| Topic |
Committee(s) |
| 1. Fundamentals (theoretical and experimental) |
I. Material growth/ II. Charectization and modelling |
| 2. Bulk and epitaxial growth |
I. Material growth |
| 3. New materials grown on SiC (Graphene, III-N compounds and diamond) |
I. Material growth/ V. Related materials |
| 4. Materials Characterisation |
II. Characterization and modelling |
| 5. Surfaces and Interfaces |
III. Processing |
| 6. Device fabrication processes |
III. Processing |
| 7. Devices (power switching, RF power, high temperature and radiation-resistant devices and sensors etc.) |
IV. Devices |
| 8. Device physics (measurements, modelling, simulation and reliability) |
II. Characterization and modelling/ IV. Devices |
| 9. Packaging, modular and circuit technology |
VI. Applications |
| 10. Applications and reliability |
VI. Applications |
| 11. Related materials |
V. Related materials |