Professor Philip Mawby - Journal Publications

Dai, Tianxiang, Zhang, L., Vavasour, Oliver J., Renz, A. B., Shah, V. A., Antoniou, M., Mawby, P. A. (Philip A.), Gammon, P. M., 2021. A compact trench-assisted space-modulated JTE design for high-voltage 4H-SiC devices. IEEE Transactions on Electron Devices
Baker, G. W. C., Chan, C., Renz, A. B., Qi, Yunyi, Dai, Tianxiang, Li, Fan, Shah, V. A., Mawby, P. A. (Philip A.), Antoniou, Marina, Gammon, P. M., 2021. Optimization of 1700-V 4H-SiC superjunction Schottky rectifiers with implanted p-pillars for practical realization. IEEE Transactions on Electron Devices, pp. 1-8
Renz, A. B., Shah, V. A., Vavasour, Oliver J., Bonyadi, Yeganeh, Li, Fan, Dai, Tianxiang, Baker, G. W. C., Hindmarsh, Steven A., Han, Yan, Walker, Marc, Sharma, Y., Liu, Y., Raghothamachar, B., Dudley, M., Mawby, P. A. (Philip A.), Gammon, P. M., 2020. The improvement of Mo/4H-SiC Schottky diodes via a P2O5 surface passivation treatment. Journal of Applied Physics, 127 (2)
Arvanitopoulos, Anastasios E., Antoniou, Marina, Jennings, Mike R., Perkins, Samuel, Gyftakis, Konstantinos N., Mawby, Philip. A., Lophitis, Neophytos, 2020. A defects-based model on the barrier height behavior in 3C-SiC-on-Si Schottky barrier diodes. IEEE Journal of Emerging and Selected Topics in Power Electronics, 8 (1), pp. 54-65
Wu, Ruizhu, Gonzalez, Jose Ortiz, Davletzhanova, Zarina, Mawby, Philip. A., Alatise, Olayiwola M., 2019. The potential of SiC Cascode JFETs in electric vehicle traction inverters. IEEE Transactions on Transportation Electrification, 5 (4), pp. 1349-1359
Gonzalez, Jose Ortiz, Alatise, Olayiwola M., Mawby, Philip. A., 2019. Novel method for evaluation of negative bias temperature instability of SiC MOSFETs. Materials Science Forum, 963, pp. 749-752
Dai, Tianxiang, Chan, Chun Wa, Deng, Xc, Jiang, Huaping, Gammon, P. M., Jennings, M. R., Mawby, P. A. (Philip A.), 2018. 4H-SiC trench MOSFET with integrated fast recovery MPS diode. ELECTRONICS LETTERS, 54 (3), pp. 167-169
Woodend, Lee, Gammon, P. M., Shah, Vishal, Pérez-Tomás, Amador, Li, Fan, Hamilton, Dean P., Myronov, Maksym, Mawby, P. A. (Philip A.), 2017. Cryogenic characterisation and modelling of commercial SiC MOSFETs. Materials Science Forum, 897, pp. 557-560
Li, Fan, Gammon, P. M., Chan, Chun Wa, Gity, F., Trajkovic, T., Kilchytska, V., Pathirana, V., Ben Ali, K., Flandre, D., Mawby, P. A. (Philip A.), Gardner, J. W., 2017. Design and fabrication of a power Si/SiC LDMOSFET for high temperature applications. Additional Conferences (Device Packaging, HiTEC, HiTEN, & CICMT), 2017 (HiTen), pp. 000219-000222
Gammon, P. M., Chan, Chun Wa, Gity, F., Trajkovic, T., Kilchytska, V., Li, Fan, Pathirana, V., Camuso, G., Ben Ali, K., Flandre, D., Mawby, P. A. (Philip A.), Gardner, J. W., 2017. Design and fabrication of silicon-on-silicon-carbide substrates and power devices for space applications. E3S Web of Conferences, 16
Lai, Wei, Chen, Mingyou, Ran, Li, Xu, Shengyou, Jiang, Nan, Wang, Xuemei, Alatise, Olayiwola M., Mawby, P. A., 2017. Experimental investigations on the effects of narrow junction temperature cycles on die-attach solder layer in an IGBT module. IEEE Transactions on Power Electronics, 32 (2), pp. 1431-1441
