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Award Winners

The following awards were given at ECSCRM 2018:

Best Paper Award WINNER:
Naoki Watanabe, Hitachi, Ltd

Improvement of Switching Characteristics in 6.5-kV SiC IGBT with Novel Drift Layer Structure

Co-authors: H. Yoshimoto, Y. Mori, A. Shima

Best Poster Award WINNER:
Julietta Weisse, FAU Erlangen-Nuremberg

Design of a 4H-SiC RESURF n-LDMOS transistor for high voltage integrated circuits

Co-authors: H. Mitlehner , L. Frey, T. Erlbacher

Overall Student Contribution Winner:
Tuerxun Ailihumaer, Stony Brook University

Validation of X-ray topographic contour mapping method for measuring nitrogen doping concentrations in N-doped 4H-SiC substrates

Co-authors: Y. Yang, J. Guo, B.Raghothamachar, M. Dudley

Congratulations to all who were nominated, details of nominations can be found the closing ceremony presentation available here.

Papers were nominated for awards by members of the Technical Programme Committees and Session Chairs. All papers were eligible for nomination.

The nominations were reviewed and awards selected by a designated award committee, comprised of members of the local organisation committee and the international steering committee.

Membership of all committees can be found here.