Tescan Amber FIB-SEM

TESCAN AMBER

FIB-SEM

Information

The Focused Ion Beam Scanning Electron Microscope (FIB-SEM) is a dual-beam system, combining the imaging capabilities of SEM with the locally destructive powers of the FIB. The FIB column utilises gallium ions to sputter material from the surface of the sample within a user-defined area, allowing for very precise cutting. The SEM column is used to image these processes in real time, giving good control. A micromanipulator is available which allows the user to pick up and move small sample objects, whilst the Gas Injection System (GIS) is used for deposition of a variety of materials onto the sample surface.

This opens up the possibility to investigate materials in cross-section by milling trenches for direct observation of the cut face using SEM. Where high-resolution imaging is required, we can make electron transparent sections from specific sites with sub-micron precision, ready for imaging in a TEM.

Specification

FIB

Resolution of 2.5 nm at 30 keV.
Accelerating voltage 0.5 to 30 kV.
Magnification 30 to 300000x.
Probe current: < 1 pA–100 nA.

SEM

Resolution of 1.5 nm at 1 keV.
Resolution of 0.9 nm at 15 keV.
Accelerating voltage 50V to 30 kV.
Dual in-column SE and BSE detectors.
STEM detector.

Additional

Oxford Instruments Omniprobe 400.
5-GIS - Pt, C, SiO2, H2O, F.
Single GIS - Pt.
Oxford Instruments X-Max 150 EDS.
Plasma cleaner.

Site-specific TEM sample preparation

The FIB-SEM proves to be an increasingly popular tool for producing high quality TEM specimens. Benefits over traditional polishing include highly accurate site specificity, fast and precise (2hrs) lamella preparation with minimal material wastage, which is particularly important for precious samples.

Final sample thickness can be tuned for the intended analysis. Thicker samples upwards of 100nm are produced for EDX or diffraction contrast imaging. Thinner samples below 50nm can be achieved for atomic-resolution imaging or EELS analysis.

Typical use cases:

Precise layer thickness measurements (where nm resolution is required). e.g. heterostructures, coatings,
Defect analysis. Individual defects can be isolated for extraction, such as contaminants, pits, or defected regions found through PL/CL imaging.
Interface analysis. The interface quality can be examined at up to atomic-resolution.

Top: A standard workflow for producing TEM lamella. Courtesy of Steve Hindmarsh

Bottom left and right: Atomic-resolution micrographs of a LAO/STO thin film, taken along the <111> direction. The TEM sample was prepared using our Tescan Amber FIB-SEM, and imaged in the JEOL ARM200f. Courtesy of Yining Xie

Cross-sectional imaging

The FIB-SEM is the perfect tool for creating and imaging small cross-sections, revealing features that are hidden below the sample surface. High current ion beam milling can quickly remove material, before utilising lower current beams to create a polished face, ready for imaging with the electron beam.

Sensible maximum dimensions for sections created with a Ga+ ion beam would be:

Sectioning downwards into the surface of a bulk material. <200µm wide by 20µm deep.
Sectioning a particle on the sample surface, or polishing the edge face of a bulk sample. <200µm wide by 100µm deep.

Typical use cases:

Layer/coating thickness measurements, where layers are >20nm.
Void analysis. Porosity.
Grain size/boundary analysis.

The example on the right shows a cross-sectional slice through a PVC particle. Voids within the internal structure are easily seen, providing valuable information for the researcher.

Sample courtesy of Matt Donald

Image courtesy of Steve Hindmarsh