Hu, Borong, Ortiz Gonzalez, Jose Angel, Ran, Li, Ren, Hai, Zeng, Zheng, Lai, Wei, Gao, Bing, Alatise, Olayiwola M., Lu, Hua, Bailey, Christopher, Mawby, P. A. (Philip A.), 2017. Failure and reliability analysis of a SiC power module based on stress comparison to a Si device. IEEE Transactions on Device and Materials Reliability, 17 (4), pp. 727-737
Russell, Stephen, Jennings, M. R. (Michael R.), Dai, Tianxiang, Li, Fan, Hamilton, Dean P., Fisher, Craig A., Sharma, Yogesh K., Mawby, P. A. (Philip A.), Pérez-Tomás, Amador, 2017. Functional oxide as an extreme high-k dielectric towards 4H-SiC MOSFET incorporation. Materials Science Forum, 897, pp. 155-158
Russell, Stephen, Pérez-Tomás, Amador, McConville, C. F., Fisher, Craig A., Hamilton, Dean P., Mawby, P. A. (Philip A.), Jennings, Michael R., 2017. Heteroepitaxial beta-Ga2O3 on 4H-SiC for an FET with reduced self heating. Journal of the Electron Devices Society, 5 (4), pp. 256-261
Chan, Chun Wa, Li, Fan, Mawby, P. A. (Philip A.), Gammon, P. M., 2017. Numerical study of energy capability of Si/SiC LDMOSFETs. Materials Science Forum, 897, pp. 751-754
Li, Fan, Vavasour, O., Walker, Marc, Martin, David, Sharma, Yogesh K., Russell, Stephen, Jennings, M. R., Pérez-Tomás, Amador, Mawby, P. A. (Philip A.), 2017. Physical characterisation of 3C-SiC(001)/SiO2 interface using XPS. Materials Science Forum, 897, pp. 151-154
Gammon, P. M., Li, Fan, Chan, Chun Wa, Sánchez, Ana M., Hindmarsh, Steven A., Gity, Farzan, Trajkovic, Tanya, Kilchytska, Valeriya, Pathirana, Vasantha, Camuso, Gianluca, Ben Ali, Khaled, Flandre, Denis, Mawby, P. A. (Philip A.), Gardner, J. W., 2017. The effect of interfacial charge on the development of wafer bonded silicon-on-silicon-carbide power devices. Materials Science Forum, 897, pp. 747-750
Chan, Chun Wa, Li, Fan, Sánchez, Ana M., Mawby, P. A. (Philip A.), Gammon, P. M., 2017. Comparative study of RESURF Si/SiC LDMOSFETs for high-temperature applications using TCAD modeling. IEEE Transactions on Electron Devices, 64 (9), pp. 3713-3718
Gao, Bing, Yang, Fan, Minyou, Chen, Ran, Li, Ullah, Irfan, Xu, Shengyou, Mawby, P. A. (Philip A.), 2017. A temperature gradient based Condition Estimation Method for IGBT Module. IEEE Transactions on Power Electronics, 32 (3), pp. 2227-2242
Ortiz Gonzalez, Jose Angel, Alatise, Olayiwola M., Aliyu, Attahir, Rajaguru, Pushparajah, Castellazzi, Alberto, Ran, Li, Mawby, P. A. (Philip A.), Bailey, Chris, 2017. Evaluation of SiC schottky diodes using pressure contacts. IEEE Transactions on Industrial Electronics, 64 (10), pp. 8213-8223
Hamilton, Dean P., Jennings, Michael. R., Pérez-Tomás, Amador, Russell, Stephen, Hindmarsh, Steven A., Fisher, Craig A., Mawby, Philip. A., 2017. High temperature electrical and thermal aging performance and application considerations for SiC power DMOSFETs. IEEE Transactions on Power Electronics, 32 (10), pp. 7967-7978
