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School of Engineering PEATER

Dr Stephen Thomas

S_thomas

Dr Stephen Thomas B.Eng.(Hons.), M.Sc., Ph.D.

Research Fellow

Office DO32, School of Engineering, University of Warwick, CV4 7AL.

Tel: +44(0)247 615 1293

Fax: +44(0)247 615 8922

Email: stephen dot m dot thomas at warwick dot ac dot uk

 

Current Research Interests

  1. Fabrication and electrical characterisation of silicon-carbide MOSFETs

 

Previous Research Positions

Research Fellow, March 2011-June 2011, Department of Physics, University of Warwick.

 

Previous Teaching

First year electronics workshop. Department of Physics, University of Warwick.

Second year electronics workshop. Department of Physics, University of Warwick.

 

Education

Ph.D. in Semiconductor Device Physics. Thesis title: Electrical characterisation of novel Si finFETs and MOSFETs. 2006-2010. University of Warwick.

M.Sc. in Semiconductor Device Physics. Thesis title: Low frequency noise properties of SiGe and tensile strained silicon MOSFETs. 2005-2006. University of Warwick.

B.Eng.(Hons.) in Electronic engineering. 2002-2005. University of Southampton.

 

Other Training

First aid at work (HSE approved), August 2011.

 

Publications

  1. S. M. Thomas, Y.K. Sharma, M. A. Crouch, C. A. Fisher, A. Perez-Tomas, M. R. Jennings, P. A. Mawby "Enhanced field effect mobility on 4H-SiC by oxidation at 1500 degC", Journal of Electron Devices Society (accepted)
  2. C. A. Fisher, M. R. Jennings, Y. K. Sharma, D. P. Hamilton, S. M. Thomas, F. Li, P. M. Gammon, A. Pérez-Tomás, S. E. Burrows and P. A. Mawby, "On the electrical performance of lifetime-enhanced 4H-silicon carbide PiN diodes”, Accepted for presentation at the 12th International Seminar on Power Semiconductors (ISPS), Prague, August 2014.

  3. C. A. Fisher, M. R. Jennings, Y. K. Sharma, D. P. Hamilton, S. M. Thomas, F. Li, P. M. Gammon, A. Pérez-Tomás, S. E. Burrows and P. A. Mawby, "On the application of novel high temperature oxidation processes to enhance the performance of high voltage silicon carbide PiN diodes”, Accepted for presentation at EPE '14-ECCE Europe, Finland, August 2014.

  4. C. A. Fisher, M. R. Jennings, Y. K. Sharma, V. A. Shah, F. Li, P. M. Gammon, S. M. Thomas, S. E. Burrows and P. A. Mawby, "Development of 4H-silicon carbide PiN diodes with enhanced carrier lifetimes", Accepted for presentation at the 2014 De Beers Diamond Conference, University of Warwick, UK, July 2014.

  5. C. A. Fisher, M. R. Jennings, Y. K. Sharma, S. M. Thomas, F. Li, P. M. Gammon, A. Pérez-Tomás, D. P. Hamilton, S. E. Burrows and P. A. Mawby, "On the application of a novel combined implant activation anneal / SiO2 passivation process for 4H-SiC PiN diodes", Accepted for presentation at 56th Electronic Materials Conference (EMC), Santa Barbara, USA, June 2014.

