Etching and cleaning processes can be performed using a variety of methods, using wet chemical solutions and plasma tools. The Nanofabrication RTP is equipped with a range of wet and dry processing apparatus.

Wet Etching

• Full range of aqueous wet chemistries for etching and cleaning semiconductor, metal and ceramic materials.
  • Accepts wafers up to 150mm (6") and small samples down to <1cm² . Other sizes available on request.
  • Cleanliness: flexible. General-purpose labware available for medium cleanliness, high cleanliness possible in dedicated labware. Alkali metals prohibited.
  • Standard acids: hydrochloric acid, nitric acid, hydrofluoric acid, sulfuric acid, acetic acid, lactic acid. Other acids avaiable on request.
  • Standard alkalis and oxidisers: ammonium hydroxide, tetramethylammonium hydroxide (TMAH), hydrogen peroxide. Other chemicals avaiable on request.
  • Type 1 (18.2MΩ) DI water available in all wet stations. Hot plate and water baths available for heated processes, e.g. RCA SC-1 and SC-2.
  • Example applications: cleaning wafers to highest cleanliness standards, removal of SiO₂, MEMS membrane release.

• Full range of solvent wet chemistries for cleaning semiconductor, metal and ceramic materials.
  • Accepts wafers up to 150mm (6") and small samples down to <1cm² . Other sizes available on request.
  • Cleanliness: flexible. General-purpose labware available for medium cleanliness, high cleanliness possible in dedicated labware. Alkali metals prohibited.
  • Standard solvents: acetone, isopropanol, methanol. Other solvents available on request.
  • Ultrasonic bath available for cleaning and lift-off processes.
  • Example applications: general-purpose cleaning, lift-off patterning, test sample de-bonding.

Dry Etching

• Corial 200IL ICP-RIE (inductive coupled plasma reactive ion etch) dry plasma etch system, incorporating fluorinated and chlorinated chemistry.
  • Accepts wafers up to 150mm (6").
  • Cleanliness: excellent. Load-lock chamber and process chamber pumped by turbomolecular pump.
  • Standard etch depth: 50nm-50µm.
  • Standard etch gases: O₂, Ar, He, C₂H₄, CHF₃, SF₆, Cl₂, BCl₃.
  • Extended capability: laser end point detection (EPD).
  • General-purpose plasma dry etcher, capable of RIE and ICP processes using fluorine and chlorine chemistry. Max. RIE power 300W, max. ICP power 1000W.
  • Example applications: trench MOS structures, device isolation 'mesa' formation, micro-channel patterning.

• Henniker HPT-100 plasma treatment system, used for low power surface cleaning and treatment.
  • Accepts wafers up to 100mm (4").
  • Cleanliness: good.
  • Standard : .
  • Standard process gases: O₂, Ar, N₂.
  • Extended capability: .
  • .
  • Example applications: .

Other Wet Processing

• Type 1 (18.2MΩ) DI water in all wet stations.
• Two extracted cabinets for solvent cleaning and lift off processes.

Henniker plasmaHPT-100 tabletop Plasma Systemis suitable for routine surface cleaning and activation for a wide range of materials. It features precision mass flow controlled gas inlet, touch-screen interface and robust and reliable 40kHz (100W) plasma generator with fully variable power delivery. Extremely simple to use with front panel touch interface providing interlocked pump down, process and vent cycles.