Ortiz Gonzalez, Jose Angel, Alatise, Olayiwola M., Hu, Ji, Ran, Li, Mawby, P. A. (Philip A.), 2017. An investigation of temperature sensitive electrical parameters for SiC power MOSFETs. IEEE Transactions on Power Electronics, 32 (10), pp. 7954-7966
Chan, Chun Wa, Mawby, P. A., Gammon, P. M., 2016. Analysis of linear-doped Si/SiC power LDMOSFETs based on device simulation. IEEE Transactions on Electron Devices, 63 (6), pp. 2442-2448
Li, Fan, Sharma, Yogesh K., Walker, David, Hindmarsh, Steven A., Jennings, Michael, Martin, David, Fisher, Craig A., Gammon, P. M., Pérez-Tomás, Amador, Mawby, P. A., 2016. 3C-SiC transistor with Ohmic contacts defined at room temperature. IEEE Electron Device Letters
Ortiz Gonzalez, Jose Angel, Aliyu, A. M., Alatise, Olayiwola M., Castellazzi, A., Ran, Li, Mawby, P. A. (Philip A.), 2016. Development and characterisation of pressed packaging solutions for high-temperature high-reliability SiC power modules. Microelectronics Reliability, 64, pp. 434-439
Rong, Hua, Sharma, Yogesh K., Dai, Tian Xiang, Li, Fan, Jennings, M. R., Russell, Stephen, Martin, David, Mawby, P. A. (Philip A.), 2016. High temperature nitridation of 4H-SiC MOSFETs. Materials Science Forum, 858, pp. 623-626
Li, Fan, Sharma, Yogesh K., Jennings, M. R., Pérez-Tomás, Amador, Shah, V. A., Rong, Hua, Russell, Stephen, Martin, David, Mawby, P. A. (Philip A.), 2016. Improved channel mobility by oxide nitridation for N-Channel MOSFET on 3C-SiC(100)/Si. Materials Science Forum, 858, pp. 667-670
Tang, Yuan, Ran, Li, Alatise, Olayiwola M., Mawby, P. A., 2016. Improved testing capability of the model assisted testing scheme for modular multilevel converter. IEEE Transactions on Power Electronics, 31 (11), pp. 7823-7836
Hamilton, Dean P., Hindmarsh, Steven A., York, Stephen J., Walker, David, Russell, Stephen, Jennings, M. R., Fisher, Craig A., Mawby, P. A. (Philip A.), 2016. Ohmic contact reliability of commercially available SiC MOSFETs isothermally aged for long periods at 300°C in air. Materials Science Forum, 858, pp. 557-560
Chan, Chun Wa, Bonyadi, Yeganeh, Mawby, P. A. (Philip A.), Gammon, P. M., 2016. Si/SiC substrates for the implementation of linear-doped power LDMOS studied with device simulation. Materials Science Forum, 858, pp. 844-847
Lai, Wei, Mawby, P. A. (Philip A.), Qin, Han, Alatise, Olayiwola M., Xu, Shengyou, Chen, Minyou, Ran, Li, 2016. Study on the lifetime characteristics of power modules under power cycling conditions. IET Power Electronics, 9 (5), pp. 1045-1052
Tang, Yuan, Ran, Li, Alatise, Olayiwola M., Mawby, P. A. (Philip A.), 2016. Capacitor selection for modular multilevel converter. IEEE Transactions on Industry Applications, 52 (4), pp. 3279-3293
Lai, Wei, Chen, Mingyou, Ran, Li, Alatise, Olayiwola M., Xu, Shengyou, Mawby, P. A. (Philip A.), 2016. Low ?Tj stress cycle effects in IGBT power module die-attach lifetime modelling. IEEE Transactions on Power Electronics, 31 (9), pp. 6575-6585
Hu, Ji, Alatise, Olayiwola M., Ortiz Gonzalez, Jose Angel, Alexakis, Petros, Ran, Li, Mawby, P. A., 2016. Robustness and balancing of parallel connected power devices : SiC vs. CoolMOS. IEEE Transactions on Industrial Electronics, 63 (4), pp. 2092-2102
