Wanbing Ge

Background

2012-2019, BA Electronic Science & MA Materials Science, Uni of Electronic Science and Technology of China

Thesis: Dynamic Scaling Behaviour of Ferroelectric Domain Wall studied by Piezoresponse Force Microscopy

2019-, PhD student, University of Warwick

EPSRC funded project: In-situ manipulation of ferroelectric structures at atomic level

Research Interests

My research focuses on ferroelectric materials which are a family of materials that exhibit a finite spontaneous polarization in absence of an enternal field below their Curie temperature. We can locate positions of their componential atoms and calculate their displacements by the help of atomic resolution Scanning Transmission Electron Microscopy(STEM). Spontaneous polarization of different materials can then be estimated and compared with existing values for a detailed study of ferroelectricity origin. Furthermore, we are trying to carry out in-situ polarization analysis under electrical bias and/or heating to see how ferroelectric structures would behave under controllabel electrical/temperature conditions.

Examples

STEM-ADF image of epitaxial BiFeO₃ thin film(bright) grown on vicinal SrTiO₃ substrate(dark), with beam direction parallerl to [100]_pc. A dislocation line can be found in the middle of the interface, resulting the BiFeO₃ cells at left/right side to have opposite inclination.

Conferences

EMAG 2021 (Oral) - "Polarization Mapping in Single Crystal BiFeO₃ by Atomic Resolution STEM".

Teaching

2019-2020: Demonstrator for the 2nd year Physics undergraduate laboratory.

Wanbing GE

葛宛兵

Department of Physics

University of Warwick

CV4 7AL

Email: Wanbing.Ge@warwick.ac.uk

Office: MAS 1.06