Select Year: 2003, 2004, 2005, 2006, 2007, 2008, 2009, 2010, 2011, 2012, 2013

2013

P. M. Gammon, A. Perez-Tomas, V.A. Shah, O. Vavasour, E. Donchev, J. S. Pang, M. Myronov, C. A. Fisher, M. R. Jennings, D. R. Leadley, P. A. Mawby "Modelling the inhomogeneous SiC Schottky interface" Journal of Applied Physics, vol. 114, Issue. 22, Dec 2013

H. Huang, P. A Mawby, "A Lifetime Estimation Technique for Voltage Source Inverters" IEEE Transactions on Power Electronics, Vol. 28, Issue 8, pp. 4113-4119, August 2013.

A. Perez-Tomas, A. Fontsere, M. Placidi, M. R. Jennings, P. M. Gammon, "Modelling the metal-semiconductor band structure in implanted ohmic contacts to GaN and SiC" MODELLING AND SIMULATION IN MATERIALS SCIENCE AND ENGINEERING, Vol. 21, Issue 3, April 2013.

M. R. Jennings, A. Pérez-Tomás, A. Severino, P. Ward , A. Bashir, C. A. Fisher, S. M. Thomas, P. M. Gammon, B. T. Donnellan, H. Rong, D. P. Hamilton, P. A. Mawby "Innovative 3C-SiC on SiC via Direct Wafer Bonding" Materials Science Forum, Vol. 740, pp. 271-274, 2013.

P. M. Gammon, A. Pérez-Tomás, M. R. Jennings, A. M. Sanchez, C. A. Fisher, S. M. Thomas, B. T. Donnellan, P. A. Mawby "Bipolar Conduction across a Wafer Bonded p-n Si/SiC Heterojunction" Materials Science Forum, Vol. 740, pp. 1006-1009, January 2013.

2012

P. M. Gammon, E. Donchev, A. Perez-Tomas, V. A. Shah, J. S. Shang, P. K. Petrov, M. R. Jennings, C. A. Fisher, P. A. Mawby, D. R. Leadley, N. M. Alford "A study of temperature-related non-linearity at the metal-silicon interface" Journal of Applied Physics, Vol. 112, No. 11, 114513, December 2012

M. R. Jennings, A. Perez-Tomas, A. Bashir, A. Sanchez, A. Severino, P. J. Ward, S. M. Thomas, C. A. Fisher, P. M. Gammon, M. Zabala, S. E. Burrows, B. Donnellan, D. P. Hamilton, D. Walker, P. A. Mawby, "Bow Free 4 '' Diameter 3C-SiC Epilayers Formed upon Wafer-Bonded Si/SiC Substrates" ECS Solid State Letters, Vol. 1, Issue 6, pp. 85-88, 2012

O. Alatise, N-A. Parker-Allotey, D. Hamilton, P. A. Mawby "The Impact of Parasitic Inductance on the Performance of Silicon-Carbide Schottky Barrier Diodes" IEEE Transactions on Power Electronics, Vol. 27, Issue 8, pp. 3826-3833, August 2012.

O. Alatise, N-A. Parker-Allotey, P. A. Mawby "Modeling the Electrothermal Stability of Power MOSFETs During Switching Transients" IEEE Electron Device Letters, Vol. 33, Issue 7, pp. 1039-1041, July 2012.

I. R. Swan, A.T. Bryant, P. A. Mawby "Fast 3D thermal simulation of power module packaging" International Journal of Numerical Modelling-Electronic Networks Devices and Fields, Vol. 25, Issue 4, pp. 378-399, July-Aug 2012.

C. A. Fisher, M. R. Jennings, A. T. Bryant, A. Pérez-Tomás, P. M. Gammon, P. Brosselard, P. Godignon, and P. A. Mawby, "Physical Modelling of 4H-SiC PiN Diodes” Materials Science Forum, Vol. 717-720, pp. 993 - 996, May 2012.

B.T. Donnellan, G. J. Roberts, P. A. Mawby, A. T. Bryant "Modelling of current sharing in paralleled current limiting superjunction MOSFETs with common gate drives" Microelectronics Reliability, Vol. 52, Issue 3, pp. 497-502, March 2012.