Tang, Yuan, Ran, Li, Alatise, Olayiwola M., Mawby, P. A. (Philip A.), 2016. A model assisted testing scheme for modular multilevel converter. IEEE Transactions on Power Electronics, 31 (1), pp. 165-176
Hamilton, Dean P., Jennings, Michael R., Pérez-Tomás, Amador, Russell, Stephen A. O., Hindmarsh, Steven A., Fisher, Craig A., Mawby, P. A. (Philip A.), 2016. High temperature electrical and thermal aging performance and application considerations for SiC power DMOSFETs. IEEE Transactions on Power Electronics, 32 (10), pp. 7967-7979
Bonyadi, Yeganeh, Gammon, P. M., Bonyadi, Roozbeh, Shah, V. A., Fisher, C. A., Martin, David M., Mawby, Philip A., 2016. Characterization of 4H-SiC PiN diodes formed on defects identified by PL imaging. Materials Science Forum, 858, pp. 405-409
Jahdi, Saeed, Alatise, Olayiwola M., Ran, Li, Mawby, P. A. (Philip A.), 2015. Accurate analytical modeling for switching energy of PiN diodes reverse recovery. IEEE Transactions on Industrial Electronics, 62 (3), pp. 1461-1470
Jahdi, Saeed, Alatise, Olayiwola M., Ran, Li, Mawby, P. A. (Philip A.), 2015. Analytical modeling of switching energy of silicon carbide Schottky diodes as functions of dIDS/dt and temperature. IEEE Transactions on Power Electronics, 30 (6), pp. 3345-3355
Jahdi, Saeed, Alatise, Olayiwola M., Bonyadi, Roozbeh, Alexakis, Petros, Fisher, Craig A., Ortiz Gonzalez, Jose Angel, Ran, Li, Mawby, P. A. (Philip A.), 2015. An analysis of the switching performance and robustness of power MOSFETs body diodes : a technology evaluation. IEEE Transactions on Power Electronics, 30 (5), pp. 2383-2394
Sharma, Yogesh K., Li, Fan, Jennings, M. R., Fisher, Craig A., Pérez-Tomás, Amador, Thomas, Stephen M., Hamilton, Dean P., Russell, Stephen, Mawby, P. A., 2015. High-temperature (1200?1400°C) dry oxidation of 3C-SiC on silicon. Journal of Electronic Materials, 44 (11), pp. 4167-4174
Chan, Chun Wa, Gammon, P. M., Shah, V. A., Chen, Han, Jennings, M. R., Fisher, Craig A., Pérez-Tomás, Amador, Myronov, Maksym, Mawby, P. A. (Philip A.), 2015. Simulations of a lateral PiN diode on SiSiC substrate for high temperature applications. Materials Research Forum, 821 (7), pp. 624-627
Colston, Gerard B., Myronov, Maksym, Rhead, Stephen, Shah, V. A., Sharma, Yogesh K., Mawby, P. A. (Philip A.), Leadley, D. R. (David R.), 2015. Si1-xCx/Si(001) heterostructures for use in Schottky diode rectifiers demonstrating high breakdown voltage and negligible leakage current. Materials Science Forum, 821-823, pp. 571-574
Jahdi, Saeed, Alatise, Olayiwola M., Ortiz Gonzalez, Jose Angel, Bonyadi, Roozbeh, Ran, Li, Mawby, P. A. (Philip A.), 2015. Temperature and switching rate dependence of crosstalk in Si-IGBT and SiC power modules. IEEE Transactions on Industrial Electronics, 63 (2), pp. 849-863
Jahdi, Saeed, Alatise, Olayiwola M., Alexakis, Petros, Ran, Li, Mawby, P. A. (Philip A.), 2015. The impact of temperature and switching rate on the dynamic characteristics of silicon carbide schottky barrier diodes and MOSFETs. IEEE Transactions on Industrial Electronics, 62 (1), pp. 163-171
