• Ortiz Gonzalez, Jose Angel, Alatise, Olayiwola M., 2020. Impact of BTI induced threshold voltage shifts in shoot-through currents from crosstalk in SiC MOSFETs. IEEE Transactions on Power Electronics
• Agbo, S. N., Ortiz Gonzalez, Jose Angel, Wu, R., Jahdi, S., Alatise, Olayiwola M., 2020. UIS performance and ruggedness of stand-alone and cascode SiC JFETs. Microelectronics Reliability
• Ortiz Gonzalez, Jose Angel, Alatise, Olayiwola M., 2020. Bias temperature instability and junction temperature measurement using electrical parameters in SiC power MOSFETs. IEEE Transactions on Industry Applications
• Ortiz Gonzalez, Jose Angel, Wu, Robert, Jahdi, S., Alatise, Olayiwola M., 2020. Performance and reliability review of 650V and 900V silicon and SiC devices : MOSFETs, cascode JFETs and IGBTs. IEEE Transactions on Industrial Electronics, 67 (9), pp. 7375-7385
• Agbo, S. N., Ortiz-Gonzalez, Jose Angel, Alatise, Olayiwola M., 2020. Performance of SiC cascode JFETs under single and repetitive avalanche pulses. Microelectronics Reliability, 110
• Ortiz Gonzalez, Jose Angel, Alatise, Olayiwola M., 2019. A novel non-intrusive technique for BTI characterization in SiC MOSFETs. IEEE Transactions on Power Electronics, 34 (6), pp. 5737-5747
• Wu, Ruizhu, Gonzalez, Jose Ortiz, Davletzhanova, Zarina, Mawby, Philip. A., Alatise, Olayiwola M., 2019. The potential of SiC Cascode JFETs in electric vehicle traction inverters. IEEE Transactions on Transportation Electrification, 5 (4), pp. 1349-1359
• Ortiz-Gonzalez, Jose Angel, Wu, Ruizhu, Nereus Agbo, Sunday, Alatise, Olayiwola M., 2019. Robustness and reliability review of Si and SiC FET devices for more-electric-aircraft applications. Microelectronics Reliability, 100-101
• Gonzalez, Jose Ortiz, Hedayati, M., Jahdi, S., Stark , B. H., Alatise, Olayiwola M., 2019. Dynamic characterization of SiC and GaN devices with BTI stresses. Microelectronics Reliability, 100-101
• Gonzalez, Jose Ortiz, Alatise, Olayiwola M., Mawby, Philip. A., 2019. Novel method for evaluation of negative bias temperature instability of SiC MOSFETs. Materials Science Forum, 963, pp. 749-752
• Ortiz Gonzalez, Jose Angel, Alatise, Olayiwola M., 2018. Bias temperature instability and condition monitoring in SiC power MOSFETs. Microelectronics Reliability, 88-90, pp. 557-562
• Lai, Wei, Chen, Mingyou, Ran, Li, Xu, Shengyou, Jiang, Nan, Wang, Xuemei, Alatise, Olayiwola M., Mawby, P. A., 2017. Experimental investigations on the effects of narrow junction temperature cycles on die-attach solder layer in an IGBT module. IEEE Transactions on Power Electronics, 32 (2), pp. 1431-1441
• Hu, Borong, Ortiz Gonzalez, Jose Angel, Ran, Li, Ren, Hai, Zeng, Zheng, Lai, Wei, Gao, Bing, Alatise, Olayiwola M., Lu, Hua, Bailey, Christopher, Mawby, P. A. (Philip A.), 2017. Failure and reliability analysis of a SiC power module based on stress comparison to a Si device. IEEE Transactions on Device and Materials Reliability, 17 (4), pp. 727-737
• Ortiz Gonzalez, Jose Angel, Alatise, Olayiwola M., 2017. Impact of the gate driver voltage on temperature sensitive electrical parameters for condition monitoring of SiC power MOSFETsR. Microelectronics Reliability, 76-77, pp. 470-474
• Ortiz Gonzalez, Jose Angel, Alatise, Olayiwola M., Aliyu, Attahir, Rajaguru, Pushparajah, Castellazzi, Alberto, Ran, Li, Mawby, P. A. (Philip A.), Bailey, Chris, 2017. Evaluation of SiC schottky diodes using pressure contacts. IEEE Transactions on Industrial Electronics, 64 (10), pp. 8213-8223
• Ortiz Gonzalez, Jose Angel, Alatise, Olayiwola M., Hu, Ji, Ran, Li, Mawby, P. A. (Philip A.), 2017. An investigation of temperature sensitive electrical parameters for SiC power MOSFETs. IEEE Transactions on Power Electronics, 32 (10), pp. 7954-7966
• Ortiz Gonzalez, Jose Angel, Aliyu, A. M., Alatise, Olayiwola M., Castellazzi, A., Ran, Li, Mawby, P. A. (Philip A.), 2016. Development and characterisation of pressed packaging solutions for high-temperature high-reliability SiC power modules. Microelectronics Reliability, 64, pp. 434-439