D. W. Xiang, L. Ran, P. Tavner, S. Y. Yang, A. T. Bryant, P. A. Mawby "Condition Monitoring Power Module Solder Fatigue Using Inverter Harmonic Identification" IEEE Transactions on Power Electronics, Vol. 27, Issue 1, pp. 235-247, January 2012.

A. T. Bryant, N-A. Parker-Allotey, D. Hamilton, I. Swan, P. A. Mawby, T. Ueta, T. Nishijima, K. Hamada "A Fast Loss and Temperature Simulation Method for Power Converters, Part I: Electrothermal Modeling and Validation" IEEE Transactions on Power Electronics, Vol. 27, Issue 1, pp. 248-257, January 2012.

I. Swan, A. T. Bryant, P. A. Mawby, T. Ueta, T. Nishijima, K. Hamada "A Fast Loss and Temperature Simulation Method for Power Converters, Part II: 3-D Thermal Model of Power Module" IEEE Transactions on Power Electronics, Vol. 27, Issue 1, pp. 258-268, January 2012.

 

2011

D. W. Xiang, L. Ran, P. Tavner, A. T. Bryant, S. Y. Yang, P. A. Mawby "Monitoring Solder Fatigue in a Power Module Using Case-Above-Ambient Temperature Rise" IEEE Transactions on Industry Applications, Vol. 47, Issue 6, pp. 2578-2591, November 2011

O. Alatise, N-A. Parker-Allotey, M. Jennings, P. Mawby, I. Kennedy and G. Petkos, “Modeling the Impact of the Trench Depth on the Gate-Drain Capacitance in Power MOSFETs” IEEE Electron Device Letters, Vol. 32, Issue 9, pp. 1269-1271, September 2011.

Y. Shaoyong, A. Bryant, P. Mawby, X. Dawei, R. Li, P. Tavner, "An Industry-Based Survey of Reliability in Power Electronic Converters" IEEE Transactions on Industry Applications, Vol. 47, No. 3, pp. 1441-1451, June 2011.

J. Wang, L. Yang, X. Luo, S. Mangan, J.W. Derby "Mathematical Modelling Study of Scroll Air Motors and Energy Efficiency Analysis - Part I", IEEE/ASME Trans. on Mechatronics, Vol. 16, Issue 1, pp. 112-121, February 2011.

J. Wang, X. Luo, L. Yang, L. Shpanin, N. Jia, S. Mangan "Mathematical Modelling Study of Scroll Air Motors and Energy Efficiency Analysis - Part II", IEEE/ASME Trans. on Mechatronics, Vol. 16, Issue 1, pp. 122-132, February 2011.

2010

S. Yang, D. Xiang, A. Bryant, P. Mawby, L. Ran, P. Tavner, "Condition Monitoring for Device Reliability in Power Electronic Converters: A Review" IEEE Transactions on Power Electronics, vol. 25, No. 11, pp. 2734-2752, November 2010.

P. M. Gammon, A. Pérez-Tomás, M. R. Jennings, O. J. Guy, N. Rimmer, J. Llobet, N. Mestres, P. Godignon, M. Placidi, M. Zabala, J. A. Covington, and P. A. Mawby, " Integration of HfO(2) on Si/SiC heterojunctions for the gate architecture of SiC power devices" Applied Physics Letters, Vol. 97, No. 1, 013506, July 2010.   

P. M. Gammon, A. Pérez-Tomás, M. R. Jennings, V. A. Shah, S. A. Boden, M. C. Davis, S. E. Burrows, N. R. Wilson, G. J. Roberts, J. A. Covington, and P. A. Mawby " Interface characteristics of n-n and p-n Ge/SiC heterojunction diodes formed by molecular beam epitaxy deposition" Journal of Applied Physics, Vol. 107, No. 12, 124512, June 2010.

2009

P. M. Gammon, A. Pérez-Tomás, V. A. Shah, G. J. Roberts, M. R. Jennings, J. A. Covington, and P. A. Mawby "Analysis of inhomogeneous Ge/SiC heterojunction diodes" Journal of Applied Physics, Vol. 106, No. 9, 093708, November 2009.

