• C. A. Fisher et al. “On the electrical performance of lifetime-enhanced 4H-silicon carbide PiN diodes”, ISPS, Prague, August 2014.
• C. A. Fisher et al. “Lifetime-enhanced 4H-SiC PiN diodes obtained via high temperature oxidation”, ECSCRM ‘14, Grenoble, September 2014.
• “Unexpected change in the electron affinity of diamond caused by the ultra-thin transition-metal-oxide films”. To be published in Europhysics Letters.
• Poster titled “Tuning optoelectronic properties of 4H-SiC QDs using –H, –OH and –F surface functionalisation”, ECSCRM ’14, Grenoble.
• 'Development of 4H-SiC PiN diodes with enhanced carrier lifetimes’ at the 65th De Beers Diamond Conference, Warwick, UK, July 2014.
• G. Camuso et al presented at the EPE 2014 conference: “Avalanche ruggedness of 800V Lateral IGBTs in bulk Si”. 10.1109/EPE.2014.6910917
• C. A. Fisher et al., 'Improved performance of 4H-SiC PiN diodes using a novel combined high temperature oxidation and annealing process’, IEEE Transactions on Semiconductor Manufacturing, in press July 2014.
• C. A. Fisher et al. “On the Schottky barrier height lowering effect of Ti3SiC2 in ohmic contacts to p-type 4H-SiC”, IJFPS, 4(3), pp. 95-100, 2014. 10.14331/ijfps.2014.330071
• “Implications of gate edge electric field in AlGaN/GaN high electron mobility transistors during off-state degradation”, H. Sun, M. Montes Bajo, M. J. Uren, M. Kuball, Microelectronics Reliability. 10.1016/j.microrel.2014.09.020
• C. A. Fisher et al. “On the application of novel high temperature oxidation processes to enhance the performance of high voltage silicon carbide PiN diodes”, presented at EPE-ECCE, Finland, August 2014. 10.1109/EPE.2014.6910738
• C. A. Fisher, “Enhanced Forward Bias Operation of 4H-SiC PiN Diodes Using High Temperature Oxidation”, Material Research Society (MRS), San Francisco, April 2014. 10.1557/opl.2014.714
• Effect of Bandgap Narrowing on Performance of Modern Power Devices. 10.1109/TED.2013.2286528