Etching and Wet Processing

Etching and cleaning processes can be performed using a variety of methods, using wet chemical solutions and plasma tools. The Nanofabrication RTP is equipped with a range of wet and dry processing apparatus.

Wet Etching

• Full range of aqueous wet chemistries for etching and cleaning semiconductor, metal and ceramic materials.
  • Accepts wafers up to 150mm (6") and small samples down to <1cm² . Other sizes available on request.
  • Cleanliness: flexible. General-purpose labware available for medium cleanliness, high cleanliness possible in dedicated labware. Alkali metals prohibited.
  • Standard acids: hydrochloric acid, nitric acid, hydrofluoric acid, sulfuric acid, acetic acid, lactic acid. Other acids avaiable on request.
  • Standard alkalis and oxidisers: ammonium hydroxide, tetramethylammonium hydroxide (TMAH), hydrogen peroxide. Other chemicals avaiable on request.
  • Type 1 (18.2MΩ) DI water available in all wet stations. Hot plate and water baths available for heated processes, e.g. RCA SC-1 and SC-2.
  • Example applications: cleaning wafers to highest cleanliness standards, removal of SiO₂, MEMS membrane release.

• Full range of solvent wet chemistries for cleaning semiconductor, metal and ceramic materials.
  • Accepts wafers up to 150mm (6") and small samples down to <1cm² . Other sizes available on request.
  • Cleanliness: flexible. General-purpose labware available for medium cleanliness, high cleanliness possible in dedicated labware. Alkali metals prohibited.
  • Standard solvents: acetone, isopropanol, methanol. Other solvents available on request.
  • Ultrasonic bath available for cleaning and lift-off processes.
  • Example applications: general-purpose cleaning, lift-off patterning, test sample de-bonding.

Dry Etching

• Corial 200IL ICP-RIE (inductive coupled plasma reactive ion etch) dry plasma etch system, incorporating fluorinated and chlorinated chemistry.
  • Accepts wafers up to 150mm (6").
  • Cleanliness: excellent. Load-lock chamber and process chamber pumped by turbomolecular pump.
  • Standard etch depth: 50nm-50µm.
  • Standard etch gases: O₂, Ar, He, C₂H₄, CHF₃, SF₆, Cl₂, BCl₃.
  • Extended capability: laser end point detection (EPD).
  • General-purpose plasma dry etcher, capable of RIE and ICP processes using fluorine and chlorine chemistry. Max. RIE power 300W, max. ICP power 1000W.
  • Example applications: trench MOS structures, device isolation 'mesa' formation, micro-channel patterning.

• Henniker HPT-100 plasma treatment system, used for low power surface cleaning and treatment.
  • Accepts wafers up to 100mm (4").
  • Cleanliness: good.
  • Standard process gase: O₂.
  • Extended capability: N₂ or Ar plasma treatment.
  • Low-power plasma treatment unit, providing dry surface cleaning and conditioning with minimal damage to sample materials. Gas flow and plasma power controllable, max. power 100W.
  • Example applications: photoresist removal, ashing.