Research Fellow

Office DO13, School of Engineering, University of Warwick, CV4 7AL.

Tel: +44(0)247 615 1293

Fax: +44(0)247 615 8922

Email: Y dot K dot Sharma at warwick dot ac dot uk

Research Interests

Wide band semiconductors,currenty, SiC devices on 3C and 4H ploytypes.

Working with Professor Phil Mawby

Projects:
Development of 600V Schottky and 1200V MOSFET on 3C-SiC/Si using novel high temperature oxidation process
Ion-implantation studies to fabricate ohmic contacts on 3C-SiC/Si
Development of 10kV 4H-SiC MOSFET

Top and Tail (http://www.topandtail.org.uk/unis/warwick.html)

VESI (http://www2.warwick.ac.uk/fac/sci/eng/research/profile/pam/)

 Previous Positions

Research and Teaching Assistant, Auburn University, AL, USA, Advisors: Prof. John Williams and Prof. Minseo Park

• Development of the improved nitrogen plasma process for the 4H-SiC/SiO2 interfaces
• Phosphorus passivation on the 4H-SiC/SiO2 interfaces
• Fabrication and use of AlGaN/GaN HEMTs for bio-sensing applications
Graded and taught hands-on lab in classes: Undergraduate Physics (General, Engineering and Honors Physics)

August 2004- June 2007
Worked as a lecturer and taught undergraduates Physics and Mathematics courses, India

Educational Background

2010 May – 2012 December Auburn University, AL, USA

Doctor of Philosophy in Physics, Dissertation Title: “Advanced SiO₂/SiC interface passivation” Advisor: Professor John Williams
2007 August – 2010 May, Auburn University, AL, USA, Master of Science in Physics

Journal Publications

1. Y. Xu, X. Zhu, H. D. Lee, Y. Sharma, L. C. Feldmanet al., “Atomic state and characterization of nitrogen at the SiC/SiO2 interface”, J. Appl. Phys. 115, 033502 (2014)
2. P. Liu, G. Li, Y. K. Sharma, Y. Xu, G. Duscher et al., “Roughness of the SiC/SiO2 Vicinal Interface and Its Influence on the Electron Mobility of SiC-MOSFETs” (submitted- Appl. Phys. Lett.).
3. A. Modic, Y. Sharma, Y. Xu, G. Liu, A. Ahyi, J. Williams, et al., "Nitrogen Plasma Processing of SiO2/4H-SiC Interfaces," Journal of Electronic Materials, pp. 1-6.
4. Y.K. Sharma, A.C. Ahyi, L.C. Feldman, J.R. Williams et al., “High-Mobility Stable 4H-SiC MOSFETs Using a Thin PSG Interfacial Passivation Layer”, IEEE Elec. Dev. Lett. 34, 175 (2013)
5. G. Liu, A. C. Ahyi, Y. Xu, T. Isaacs-Smith, Y. K. Sharma, S. Dhar et al., “Enhanced Inversion Mobility on 4H-SiC (1120) Using Phosphorus and Nitrogen Interface Passivation, IEEE Elec. Dev. Lett. 34, 181 (2013)
6. Y.K. Sharma, A.C. Ahyi, L.C. Feldman, J.R. Williams et al., "Phosphorus passivation of the SiO2/4H-SiC interface", Solid-State Electron. 68, 103 (2012)
7. R. Thapa, S. Alur, K. Kim, Y. Sharma, M. Park et al., "Biofunctionalized AlGaN/GaN high electron mobility transistor for DNA hybridization detection", Appl. Phys. Lett. 100, 232109 (2012)
8. F. Tong, Kyusang Kim, Y. Wang, R. Thapa, Y. Sharma, M. Park et al, "Growth of ZnO Nanorod Arrays on Flexible Substrates: Effect of Precursor Solution Concentration", ISRN Nanomaterials, vol 2012, Article ID 651468, doi:10.5402/2012/651468
9. Y. Wang, S. Alur, Y. Sharma, M. Park, K.R Evans et al., "Ultra-low leakage and high breakdown Schottky diodes fabricated on free-standing GaN substrate", Semicond. Sci. Technol. 26 (2011)
10. S. Alur, R. Thapa, Y. Wang, Y. Sharma, M. Park et al.," DNA hybridization sensor based on AlGaN/GaN HEMT", P hys. Status Solidi C 8, No. 7–8, 2483 (2011)
11. H. Xu, S. Alur, Y. Wang, An-Jen Cheng, Y.K. Sharma, Yi Zhou et al., "In Situ Raman Analysis of a Bulk GaN-Based Schottky Rectifier Under Operation", J. of Elec. Mat., 39, 2237 (2010)
12. Y. Wang, H. Xu, S. Alur, Y. Sharma, M. Park et al, "In Situ Temperature Measurement of GaN-Based Ultraviolet Light-Emitting Diodes by Micro-Raman Spectroscopy", J. of Elec. Mat., 39, 2449 (2010)

