• Wu, Ruizhu, Gonzalez, Jose Ortiz, Davletzhanova, Zarina, Mawby, Philip. A., Alatise, Olayiwola M., 2020. Fast switching SiC cascode JFETs for EV traction inverters. Applied Power Electronics Conference and Exposition (APEC), Annual IEEE Conference, Virtual conference, 15-19 Mar 2020, Published in 2020 IEEE Applied Power Electronics Conference and Exposition (APEC), pp. 3489-3496
• Gonzalez, Jose Ortiz, Alatise, Olayiwola M., Mawby, Philip. A., 2020. Non-intrusive methodologies for characterization of bias temperature instability in SiC power MOSFETs. 2020 IEEE International Reliability Physics Symposium (IRPS), Dallas, TX, USA, 28 Apr -30 May 2020
• Gonzalez, Jose Ortiz, Alatise, Olayiwola M., Mawby, Philip. A., 2019. Characterization of BTI in SiC MOSFETs using third quadrant characteristics. 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD), Shanghai, China, 19-23 May 2019, Published in 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD), pp. 207-210
• Shao, Weihua, Ran, Li, Zeng, Zheng, Wu, Ruizu, Mawby, Philip, Huaping, Jiang, Kastha, Debaprasad, Bajpai, Prabodh, 2018. Power Modules for Pulsed Power Applications Using Phase Change Material. 2018 Second International Symposium on 3D Power Electronics Integration and Manufacturing (3D-PEIM), College Park, MD, USA, 08 November 2018, pp. 1-6
• Davletzhanova, Zarina, Dai, Tianxiang, Alatise, Olayiwola M., Gonzalez, Jose Ortiz, Mawby, Philip. A., Bonyadi, Roozbeh, Chan, Chun Wa, 2018. Safe-operating-area of snubberless series connected silicon and SiC power devices. Energy Conversion Congress and Exposition, ECCE, IEEE, Portland, OR, USA, 23-27 Sep 2018, Published in 2018 IEEE Energy Conversion Congress and Exposition (ECCE), pp. 1875-1881
• Hu, Borong, Konaklieva, Sylvia, Ran, Li, Kourra, Nadia, Williams, Mark A., Lai, Wei, Mawby, Philip. A., 2018. Long term reliability of power modules with low amplitude thermomechanical stresses and initial defects. 2018 IEEE Energy Conversion Congress and Exposition (ECCE), Portland, OR, USA, 23 - 27 Sep 2018, Published in 2018 IEEE Energy Conversion Congress and Exposition (ECCE)
• Ortiz Gonzalez, Jose Angel, Alatise, Olayiwola M., Ran, Li, Mawby, P. A. (Philip A.), Rajaguru, Pushparajah, Bailey, Christopher, 2017. An initial consideration of silicon carbide devices in pressure-packages. 2016 IEEE Energy Conversion Congress and Exposition (ECCE), Milwaukee, WI, 18-22 Sep 2016, Published in 2016 IEEE Energy Conversion Congress and Exposition (ECCE)
• Ortiz Gonzalez, Jose Angel, Alatise, Olayiwola M., Ran, Li, Mawby, P. A., 2017. Impact of temperature imbalance on junction temperature identification for multiple chip modules using TSEPs. PCIM Europe 2017; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, Nürnberg, Deutschland, 16-18 May 2017, Published in Proceedings of PCIM Europe 2017; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
• Ortiz Gonzalez, Jose Angel, Alatise, O., Mawby, P. A. (Philip A.), Aliyu, A. M., Castellazzi, A., 2017. Pressure contact multi-chip packaging of SiC Schottky diodes. 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD), Sapporo, Japan, 28 May-1 Jun 2017, Published in 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD)
