The following awards were given at ECSCRM 2018:
Best Paper Award WINNER:
Naoki Watanabe, Hitachi, Ltd
Improvement of Switching Characteristics in 6.5-kV SiC IGBT with Novel Drift Layer Structure
Co-authors: H. Yoshimoto, Y. Mori, A. Shima
Best Poster Award WINNER:
Julietta Weisse, FAU Erlangen-Nuremberg
Design of a 4H-SiC RESURF n-LDMOS transistor for high voltage integrated circuits
Co-authors: H. Mitlehner , L. Frey, T. Erlbacher
Overall Student Contribution Winner:
Tuerxun Ailihumaer, Stony Brook University
Validation of X-ray topographic contour mapping method for measuring nitrogen doping concentrations in N-doped 4H-SiC substrates
Co-authors: Y. Yang, J. Guo, B.Raghothamachar, M. Dudley
Congratulations to all who were nominated, details of nominations can be found the closing ceremony presentation available here.
Papers were nominated for awards by members of the Technical Programme Committees and Session Chairs. All papers were eligible for nomination.
The nominations were reviewed and awards selected by a designated award committee, comprised of members of the local organisation committee and the international steering committee.
Membership of all committees can be found here.