Li, Fan, Sharma, Yogesh K., Shah, V. A., Jennings, M. R., Pérez-Tomás, Amador, Myronov, Maksym, Fisher, Craig A., Leadley, D. R. (David R.), Mawby, P. A. (Philip A.), 2015. Electrical activation of nitrogen heavily implanted 3C-SiC(100). Applied surface science, 353, pp. 958-963
Bonyadi, Roozbeh, Alatise, Olayiwola M., Jahdi, Saeed, Hu, Ji, Ortiz Gonzalez, Jose Angel, Ran, Li, Mawby, P. A., 2015. Compact electrothermal reliability modeling and experimental characterization of bipolar latchup in SiC and CoolMOS power MOSFETs. IEEE Transactions on Power Electronics, 30 (12), pp. 6978-6992
Hu, Ji, Alatise, Olayiwola M., Ortiz Gonzalez, Jose Angel, Bonyadi, Roozbeh, Ran, Li, Mawby, P. A., 2015. The effect of electrothermal nonuniformities on parallel connected SiC power devices under unclamped and clamped inductive switching. IEEE Transactions on Power Electronics, 31 (6), pp. 4526-4535
Jahdi, Saeed, Alatise, Olayiwola M., Fisher, Craig A., Ran, Li, Mawby, P. A. (Philip A.), 2014. An evaluation of silicon carbide unipolar technologies for electric vehicle drive-trains. IEEE Journal of Emerging and Selected Topics in Power Electronics, 2 (3), pp. 517-528
Thomas, S. M., Sharma, Yogesh K., Crouch, M. A., Fisher, Craig A., Pérez-Tomás, Amador, Jennings, M. R., Mawby, P. A. (Philip A.), 2014. Enhanced field effect mobility on 4H-SiC by oxidation at 1500?C. IEEE Journal of the Electron Devices Society, 2 (5), pp. 114-117
Rong, Hua, Sharma, Yogesh K., Liu, Fangjun, Jennings, M. R., Mawby, P. A. (Philip A.), 2014. 4H-SiC Diode Avalanche Breakdown Voltage Estimation by Simulation and Junction Termination Extension Analysis. Materials Science Forum, 778-780, pp. 824-827
Thomas, Stephen M., Jennings, M. R., Sharma, Yogesh K., Fisher, Craig A., Mawby, P. A. (Philip A.), 2014. Impact of the oxidation temperature on the interface trap density in 4H-SiC MOS capacitors. Materials Science Forum, 778-780, pp. 599-602
Alexakis, Petros, Alatise, Olayiwola M., Hu, Ji, Jahdi, Saeed, Ran, Li, Mawby, P. A., 2014. Improved electrothermal ruggedness in SiC MOSFETs compared with silicon IGBTs. IEEE Transactions on Electron Devices, 61 (7), pp. 2278-2286
Fisher, Craig A., Jennings, M. R., Sharma, Yogesh K., Hamilton, Dean P., Gammon, P. M., Pérez-Tomás, Amador, Thomas, Stephen M., Burrows, S. E. (Susan E.), Mawby, P. A. (Philip A.), 2014. Improved performance of 4H-SiC PiN diodes using a novel combined high temperature oxidation and annealing process. IEEE Transactions on Semiconductor Manufacturing, 27 (3), pp. 443-451
Jahdi, Saeed, Alatise, Olayiwola M., Mawby, P. A. (Philip A.), 2014. Temperature and dIDS/dt dependence of the switching energy of SiC schottky diodes in clamped inductive switching applications. Materials Science Forum, 778-780, pp. 816-819
Gammon, P. M., Fisher, Craig A., Shah, V. A., Jennings, M. R., Pérez-Tomás, Amador, Burrows, S. E. (Susan E.), Myronov, Maksym, Leadley, D. R. (David R.), Mawby, P. A. (Philip A.), 2014. The cryogenic testing and characterisation of SiC diodes. Materials Science Forum, 778-780, pp. 863-866