• Ortiz Gonzalez, Jose Angel, Alatise, Olayiwola M., Nobeen, Nadeesh, Hu, Ji, Ran, Li, Mawby, P. A. (Philip A.), 2016. Electrothermal considerations for power cycling in SiC technologies. 9th International Conference on Integrated Power Electronics Systems, Nuremberg, Germany, 08-10 Mar 2016, Published in Proceedings of CIPS 2016; 9th International Conference on Integrated Power Electronics Systems
• Ortiz Gonzalez, Jose Angel, Ran, Li, Mohamed Motalab Ali Soli, A., Davletzhanova, Zarina, Alatise, Olayiwola M., Mawby, P. A. (Philip A.), Borong, Hu, Zheng, Zeng, Hai, Ren, Li, Hui, Shengyou, Xu, 2016. Enabling high reliability power modules : a multidisciplinary task. International Symposium on 3D Power Electronics Integration and Manufacturing, McKimmon Center, Raleigh, NC, USA, 13-15 June 2016
• Ortiz Gonzalez, Jose Angel, Alatise, Olayiwola M., Hu, Ji, Ran, Li, Mawby, P. A. (Philip A.), 2016. Temperature sensitive electrical parameters for condition monitoring in SiC power MOSFETs. 8th IET International Conference on Power Electronics, Machines and Drives (PEMD 2016), Glasgow, UK, 19-21 April 2016, Published in 8th IET International Conference on Power Electronics, Machines and Drives (PEMD 2016)
• Alexakis, Petros, Alatise, Olayiwola M., Hu, Ji, Jahdi, Saeed, Ortiz Gonzalez, Jose Angel, Ran, Li, Mawby, P. A. (Philip A.), 2015. Analysis of power device failure under avalanche mode conduction. Power Electronics and ECCE Asia (ICPE-ECCE Asia), 2015 9th International Conference on, Seoul, South Korea, 1-5 Jun 2015, Published in 2015 9th International Conference on Power Electronics and ECCE Asia (ICPE-ECCE Asia), pp. 1833-1839
• Jahdi, Saeed, Alatise, Olayiwola M., Ortiz Gonzalez, Jose Angel, Ran, Li, Mawby, P. A. (Philip A.), 2015. Comparative analysis of false turn-ON in silicon bipolar and SiC unipolar power devices. Energy Conversion Congress and Exposition (ECCE), 2015 IEEE, 20-24 Sept 2015, Montreal, QC, Published in 2015 IEEE Energy Conversion Congress and Exposition (ECCE), pp. 2239-2246
• Jahdi, Saeed, Alatise, Olayiwola M., Ortiz Gonzalez, Jose Angel, Gammon, P. M., Ran, Li, Mawby, P. A. (Philip A.), 2015. Investigation of parasitic turn-ON in silicon IGBT and Silicon Carbide MOSFET devices : a technology evaluation. Power Electronics and Applications (EPE'15 ECCE-Europe), 2015 17th European Conference on, Geneva, Switzerland, 8-10 Sep 2015, Published in 2015 17th European Conference on Power Electronics and Applications (EPE'15 ECCE-Europe), pp. 1-8
• Bonyadi, Roozbeh, Alatise, Olayiwola M., Jahdi, Saeed, Ortiz Gonzalez, Jose Angel, Ran, Li, Mawby, P. A. (Philip A.), 2015. Modeling of temperature dependent parasitic gate turn-on in silicon IGBTs. Power Electronics and ECCE Asia (ICPE-ECCE Asia), 2015 9th International Conference on, Seoul, South Korea, 1-5 Jun 2015, Published in 2015 9th International Conference on Power Electronics and ECCE Asia (ICPE-ECCE Asia), pp. 560-566
• Bonyadi, Roozbeh, Alatise, Olayiwola M., Jahdi, Saeed, Ortiz Gonzalez, Jose Angel, Davletzhanova, Zarina, Ran, Li, Michaelides, Alexandros, Mawby, P. A. (Philip A.), 2015. Physics-based modelling and experimental characterisation of parasitic turn-on in IGBTs. Power Electronics and Applications (EPE'15 ECCE-Europe), 2015 17th European Conference on, Geneva, Switzerland, 8-10 Sep 2015, Published in 2015 17th European Conference on Power Electronics and Applications (EPE'15 ECCE-Europe), pp. 1-9