  6. F. Li, Y. K. Sharma, C. A. Fisher, S. M. Thomas, P. Mawby et al, “Activation of nitrogen in 3C-SiC/Si with SiO2 as a capping layer”, Accepted for presentation at 56th Electronic Materials Conference (EMC 2014) June 25-27, 2014
  7. Y. K. Sharma, F. Li, S. M. Thomas, P. Mawby et al, “High-temperature thermal oxidation and N2O passivation of the 3C-SiC/SiO2 interface”, accepted for presentation to 56th Electronic Materials Conference (EMC 2014) June 25-27, 2014
  8. M. R. Jennings, C. A. Fisher, D. Walker, A. Sanchez, A. Pérez-Tomás, D. P. Hamilton, P. M. Gammon, S. E. Burrows, S. M. Thomas, Y. K. Sharma, F. Li and P. A. Mawby, "Physical and electrical characterisation of 3C-SiC and 4H-SiC for power semiconductor device applications”, ”, Physics of Semiconductor Devices Environmental Science and Engineering 2014, pp 929-932
  9. Y.K. Sharma, S. M. Thomas, M. R. Jennings, P. A. Mawby et al., “Advancements in SiC power devices using novel interface passivation processes”, Physics of Semiconductor Devices Environmental Science and Engineering 2014, pp 47-52
  10. S. M. Thomas, Y. Sharma, M. R. Jennings, P. A. Mawby et al., “Impact of oxidation temperature on the interface trap density in 4H-SiC MOS capacitors” Mater. Sci. Forums (2014)
  11. M. R. Jennings, C. A. Fisher, D. Walker, A. Sanchez, A. Pérez-Tomás, D. P. Hamilton, P. M. Gammon, S. E. Burrows, S. M. Thomas, Y. K. Sharma, F. Li and P. A. Mawby, "On the Ti3SiC2 metallic phase formation for robust p-type ohmic contacts", presented at the International Conference on Silicon Carbide and Related Materials (ICSCRM), Miyazaki, Japan, 2013.
  12. S.M. Thomas, M.R. Jennings, C. A. Fisher, P.A. Mawby “High temperature oxidation of 4H-SiC” European Conference on Silicon-Carbide and Related Materials (ECSCRM), St. Petersburg, Russia, 2012
  13. M.R. Jennings, A. Perez-Tomas, A. Severino, P. Ward, A. Bashir, C.A. Fisher, S.M. Thomas, P.M. Gammon, B. Donnellan, H. Rong, D.P. Hamilton, P.A. Mawby “Bow Free 4-inch 3C-SiC via Si/SiC Direct Wafer Bonding” European Conference on Silicon-Carbide and Related Materials (ECSCRM), St. Petersburg, Russia, 2012
  14. P.M. Gammon, A. Perez-Tomas, M.R. Jennings, A.M. Sanchez, C.A. Fisher, S.M. Thomas, P.A. Mawby “Bipolar conduction across a wafer bonded p-n Si/SiC heterojunction” European Conference on Silicon-Carbide and Related Materials (ECSCRM), St. Petersburg, Russia, 2012
  15. S.M. Thomas, M.J. Prest, T.E. Whall, D.R. Leadley, P. Toniutti, F. Conzatti, D. Esseni, L. Donetti, F. Gamiz, R.J.P Lander, G. Vellianitis, P.-E. Hellstrom and M. Ostling "On the role of Coulomb scattering in hafnium-silicate gated silicon metal-oxide-semiconductor-field-effect-transistors" Journal of Applied Physics, vol. 110, No. 12, 2011
  16. L. Donetti, F. Gamiz, S.M. Thomas, T.E. Whall, D.R. Leadley, P.-E. Hellström, G. Malm and M. Ostling “Hole effective mass in silicon inversion layers with different substrate orientations and channel directions” Journal of Applied Physics, vol. 110, No. 6, 2011
  17. L. Donetti, F. Gamiz, S.M. Thomas, T.E. Whall, and D.R. Leadley, “On the effective mass of holes in inversion layers” ULIS 2011: 12th International Conference on Ultimate Integration of Silicon 2011
  18. F. Conzatti, N. Serra, D. Esseni, M. De Michielis, P. Palestri, L. Selmi, S.M. Thomas, T.E. Whall, D.R. Leadley, E.H.C. Parker, L. Witters, M.J. Hÿtch, E. Snoeck, T.J. Wang, W.C. Lee, G. Doornbos, G. Vellianitis, M.J.H. van Dal, and R.J.P. Lander “Investigation of strain engineering in FinFETs comprising experimental analysis and numerical simulations” IEEE Transactions on Electron Devices vol. 58, No. 6, pp. 1583-1593, 2011
  19. S.M. Thomas, M.J. Prest, T.E. Whall, C.S. Beer, D.R. Leadley, E.H.C. Parker, J.R. Watling, R.J.P. Lander, G. Vellianitis “Low temperature effective mobility measurements and modelling of high-k gated Si n-MOS and p-MOS devices” ULIS 2010: 11th International Conference on Ultimate Integration of Silicon, 2010
  20. N. Serra, F. Conzatti, D. Esseni, M.De Michielis, P. Palestri, L. Selmi, S.M. Thomas, T.E. Whall, E.H.C. Parker, D.R. Leadley, L. Witters, A. Hikavyy, M.J. Hÿtch, F. Houdellier, E. Snoeck, T.J. Wang, W.C. Lee, G. Vellianitis, M.J.H.van Dal, B. Duriez, G. Doornbos and R.J.P. Lander “Experimental and physics based modeling assessment of strain induced mobility enhancement in FinFETs” International Electronic Devices Meeting, 63-66, 2009
  21. S.M. Thomas, T.E. Whall, E.H.C. Parker, D.R. Leadley, R.J.P Lander, G. Vellianitis, J.R. Watling “Improved effective mobility extraction in SOI MOSFETs.” Solid State Electronics 53, 1252-6, 2009
  22. S.M. Thomas, T.E. Whall, E.H.C. Parker, D.R. Leadley, R.J.P Lander, G. Vellianitis, J.R. Watling “Accurate effective mobility extraction in SOI MOS transistors” ULIS 2009: 10th International Conference on Ultimate Integration of Silicon, 31-34, 2009
  23. S.M. Thomas, M. Prest, D. Fulgoni, A.R. Bacon, T.J. Grasby, D.R. Leadley, E.H.C. Parker and T.E. Whall “Low frequency noise in Si and Si/SiGe/Si PMOSFETs” Journal of Telecommunications and Information Technology, 2, 64-68, 2007