Sharma, Yogesh K., Ahyi, Ayayi C., Isaacs-Smith, Tamara, Modic, Aaron, Xu, Yi, Granfukel, Eric, Jennings, M. R., Fisher, Craig A., Thomas, Stephen M., Mawby, P. A. (Philip A.), Dhar, Sarit, Feldman, Leonard C., Williams, John, 2014. Thin PSG process for 4H-SiC MOSFET. Materials Science Forum, 778-780, pp. 513-516
Jennings, M. R., Fisher, Craig A., Walker, David, Sánchez, Ana M., Pérez-Tomás, Amador, Hamilton, Dean P., Gammon, P. M., Burrows, S. E. (Susan E.), Thomas, Stephen M., Sharma, Yogesh K., Li, Fan, Mawby, P. A. (Philip A.), 2014. On the Ti3SiC2 metallic phase formation for robust p-type 4H-SiC ohmic contacts. Materials Science Forum, 778-780, pp. 693-696
Huang, Hui, Mawby, P. A. (Philip A.), 2013. A lifetime estimation technique for voltage source inverters. IEEE Transactions on Power Electronics, 28 (8), pp. 4113-4119
Jennings, M. R., Pérez-Tomás, Amador, Severino, Andrea, Ward, Peter, Bashir, Arif, Fisher, Craig A., Thomas, Stephen M., Gammon, P. M., Donnellan, Benedict T., Rong, Hua, Hamilton, Dean P., Mawby, P. A. (Philip A.), 2013. Innovative 3C-SiC on SiC via direct wafer bonding. Materials Science Forum, 740-742, pp. 271-274
Gammon, P. M., Pérez-Tomás, Amador, Shah, V. A., Vavasour, O., Donchev, E., Pang, J. S., Myronov, Maksym, Fisher, Craig A., Jennings, M. R., Leadley, D. R. (David R.), Mawby, P. A. (Philip A.), 2013. Modelling the inhomogeneous SiC Schottky interface. Journal of Applied Physics, 114 (22)
Gammon, P. M., Pérez-Tomás, Amador, Shah, V. A., Vavasour, O., Donchev, E., Pang, J. S., Myronov, Maksym, Fisher, Craig A., Jennings, M. R., Leadley, D. R. (David R.), Mawby, P. A. (Philip A.), 2013. Modelling the inhomogeneous SiC Schottky interface. Journal of Applied Physics, 114 (22)
Gammon, P. M., Pérez-Tomás, Amador, Jennings, M. R., Sánchez, Ana M., Fisher, Craig A., Thomas, Stephen M., Donnellan, Benedict T., Mawby, P. A. (Philip A.), 2013. Bipolar conduction across a wafer bonded p-n Si/SiC heterojunction. Materials Science Forum, 740-742, pp. 1006-1009
Gammon, P. M., Donchev, E., Pérez-Tomás, Amador, Shah, V. A., Pang, J. S., Petrov, P. K. (Peter K.), Jennings, M. R., Fisher, Craig A., Mawby, P. A. (Philip A.), Leadley, D. R. (David R.), Alford, Neil McN., 2012. A study of temperature-related non-linearity at the metal-silicon interface. Journal of Applied Physics, Vol.112
Ran, Li, Mawby, P. A. (Philip A.), McKeever, Paul, Konaklieva, Syliva, 2012. Condition monitoring of power electronics for offshore wind. Engineering & Technology Reference
Xiang, Dawei, Ran, Li, Tavner, Peter, Yang, Shaoyong, Bryant, Angus, Mawby, P. A. (Philip A.), 2012. Condition monitoring power module solder fatigue using inverter harmonic identification. IEEE Transactions on Power Electronics, 27 (1), pp. 235-247
Swan, I. R. (Ian R.), Bryant, Angus T., Mawby, P. A. (Philip A.), 2012. Fast 3D thermal simulation of power module packaging. International Journal of Numerical Modelling : Electronic Networks, Devices and Fields, Vol.25 (No.4), pp. 378-399
Alatise, Olayiwola M., Parker-Allotey, Nii-Adotei, Mawby, P. A. (Philip A.), 2012. Modeling the electrothermal stability of power MOSFETs during switching transients. IEEE Electron Device Letters, 33 (7), pp. 1039-1041
