Journal Publications

2017

• P. M. Gammon, C. W. Chan, F. Li, F. Gity, T. Trajkovic, V. Pathirana, D. Flandre, V. Kilchytska
  Development, characterisation and simulation of wafer bonded Si-on-SiC substrates
  (OPEN ACCESS) Materials Science in Semiconductor Processing, In Press, (2017)

• C. W. Chan, F. Li, A. Sanchez, P. A. Mawby, P. M. Gammon
  Comparative Study of RESURF Si/SiC LDMOSFETs for High-Temperature Applications Using TCAD Modeling
  (OPEN ACCESS) IEEE Trans. on Elec. Devices, vol. 64, no. 9, pp. 3713-3718, (2017)

2016

• C. W. Chan, P. A. Mawby, and P. M. Gammon
  Analysis of linear-doped Si/SiC power LDMOSFETs based on device simulation
  (OPEN ACCESS) IEEE Trans. on Elec. Devices, vol. 63, no. 6, pp. 2442-2448, (2016)

• F. Li, Y. Sharma, D. Walker, S. Hindmarsh, M. R. Jennings, D. Martin, C. A. Fisher, P. M. Gammon, A. Pérez-Tomás, P. Mawby
  3C-SiC transistor with Ohmic contacts defined at room temperature
  IEEE Electron Device Letters, vol. 37, no. 9, pp. 1189-1192, (2016)

2015

• A. Pérez-Tomás, G. Catalàn, A. Fontserè, V. Iglesias, H. Chen, P. M. Gammon, M. Jennings, M. Thomas, C. Fisher, and Y. Sharma
  Nanoscale conductive pattern of the homoepitaxial AlGaN/GaN transistor
  Nanotechnology, vol. 26, p. 115203, (2015)

2014

• E. Donchev, J. S. Pang, P. M. Gammon, A. Centeno, F. Xie, P. K. Petrov, J. D. Breeze, M. P. Ryan, D. J. Riley and N. McN. Alford
  The rectenna device: From theory to practice (a review)
  (OPEN ACCESS) MRS Energy & Sustainability, 1, pp. 1 (2014)

• C. A. Fisher, M. R. Jennings, Y. K. Sharma, D. P. Hamilton, P. M. Gammon, A. Perez-Tomas, S. M. Thomas, S. E. Burrows, and P. A. Mawby
  Improved performance of 4H-SiC PiN diodes using a novel combined high temperature oxidation and annealing process
  Semiconductor Manufacturing, IEEE Transactions on, vol. 27, pp. 443-451, (2014)

• M. R. Jennings, C. A. Fisher, S. M. Thomas, Y. Sharma, D. Walker, A. Sanchez, A. Pérez-Tomás, D. P. Hamilton, P. M. Gammon, S. E. Burrows, F. Li, P. A. Mawby
  Physical and Electrical Characterisation of 3C-SiC and 4H-SiC for Power Semiconductor Device Applications
  Physics of Semiconductor Devices pp. 929-932 (2014)

2013

• P. M. Gammon, A. Pérez-Tomás, V. A. Shah, O. Vavasour, E. Donchev, J. S. Pang, M. Myronov, C. A. Fisher, M. R. Jennings, D. R. Leadley, and P. A. Mawby
  Modelling the inhomogeneous SiC Schottky interface
  J. Appl. Phys. 114, 223704 (2013)

• A. Pérez-Tomás, A. Fontserè, M. R. Jennings, P. M. Gammon
  Modeling the effect of thin gate insulators (SiO2, SiN, Al2O3 and HfO2) on AlGaN/GaN HEMT forward characteristics grown on Si, sapphire and SiC
  Materials Science in Semiconductor Processing, 16, 1336 (2013)
• A. Pérez-Tomás, A. Fontserè, M. Placidi, M. R. Jennings, P. M. Gammon
  Modelling the metal–semiconductor band structure in implanted ohmic contacts to GaN and SiC
  Modelling Simul. Mater. Sci. Eng., 21, 035004 (2013)

• A. Pérez-Tomás, A. Fontsere, S. Sánchez, M. R. Jennings, P. M. Gammon, Y. Cordier
  Gate traps inducing band-bending fluctuations on AlGaN/GaN heterojunction transistors
  Appl. Phys. Lett. 102, 023511 (2013)

