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Dr Craig Fisher

Craig A. Fisher

Dr. Craig A. Fisher B.Eng (Hons), M.Sc. (Dist.), Ph.D.

Research Fellow - Silicon Carbide Power Electronics

School of Engineering
University of Warwick
Coventry
CV4 7AL, UK.

Room D032
Tel: +44 (0) 2476 151293
Email: Craig dot A dot Fisher at warwick dot ac dot uk

Background

Craig was born in Warwickshire, England, in 1984. He graduated with a 1st class B.Eng honours degree in Electronics Engineering from Coventry University in 2008, which was undertaken whilst working in industry as an Electronics Design Engineer, where he was primarily responsible for the development of sensor interfaces and motor control systems for aerospace applications. Following this, in Autumn 2008 he came to the University of Warwick to undertake a M.Sc in Advanced Electronics Engineering, graduating with Distinction in 2010. His interest in power electronics led him to undertake a Ph.D under the supervision of Professor Philip Mawby in the PEATER group at Warwick. His Ph.D focused on the development of 4H-silicon carbide (SiC) power semiconductor devices for high voltage applications (~10 kV), and was funded via the EPSRC HubNet project. He completed his Ph.D in February 2014, and now works as a Research Fellow on the EPSRC Underpinning Power Electronics project, responsible for the development of high voltage 4H-SiC PiN diode and MOSFET devices. He is a member of the IET and the IEEE, and has acted as a reviewer for the IEEE Transactions on Semiconductor Manufacturing journal.

Research Interests

  1. 4H-SiC power semiconductor device fabrication for high voltage (~10 kV) and high temperature (>300°C) applications.
  2. High voltage / high temperature device characterisation.
  3. Power grid applications.
  4. 4H-SiC power device modelling.
  5. 4H-SiC integrated circuits.

Peer-Reviewed Publications

Journal Publications

C. A. Fisher, M. R. Jennings, Y. K. Sharma, D. P. Hamilton, P. M. Gammon, A. Pérez-Tomás, S. M. Thomas, S. E. Burrows and P. A. Mawby, "Improved performance of 4H-SiC PiN diodes using a novel combined high temperature oxidation and annealing process", IEEE Transactions on Semiconductor Manufacturing, 27(3), pp. 443-451, 2014.

C. A. Fisher, M. R. Jennings, Y. K. Sharma, A. Sanchez, D. Walker, P. M. Gammon, A. Pérez-Tomás, S. M. Thomas, S. E. Burrows and P. A. Mawby, "On the Schottky barrier height lowering effect of Ti3SiC2 in ohmic contacts to p-type 4H-SiC", International Journal of Fundamental Physical Sciences, 4(3), pp. 95-100, 2014.

M. R. Jennings, C. A. Fisher, D. Walker, A. Sanchez, A. Pérez-Tomás, D. P. Hamilton, P. M. Gammon, S. E. Burrows, S. M. Thomas, Y. K. Sharma, F. Li and P. A. Mawby, "Physical and electrical characterisation of 3C-SiC and 4H-SiC for power semiconductor device applications", Physics of Semiconductor Devices, pp. 929-932, 2014.

S. Jahdi, O. Alatise, C. A. Fisher, L. Ran and P. A. Mawby, "An evaluation of silicon carbide unipolar technologies for electric vehicle drive-trains", IEEE Journal of Emerging and Selected Topics in Power Electronics, 2(3), pp. 517-528, 2014.

Y. K. Sharma, Y. Xu, M. R. Jennings, C. A. Fisher, P. A. Mawby, L. C. Feldman and J. R. Williams, "Improved stability of 4H-SiC MOS devices after phosphorous passivation with etching process", International Journal of Fundamental Physical Sciences, 4(2), pp. 37-42, 2014.

S. Jahdi, O. Alatise, R. Bonyadi, P. Alexakis, C. A. Fisher, J. A. Ortiz Gonzalez, L. Ran and P. A. Mawby, ''An analysis of the switching performance and reliability of power MOSFETs body diodes: A technology evaluation", IEEE Transactions on Power Electronics, Volume:PP, Issue:99, 2014 (in Press).

S. M. Thomas, Y. K. Sharma, M. A. Crouch, C. A. Fisher, A. Pérez-Tomás, M. R. Jennings and P. A. Mawby, "Enhanced field effect mobility on 4H-SiC by oxidation at 1500°C", IEEE Journal of the Electron Devices Society, 2(5), PP. 114-117, 2014.

