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publications

Refereed papers in primary journals


2013

"A new approach to high resolution, high contrast electron microscopy of macromolecular block copolymer assemblies".M. A. Dyson, A. M. Sanchez, J. P. Patterson, R. K. O'Reilly, J. Sloan and N. R. Wilson. Soft Matter 9 (2013) 3741

"III-V quantum light source and cavity-QED on Silicon". I. J. Luxmoore, R. Toro, O. Del Pozo-Zamudio, N. A. Wasley, E. A. Chekhovich, A. M. Sanchez, R. Beanland, A. M. Fox, M. S. Skolnick, H. Y. Liu and A. I. Tartakovskii. Sci. Reports (2013)

"Long-wavelength photoluminescence from stacked layers of high-quality type-II GaSb/GaAs quantum rings". P. Carrington, R. Young, P. Hodgson, A. M. Sanchez, M. Hayne and A. Krier. Crys. Growth and Design (2013)

"Weak mismatch epitaxy and structural Feedback in graphene growth on copper foil". N. R. Wilson, A. J. Marsden, M. Saghir, C. J. Bromley, R. Schaub, G. Costantini, T. W. White, C. Partridge, A. Barinov, P. Dudin, A. M. Sanchez, J. J. Mudd, M. Walker, G. R. Bell. Nano Research (2013) http://dx.doi.org/10.1007/s12274-013-0285-y

2012

"Influence of charged-dislocation density variations on carrier mobility in heteroepitaxial semiconductors: The case of SnO2 on sapphire". S. K. Vasheghani Farahani, T. D. Veal, A. M. Sanchez, O. Bierwagen, M. E. White, S. Gorfman, P. A. Thomas, J. S. Speck and C. F. McConville. Phys. Rev. B 86 (2012) 245315 http://dx.doi.org/10.1103/PhysRevB.86.245315

"Enhanced infrared photo-response from GaSb/GaAs quantum ring solar cells". P. J. Carrington, M. C. Wagener, J. R. Botha, A. M. Sanchez and A. Krier. Appl. Phys. Lett. 101 (2012) http://dx.doi.org/10.1063/1.4768942

"High resolution nuclear magnetic resonance spectroscopy of highly-strained quantum dot nanostructures". E. A. Chekhovich, K. V. Kavokin, J. Puebla, A. B. Krysa, M. Hopkinson, A. D. Andreev, A. M. Sanchez, R. Beanland, M. S. Skolnick and A. I. Tartakovskii. Nature Nanotechnology 7 (2012) 646 http://dx.doi.org/10.1038/nnano.2012.142

"Quantitative study of the interfacial intermixing and segregation effects across the wetting layer of Ga(As,Sb)-capped InAs quantum dots". E. Luna, A.M. Beltran, A.M. Sanchez and S.I. Molina. Appl. Phys. Lett. 101 (2012) 011601 http://dx.doi.org/10.1063/1.4731790

"Structural and magnetic properties of pulsed laser deposited SrRuO3/CoFe2O4/La2/3Sr1/3MnO3 magnetic oxide heterostructures on SrTiO3(001) and MgO(001)" L. Äkäslompolo, A.M. Sanchez, Q.H. Qin, A. Hakola, T. Kajava and S. van Dijken. Appl. Phys. A online, - (2012). http://www.springerlink.com/content/k9355k9158021238/

“Relaxation dynamics and residual strain in metamorphic AlSb on GaAs”. J.M. Ripalda, A.M. Sanchez, A.G. Taboada, A. Rivera, B. Alen, D. Fuster, Y. Gonzalez, F. Briones, T.J. Rotter and G. Balakrishnan. Appl. Phys. Lett. 100 (2012) 012103. http://dx.doi.org/10.1063/1.3674986

"A simple approach to characterizing block copolymer assemblies: graphene oxide supports for high contrast multi-technique imaging". J. Patterson, A.M. Sanchez, N. Petzetakis, T. Smart, T. Epps, I. Portman, N. Wilson and R. O’Reilly. Soft Matter 8 (2012) 3322. http://dx.doi.org/10.1039/c2sm07040e

"Toward all-oxide magnetic tunneling junctions - SrRuO3/CoFe2O4/La2/3Sr1/3MnO3 trilayers". A.M. Sanchez, L. Äkäslompolo, Q.H. Qin, and S. van Dijken. Crys. Growth and Design 12 (2012) 954. http://dx.doi.org/10.1021/cg201418q