Conference Proceedings

13. Y. K. Sharma, F. Li, S. Thomas, P. Mawby et al, “High-temperature thermal oxidation and N2O passivation of the 3C-SiC/SiO2 interface”, submitted to 56th Electronic Materials Conference (EMC 2014) June 25-27, 2014
14. F. Li, Y. K. Sharma, C. Fisher, P. Mawby et al, “Activation of nitrogen in 3C-SiC/Si with SiO2 as a capping layer”, submitted to 56th Electronic Materials Conference (EMC 2014) June 25-27, 2014
15. F. Li, Y. K. Sharma, P. Mawby et al., "3C-SiC/Si Power Schottky Diode Design & Modelling”, accepted for presentation at Materials Research Society (MRS), San Francisco, USA, April 2014.
16. L. Fan, Y. K. Sharma, P. Mawby et al., " Design and Modelling of a Novel 3C-SiC on Si Lateral Schottky Diode”, accepted for presentation at EPE '14-ECCE Europe, Finland, August 2014.
17. C. A. Fisher, M. R. Jennings, Y. K. Sharma, P. A. Mawby eta al., "On the application of novel high temperature oxidation processes to enhance the performance of high voltage silicon carbide PiN diodes”, accepted for presentation at EPE '14-ECCE Europe, Finland, August 2014.
18. C. A. Fisher, M. R. Jennings, Y. K. Sharma, P. A. Mawby eta al, "Enhanced forward bias operation of 4H-SiC PiN diodes using high temperature oxidation”, Accepted for presentation at Materials Research Society (MRS), San Francisco, USA, April 2014.
19. Y.K. Sharma, S. M. Thomas, M. R. Jennings, P. A. Mawby et al., “Advancements in SiC power devices using novel interface passivation processes”, Physics of Semiconductor Devices Environmental Science and Engineering 2014, pp 47-52 (invited paper)
20. M. R. Jennings, C. A. Fisher, D. Walker, A. Sanchez, A. Pérez-Tomás, D. P. Hamilton, P. M. Gammon, S. E. Burrows, S. M. Thomas, Y. K. Sharma, F. Li and P. A. Mawby, "Physical and electrical characterisation of 3C-SiC and 4H-SiC for power semiconductor device applications”, ”, Physics of Semiconductor Devices Environmental Science and Engineering 2014, pp 929-932 (invited paper)
21. Y.K. Sharma, A.C. Ahyi, Phil Mawby, J.R. Williams et al., “Stable Phosphorus Passivated SiO2/4H-SiC Interface Using Thin Oxides”, Mater. Sci. Forums (2014)
22. Y.K. Sharma, A.C. Ahyi, Phil Mawby, J.R. Williams et al., “Thin PSG Process for 4H-SiC MOSFET”, Mater. Sci. Forums (2014) F
23. M. R. Jennings, C. A. Fisher, D. Walker, A. Sanchez, A. Pérez-Tomás, D. P. Hamilton, P. M. Gammon, S. E. Burrows, S. M. Thomas, Y. K. Sharma, F. Li and P. A. Mawby, "On the Ti3SiC2 metallic phase formation for robust p-type ohmic contacts", presented at the International Conference on Silicon Carbide and Related Materials (ICSCRM), Miyazaki, Japan, 2013.
24. S. M. Thomas, Y. Sharma, M. R. Jennings, P. A. Mawby et al., “Impact of oxidation temperature on the interface trap density in 4H-SiC MOS capacitors” Mater. Sci. Forums (2014)
25. H. Rong, Y. Sharma, M. R. Jennings, P. A. Mawby et al., “4H-SiC Schottky Diode Avalanche Breakdown Voltage Estimation by Simulation and Experimental Analysis”, Mater. Sci. Forums (2014)
26. S. M. Thomas, M. R. Jennings,Y.K. Sharma et al., “The impact of oxygen flow rate on the oxide thickness and interface trap density of 4H-SiC” Mater. Sci. Forums (2014)
27. M. R. Jennings, C. A. Fisher, Y. Sharma, P. A. Mawby et al, “On the Ti3SiC2 Metallic Phase Formation for Robust p-type 4H-SiC Ohmic Contacts”, Mater. Sci. Forums (2014)
28. Y.K. Sharma, A.C. Ahyi, J.R. Williams et al, “SiO2/4H-SiC Interface Passivation Using Phosphorous”, Mater. Sci. Forums (2012)
29. Y. Wang, H. Xu, S. Alur, Y.K. Sharma et al., “Bulk GaN based Schottky diode with high breakdown and low leakage characteristics”, Proceedings of FREEDM Systems Center Annual Conference, 2010
30. Y. Wang, S. Alur, Y.K. Sharma et al., “Determination of Junction Temperature of GaN-based Light Emitting Diodes by Electroluminescence and Micro-Raman Spectroscopy”, Proceedings of CS Mantech Conference, 2009