P. M. Gammon, A. Pérez-Tomas, M. R. Jennings, G. J. Roberts, M. C. Davis, V. A. Shah, S. E. Burrows, N. R. Wilson, J. A. Covington, P. A. Mawby "Characterization of n-n Ge/SiC heterojunction diodes" Applied Physics Letters, Vol. 93, No. 11, 112104, September 2008.

M. R. Jennings, A. Pérez-Tomas, O. J. Guy, R. Hammond, S. E. Burrows, P. M. Gammon, M. Lodzinski, J. A. Covington, P. A. Mawby, "Si/SiC Heterojunctions Fabricated by Direct Wafer Bonding", Electrochemical and Solid-State Letters, Vol. 11, Issue 11, pp. H306-H308, September 2008.

A. Pérez-Tomás, M. R. Jennings, P. A. Mawby, J. Millán, P.Godignon, J. Montserrat, E. Rossinyol, P. Vennegues and J. Stoemenos, “Interfacial properties of thermal oxidized Ta2Si on Si”, Surface and Interface Analysis, Vol. 40, Issue 8, pp. 1164-1167, August 2008.

A. Binder and A. Muetze, “Scaling effects of inverter-induced bearing currents in ac machines,” IEEE Transactions on Industry Applications, Vol. 44, Issue 3, pp. 769-776, May/June 2008.

A.T. Bryant, P.A. Mawby, P.R. Palmer, E. Santi, and J.L Hudgins. "Exploration of power device reliability using compact device models and fast electro-thermal simulation." IEEE Trans. Industry Applications, Vol. 44, Issue 3, pp. 894-903, May 2008.

A.T. Bryant, L. Lu, E. Santi, J.L. Hudgins, and P.R. Palmer. "Modeling of IGBT resistive and inductive turn-on behavior." IEEE Trans. Industry Applications, Vol. 44, No. 3, pp. 904-914, May 2008.

A. Pérez-Tomás, M. R. Jennings, P. M. Gammon, G. J. Roberts, P. A. Mawby, J. Millán, P.Godignon, J. Montserrat, N. Mestres, “SiC MOSFETs with thermally oxidized Ta2Si stacked on SiO2 as high-k gate insulator”, Microelectronic Engineering vol. 85, No. 4, pp. 704-709, April 2008.

A.T. Bryant, G.J. Roberts, A. Walker, P.A. Mawby, T. Ueta, T. Nisijima and K. Hamada. "Fast inverter loss and temperature simulation and silicon carbide device evaluation for hybrid electric vehicle drives". IEEJ Trans. D: Industry Applications, Vol. 128, No. 4, pp. 441-449, April 2008.

A. Muetze, “Deterministic global optimization of electromechanical energy converters: a neglected stepchild?” IEEE Magazine Industry Applications magazine, Vol. 14, Issue 2, pp. 14-22, March/April 2008.

A. Muetze and H.W. Oh, “Application of static charge dissipation to mitigate electric discharge bearing currents,” IEEE Transactions on Industry Applications, Vol. 44, No. 1, pp. 135, January/February 2008.

A.T. Bryant, L. Lu, E. Santi, P.R. Palmer, and J.L. Hudgins. "Physical modelling of fast p-i-n diodes with carrier lifetime zoning, part I: Device model", IEEE Trans. Power Electronics, Vol. 23, Issue 1, pp. 189-197, January 2008.

L. Lu, A.T. Bryant, E. Santi, P.R. Palmer, and J.L. Hudgins. "Physical modelling of fast p-i-n diodes with carrier lifetime zoning, part II: Parameter extraction", IEEE Trans. Power Electronics, Vol. 23, No. 1, pp. 198-205, January 2008.

2007

A. Perez-Tomas, M. R. Jennings, M. Davis, J. A. Covington, P. A. Mawby, V. Shah, and T. Grasby, "Characterization and modeling of n-n Si/SiC heterojunction diodes", Journal of Applied Physics, Vol. 102, No. 1, 014505, July 2007.