"Optical observation of single-carrier charging in type-II quantum ring ensembles". R.J. Young, E.P. Smakman, A.M. Sanchez, P. Hodgson, P.M. Koenraad, and M. Hayne. Appl. Phys. Lett. 100 (2012) 082104. http://dx.doi.org/10.1063/1.3688037

"Cubic MnSb: Epitaxial growth of a predicted room temperature half-metal". J.D. Aldous, C.W. Burrows, A.M. Sanchez, R. Beanland, I. Maskery, M.K. Bradley, M. dos Santos Dias, J.B. Stauton and G.R. Bell. Phys. Rev. B 85 (2012) 060403(R) http://dx.doi.org/ 10.1103/PhysRevB.85.060403

2011

“Physical Vapor Deposition of Metal Nanoparticles on Chemically Modifies Graphene: Observations on Metal-Graphene interactions". P.A. Pandey, G.R. Bell, J.P. Rourke, A.M. Sanchez, M.D. Elkin, B.J. Hickey and N.R. Wilson. Small 22 (2011) 3202. http://10.1002/smll.201101430

"Structural characterization of GaSb-capped InAs/GaAs quantum dots with a GaAs intermediate layer". Matt. Lett. 65 (2011) 1608. http://10.1016/j.matlet.2011.02.086

"Structural Origin of Enhanced Luminescence Efficiency of Antimony Irradiated InAs quantum dots". Adv. Sci. Lett. 4 (2011) 1

2010

“Structural and optical changes induced by incorporation of antimony”. A.G. Taboada, A.M. Sánchez, A.M. Beltrán, M. Bozkurt, D. Alonso-Álvarez, B. Alén, A. Rivera, J.M. Ripalda, J. M. Llorens, J. Martín-Sánchez, Y. González, J.M. Ulloa, J.M. García, S. I. Molina and P. M. Koenraad. Phys. Rev. B 82 (2010) 235316. http://10.1103/PhysRevB.82.235316

“Reducing carrier escape in the InAs/GaAs quantum dot intermediate band solar cell”. E. Antolin, A. Marti, C.D. Farmer, P.G. Linares, E. Hernandez, A.M. Sánchez, T. Ben, S.I. Molina, C.R. Stanley and A. Luque. J. Appl. Phys. 108 (2010) 064513. http://10.1063/1.3468520

“Photoluminescence of InAs0.926Sb0.063N0.011/InAs multi-quantum wells in the mid-infrared spectral range. M. De la Mare, P.J. Carrington, R. Wheatley, Q. Zhuang, R. Beanland, A.M. Sánchez and A. Krier. J. Phys. D: Appl. Phys. 43 (2010) 345103. http://10.1088/0022-3727/43/34/345103

“Blocking of indium incorporation by antimony in III-V-Sb nanostructures”. A.M. Sánchez, A.M. Beltran, R. Beanland, T. Ben, M.H. Gass, F. De la Pena, M. Walls, A.G. Taboada, J.M. Ripalda and S.I. Molina. Nanotechnology 21 (2010) 145606. http://dx.doi.org/10.1088/0957-4484/21/14/145606

“Anomalous magnetic field effects during pulsed injection metal-organic chemica vapor deposition of magnetite films”. A. Zukova, A. Teiserskis, Y.K. Gun’ko, A.M. Sánchez and S. van Dijken. Appl. Phys. Lett. 96 (2010) 172502. http://dx.doi.org/10.1063/1.3418622

“Electron Tomography of III-V Quantum Dots Using Dark Field 002 Imaging Conditions”. R. Beanland, A.M. Sánchez, J.C. Hernandez-Garrido, D. Wolf and P.A. Midgley. J. Microsc. 237 (2010) 148. http://10.1111/j.1365-2818.2009.03318.x

2009

“Correlation between defect density and current leakage in InAs/GaAs quantum dot-in-well structures”. A.M. Sánchez, R. Beanland, N.F. Hasbullah, M. Hopkinson and J.P.R. David. J. Appl. Phys. 106 (2009) 024502. http://10.1063/1.3168492

“Optical polarization anisotropy of a-plane GaN/AlGaN multiple quantum well structures grown on r-plane sapphire substrates”. T.J. Badcock, P. Dawson M.J. Kappers, C. McAleese, J.L. Hollander, C.F. Johnston, D.V. Sridhara Rao, A.M. Sánchez and C.J. Humphreys. J. Appl. Phys. 105 (2009) 123112. http://10.1063/1.3156688