• Gammon, P. M., Chan, Chun Wa, Mawby, P. A. (Philip A.), 2015. Simulation of a new hybrid Si/SiC power device for harsh environment applications. High Temperature Electronics Network (HiTEN), Cambridge, Jul 2015, Published in HiTEN, pp. 190-194
• Chen, Han, Gammon, P. M., Shah, V. A., Fisher, Craig A., Chan, Chun Wa, Jahdi, Saeed, Hamilton, Dean P., Jennings, M. R., Myronov, Maksym, Leadley, D. R. (David R.), Mawby, P. A. (Philip A.), 2015. Cryogenic characterization of commercial SiC Power MOSFETs. Silicon Carbide and Related Materials 2014, Grenoble, France, Sep 2014, Published in Materials Science Forum, pp. 777-780
• Hu, Ji, Alatise, Olayiwola M., Ortiz Gonzalez, Jose Angel, Alexakis, Petros, Ran, Li, Mawby, P. A. (Philip A.), 2015. Finite element modelling and experimental characterisation of paralleled SiC MOSFET failure under avalanche mode conduction. Power Electronics and Applications (EPE'15 ECCE-Europe), 2015 17th European Conference on, Geneva, Switzerland, 8-10 Sep 2015, Published in 2015 17th European Conference on Power Electronics and Applications (EPE'15 ECCE-Europe), pp. 1-9
• Tang, Yuan, Ran, Li, Alatise, Olayiwola M., Mawby, P. A. (Philip A.), 2014. Capacitor selection for modular multilevel converter. Energy Conversion Congress and Exposition (ECCE), 2014 IEEE, Pittsburgh, PA, 14-18 Sep 2014, Published in 2014 IEEE Energy Conversion Congress and Exposition (ECCE), pp. 2080-2087
• Hamilton, Dean P., Jennings, M. R. (Michael R.), Sharma, Yogesh K., Fisher, Craig A., Alatise, Olayiwola M., Mawby, P. A. (Philip A.), 2014. Evaluation of commercially available SiC devices and packaging materials for operation up to 350°C. Energy Conversion Congress and Exposition (ECCE), 2014 IEEE, Pittsburgh, PA, 14-18 Sep 2014, Published in 2014 IEEE Energy Conversion Congress and Exposition (ECCE), pp. 4381-4387
• Bonyadi, Roozbeh, Alatise, Olayiwola M., Jahdi, Saeed, Hu, Ji, Evans, L., Mawby, P. A. (Philip A.), 2014. Investigating the reliability of SiC MOSFET body diodes using Fourier series modelling. Energy Conversion Congress and Exposition (ECCE), 2014 IEEE, Pittsburgh, PA, 14-18 Sept. 2014, Published in 2014 IEEE Energy Conversion Congress and Exposition (ECCE), pp. 443-448
• Jahdi, Saeed, Alatise, Olayiwola M., Mawby, P. A. (Philip A.), 2014. Modeling of turn-OFF transient energy in IGBT controlled silicon PiN diodes. Power Electronics and Applications (EPE'14-ECCE Europe), 2014 16th European Conference on, Lappeenranta, Finland, 26-28 Aug 2014, Published in 2014 16th European Conference on Power Electronics and Applications (EPE'14-ECCE Europe), pp. 1-9
• Jahdi, Saeed, Alatise, Olayiwola M., Alexakis, Petros, Ran, Li, Mawby, P. A. (Philip A.), 2014. Electrothermal modeling and characterization of SiC Schottky and silicon PiN diodes switching transients. Energy Conversion Congress and Exposition (ECCE), 2014 IEEE, Pittsburgh, PA, 14-18 Sep 2014, Published in 2014 IEEE Energy Conversion Congress and Exposition (ECCE), pp. 2817-2823
• Fisher, Craig A., Jennings, M. R., Sharma, Yogesh K., Hamilton, Dean P., Li, Fan, Gammon, P. M., Pérez-Tomás, Amador, Thomas, Stephen M., Burrows, S. E. (Susan E.), Mawby, P. A. (Philip A.), 2014. On the application of novel high temperature oxidation processes to enhance the performance of high voltage silicon carbide PiN diodes. 2014 16th European Conference on Power Electronics and Applications (EPE'14-ECCE Europe), Finland, 26-28 Aug 2014, Published in 2014 16th European Conference on Power Electronics and Applications (EPE'14-ECCE Europe), pp. 1-9