• Tang, Yuan, Ran, Li, Alatise, Olayiwola M., Mawby, P. A., 2016. Improved testing capability of the model assisted testing scheme for modular multilevel converter. IEEE Transactions on Power Electronics, 31 (11), pp. 7823-7836
• Lai, Wei, Mawby, P. A. (Philip A.), Qin, Han, Alatise, Olayiwola M., Xu, Shengyou, Chen, Minyou, Ran, Li, 2016. Study on the lifetime characteristics of power modules under power cycling conditions. IET Power Electronics, 9 (5), pp. 1045-1052
• Tang, Yuan, Ran, Li, Alatise, Olayiwola M., Mawby, P. A. (Philip A.), 2016. Capacitor selection for modular multilevel converter. IEEE Transactions on Industry Applications, 52 (4), pp. 3279-3293
• Lai, Wei, Chen, Mingyou, Ran, Li, Alatise, Olayiwola M., Xu, Shengyou, Mawby, P. A. (Philip A.), 2016. Low ?Tj stress cycle effects in IGBT power module die-attach lifetime modelling. IEEE Transactions on Power Electronics, 31 (9), pp. 6575-6585
• Hu, Ji, Alatise, Olayiwola M., Ortiz Gonzalez, Jose Angel, Alexakis, Petros, Ran, Li, Mawby, P. A., 2016. Robustness and balancing of parallel connected power devices : SiC vs. CoolMOS. IEEE Transactions on Industrial Electronics, 63 (4), pp. 2092-2102
• Tang, Yuan, Ran, Li, Alatise, Olayiwola M., Mawby, P. A. (Philip A.), 2016. A model assisted testing scheme for modular multilevel converter. IEEE Transactions on Power Electronics, 31 (1), pp. 165-176
• Jahdi, Saeed, Alatise, Olayiwola M., Ran, Li, Mawby, P. A. (Philip A.), 2015. Accurate analytical modeling for switching energy of PiN diodes reverse recovery. IEEE Transactions on Industrial Electronics, 62 (3), pp. 1461-1470
• Jahdi, Saeed, Alatise, Olayiwola M., Ran, Li, Mawby, P. A. (Philip A.), 2015. Analytical modeling of switching energy of silicon carbide Schottky diodes as functions of dIDS/dt and temperature. IEEE Transactions on Power Electronics, 30 (6), pp. 3345-3355
• Jahdi, Saeed, Alatise, Olayiwola M., Bonyadi, Roozbeh, Alexakis, Petros, Fisher, Craig A., Ortiz Gonzalez, Jose Angel, Ran, Li, Mawby, P. A. (Philip A.), 2015. An analysis of the switching performance and robustness of power MOSFETs body diodes : a technology evaluation. IEEE Transactions on Power Electronics, 30 (5), pp. 2383-2394
• Bonyadi, Roozbeh, Alatise, Olayiwola M., Jahdi, Saeed, Hu, Ji, Ortiz Gonzalez, Jose Angel, Ran, Li, Mawby, Philip A., 2015. Compact electro-thermal reliability modelling and experimental characterisation of bipolar latch-up in SiC and CoolMOS Power MOSFETs. IEEE Transactions on Power Electronics
• Jahdi, Saeed, Alatise, Olayiwola M., Ortiz Gonzalez, Jose Angel, Bonyadi, Roozbeh, Ran, Li, Mawby, P. A. (Philip A.), 2015. Temperature and switching rate dependence of crosstalk in Si-IGBT and SiC power modules. IEEE Transactions on Industrial Electronics, 63 (2), pp. 849-863
• Jahdi, Saeed, Alatise, Olayiwola M., Alexakis, Petros, Ran, Li, Mawby, P. A. (Philip A.), 2015. The impact of temperature and switching rate on the dynamic characteristics of silicon carbide schottky barrier diodes and MOSFETs. IEEE Transactions on Industrial Electronics, 62 (1), pp. 163-171
• Bonyadi, Roozbeh, Alatise, Olayiwola M., Jahdi, Saeed, Hu, Ji, Ortiz Gonzalez, Jose Angel, Ran, Li, Mawby, P. A., 2015. Compact electrothermal reliability modeling and experimental characterization of bipolar latchup in SiC and CoolMOS power MOSFETs. IEEE Transactions on Power Electronics, 30 (12), pp. 6978-6992
• Hu, Ji, Alatise, Olayiwola M., Ortiz Gonzalez, Jose Angel, Bonyadi, Roozbeh, Ran, Li, Mawby, P. A., 2015. The effect of electrothermal nonuniformities on parallel connected SiC power devices under unclamped and clamped inductive switching. IEEE Transactions on Power Electronics, 31 (6), pp. 4526-4535
• Jahdi, Saeed, Alatise, Olayiwola M., Fisher, Craig A., Ran, Li, Mawby, P. A. (Philip A.), 2014. An evaluation of silicon carbide unipolar technologies for electric vehicle drive-trains. IEEE Journal of Emerging and Selected Topics in Power Electronics, 2 (3), pp. 517-528