2008

“Properties of non-polar a-plane GaN/AlGaN quantum wells”. J. Kappers, J.L. Hollander, C.F. Johnston, C. McAleese, D.V.S. Rao, A.M. Sánchez. C.J. Humphreys, T.J. Badcock and P. Dawson. J. Cryst. Growth 310 (2008) 4983. http://10.1016/j.jcrysgro.2008.08.048

“Quantum dots in strained layers –preventing relaxation through the precipitate hardening effect”.R. Beanland, J.P. David and A.M. Sánchez. J. Appl. Phys. 104 (2008) 123502. http://10.1063/1.3028270

“Carrier recombination effects in strain compensated quantum dot stacks embedded in solar cell”. D. Alonso-Alvarez, A. g. Taboada, J.M. Ripalda, B. Alen, Y. Gonzalez, L. Gonzalez, J.M. Garcia, F. Briones, A. Marti, A. Luque, A.M. Sanchez and S.I. Molina. Appl. Phys. Lett. 93 (2008) 123114. http://10.1063/1.2978243

 “Optical properties of GaN/AlGaN quantum wells grown on nonpolar substrates”. T.J. Badcock, P. Dawson, M.J. Kappers, C. MaAleese, J.L. Hollander, C.F. Johnston, D.V. Shidhara Rao, A.M. Sanchez and C.J. Humphreys. Appl. Phys. Lett. 93 (2008) 101901. http://10.1063/1.2971205

“Structural analysis of life tested 1.3micron quantum dot lasers”. R. Beanland, A.M. Sánchez, D. Childs, K. M. Groom, H.Y. Liu, D. J. Mowbray and M. Hopkinson. J. Appl. Phys. 103 (2008) 014913. http://10.1063/1.2827451

2007

“Incorporation of Sb in InAs/GaAs quantum dots”. S.I. Molina, A.M. Sánchez, A.M. Beltran, D.L. Sales, T. Ben, M.F. Chisholm, M. Varela, S.J. Pennycook and P. Galindo. Appl. Phys. Lett. 91 (2007) 263105. http://10.1063/1.2826546

“Ferroelectric parallel-plate capacitors with copper electrodes for high-frequency applications”. T. Riekkinen, T. Mattila, S. van Dijken, A. Lüker, Q. Zhang, P.B. Kirby and A.M. Sánchez. Appl. Phys. Lett. 91 (2007) 252902. http://10.1063/1.2825274

“Strain mapping at atomic scale in high mismatched heterointerfaces”. A.M. Sánchez, J.G. Lozano, D. Gonzalez, R. Garcia, M. Herrera, S. Ruffenach and O. Briot. Advanced Functional Materials 17 (2007) 2588. http://10.1002/adfm.200600813

“Strain Relief Analysis of InN Quantum Dots Grown on GaN”. J.G. Lozano, A.M. Sánchez, R. García, S. Ruffenach, O. Briot and D. González. Nanoscale Res. Lett. 2 (2007) 442. http://10.1007/s11671-007-9080-6

“The Peak Pairs algorithm for strain mapping from HRTEM images”. P.L. Galindo, S. Kret, A.M. Sánchez, J.Y. Laval, A. Yanez, J. Pizarro, E. Guerrero, T. Ben and S.I. Molina. Ultramicroscopy 107 (2007) 1186. http://10.1016/j.ultramic.2007.01.019

“Configuration of the misfit dislocation networks in uncapped and capped InN quantum dots”. J. G. Lozano, A.M. Sánchez, R. Garcia, D. Gonzalez, M. Herrera, N.D. Browining, S. Ruffenach and O. Briot. Appl. Phys. Lett. 91 (2007) 071915.http://10.1063/1.2770776

“Structural, Magnetic and transport properties of Fe3O4/Si(111) and Fe3O4/Si(001)”. C. Boothman, A.M. Sánchez and S. van Dijken. J. Appl. Phys. 101 (2007) 123903. http://10.1063/1.2745290

“A TEM study of the evolution of InAs/GaAs self-assembled dots on (311)B GaAs with growth interruption”. D.L. Sales, A.M. Sánchez, R. Beanland, M. Henini and S.I. Molina. Semiconductor Science and Technology 22 (2007) 168. http://10.1088/0268-1242/22/2/029

2006

“Direct experimental evidence of metastable epitaxial zinc-blence MgS”. A.M. Sánchez, J. Olvera, T. Ben, S.I. Molina, J. Morrod and K. Prior. Appl. Phys. Lett. 89 (2006) 121907.http://10.1063/1.2353826