• Jennings, M. R., Pérez-Tomás, Amador, Severino, Andrea, Ward, Peter J., Bashir, Arif, Fisher, Craig A., Thomas, Stephen M., Gammon, P. M., Donnellan, Benedict T., Rong, Hua, Hamilton, Dean P., Mawby, P. A. (Philip A.), 2013. Innovative 3C-SiC on SiC via direct wafer bonding. 9th European Conference on Silicon Carbide and Related Materials, ECSCRM 2012, St. Petersburg, Russian Federation, 2 - 6 Sept 2012, Published in Materials Science Forum, pp. 271-274
• Jahdi, Saeed, Alatise, Olayiwola M., Mawby, P. A., 2013. On the performance of voltage source converters based on silicon carbide technology. 2013 35th International Telecommunications Energy Conference 'Smart Power and Efficiency' (INTELEC), Hamburg, Germany, 13-17 Oct 2013, Published in Proceedings of 2013 35th International Telecommunications Energy Conference 'Smart Power and Efficiency' (INTELEC)
• Jahdi, Saeed, Alatise, Olayiwola M., Mawby, P. A. (Philip A.), 2013. The impact of silicon carbide technology on grid-connected Distributed Energy resources. 2013 4th IEEE/PES Innovative Smart Grid Technologies Europe (ISGT EUROPE), Lyngby, 6-9 Oct 2013, Published in 2013 4th IEEE/PES Innovative Smart Grid Technologies Europe (ISGT EUROPE), pp. 1-5
• Gammon, P. M., Pérez-Tomás, Amador, Jennings, M. R., Sánchez, Ana M., Fisher, Craig A., Thomas, Stephen M., Donnellan, Benedict T., Mawby, P. A. (Philip A.), 2013. Bipolar conduction across a wafer bonded p-n Si/SiC heterojunction. 9th European Conference on Silicon Carbide and Related Materials, ECSCRM 2012, St. Petersburg, Russian Federation, 2 - 6 Sept 2012, Published in Materials Science Forum, pp. 1006-1009
• Alexakis, Petros, Alatise, Olayiwola M., Ran, Li, Mawby, P. A. (Philip A.), 2013. Modeling power converters using hard switched silicon carbide MOSFETs and Schottky barrier diodes. Power Electronics and Applications (EPE), 2013 15th European Conference on, Lille, France, 2-6 Sep 2013, Published in 2013 15th European Conference on Power Electronics and Applications (EPE), pp. 1-9
• Parker-Allotey, Nii-Adotei, Hamilton, Dean P., Alatise, Olayiwola M., Jennings, M. R., Mawby, P. A. (Philip A.), Nash, Robert Alastair, Magill, Rob, 2012. Improved energy efficiency using an IGBT/SiC-Schottky diode pair. International Conference on Silicon Carbide and Related Materials 2011, Cleveland, Ohio, U.S.A., Sep 11-16, 2011, Published in Materials Science Forum, pp. 1147-1150
• Donnellan, B. T., Mawby, P. A. (Philip A.), Rahimo, M., Storasta, L., 2012. Introducing a 1200V vertical merged IGBT and Power MOSFET : The HUBFET. 27th Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2012, Orlando, FL, 5-9 Feb 2012, Published in Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC, pp. 152-156
• Alatise, Olayiwola M., Parker-Allotey, Nii-Adotei, Mawby, P. A. (Philip A.), 2012. The dynamic performance of SiC Schottky barrier diodes with parasitic inductances over a wide temperature range. 6th IET International Conference on Power Electronics, Machines and Drives (PEMD 2012), Bristol, UK., 27-29 Mar 2012, Published in The conference prceedings for the IET Power Electronics, Machines and Drives : 27 - 29 March 2012, pp. 1-6
