Dr Nicholas Grant - Journal Publications

'Renz, Arne Benjamin, 'Vavasour, Oliver J., 'Gammon, Peter M., 'Li, Fan, 'Dai, Tianxiang, 'Baker, Guy, 'Grant, Nicholas E., 'Murphy, John D., 'Mawby, P. A. (Philip A.), 'Shah, Vishal, 'Gott, James A., 2022. '(Invited, Digital Presentation) Improved reliability of 4H-SiC metal-oxide-semiconductor devices utilising atomic layer deposited layers with enhanced interface quality. ECS Transactions, 108 (2), pp. 43-49
Pain, Sophie L., Grant, Nicholas E., Murphy, John D., 2022. Room temperature enhancement of electronic materials by superacid analogues. ACS Nano
Niewelt, T., Steinhauser, B., Richter, A., Veith-Wolf, B., Fell, A., Hammann, B., Grant, Nicholas E., Black, L., Tang, J., Youssef, A., Murphy, J. D., Schmidt, J., Schubert, M. C., Glunz, S. W., 2022. Reassessment of the intrinsic bulk recombination in crystalline silicon. Solar Energy Materials and Solar Cells, 235
'Renz, A. B., 'Vavasour, Oliver J., 'Gammon, Peter M., 'Li, Fan, 'Dai, Tianxiang, 'Baker, G. W. C., 'Grant, Nicholas E., 'Murphy, John D., 'Mawby, Philip A., 'Shah, Vishal, 2022. 'The improved reliability performance of post-deposition annealed ALD-SiO2. Materials Science Forum, 1062, pp. 325-329
'Grant, Nicholas E., 'Pain, Sophie, 'White, Joshua T., 'Walker, Marc, 'Prokes, Ivan, 'Murphy, John D., 2022. 'Enhanced surface passivation of sub-nanometer silicon dioxide films by superacidic treatments. ACS Applied Energy Materials, 5 (2), pp. 1542-1550
'Murphy, J. D., 'Grant, N. E., 'Pain, S. L., 'Niewelt, T., 'Wratten, A., 'Khorani, E., 'Markevich, V. P., 'Peaker, A. R., 'Altermatt, P. P., 'Lord, J. S., 'Yokoyama, K., 2022. 'Carrier lifetimes in high-lifetime silicon wafers and solar cells measured by photoexcited muon spin spectroscopy. Journal of Applied Physics, 132 (6)
'Pain, Sophie L., 'Khorani, Edris, 'Niewelt, Tim, 'Wratten, Ailish, 'Paez Fajardo, Galo J., 'Winfield, Ben, 'Bonilla, Ruy S., 'Walker, Marc, 'Piper, Louis F. J., 'Grant, Nicholas E., 'Murphy, John D., 2022. 'Electronic characteristics of ultra-thin passivation layers for silicon photovoltaics. Advanced Materials Interfaces, 9 (28)
Renz, A. B., Li, F., Vavasour, Oliver J., Gammon, P. M., Dai, T., Baker, G. W. C., Via, F. La, Zielinski, M. (Marcin), Zhang, L., Grant, Nicholas E., Murphy, John D., Mawby, P. A. (Philip A.), Jennings, M. R. (Michael R.), Shah, V. A., 2021. Initial investigations into the MOS interface of freestanding 3C-SiC layers for device applications. Semiconductor Science and Technology, 36 (5)
Renz, A. B., Vavasour, Oliver J., Gammon, P. M., Li, Fan, Dai, Tianxiang, Antoniou, M., Baker, G. W. C., Bashar, E., Grant, N. E, Murphy, J. D., Mawby, P. A., Shah, V. A., 2021. The improvement of atomic layer deposited SiO2/4H-SiC interfaces via a high temperature forming gas anneal. Materials Science in Semiconductor Processing, 122
'Grant, Nicholas E., 'Altermat, Pietro P., 'Niewelt, Tim, 'Post, Regina, 'Kwapil, Wolfram, 'Schubert, Martin C., 'Murphy, John D., 2021. 'Gallium-doped silicon for high-efficiency commercial passivated emitter and rear solar cells. Solar RRL, 5
Zhu, Yan, Rougieux, Fiacre, Grant, Nicholas E., de Guzman, Joyce Ann T., Murphy, John D., Markevich, Vladimir P., Coletti, Gianluca, Peaker, Anthony R., Hameiri, Ziv, 2021. Electrical characterization of thermally activated defects in n-type float-zone silicon. IEEE Journal of Photovoltaics, 11 (1), pp. 26-35
'Grant, Nicholas E., 'Pointon, Alex I., 'Jefferies, Richard, 'Hiller, Daniel, 'Han, Yisong, 'Beanland, Richard, 'Walker, Marc, 'Murphy, John D., 2020. 'Atomic level termination for passivation and functionalisation of silicon surfaces. Nanoscale, 12, pp. 17332-17341
Hiller, Daniel, Markevich, Vladimir P., de Guzman, Joyce Ann T., König, Dirk, Prucnal, Slawomir, Bock, Wolfgang, Julin, Jaakko, Peaker, Anthony R., Macdonald, Daniel, Grant, Nicholas E., Murphy, John D., 2020. Kinetics of bulk lifetime degradation in Float-Zone (FZ) silicon : fast activation and annihilation of grown-in defects and the role of hydrogen vs light. Physica Status Solidi (a), 217 (17)
'Pointon, Alex I., 'Grant, Nicholas E., 'Pain, Sophie, 'White, Joshua, 'Murphy, John D., 2020. 'Sub-2 cm/s passivation of silicon surfaces by aprotic solutions. Applied Physics Letters, 116