Donnellan, B. T., Roberts, G. J., Mawby, P. A. (Philip A.), Bryant, Angus T., 2012. Modelling of current sharing in paralleled current limiting superjunction MOSFETs with common gate drives. Microelectronics Reliability, Vol.52 (No.3), pp. 497-502
Fisher, Craig A., Jennings, M. R., Bryant, Angus T., Pérez-Tomás, Amador, Gammon, P. M., Brosselard, Pierre, Godignon, Phillippe, Mawby, P. A. (Philip A.), 2012. Physical modelling of 4H-SiC PiN diodes. Materials Science Forum, 717-720, pp. 993-996
Alatise, Olayiwola M., Parker-Allotey, Nii-Adotei, Hamilton, Dean P., Mawby, P. A. (Philip A.), 2012. The impact of parasitic inductance on the performance of silicon-carbide Schottky barrier diodes. IEEE Transactions on Power Electronics, Vol.27 (No.8), pp. 3826-3833
Jennings, M. R., Pérez-Tomás, Amador, Bashir, A., Sánchez, Ana M., Severino, A., Ward, Peter J., Thomas, S. M., Fisher, Craig A., Gammon, P. M., Zabala, M., Burrows, S. E., Donnellan, B., Hamilton, D. P., Walker, David, Mawby, P. A., 2012. Bow free 4'' diameter 3C-SiC Epilayers formed upon wafer-bonded Si/SiC substrates. ECS Solid State Letters, 1 (6), pp. P85-P88
Yang, Shaoyong, Bryant, Angus T., Mawby, P. A., Xiang, Dawei, Ran, Li, Tavner, Peter J., 2011. An industry-based survey of reliability in power electronic converters. IEEE Transactions on Industry Applications, Vol.47 (No.3), pp. 1441-1451
Gammon, P. M., Pérez-Tomás, Amador, Jennings, M. R., Guy, O. J., Rimmer, N., Llobet, J., Mestres, Narcis, Godignon, P., Placidi, Marcel, Zabala, M., Covington, James A., Mawby, P. A., 2011. Characterisation of HfO2/Si/SiC MOS capacitors. Materials Science Forum, Vol.679-680, pp. 674-677
Bryant, Angus T., Yang, Shaoyong, Mawby, P. A. (Philip A.), Xiang, Dawei, Ran, Li, Tavner, Peter, Palmer, Patrick R., 2011. Investigation into IGBT dV/dt during turn-off and its temperature dependence. IEEE Transactions on Power Electronics, 26 (10), pp. 3019-3031
Alatise, Olayiwola M., Parker-Allotey, Nii-Adotei, Jennings, M. R., Mawby, P. A. (Philip A.), Kennedy, Ian, Petkos, George, 2011. Modeling the impact of the trench depth on the gate-drain capacitance in power MOSFETs. IEEE Electron Device Letters, Vol.32 (No.9), pp. 1269-1271
Xiang, D. W., Ran, Li, Tavner, P. J., Bryant , A., Yang, S. Y., Mawby, P. A. (Philip A.), 2011. Monitoring solder fatigue in a power module using case-above-ambient temperature rise. IEEE Transactions on Industry Applications, 47 (6), pp. 2578-2591
Yang, Shaoyong, Xiang, Dawei, Bryant, Angus T., Mawby, P. A., Ran, Li, Tavner, Peter J., 2010. Condition monitoring for device reliability in power electronic converters : a review. IEEE Transactions on Power Electronics, 25 (11), pp. 2734-2752
Gammon, P. M., Pérez-Tomás, Amador, Jennings, M. R., Guy, O. J., Rimmer, N., Llobet, J., Mestres, N., Godignon, P., Placidi, M., Zabala, M., Covington, James A., Mawby, P. A., 2010. Integration of HfO2 on Si/SiC heterojunctions for the gate architecture of SiC power devices. Applied Physics Letters, Vol.97 (No.1)