• Parker-Allotey, Nii-Adotei, Alatise, Olayiwola M., Hamilton, Dean P., Jennings, M. R., Mawby, P. A. (Philip A.), Nash, Robert Alastair, Magill, Rob, 2011. Conduction and switching loss comparison between an IGBT/Si-PiN diode pair and an IGBT/SiC-Schottky diode pair. IEEE Innovative Smart Grid Technologies Conference (ISGT), Manchester Central Convention Complex, Manchester, United Kingdom, Dec 5-7, 2011, Published in Innovative Smart Grid Technologies (ISGT Europe), 2011 2nd IEEE PES International Conference and Exhibition on, pp. 1-6
• Alatise, Olayiwola M., Parker-Allotey, Nii-Adotei, Mawby, P. A. (Philip A.), 2011. Super-junction trench MOSFETs for improved energy conversion efficiency. IEEE Innovative Smart Grid Technologies Conference (ISGT), Manchester Central Convention Complex, Manchester, United Kingdom, Dec 5-7, 2011, Published in Innovative Smart Grid Technologies (ISGT Europe), 2011 2nd IEEE PES International Conference and Exhibition on, pp. 1-5
• Alatise, Olayiwola M., Parker-Allotey, Nii-Adotei, Jennings, M. R., Mawby, P. A. (Philip A.), Kennedy, Ian, Petkos, George, 2011. Trench depth optimization for energy efficient discrete power trench MOSFETs. The 41st European Solid State Device Research Conference (ESSDERC), Finlandia Hall, Helsinki, Finland, Sep 12-16, 2011, Published in Solid-State Device Research Conference (ESSDERC), 2011 Proceedings of the European, pp. 291-294
• Gammon, P. M., Pérez-Tomás, Amador, Jennings, M. R., Roberts, G. J., Shah, V. A., Covington, James A., Mawby, P. A., 2010. Germanium-silicon carbide heterojunction diodes - a study in device characteristics with increasing layer thickness and deposition temperature. 13th International Conference on Silicon Carbide and Related Materials, Nurnberg, Germany, October 11-16, 2009, Published in Materials Science Forum, pp. 889-892
• Leong, K. K., Bryant, Angus T., Mawby, P. A. (Philip A.), 2010. Power MOSFET operation at cryogenic temperatures : comparison between HEXFET (R), MDMesh (TM) and CoolMOS (TM). 22nd International Symposium on Power Semiconductor Devices and ICs, Hiroshima, Japan, 06-10 Jun 2010, Published in Proceedings of the International Symposium on Power Semiconductor Devices & ICs, pp. 209-212
• Jennings, M. R., Pérez-Tomás, Amador, Guy, O. J., Lodzinski, M., Gammon, P. M., Burrows, S., Covington, James A., Mawby, P. A., 2010. Silicon-on-SiC, a novel semiconductor structure for power devices. 13th International Conference on Silicon Carbide and Related Materials, Nurnberg, Germany, October 11-16, 2009, Published in Materials Science Forum, pp. 1243-1246
• Pérez-Tomás, Amador, Jennings, M. R., Gammon, P. M., Shah, V. A., Mawby, P. A. (Philip A.), Guy, O. J., Hammond, R., 2010. Si on SiC, a novel platform for MOS power devices. 40th European Solid State Device Research Conference (ESSDERC), Seville, Spain, Sep 13-17, 2010
• Yang, Shaoyong, Bryant, Angus T., Mawby, P. A. (Philip A.), Xiang, Dawei, Ran, Li, Tavner, Peter, 2009. An industry-based survey of reliability in power electronic converters. IEEE Energy Conversion Congress and Exposition, San Jose, CA, 20-24 Sep 2009, Published in 2009 IEEE Energy Conversion Congress and Exposition, Vols. 1-6, pp. 2612-2618