Y. K. Sharma, A. C. Ahyi, T. Issacs-Smith, A. Modic, Y. Xu, E. Garfunkel, M. R. Jennings, C. A. Fisher, S. M. Thomas, L. Fan, P. A. Mawby, S. Dhar, L. C. Feldman and J. R. Williams, "Advancements in SiC Power Devices Using Novel Interface Passivation Processes", Physics of Semiconductor Devices, pp. 47-52, 2014.

P. M. Gammon, A. Pérez-Tomás, V. A. Shah, O. Vavasour, E. Donchev, J. S. Pang, M. Myronov, C. A. Fisher, M. R. Jennings, D. R. Leadley and P. A. Mawby, "Modelling the inhomogeneous SiC Schottky interface",
J. Appl. Phys. 114, 223704, 2013.

P. M. Gammon, E. Donchev, A. Pérez-Tomás, V. A. Shah, J. S. Pang, P. K. Petrov, M. R. Jennings, C. A. Fisher, P. A. Mawby, D. R. Leadley and N. McN. Alford, "A study of temperature-related non-linearity at the metal-silicon interface", J. Appl. Phys. 112, 114513, 2012.

A. Fontsere, A. Pérez-Tomás, M. Placidi, J. Llobet, N. Baron, S. Chenot, Y. Cordier, J. C. Moreno, M. R. Jennings, P. M. Gammon, C. A. Fisher, V. Iglesias, M. Porti, A. Bayerl, M. Lanza and M. Nafria, "Nanoscale investigation of AlGaN/GaN-on-Si high electron mobility transistors", Nanotechnology, 23, 395204, 2012.

M. R. Jennings, A. Pérez-Tomás, A. Bashir, A. M. Sanchez, A. Severino, P. J. Ward, S. M. Thomas, C. A. Fisher, P. M. Gammon, M. Zabala, S. E. Burrows, B. T. Donnellan, D. P. Hamilton, D. Walker and P. A. Mawby, "Bow Free 4" Diameter 3C-SiC Epilayers Formed upon Wafer-Bonded Si/SiC Substrates", ECS Solid State Lett. 1, 6, 85, 2012.

Conference Publications

C. A. Fisher, M. R. Jennings, Y. K. Sharma, D. P. Hamilton, F. Li, P. M. Gammon, A. Pérez-Tomás, S. M. Thomas, S. E. Burrows and P. A. Mawby, "Lifetime-enhanced 4H-SiC PiN diodes obtained via high temperature oxidation”, Presented at the European Conference on Silicon Carbide and Related Materials (ECSCRM), Grenoble, France, September 2014.

C. A. Fisher, M. R. Jennings, Y. K. Sharma, D. P. Hamilton, S. M. Thomas, F. Li, P. M. Gammon, A. Pérez-Tomás, S. E. Burrows and P. A. Mawby, "On the electrical performance of lifetime-enhanced 4H-silicon carbide PiN diodes”, Presented at the 12th International Seminar on Power Semiconductors (ISPS), Prague, August 2014.

C. A. Fisher, M. R. Jennings, Y. K. Sharma, D. P. Hamilton, S. M. Thomas, F. Li, P. M. Gammon, A. Pérez-Tomás, S. E. Burrows and P. A. Mawby, "On the application of novel high temperature oxidation processes to enhance the performance of high voltage silicon carbide PiN diodes”, Presented at EPE '14-ECCE Europe, Finland, August 2014.

C. A. Fisher, M. R. Jennings, Y. K. Sharma, V. A. Shah, F. Li, P. M. Gammon, S. M. Thomas, S. E. Burrows and P. A. Mawby, "Development of 4H-silicon carbide PiN diodes with enhanced carrier lifetimes", Presented at the 65th De Beers Diamond Conference, University of Warwick, UK, July 2014.

C. A. Fisher, M. R. Jennings, Y. K. Sharma, D. P. Hamilton, S. M. Thomas, F. Li, P. M. Gammon, A. Pérez-Tomás, S. E. Burrows and P. A. Mawby, "Enhanced forward bias operation of 4H-SiC PiN diodes using high temperature oxidation”, in Proceedings of the Materials Research Society (MRS) Spring Meeting 2014, vol. 1693, 2014.