2012

• P. M. Gammon, E. Donchev, A. Perez-Tomas, V. A. Shah, J. S. Pang, P. K. Petrov, M. R. Jennings, C. A. Fisher, P. A. Mawby, D. R. Leadley, and N. McN. Alford
  A study of temperature-related non-linearity at the metal-silicon interface
  J. Appl. Phys. 112, 114513 (2012)

• A. Fontsere, A. Perez-Tomas, M. Placidi, J. Llobet, N. Baron, S. Chenot, Y. Cordier, J. C. Moreno, M. R. Jennings, P. M. Gammon, C. A. Fisher, V. Iglesias, M. Porti, A. Bayerl, M. Lanza and M. Nafria.
  Nanoscale investigation of AlGaN/GaN-on-Si high electron mobility transistors
  Nanotechnology, 23, 395204 (2012)

• M. R. Jennings, A. Pérez-Tomás, A. Bashir, A. Sanchez, A. Severino, P. J. Ward, S. M. Thomas, C. Fisher, P. M. Gammon, M. Zabala, S. E. Burrows, B. Donnellan, D. P. Hamilton, D. Walker and P. A. Mawby.
  Bow Free 4″ Diameter 3C-SiC Epilayers Formed upon Wafer-Bonded Si/SiC Substrates
  ECS Solid State Lett. 1, 6, 85 (2012)

2011

• A. Fontsere, A. Perez-Tomas, M. Placidi, J. Llobet, N. Baron, S. Chenot, Y. Cordier, J. C. Moreno, P. M. Gammon, M. R. Jennings, M. Porti, A. Bayerl, M. Lanza and M. Nafria.
  Micro and nano analysis of 0.2 Ω mm Ti/Al/Ni/Au ohmic contact to AlGaN/GaN
  Appl. Phys. Lett. 99, 213504 (2011)

• A. Fontsere, A. Perez-Tomas, M. Placidi, P. Fernandez-Martinez, N. Baron, S. Chenot, Y. Cordier, J. C. Moreno, P. M. Gammon and M. R. Jennings.
  Temperature dependence of Al/Ti-based Ohmic contact to GaN devices: HEMT and MOSFET.
  Microelectronic Engineering, 88, 1340, (2011)

• A. Perez-Tomas, M. Placidi, A. Fontsere, P. M. Gammon and M. R. Jennings.
  Temperature behavior and modeling of ohmic contacts to Si(+) implanted n-type GaN.
  Microelectronics Reliability, 51, 1325 (2011)

2010

• P. M. Gammon, A. Pérez-Tomás, M. R. Jennings, O. J. Guy, N. Rimmer, J. Llobet, N. Mestres, P. Godignon, M. Placidi, M. Zabala, J. A. Covington, and P. A. Mawby.
  Integration of HfO2 on Si/SiC heterojunctions for the gate architecture of SiC power devices.
  Appl. Phys. Lett. 97, 013506 (2010)

• P. M. Gammon, A. Perez-Tomas, M. R. Jennings, V. A. Shah, S. A. Boden, .M. C. Davis, S. E. Burrows, G. J. Roberts, J. A. Covington, and P. A. Mawby.
  Interface characteristics of n-n and p-n Ge/SiC heterojunction diodes formed by MBE deposition.
  J. Appl. Phys. 107, 124512 (2010)

2009

• P. M. Gammon, A. Perez-Tomas, M. R. Jennings, G. J. Roberts, V. A. Shah, J. A. Covington, and P. A. Mawby.
  Analysis of inhomogeneous Ge/SiC heterojunction diodes.
  J. Appl. Phys. 106, 093708 (2009)

• A. Perez-Tomas, M. Lodzinski, O. J. Guy, M. R. Jennings, M. Placidi, J. Llobet, P. M. Gammon, M. C. Davis, J. A. Covington, S. E. Burrows, and P. A. Mawby.
  Si/SiC bonded wafer: A route to carbon free SiO₂ on SiC.
  Appl. Phys. Lett. 94, 103510 (2009)