• Ahmed, M. M. R., Mawby, P. A. (Philip A.), 2009. Design specification of a 270 V 100 A solid-state power controller suitable for aerospace applications. 13th European Conference on Power Electronics and Applications (EPE 2009), Barcelona, SPAIN, September 08-10, 2009, pp. 5884-5891
• Swan, I. R. (Ian R.), Bryant, A. T., Parker-Allotey, Nii-Adotei, Mawby, P. A. (Philip A.), 2009. 3-D thermal simulation of power module packaging. IEEE Energy Conversion Congress and Exposition, San Jose, CA, September 20-24, 2009, Published in 2009 IEEE Energy Conversion Congress and Exposition, Vols. 1-6, pp. 1185-1192
• Tong, C. F., Mawby, P. A., Covington, James A., 2009. 'Field balanced' SG-RSO structure showing tremendous potential for low voltage trench MOSFETs. 13th European Conference on Power Electronics and Applications (EPE 2009), Barcelona, Spain, September 08-10, 2009, Published in EPE: 2009 13th European Conference on Power Electronics and Applications, Vols.1-9, pp. 5471-5475
• Guy, O. J., Pérez-Tomás, Amador, Jennings, M. R., Lodzinski, M., Castaing, A., Mawby, P. A., Covington, James A., Wilks, S. P., Hammond, R., Connolly, D., Jones, S., Hopkins, J., Wilby, T., Rimmer, N., Baker, K., Conway, S., Evans, S., 2009. Investigation of Si/4H-SiC hetero-junction growth and electrical properties. 7th European Conference on Silicon Carbide and Related Materials, Barcelona, Spain, September 07-11, 2008, Published in Materials Science Forum, pp. 443-446
• Tong, C. F., Mawby, P. A., Covington, James A., Pérez-Tomás, Amador, 2009. Investigation on split-gate RSO MOSFET for 30V breakdown. 9th International Seminar on Power Semiconductors 2008 (ISPS 2008), Prague, Czech Republic, Aug 27-29, 2008, Published in Proceedings of the 9th International Seminar on Power Semiconductors 2008 (ISPS 2008), pp. 97-102
• Bryant, Angus T., Jennings, M. R., Parker-Allotey, Nii-Adotei, Mawby, P. A. (Philip A.), Pérez-Tomás, Amador, Brosselard, P., Godignon, P., Jorda, X., Milian, J., Palmer, P. R., Santi, E., Hudgins, J. L., 2009. Physical modelling of large area 4H-SiC PiN diodes. IEEE Energy Conversion Congress and Exposition, San Jose, CA, September 20-24, 2009, Published in 2009 IEEE Energy Conversion Congress and Exposition, Vols. 1-6, pp. 494-501
• Tong, C. F., Cortes, I., Mawby, P. A., Covington, James A., Morancho, F., 2009. Static and dynamic analysis of split-gate. RESURF stepped oxide (RSO) MOSFETs for 35 V applications. 7th Spanish Conference on Electron Devices, Univ Santiago de Compostelea, Santiago de Compostela, Spain, February 11-13, 2009, Published in PROCEEDINGS OF THE 2009 SPANISH CONFERENCE ON ELECTRON DEVICES, pp. 250-253
• Ahmed, M. M. R., Mawby, P. A. (Philip A.), 2008. Analysis of parallel CoolMOS under saturation-mode operation. 34th Annual Conference of the IEEE-Industrial-Electronics-Society, Orlando, FL, Nov 10-13, 2008, Published in IEEE Industrial Electronics Society. Annual Conference. Proceedings, pp. 500-504
• Bryant, Angus T., Mawby, P. A. (Philip A.), Palmer, Patrick R., Santi, Enrico, Hudgins, Jerry L., 2008. Exploration of power device reliability using compact device models and fast electrothermal simulation. 41st Annual Meeting of the IEEE Industry Applications Society, Tampa, FL, Oct 08-12, 2006, Published in IEEE Transactions on Industry Applications, pp. 894-903