• Alexakis, Petros, Alatise, Olayiwola M., Hu, Ji, Jahdi, Saeed, Ran, Li, Mawby, P. A., 2014. Improved electrothermal ruggedness in SiC MOSFETs compared with silicon IGBTs. IEEE Transactions on Electron Devices, 61 (7), pp. 2278-2286
• Jahdi, Saeed, Alatise, Olayiwola M., Mawby, P. A. (Philip A.), 2014. Temperature and dIDS/dt dependence of the switching energy of SiC schottky diodes in clamped inductive switching applications. Materials Science Forum, 778-780, pp. 816-819
• Alatise, Olayiwola M., Parker-Allotey, Nii-Adotei, Mawby, P. A. (Philip A.), 2012. Modeling the electrothermal stability of power MOSFETs during switching transients. IEEE Electron Device Letters, 33 (7), pp. 1039-1041
• Alatise, Olayiwola M., Parker-Allotey, Nii-Adotei, Hamilton, Dean P., Mawby, P. A. (Philip A.), 2012. The impact of parasitic inductance on the performance of silicon-carbide Schottky barrier diodes. IEEE Transactions on Power Electronics, Vol.27 (No.8), pp. 3826-3833
• Alatise, Olayiwola M., Parker-Allotey, Nii-Adotei, Jennings, M. R., Mawby, P. A. (Philip A.), Kennedy, Ian, Petkos, George, 2011. Modeling the impact of the trench depth on the gate-drain capacitance in power MOSFETs. IEEE Electron Device Letters, Vol.32 (No.9), pp. 1269-1271
• Alatise, Olayiwola M., Kennedy, Ian, Petkos, George, Koh, Adrian, 2011. Reliability of repetitively avalanched wire-bonded low-voltage discrete power trench n-MOSFETs. IEEE Transactions on Device and Materials Reliability, Vol.11 (No.1), pp. 157-163
• Alatise, Olayiwola M., Olsen, Sarah H., O'Neill, Anthony G., Majhi, Prashant, 2010. Improved self-gain in deep submicrometer strained silicon-germanium pMOSFETs with HfSiOx/TiSiN gate stacks. Microelectronic Engineering, Vol.87 (No.11), pp. 2196-2199
• Alatise, Olayiwola M., Olsen, Sarah H., O'Neill, Anthony G., 2010. Linearity and mobility degradation in strained Si MOSFETs with thin gate dielectrics. Solid-State Electronics, Vol.54 (No.6), pp. 628-634
• Alatise, Olayiwola M., Kennedy, Ian, Petkos, George, Heppenstall, Keith, Khan, Khalid Saeed, Parkin, Jim, Koh, Adrian, Rutter, Philip, 2010. The impact of repetitive unclamped inductive switching on the electrical parameters of low-voltage trench power nMOSFETs. IEEE Transactions on Electron Devices, Vol.57 (No.7), pp. 1651-1658
• Alatise, Olayiwola M., Kwa, Kelvin S. K., Olsen, Sarah H., O'Neill, Anthony G., 2010. The impact of self-heating and SiGe strain-relaxed buffer thickness on the analog performance of strained Si nMOSFETs. Solid-State Electronics, Vol.54 (No.3), pp. 327-335
• Alatise, Olayiwola M., Kennedy, Ian, Petkos, George, Heppenstall, Keith, Parkin, Jim, Khan, Khalid Saeed, Koh, Adrian, Rutter, Philip, 2010. The impact of trench depth on the reliability of repetitively avalanched low-Voltage discrete power trench nMOSFETs. IEEE Electron Device Letters, Vol.31 (No.7), pp. 713-715
• Alatise, Olayiwola M., Kennedy, Ian, Petkos, George, Khan, Khalid Saeed, Koh, Adrian, Rutter, Philip, 2010. Understanding linear-mode robustness in low-voltage trench power MOSFETs. IEEE Transactions on Device and Materials Reliability, Vol.10 (No.1), pp. 123-129
• Alatise, Olayiwola M., Kwa, Kelvin S. K., Olsen, Sarah H., O'Neill, Anthony G., 2009. Improved analog performance in strained-Si MOSFETs using the thickness of the silicon-germanium strain-relaxed buffer as a design parameter. IEEE Transactions on Electron Devices, Vol.56 (No.12), pp. 3041-3048
• Alatise, Olayiwola M., Olsen, Sarah H., Cowern, Nicholas E. B., O'Neill, Anthony G., Majhi, Prashant, 2009. Performance enhancements in scaled strained-SiGe pMOSFETs with HfSiOx/TiSiN gate stacks. IEEE Transactions on Electron Devices, Vol.56 (No.10), pp. 2277-2284
• Olsen, Sarah H., Dobrosz, Peter, Agaiby, Rouzet M.B., Tsang, Yuk Lun, Alatise, Olayiwola M., Bull, Steve J., O?Neill, Anthony G., Moselund, Kirsten E., Ionescu, Adrian M., Majhi, Prashant, 2008. Nanoscale strain characterisation for ultimate CMOS and beyond. Materials Science in Semiconductor Processing, Vol.11 (No.5-6), pp. 271-278