A. Pérez-Tomás, M.R. Jennings, P.A. Mawby, J.A. Covington, P. Godignon, J. Millán, N. Mestres “SiC MOSFET Channel Mobility Dependence on Substrate Doping and Temperature Considering High Density of Interface Traps” Materials Science Forum Vols. 556-557 (2007) pp. 835-838

A. Pérez-Tomás, M. R. Jennings, M. Davis, V. Shah, T. Grasby, J. A. Covington and P. A. Mawby, "High doped MBE Si p-n and n-n heterojunction diodes on 4H-SiC", Microelectronics Journal, Vol. 38, No. 12, pp. 1233-1237, December 2007.

A. Muetze and A. Binder, “Calculation of circulating bearing currents in machines of inverter-based drive systems,” IEEE Transactions on Industrial Electronics, vol. 54, no. 2, pp. 932-938, April 2007.

A. Muetze and A. Binder, “Calculation of motor capacitances for prediction of the voltage across the bearings in machines of inverter-based drive systems,” IEEE Transactions on Industry Applications, vol. 43, no. 3, pp. 665-672, May/June 2007.

A. Muetze and Y.C. Tan, “Performance evaluation of electric bicycles,” IEEE Magazine on Industry Applications, vol. 13, no. 4, pp. 12-21, July/August 2007

A. Muetze and A. Binder, “Practical rules for assessment of bearing currents in inverter-fed ac motors up to 500 kW,” IEEE Transactions on Industrial Electronics, vol. 54, no. 3, pp. 1614-1622, June 2007.

A. Muetze and A. Binder, “Techniques for measurement of parameters related to inverter-induced bearing currents,” IEEE Transactions on Industry Applications, vol. 43, no. 5, pp. 1274-1283, September/October 2007.

A.T. Bryant, Y. Wang, S.J. Finney, T-C. Lim, and P.R. Palmer. "Numerical optimization of an active voltage controller for high-power IGBT converters", IEEE Trans. Power Electronics, 22(2):374-383, March 2007.

A.T. Bryant, P.R. Palmer, E. Santi and J.L. Hudgins, "Simulation and Optimization of Diode and IGBT Interaction in a Chopper Cell using MATLAB and Simulink", IEEE Trans. Industry Applications, 43(4), July 2007.

A.T. Bryant, N-A. Parker-Allotey and P.R. Palmer, "The Use of Condition Maps in the Design and Testing of Power Electronic Circuits and Devices", IEEE Trans. Industry Applications, 43(4), July 2007.

C. Elsholtz and A. Muetze, “Using Sudoku for mathematics instruction,” [Sudoku im Mathematikunterricht; in German] Mathematische Semesterberichte, vol. 54, no. 1, pp. 69-93, March 2007. (Anhänge/Appendices)

L. Chen, O.J. Guy, M.R. Jennings, P. Igic, S.P. Wilks, P.A. Mawby “Study of a novel Si/SiC hetero-junction MOSFET” Solid-State Electronics 51 (2007) 662–666, May 2007

M.R. Jennings, A. Perez-Tomas, M. Davies, D. Walker, J.A. Covington et. al. "Analysis of Al/Ti, Al/Ni multiple and triple layer contacts to p-type 4H-SiC", Solid State Electronics, 51 (5): 797-801 (2007).

M.R. Jennings, A. Pérez-Tomás, D. Walker, L. Zhu, P. Losee, W. Huang, S. Balachandran, O.J. Guy, J.A. Covington, T.P. Chow and P.A. Mawby “Development of Low Resistance Al/Ti Stacked Metal Contacts to p-type 4H-SiC” Materials Science Forum Vols. 556-557 (2007) pp. 697-700

 

2006

A. Muetze and A. Binder, “Don’t lose your bearings – Mitigation techniques for bearing currents in inverter-supplied drive systems,” IEEE Magazine on Industry Applications, vol. 12, no. 4, pp. 22-31, July/August 2006.