2008

• P. M. Gammon, A. Perez-Tomas, M. R. Jennings, G. J. Roberts, M. C. Davis, V. A. Shah, S. E. Burrows, N. R. Wilson, J. A. Covington, and P. A. Mawby.
  Characterization of n-n Ge/SiC heterojunction diodes.
  Appl. Phys. Lett. 93, 112104 (2008)

• A. Perez-Tomas, M. R. Jennings, P. M. Gammon, G. J. Roberts, P. A. Mawby, J. Millan, P. Godignon, J. Montserrat, N. Mestres.
  SiC MOSFETs with thermally oxidized Ta2Si stacked on SiO2 as high-k gate insulator.
  Microelectronic Engineering, 85, 4704, (2008)

• M. R. Jennings, A. Perez-Tomas, O. J. Guy, R. Hammond, S. E. Burrows, P. M. Gammon, M. Lodzinski, J. A. Covington, and P. A. Mawby.
  Si/SiC Heterojunctions Fabricated by Direct Wafer Bonding.
  Electrochem. Solid-State Lett. 11, H306 (2008)

Selected Conference Publications

• P. M. Gammon, F. Li, C. W. Chan, A. M. Sanchez, S. A. Hindmarsh, F. Gity, T. Trajkovic, V. Kilchytska, V. Pathirana, G. Camuso, K. Ben Ali, D. Flandre, P. A. Mawby, J. W. Gardner
  The effect of interfacial charge on the development of wafer bonded silicon-on-silicon-carbide power devices
  ECSCRM, Sept 2016, Halkidiki, Greece. Mat. Sci. For., vol 897, 747 (2017)

• C. W. Chan, F. Li, P. A. Mawby, and P. M. Gammon
  Numerical study of energy capability of Si/SiC LDMOSFETs
  ECSCRM, Sept 2016, Halkidiki, Greece. Mat. Sci. For., vol 897, 751 (2017)

• L. J. Woodend, P. M. Gammon, V. A. Shah, A. Pérez-Tomás, F. Li, D. P. Hamilton, M. Myronov, and P. A. Mawby
  Cryogenic characterisation and modelling of commercial SiC MOSFETs
  ECSCRM, Sept 2016, Halkidiki, Greece. Mat. Sci. For., vol 897, 557 (2017)

• Y. Bonyadi, P. M. Gammon, Y. K. Sharma, G. Baker, P. A. Mawby
  An Investigation into the Impact of Surface Passivation Techniques Using Metal-Semiconductor Interfaces
  ECSCRM, Sept 2016, Halkidiki, Greece. Mat. Sci. For., vol 897, 443 (2017)

• Y. Bonyadi, P. Gammon, R. Bonyadi, O. Alatise, J. Hu, S. Hindmarsh, and P. Mawby
  The impact of triangular defects on electrical characteristics and switching performance of 3.3 kV 4H-SiC PiN diode
  2016 IEEE Energy Conversion Congress and Exposition (ECCE), Milwaukee, WI, pp. 1-5. (2016)

• Y. Bonyadi, P. M. Gammon, R. Bonyadi, V. A. Shah, C. Fisher, D. M. Martin, and P. A. Mawby
  Characterization of 4H-SiC PiN Diodes Formed on Defects Identified by PL Imaging
  ICSCRM, Sept 2015, Sicily, Italy. Mat. Sci. For., vol 858, 405 (2016)

• C. W. Chan, Y. Bonyadi, P. A. Mawby, and P. M. Gammon
  Si/SiC Substrates for the Implementation of Linear-Doped Power LDMOS Studied with Device Simulation
  ICSCRM, Sept 2015, Sicily, Italy. Mat. Sci. For., vol 858, 844 (2016)

• P. M. Gammon, C. W. Chan, and P. A. Mawby
  Simulation of a new hybrid Si/SiC power device for harsh environment applications
  High Temperature Electronics Network (HiTEN), Cambridge, UK, Jul 2015, pp. 190 (2015)