F. Li, Y. K. Sharma, C. A. Fisher, M. R. Jennings and P. A. Mawby, "A novel 3C-SiC on Si power Schottky diode design and modelling", in Proceedings of the Materials Research Society (MRS) Spring Meeting 2014, vol. 1693, 2014.

D. P Hamilton, M. R. Jennings, C. A. Fisher, Y. K. Sharma, S. J. York and P. A. Mawby, "Characteristics and ageing of SiC MOSFETs operated at very high temperatures", in Proceedings of the Materials Research Society (MRS) Spring Meeting 2014, vol. 1693, 2014.

D. P. Hamilton, M. R. Jennings, Y. K. Sharma, C. A. Fisher, O. Alatise and P. A. Mawby, "Evaluation of commercially available SiC devices and packaging materials for operation up to 350°C", Presented at ECCE 2014, Pittsburgh, USA, September 2014.

M. R. Jennings, C. A. Fisher, D. Walker, A. Sanchez, A. Pérez-Tomás, D. P. Hamilton, P. M. Gammon, S. E. Burrows, S. M. Thomas, Y. K. Sharma, F. Li and P. A. Mawby, "On the Ti3SiC2 metallic phase formation for robust p-type ohmic contacts", Presented at the International Conference on Silicon Carbide and Related Materials (ICSCRM), Miyazaki, Japan, 2013.

P. M. Gammon, C. A. Fisher, V. A. Shah, M. R. Jennings, A. Pérez-Tomás, S. E. Burrows, M. Myronov, D. R. Leadley and P. A. Mawby, "The cryogenic testing and characterisation of SiC PiN diodes", Presented at the International Conference on Silicon Carbide and Related Materials (ICSCRM), Miyazaki, Japan, 2013.

S. M. Thomas, M. R. Jennings, Y. K. Sharma, C. A. Fisher and P. A. Mawby “Impact of oxidation temperature on the interface trap density of 4H-SiC MOS capacitors”, Presented at the International Conference on Silicon Carbide and Related Materials (ICSCRM), Miyazaki, Japan, 2013.

Y. K. Sharma, A. C. Ahyi, T. Issacs-Smith, A. Modic, Y. Xu, E. Garfunkel, M. R. Jennings, C. A. Fisher, S. M. Thomas, P. A. Mawby, S. Dhar, L. C. Feldman and J. R. Williams, “Thin PSG Process for 4H-SiC MOSFET”, Presented at the International Conference on Silicon Carbide and Related Materials (ICSCRM), Miyazaki, Japan, 2013.

C. A. Fisher, M. R. Jennings, A. T. Bryant, A. Pérez-Tomás, P. M. Gammon, P. Brosselard, P. Godignon and P. A. Mawby, "Physical Modelling of 4H-SiC PiN Diodes”, Mat. Sci. Forum, 717-720, pp. 993-996, 2012.

S. M. Thomas, M. R. Jennings, C. A. Fisher and P. A. Mawby “High temperature oxidation of 4H-SiC”, Presented at the European Conference on Silicon Carbide and Related Materials (ECSCRM), St. Petersburg, Russia, 2012.

M. R. Jennings, A. Pérez-Tomás, A. Severino, P. J. Ward, A. Bashir, C. A. Fisher, S. M. Thomas, P. M. Gammon, B. Donnellan, H. Rong, D. P. Hamilton and P. A. Mawby, "Bow Free 4-inch 3C-SiC via Si/SiC Direct Wafer Bonding", Presented at the European Conference on Silicon Carbide and Related Materials (ECSCRM), St. Petersburg, Russia, 2012.

P. M. Gammon, A. Pérez-Tomás, M. R. Jennings, A.M. Sanchez, C. A. Fisher, S. M. Thomas, B. T. Donnellan and P. A. Mawby, "Bipolar conduction across a wafer bonded p-n Si/SiC heterojunction", Presented at the European Conference on Silicon Carbide and Related Materials (ECSCRM), St. Petersburg, Russia, 2012.

Presentations

"Enhanced Performance of 4H-Silicon Carbide PiN Diodes Using a Novel High Temperature Fabrication Process", ISiCPEAW 2014, 25-27 May 2014, Stockholm, Sweden.