A. Muetze and A. Binder, “Calculation of the influence of insulated bearings and insulated inner bearing seats on circulating bearing currents in machines of inverter-based drive systems,” IEEE Transactions on Industry Applications, vol. 42, no. 4, pp. 965-972, July/August 2006.

A. Muetze, A. Binder, H. Vogel, J. Hering, “What can bearings bear? – How much current is too much? How much current reduction enough?” IEEE Magazine on Industry Applications, vol. 12, no. 6, pp. 57-64, November/December 2006.

A. Perez-Tomas, P. Brosselard, P. Godignon, J. Millan, N. Mestres, M. R. Jennings, J. A. Covington, and P. A. Mawby, "Field-effect mobility temperature modelling of 4H-SiC metal-oxide-semiconductor transistors", Journal of applied Physics, 100, 114508 (2006).

A.T. Bryant, X. Kang, E. Santi, P.R. Palmer, and J.L. Hudgins. "Two-step parameter extraction procedure with formal optimization for physics-based circuit simulator IGBT and PIN diode models", IEEE Trans. Power Electronics, 21(2):295-309, March 2006.

Forsyth AJ, Yang SY, Mawby PA, P. Igic “Measurement and modelling of power electronic devices at cryogenic temperatures” IEEE PROCEEDINGS-CIRCUITS DEVICES AND SYSTEMS, 153 (5): 407-415, Oct 2006.

L.Chen, O.J.Guy, D.Dnoneddu,S.G.J.Batcup, S.P.Wilks, P.A.Mawby, T.Bouchet, F.Torragrosa “Report on 4H-SiC JTE Schottky diodes” Microelectronics Reliability, 46(2006) 637-640 Feb 2006

M.M.R. Ahmed, G.A.Putrus, L.Ran and R. Penlington “ Development of a Prototype Solid-State Fault Current Limiting and Interrupting Device for Low Voltage Distribution Networks,” accepted and to be publish in IEEE Transactions on Power delivery, 2006.

O.J. Guy, D. Doneddu, L. Chen, M.R. Jennings, M.P. Ackland, R. Baylis, M.D. Holton, P. Dunstan, S.P. Wilks and P.A. Mawby “Improved Schottky contacts to annealed 4H-SiC using a protective carbon cap: Investigated using current voltage measurements and atomic force microscopy “ DIAMOND AND RELATED MATERIALS 15 (9): 1472-1477 SEP 2006

Z Zhou, MS Khanniche, P Igic, P.A.Mawby “A fast power loss calculation method for long real time thermal simulation of IGBT modules for a three-phase inverter system” INTERNATIONAL JOURNAL OF NUMERICAL MODELLING-ELECTRONIC NETWORKS DEVICES AND FIELDS 19 (1): 33-46 JAN-FEB 2006

 

2005

A. Binder and A. Muetze, “Reliably preventing damages – remedy measures for bearing currents caused by inverters in industrial drives – magnitudes and mitigation techniques for power levels,” [Schäden sicher verhindert – Abhilfemaßnahmen für umrichterbedingte Lagerströme in Industrieantrieben; in German] antriebstechnik, vol. 44, no. 1, pp. 36-40, 2005.

A. Muetze and A. Binder, “Systematic approach to bearing current evaluation in variable speed drive systems,” European Transactions on Electrical Power, vol. 15, no. 3, pp. 217-227, 2005.

L. Chen, O. J. Guy, M. R. Jennings, P. Igic, S. P. Wilks and P. A. Mawby, "Study of 4H–SiC trench MOSFET structures," Solid-State Electronics, Volume 49, Issue 7, July 2005, pp. 1081-1085.

 

2004

M.M.R. Ahmed, G.A.Putrus, L.Ran and L.Xiao, “Harmonic analysis and improvement of a new solid-state fault current limiter,” IEEE Transactions on Industry Applications, July/August, 2004.

 

2003

Giniotis V, Crofts WE, Hope T, Stankunas J; The Telemetric Means for 3-D Measurements; Fifth International Seminar on “Recent Research and Design Progress in Aeronautical Engineering and its Influence on Education”; Vol 7, No.2, ISSN 1648-7788, Vilnius, Lithuania; 2003; pp 35-44