'Grant, Nicholas E., 'Scowcroft, Jennifer R., 'Pointon, A. I., 'Al-Amin, Mohammad, 'Altermatt, Pietro P., 'Murphy, John D., 2020. 'Lifetime instabilities in gallium doped monocrystalline PERC silicon solar cells. Solar Energy Materials and Solar Cells, 206
Kho, Teng Choon, Fong, Kean, McIntosh, Keith, Franklin, Evan, Grant, Nicholas E., Stocks, Matthew, Phang, Sieu Pheng, Wan, Yimao, Wang, Er-Chien, Vora, Kaushal, Ngwe, Zin, Blakers, Andrew, 2019. Exceptional silicon surface passivation by an ONO dielectric stack. Solar Energy Materials and Solar Cells, 189, pp. 245-253
Zhu, Yan, Rougieux, Fiacre, Grant, Nicholas E., Mullins, Jack, De Guzman, Joyce Ann, Murphy, John D., Markevich, Vladimir P., Coletti, Gianluca, Peaker, Anthony R., Hameiri, Ziv, 2019. New insights into the thermally activated defects in n-type float-zone silicon. AIP Conference Proceedings, 2147 (1)
Pointon, A. I., Grant, Nicholas E., Bonilla, R. S., Wheeler-Jones, Evé, Walker, Marc, Wilshaw, P. R., Dancer, Claire E. J., Murphy, John D., 2019. Exceptional surface passivation arising from bis(trifluoromethanesulfonyl)-based solutions. ACS Applied Electronic Materials, 1 (7), pp. 1322-1329
Murphy, John D., Pointon, A. I., Grant, Nicholas E., Shah, V. A., Myronov, Maksym, Voronkov, Vladimir V., Falster, R. J., 2019. Minority carrier lifetime in indium doped silicon for photovoltaics. Progress in Photovoltaics : Research and Applications, 27 (10), pp. 844-855
Al-Amin, Mohammad, Grant, Nicholas E., Pointon, A. I., Murphy, J. D., 2019. Iodine-ethanol surface passivation for measurement of millisecond carrier lifetimes in silicon wafers with different crystallographic orientations. Physica Status Solidi A, 216 (17)
'Grant, Nicholas E., 'Kho, T. C., 'Fong, K. C., 'Franklin, E., 'McIntosh, K. R., 'Stocks, M., 'Wan, Y., 'Wang, Er-Chien, 'Zin, N. S., 'Murphy, John D., 'Blakers, A., 2019. 'Anodic oxidations : excellent process durability and surface passivation for high efficiency silicon solar cells. Solar Energy Materials and Solar Cells, 203
Pointon, A. I., Grant, Nicholas E., Wheeler-Jones, Evé, Altermatt, P. P., Murphy, J. D., 2018. Superacid-derived surface passivation for measurement of ultra-long lifetimes in silicon photovoltaic materials. Solar Energy Materials and Solar Cells, 183, pp. 164-172
Niewelt, T., Richter, A., Kho, T. C., Grant, Nicholas E., Bonilla, R. S., Steinhauser, B., Polzin, J.-I., Feldmann, F., Hermle, M., Murphy, John D., Phang, S. P., Kwapil, W., Schubert, M. C., 2018. Taking monocrystalline silicon to the ultimate lifetime limit. Solar Energy Materials and Solar Cells, 185, pp. 252-259
Rahman, T., To, A., Pollard, M. E., Grant, Nicholas E., Colwell, J., Payne, D. N. R., Murphy, John D., Bagnall, D. M., Hoex, B., Boden, S. A., 2018. Minimising bulk lifetime degradation during the processing of interdigitated back contact silicon solar cell. Progress in Photovoltaics, 26 (1), pp. 38-47
Pointon, A. I., Grant, Nicholas E., Wheeler-Jones, E.C., Altermatt, P.P., Murphy, John D., 2018. Superacid-derived surface passivation for measurement of ultra-long lifetimes in silicon photovoltaic materials. Solar Energy Materials and Solar Cells, 183, pp. 164-172
Mullins, Jack, Markevich, Vladimir P., Vaqueiro-Contreras, Michelle, Grant, Nicholas E., Jensen, Leif, Jablonski, Jaroslaw, Murphy, John D., Halsall, Matthew P., Peaker, Anthony R., 2018. Thermally activated defects in float zone silicon : effect of nitrogen on the introduction of deep level states. Journal of Applied Physics, 124 (3)
Grant, Nicholas E., Niewelt, Tim, Wilson, Neil R., Wheeler-Jones, Evé, Bullock, James, Al-Amin, Mohammad, Schubert, Martin C., van Veen, André C., Javey, Ali, Murphy, John D., 2017. Superacid-treated silicon surfaces : extending the limit of carrier lifetime for photovoltaic applications. IEEE Journal of Photovoltaics, 7 (6), pp. 1574-1583
Grant, Nicholas E., Murphy, John D., 2017. Temporary surface passivation for characterisation of bulk defects in silicon : a review. Physica Status Solidi Rapid Research Letters, 11 (11)
Al-Amin, Mohammad, Grant, Nicholas E., Murphy, John D., 2017. Low-temperature saw damage gettering to improve minority carrier lifetime in multicrystalline silicon. Physica Status Solidi Rapid Research Letters, 11 (10)
Niewelt, T., Selinger, M., Grant, Nicholas E., Kwapil, W. M., Murphy, John D., Schubert, M. C., 2017. Light-induced activation and deactivation of bulk defects in boron-doped float-zone silicon. Journal of Applied Physics, 121 (18)