Please see below details of exhibitors who are confirmed for ECSCRM 2018:
Ascatron develops next generation Silicon Carbide power semiconductors radically reducing losses in electrical transformers. The high voltage power device products are based on Ascatron™s advanced 3DSiCÂ® material technology with buried doping structures to reduce the surface electric field. This gives very robust devices with lower losses and reliable operation at full power. Target applications are high voltage power electronics >10kW. Ascatron also offers SiC epitaxy services for prototyping with flexible specifications and a range of thicknesses for both n- and p-type doping. A Sweden based scale-up company with background in producing advanced SiC epi material for global customers since 2011.
Centrotherm has been developing and realizing innovative thermal solutions for over 60 years. As a leading and globally operating technology group, we offer production solutions for the semiconductor and microelectronic industries.
Our equipment is designed for all needs from R&D to mass production and applicable for various semiconductor technologies and applications, such as logic and memory devices (e.g. Flash, DRAM) power semiconductors (e.g. Si, SiC), LED, SMT, MEMS or sensor technology: The product portfolio comprises horizontal and vertical batch furnaces (atmospheric or vacuum processes), vertical high temperature furnaces (annealing < 2000Â°C, oxidation < 1500Â°C), single wafer systems < 300mm wafer diameter (RTP, low-temperature microwave oxidation).
Ceramicforum has been involved in the SiC market in Japan since the early 2000s starting out as distributor of SiCrystal substrates, later also taking Norstel and Ascatron amongst others on board. While representing wide bandgap semiconductor-related measurement equipment makers, they also started R&D and sales of their very own line of evaluation equipment - easy-to-use tools to check for crystalline stress/defects in semiconductor materials.
The Fraunhofer Institute for Integrated Systems and Device Technology IISB conducts applied research and development in the fields of power electronics, mechatronics, microelectronics and nanoelectronics. IISB is the leading Fraunhofer institute for SiC research and development in Germany and has been cooperating with international partners for more than 20 years. IISB is offering internationally recognized expertise in terms of SiC services and contract research from materials development and characterization, device manufacturing to module assembly and power electronic systems. IISB operates the P-Fab which is dedicated to technology development and prototype device fabrication on Si and SiC wafers.
Freiberg Instruments is one of the fastest growing, young and dynamic analytical instrumentation companies with products and service covering industries like Crystal Growth & Processing, Microelectronics, Photovoltaic and Research & Development. Key products include: Single crystal diffractometer (XRD), automated sorting and stacking devices, electrical semiconductor characterization devices - ÂµPCD/MDP (QSS)
GT Advanced Technologies is a diversified technology company with crystalline growth expertise in silicon, silicon carbide and sapphire. Our advanced materials deliver sustained value to the world’s top manufacturers in the global PV, power electronics and photonics markets. Our innovative technologies and industry experience drive the development and commercialization of products that elevate performance, improve quality and lower manufacturing costs.
II-VI Advanced Materials is a leading global supplier of high quality single crystal SiC substrates. These products enable key technologies across a wide variety of fast growing markets, including mobile communications infrastructure, RF and high power electronics. Please visit www.iiviadvmat.com or www.ii-vi.com for more Information.
The specialists in equipment for production of Silicon Carbide wafer production. Takatori wire saws are the market leader for slicing of SiC and other hard materials such as GaN, AlN.
The Takatori single wafer grinding system is designed for hard wafers such as SiC. Takatori taping systems provide vacuum lamination, temporary bonding capability and metal lift off processing for III-V devices. Gigamat Technologies is the leading polishing system supplier for SiC wafers. Gigamat wafer sorters are the perfect choice for sorting SiC wafers for thickness, warp, site flatness.
With tighter design limits and the escalating need to increase yield and reduce semiconductor manufacturing costs, automated defect inspection to detect and classify defects in compound semiconductor processing is more critical than ever. KLA-Tencor's Candela semiconductor inspection tool combines the elemental principles of scatterometry, ellipsometry, reflectometry, and topographical analysis to detect defects and then to classify defects in substrates, epi-layers, and process films. Candela semiconductor inspection technology is being used to detect and classify defects by industry leaders in Power Device, LED and GaAs, industries to monitor production lines, detect mission-critical defects of interest, and create process-specific recipes to detect and classify killer defects while ignoring nuisance defects.