Gammon, P. M., Pérez-Tomás, Amador, Jennings, M. R., Shah, V. A., Boden, S. A., Davis, M. C., Burrows, S. E., Wilson, Neil R., Roberts, G. J., Covington, James A., Mawby, P. A., 2010. Interface characteristics of n-n and p-n Ge/SiC heterojunction diodes formed by molecular beam epitaxy deposition. Journal of Applied Physics, Vol.107 (No.12)
Gammon, P. M., Pérez-Tomás, Amador, Shah, V. A., Roberts, G. J., Jennings, M. R., Covington, James A., Mawby, P. A., 2009. Analysis of inhomogeneous Ge/SiC heterojunction diodes. Journal of Applied Physics, Vol.106 (No.9)
Pérez-Tomás, Amador, Lodzinski, M., Guy, O. J., Jennings, M. R., Placidi, M., Llobet, J., Gammon, P. M., Davis, M. C., Covington, James A., Burrows, S. E., Mawby, P. A., 2009. Si/SiC bonded wafer: a route to carbon free SiO2 on SiC. Applied Physics Letters, Vol.94 (No.10)
Gammon, P. M., Pérez-Tomás, Amador, Jennings, M. R., Roberts, G. J., Davis, M. C., Shah, V. A., Burrows, S. E., Wilson, Neil R., Covington, James A., Mawby, P. A., 2008. Characterization of n-n Ge/SiC heterojunction diodes. Applied Physics Letters, Vol.93 (No.11)
Pérez-Tomás, Amador, Jennings, M. R., Mawby, P. A. (Philip A.), Millan, J., Godignon, P., Montserrat, Josep, Rossinyol, E., Vennegues, P., Stoemenos, J., 2008. Interfacial properties of thermally oxidized Ta2Si on Si. Surface and Interface Analysis, 40 (8), pp. 1164-1167
Pérez-Tomás, Amador, Jennings, M. R., Gammon, P. M., Roberts, G. J., Mawby, P. A. (Philip A.), Millan, J., Godignon, P., Montserrat, J., Mestres, N., 2008. SiC MOSFETs with thermally oxidized Ta2Si stacked on SiO2 as high-k gate insulator. Microelectronic Engineering, 85 (4), pp. 704-709
Jennings, M. R., Pérez-Tomás, Amador, Guy, O. J., Hammond, Richard, Burrows, S. E., Gammon, P. M., Lodzinski, M., Covington, James A., Mawby, P. A., 2008. Si/SiC heterojunctions fabricated by direct wafer bonding. Electrochemical and Solid State Letters, Vol.11 (No.11), pp. H306-H308
Jennings, M. R., Pérez-Tomás, Amador, Davies, M., Walker, David, Zhu, L., Losee, P., Huang, W., Balachandran, S., Guy, O. J., Covington, James A., Chow, T. P., Mawby, P. A., 2007. Analysis of Al/Ti, Al/Ni multiple and triple layer contacts to p-type 4H-SiC. Solid-State Electronics, Vol.51 (No.5), pp. 797-801
Pérez-Tomás, Amador, Jennings, M. R., Davis, M. C., Covington, James A., Mawby, P. A., Shah, V. A., Grasby, T., 2007. Characterization and modeling of n-n Si/SiC heterojunction diodes. Journal of Applied Physics, Vol.102 (No.1)
Pérez-Tomás, Amador, Jennings, M. R., Davis, M., Shah, V. A., Grasby, T., Covington, James A., Mawby, P. A., 2007. High doped MBE Si p-n and n-n heterojunction diodes on 4H-SiC. MICROELECTRONICS JOURNAL, 38 (12), pp. 1233-1237
Pérez-Tomás, Amador, Brosselard, P., Godignon, P., Millan, J., Mestres, N., Jennings, M. R., Covington, James A., Mawby, P. A., 2006. Field-effect mobility temperature modeling of 4H-SiC metal-oxide-semiconductor transistors. JOURNAL OF APPLIED PHYSICS, 100 (11)
Forsyth, A. J., Yang, S. Y., Mawby, P. A. (Philip A.), Igic, P., 2006. Measurement and modelling of power electronic devices at cryogenic temperatures. IEE PROCEEDINGS-CIRCUITS DEVICES AND SYSTEMS, 153 (5), pp. 407-415