• C. W. Chan, P. M. Gammon, V. A. Shah, H. Chen, M. R. Jennings, C. A. Fisher, A. Perez-Tomas, M. Myronov and P. A. Mawby
  Si/SiC Substrates for the Implementation of Linear-Doped Power LDMOS Studied with Device Simulation
  ECSCRM, Sept 2014, Grenoble, France. Mat. Sci. For., vol 821-823, pp. 624-627 (2015)

• P. M. Gammon, C. A. Fisher, V. A. Shah, M. R. Jennings, A. Perez-Tomas, S. E. Burrows, M. Myronov, D. R. Leadley, P. A. Mawby
  The Cryogenic Testing and Characterisation of SiC Diodes
  ICSCRM, Sept 2013, Miyazaki, Japan. Mat. Sci. For., 778-780, 863 (2014)

• P. M. Gammon
  Silicon and the wide bandgap semiconductors, shaping the future power electronic device market
  Ultimate Integration on Silicon (ULIS), March 2013, Warwick, UK (2013)

• P. M. Gammon, A. Perez-Tomas, M. R. Jennings, A.M. Sanchez, C. A. Fisher, S. T. Thomas, B. T. Donnellan, and P. A. Mawby.
  Bipolar conduction across a wafer bonded p-n Si/SiC heterojunction
  ECSCRM, Sep 2012, St. Petersburg, Russia (2013)

• J. S. Pang, P. M. Gammon, E. Donchev, F. Xie, A. Centeno, P. K. Petrov, M. P. Ryan, N. Alford.
  Nanoantenna for direct solar energy extraction.
  MRS Fall Meeting, Oct 2012, Boston, USA (2012)

• P. M. Gammon, E. Donchev, J. S. Pang, T. Wang, B. Zou, P. K. Petrov and N. M. Alford
  The modelling of inhomogeneous Si Schottky barrier diodes
  U.K. Semiconductor, July 2012, Sheffield, UK (2012)

• C. A. Fisher, M. R. Jennings, A. T. Bryant, A. Perez-Tomas, P. M. Gammon, P. Brosselard, P. Godignon, and P. A. Mawby.
  Physical Modelling of 4H-SiC PiN Diodes
  ICSCRM, Sep 2011, Cleveland, USA, Mat. Sci. For., 717-720, 993 (2012)

• P. M. Gammon, A. Pérez-Tomás, M. R. Jennings, O. J. Guy, N. Rimmer, J. Llobet, N. Mestres, P. Godignon, M. Placidi, M. Zabala, J. A. Covington, and P. A. Mawby.
  Characterization of HfO2/Si/SiC MOS Capacitors.
  ECSCRM, Aug 2010, Oslo, Norway, Mat. Sci. For., 679-680, 674 (2011)

• A. Perez-Tomas, A. Fontsere, M. Placidi, P. Godignon, N. Baron,c, S. Chenot Y. Cordier, J. C. Moreno, P. M. Gammon, M. R. Jennings and J. Millan
  Ohmic Contact Resistance to GaN Devices Dependence with on Temperature for GaN Devices.
  ECSCRM, Aug 2010, Oslo, Norway, Mat. Sci. For., 679-680, 816 (2011)

• A. Perez-Tomas, M. R. Jennings, P. M. Gammon, V. A. Shah, P. A. Mawby, O. J. Guy, and R. Hammond.
  Si on SiC, a novel platform for MOS power devices.
  ESSDERC, Oct 2010, Seville, Spain (2010).

• P. M. Gammon, A. Perez-Tomas, M. R. Jennings, G. J. Roberts, V. A. Shah, J. A. Covington, and P. A. Mawby.
  Ge/SiC heterojunction diodes - a study in device characteristics with increasing layer thickness and deposition temperature.
  ICSCRM, Sept 2009, Nuremburg, Germany. Mat. Sci. For., 645-648, 889 (2010)

• M. R. Jennings, A. Perez-Tomas, O. J. Guy, M. Lodzinski, P. M. Gammon, S. E. Burrows, J. A. Covington, and P. A. Mawby.
  Si-on-SiC, a novel semiconductor structrure for power devices.
  ICSCRM, Sept 2009, Nuremburg, Germany. Mat. Sci. For., 645-648, 1243 (2010)

PhD Thesis

• P. M. Gammon, Development of SiC Heterojunction Power Devices, May 2011, Warwick University.