Mitsui Bussan Electronics Ltd, is a sales distributor of Sumitomo Heavy Industries Ltd., the manufacturer of efficient solid laser annealing system for next generation power devices.
The application of this laser annealing system is Ohmic contact for Silicon Carbide Back Side. Metal-Silicon Carbide interface is heated to a high temperature suppressing the temperature rise in Non- irradiation side, and the generation of the ohmic contact is achieved by the original high-speed laser annealing method.
Nanotronics is changing the way materials and electronics are manufactured. We automate industrial microscopes used for inspection of the world's smallest technologies: semiconductors, microchips, hard drives, LEDs, nano-fillers, nanotubes, and more. nSpec® is an integrated part of production processes at many of the world's leading manufacturers. nSpec® is powered by industrial enterprise software that provides scientists + engineers the first set of tools as advanced as the devices they build.
Nissin Ion Equipment aims at promoting a development-based business through the manufacture of various equipment at the core of which are proprietary ion beam and plasma technologies.
IMPHEAT is the only mass production tool for high temperature ion implantation. It features the high throughput operation, the precise angle and dose control, the high temperature doping, and the ability of implant various ion species such as Al, B, N, and P. IMPHEAT is useful to manufacture SiC pn junction at high temperature ion implantation.
NuFlare’s SiC Epitaxial System EPIREVO™ S6 is based on the same concept and key features as NuFlare’s Si technology (HT2000FD). These key features consist of Vertical Gas Flow, High Speed Wafer Rotation, Direct Wafer Temperature Measurement, and Multi Zone Controlled Solid Heater. With the combination of vertical gas flow and high speed rotation, EPIREVO™ S6 forms an ultra-thin and uniform concentration boundary layer. The boundary layer becomes thinner as the rotation speed increases. The growth rate increases with the rotation speed as the source gas diffusion rate is accelerated by the thinner boundary layer
Demand for SiC substrates is growing as the demand for SiC-based power and RF devices increases. Yet the adoption of SiC is slowed by cost and by the difficulty of processing the material.
Revasum has developed a streamlined grind and CMP process that eliminates conventional lapping and diamond polishing steps and the associated issues. Revasumâ€™s solution reduces the overall cost to manufacture SiC substrates, in addition to improving quality, productivity and yield -- removing two barriers to more rapid growth in demand for SiC.
Rigaku is a pioneer and world leader in designing and manufacturing X-ray based measurement tools to solve semiconductor manufacturing challenges since its inception in 1951. Rigaku specializes in making TXRF to measure surface metal contamination and X-Ray Topography to analyze crystal dislocations. Also, we offer XRF, XRD and XRR metrology tools to measure critical process parameters like thin film: thickness, composition, roughness, density, porosity, and crystal structure.
Products；XRTmicron (X-ray Topography), TXRF3760/3800e, AZX400&3650 (XRF）
Semiconductor Technology Research (STR) provides software and consulting services for development and optimization of industrial growth equipment, improvement of bulk growth (solution growth, PVT, CVI) and epitaxial techniques, engineering of modeling of following applications: modeling of bulk crystal growth, CVD SiC,coating processes. Offered software products include thesemiconductor devices, MOVPE and HVPE of Group-III nitrides, III-V materials and their alloys; simulation of semiconductor devices.
Showa Denko provides high-quality grade silicon carbide epitaxial wafers (HGE) for high power devices in both 4'' and 6''.
As a leading global supplier of semiconductor and flat panel display (FPD) production equipment, Tokyo Electron Limited (TELâ„¢) engages in development, manufacturing, and sales in a wide range of product fields. All of TEL's semiconductor and FPD production equipment product lines maintain high market shares in their respective global segments. TEL provides outstanding products and services to customers through a global network of approximately 74 locations in 16 countries and regions in the U.S., Europe, and Asia.
Toray Research Center, Inc. provides you with analysis services using a variety of techniques. Our superior ability to meet the problem-solving requirements of clients is based on a long track record and extensive experience in analysis and material evaluation. We will show you our analytical techniques and some examples of our application results.
Wolfspeed, A Cree Company, is liberating power and wireless systems from the limitations of silicon by leading the innovation and commercialisation of the next-generation systems based on silicon carbide and gallium nitride.