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Wanbing Ge


2012-2019, BSc Electronic Science & MSc Materials Science, Uni Electronic Science and Technology of China

Thesis: Dynamic Scaling Behaviour of Ferroelectric Domain Wall

2019-present, PhD student supervised by Prof. Ana SanchezLink opens in a new window, University of Warwick

EPSRC project: In-situ manipulation of ferroelectric structures at atomic level

Research Interests

My research focuses on ferroelectric materials which exhibit a finite spontaneous polarization in absence of an internal field below Curie temperature. With the help of atomic resolution Scanning Transmission Electron Microscopy(STEM), we can record and locate the positions of atoms to analysis their crystal parameter, strain distribution and atomic displacements. Spontaneous polarization of different materials can then be estimated and compared with existing theories for a detailed study of ferroelectricity origin. Novel domain wall structures and their dynamics also attract our interests, especially the properties of charged domain walls. Furthermore, we are trying to carry out in-situ polarization analysis under electrical bias and/or heating to see how ferroelectric structures would behave under controllable electrical/temperature condition.


STEM-ABF images of BiFeO3 single crystal sample with beam direction parallel to [1-10]pc(left) and [110]pc(right) showing 180 degree domain wall in the middle. Arrows indicate the shift of Fe atoms relative to the centre of Bi atoms.

STEM-ADF image of epitaxial BiFeO3 thin film(bright) grown on vicinal SrTiO3 substrate(dark), with beam direction parallerl to [100]pc. A dislocation line can be found in the middle of the interface, resulting the BiFeO3 cells at left/right side to have opposite inclination.


  • EMAG 2021 (Oral) - "Polarization Mapping in Single Crystal BiFeO3 by Atomic Resolution STEM".


  • 2019-2020: Demonstrator for the 2nd year Physics undergraduate laboratory.

Wanbing GE


Department of Physics

University of Warwick



Office: MAS 1.06