Presentations

1. Y.K. Sharma, S. M. Thomas, M. R. Jennings, P. A. Mawby et al. at IWPSD, New Delhi, India, 2013 (invited)
2. Y.K. Sharma, A.C. Ahyi, Phil Mawby, J.R. Williams et al. at ICSCRM, Miyazaki, Japan, 2013
3. Y.K. Sharma, A.C. Ahyi, Phil Mawby, J.R. Williams et al. at HeteroSiC-WASMPE, Nice, France, 2013
4. S. M. Thomas, M. R. Jennings, Y.K. Sharma et al. at HeteroSiC-WASMPE, Nice, France, 2013
5. M. R. Jennings, C. A. Fisher, S. M. Thomas, Y. Sharma, P. A. Mawby al. at IWPSD, New Delhi, India, 2013 (invited)
6. Y.K. Sharma, A.C. Ahyi, J.R. Williams, S. Dhar et al. at the 7th Annual Silicon Carbide MOS Army Research Laboratory Workshop, Maryland, USA, 2012
7. Y.K. Sharma, A.C. Ahyi, J.R. Williams et al. at the 6th Annual Silicon Carbide MOS Army Research Laboratory Workshop, Maryland, USA, 2011
8. Y.K. Sharma, A.C. Ahyi, J.R. Williams et al. at ICSCRM, Ohio, USA, 2011
9. R. Thapa, S. Alur, Y.K. Sharma et al. at Workshop on Novel Sampling and Sensing for Improving Food Safety, Georgia, USA, 2011
10. R. Thapa, S.Alur, Y.K. Sharma et al. at the 219th ECS Meeting and SOFC XII, Montreal, Quebec, Canada, 2011
11. S. Alur, Y.K. Sharma, R. Thapa et al. at International Workshop on Nitride Semiconductors, Florida, USA, 2010

Honors and Achievements

USA Patent: Semiconductor Devices Including Polar Insulation Layer Capped By Non-Polar Insulation Layer
US 20140077227 A1 Patent

Work on Phosphorous passivation has been published in Advances in Engineering

Professional Activities

Reviewers for IEEE, Materials Research Society, IET

Student member of APS, MRS and IEEE.