"Structural characterization of InN quantum dots grown by Metalorganic Vapour Phase Epitaxy”. J.G. Lozano, D. Gonzalez, A.M. Sánchez, D. Araujo, S. Ruffenach, O. Briot and R. Garcia. Phys. Stat. Sol. (c) 3 (2006) 1687

“Effect of growing temperature on AlGaInN layers: a TEM analysis”. D. Mendez, M. Albrecht, E. Monroy, D. Jalabert, H.P. Strunk, A.M. Sánchez and R. Garcia. Phys. Stat. Sol. (c) 3 (2006) 1400

“Quantitative Strain Mapping Applied to Aberration Corrected HAADF images”. A.M. Sánchez, P.L. Galindo, S.Kret, M. Fake, R. Beanland and P. Goodhew.Microsc. And Microanal. 12 (2006) 285. http://10.1017/S1431927606060363

“Misfit relaxation of InN quantum-dots: the effect of the GaN capping layer”. J.G. Lozano, A.M. Sánchez, R. García, R. Ruffenach, O. Briot and D. González. Appl. Phys. Lett. 88 (2006) 151913. http://10.1063/1.2195642

“An approach to the systematic distortion correction in aberration-corrected HAADF images”. A.M. Sánchez, P.L. Galindo, S.Kret, M. Fake, R. Beanland and P. Goodhew. J. Microsc. 221 (2006). http://10.1111/j.1365-2818.2006.01533.x

“Nanometric-scale strain measurements in semiconductors: an approach using the plasmon peak in electron energy loss spectra". A.M. Sánchez, R. Beanland, A.J. Papworth, M.H. Gass, P.J. Goodhew and R. Garcia. Appl. Phys. Lett. 88 (2006) 051917. http://10.1063/1.2169904

2005

“Room temperature emission at 1.6 mm from InGaAs quantum dots capped with GaAsSb”. J.M. Ripalda, D. Granados, Y. González, A.M. Sánchez, S.I. Molina and J.M. García. Appl. Phys. Lett. 87 (2005) 202108. http://10.1063/1.2130529

“Nucleation of InN quantum dots on GaN by metalorganic vapour phase epitaxy”. J.G. Lozano, A.M. Sánchez, R. García, D. González, D. Araujo, R. Ruffenach and O. Briot. Appl. Phys. Lett. 87 (2005) 263104. http://10.1063/1.2152110

“Interfacial steps, dislocations and inversion domain boundaries in the GaN/AlN(Si (0001)/(111) epitaxial system”. G. P. Dimitrakopoulos, A.M. Sánchez, Ph. Komninou, Th. Kehagias, Th. Karakostas, G. Nouet and P. Ruterana. Phys. Stat. Sol. (b) 242 (2005) 1617. http://10.1002/pssb.200440058

“Mapping quantum dot-in-well structures on the nanoscale using the plasmon peak in electron energy loss spectra” . A.M. Sánchez, R. Beanland, M. Gass, A.J. Papworth, P.J. Goodhew and M. Hopkinson. Phys. Rev. B 72 (2005) 075339. http://10.1103/PhysRevB.72.075339

“Mechanism for pinhole formation in GaN/AlN/Si(111) MBE layers from steps at the substrate surface”. A.M. Sánchez, G. P. Dimitrakopoulos and P. Ruterana. Appl. Phys. Lett. 86 (2005) 011917. http://10.1063/1.1845599

“Disconnections and Inversion Domain Formation in GaN/AlN Heteroepitaxy on (111)Si”. G. P. Dimitrakopoulos, A.M. Sánchez, Ph. Komninou, P. Ruterana, G. Nouet, Th. Kehagias and Th. Karakostas. Phys. Stat. Sol. (c) 2 (2005) 2500

“V-defects and dislocations in INGaN/GaN heterostructures". A.M. Sánchez, M. Gass, A.J. Papworth, P.J. Goodhew, P. Singh, P. Ruterana, H.K. Cho, R.K. Choi and H.J. Lee. Thin Solid Films 479 (2005) 316. http://10.1016/j.tsf.2004.11.207


Book Chapters


“Strain relief and nucleation mechanisms of InN quantum dots”. J.G. Lozano, A.M. Sánchez, R. Garcia, S. Ruffenach, O. Briot and D. Gonzalez. Quantum dots: Research, Technology and Applications (2009) Ed. Nova Publishers, 269-300

“Extended defects in wurtzite GaN layers: Atomic structure, formation and interaction mechanisms” P. Ruterana, A.M. Sánchez and G. Nouet. Nitride Semiconductors. Handbook on Materials and Devices (2003) WiILEY-VCH, 379-438