• Swan, I. R. (Ian R.), Bryant, Angus T., Mawby, P. A. (Philip A.), 2008. Fast thermal models for power device packaging. IEEE Industry-Applications-Society Annual Meeting, Alberta, Canada, Oct 05-09, 2008, Published in Industry Applications Society. IEEE - IAS Annual Meeting. Conference Record, pp. 1457-1464
• Jennings, M. R., Pérez-Tomás, Amador, Gammon, P. M., Davis, M., Chow, T. P., Mawby, P. A. (Philip A.), 2008. Layered metal and highly doped MBE Si contacts for 4H-SiC power devices. 9th International Seminar on Power Semiconductors (ISPS 2008), Prague, Czech Republic, Aug 27-29, 2008, Published in IET Digest, pp. 69-72
• Guy, Owen J., Lodzinski, Michal, Castaing, Ambroise, Igic, P. M., Pérez-Tomás, Amador, Jennings, M. R., Mawby, P. A. (Philip A.), 2008. Silicon carbide Schottky diodes and MOSFETs: solutions to performance problems. 13th International Power Electronics and Motion Control Conference, Poznan, Poland, Sep 01-03, 2008, Published in Proceedings of the 13th International Power Electronics and Motion Control Conference, pp. 2464-2471
• Jennings, M. R., Pérez-Tomás, Amador, Walker, D., Zhu, L., Losee, P., Huang, W., Balachandran, S., Guy, O. J., Covington, James A., Chow, T. P., Mawby, P. A., 2007. Development of low resistance Al/Ti stacked metal contacts to p-type 4H-SiC. 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, Sep 2006, Published in Silicon Carbide and Related Materials 2006 : ECSCRM 2006, pp. 697-700
• Roberts, G. J., Bryant, A. T., Mawby, P. A. (Philip A.), Ueta, T., Nisijima, T., Hamada, K., 2007. Evaluation of silicon carbide devices for hybrid vehicle drives. 2007 European Conference on Power Electronics and Applications, Aalborg, Denmark, 2-5 Sep 2007, Published in EPE 2007: 12th European Conference on Power Electronics and Applications, pp. 2662-2671
• Bryant, A. T., Roberts, G. J., Walker, A., Mawby, P. A. (Philip A.), 2007. Fast inverter loss simulation and silicon carbide device evaluation for hybrid electric vehicle drives. 4th Power Conversion Conference (PCC-Nagoya 2007), Nagoya, Japan, 2-5 Apr 2007, Published in 2007 Power Conversion Conference - Nagoya, Vols 1-3, pp. 1017-1024
• Mawby, P. A., Pérez-Tomás, Amador, Jennings, M. R., Davis, M., Covington, James A., Shah, V. A., Grasby, T., 2007. Molecular beam epitaxy Si/4H-SiC heterojunction diodes. 14th International Workshop on the Physics of Semiconductor Devices, Indian Inst Technol, Mumbai, India, 16-20 Dec 2007, Published in International Workshop on Physics of Semiconductor Devices, 2007. IWPSD 2007, pp. 775-780
• Pérez-Tomás, Amador, Jennings, M. R., Mawby, P. A., Covington, James A., Godignon, P., Millan, J., Mestres, N., 2007. SiC MOSFET channel mobility dependence on substrate doping and temperature considering high density of interface traps. 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, 3-7 Sep 2006, Published in Silicon Carbide and Related Materials 2006 : ECSCRM 2006, pp. 835-838
• Mawby, P. A. (Philip A.), Bryant, A. T., Palmer, P. R., Santi, E., Hudgins, J. L., 2006. High speed electro-thermal models for inverter simulations. 25th International Conference on Microelectronics, Belgrade, SERBIA MONTENEG, MAY 14-17, 2006, Published in 2006 25TH INTERNATIONAL CONFERENCE ON MICROELECTRONICS, VOLS 1 AND 2, PROCEEDINGS, pp. 175-182