Tariq Abdulla (winner) and Dr. Peter Gammon