Publications
*Please note the list below is not updated, for more up to date lists please consult my Google Scholar, Scopus or ORCID*
Selected Refereed Journal Publications
1.1Turner K., Colston G., Stokeley K., Newton A., Renz A., Antoniou M., Gammon P., Mawby P., Shah V.A.
"Effect of Mesa Sidewall Angle on 4H-Silicon Carbide Trench Filling Epitaxy Using Trichlorosilane and Hydrogen Chloride", Adv. Mater. Interfaces (2024), vol. TBC
1.2Colston G., Turner K., Renz A., Gammon P., Antoniou M., Mawby P.A., Shah V.A.
"Epitaxial trench refill of 4H-SiC by chlorinated chemistry"
Appl. Phys. Lett. 124, 192102 (2024)
1.3Colston G., Turner K., Renz A., Perera K., Gammon P.M., Antoniou M., Shah V.A.
"Three-Dimensional Epitaxy of Low-Defect 3C-SiC on a Geometrically Modified Silicon Substrate"
Materials. (2024), vol. 17, 7 , 1587
1.4Kotagama V., Renz A.B., Kilchytska V., Flandre D., Qi Y., Shah V.A., Antoniou M., Gammon P.M.
"Investigations into the Impact of Deposition or Growth Techniques on the Field Oxide TID Response for 4H-SiC Space Applications", Solid State Phenomena (2024), vol. 362, 83-88
1.5Colston G., Renz A.B., Perera K., Gammon P.M., Antoniou M., Mawby P.A., Shah V.A., "Suppressing the Memory Effect in Al Doped 3C-SiC Grown Using Chlorinated Chemistry", Solid State Phenomena (2024), vol. 362, 77-81
1.6Villeneuve-Faure C., Boumaarouf A., Shah V.A., Gammon P.M., Lüders U., Coq Germanicus R.
"SiC Doping Impact during Conducting AFM under Ambient Atmosphere"
Materials. (2023), vol. 16, 15, 5401
1.7Zhang L., Dai T., Gammon P.M., Shah V.A., Mawby P.A., Antoniou M.,
"Simulation Study of a 650V Hybrid-Channel SiC Trench MOSFET with Improved On-State Performance"
Power Electron. Devices Components. (2023), vol. 4, 100031.
1.8Renz A.B., Shah V.A., Vavasour O.J., Baker G.W.C., Bonyadi Y., Sharma Y., Pathirana V., Trajkovic T., Mawby P., Antoniou M., Gammon P.M.
"The Optimization of 3.3 kV 4H-SiC JBS Diodes", IEEE Trans. Electron Devices (2022), vol. 69, 1, 298-303
1.9Lioliou G., Renz A.B., Shah V.A., Gammon P.M., Barnett A.M.
“Mo/4H-SiC Schottky diodes for room temperature X-ray and γ-ray spectroscopy"
Nucl Instrum Methods Phys Res Sect A (2022), vol. 1027, 166330
1.10Baker G.W.C., Gammon P.M., Renz A.B., Vavasour O., Chan C.W., Qi Y., Dai T., Li F., Zhang L., Kotagama V., Shah V.A., Mawby P.A., Antoniou M.
"Optimization of 1700-V 4H-SiC Semi-Superjunction Schottky Rectifiers With Implanted P-Pillars for Practical Realization", IEEE Trans. Electron Devices (2022), vol. 69, 4, 1924-1930
1.11Field D.E., Pomeroy J.W., Gity F., Schmidt M., Torchia P., Li F., Gammon P.M., Shah V.A., Kuball M.
"Thermal characterization of direct wafer bonded Si-on-SiC",
Appl Phys Lett (2022), vol. 120, 11 , 113503
1.12Renz A.B., Vavasour O.J., Gammon P.M., Li F., Dai T., Baker G.W.C., Grant N.E., Murphy J.D., Mawby P.A., Gott J., Shah V.A.,
"Improved Reliability of 4H-SiC Metal-Oxide-Semiconductor Devices Utilising Atomic Layer Deposited Layers with Enhanced Interface Quality",ECS Transactions (2022), vol. 108, 2, 43-49
1.13Colston G., Newell O., Rhead S.D., Shah V.A., Myronov M.
"Strain mapping of silicon carbon suspended membranes",
Materials & Design. (2021), vol. 211, 110135
1.14F. Li, A.B. Renz, A. Perez-Tomas, V.A. Shah, P.M. Gammon, F.L. Via, M. Jennings, P.A. Mawby
“A study on free-standing 3C-SiC bipolar power diodes”
Applied Physics Letters, 2021, 118(24), pp. 1ENG, 242101
1.15A.B. Renz, F. Li, O. Vavasour, P.M. Gammon, T. Dai, G. Baker, F.L. Via, M. Zielinski,L. Zhang, N.E. Grant, J.D. Murphy, P.A. Mawby, M. Jennings, V.A. Shah.
“Initial investigations into the MOS interface of freestanding 3C-SiC layers for device applications”
Semiconductor Science and Technology, 2021, 36(5), 055006
1.16T. Dai, L. Zhang, O. Vavasour, A. Renz, V.A. Shah, M. Antoniou, P. Mawby, and P. M. Gammon, "A Compact Trench Assisted Space-Modulated JTE Design for High-Voltage 4H-SiC Devices," IEEE Transactions on Electron Devices, vol. 68, no. 3, pp. 1162-1167, 2021
1.17A. Renz, O. Vavasour, P. M. Gammon, F. Li, T. Dai, M. Antoniou, G. Baker, E. Bashar, N. Grant, J.D. Murphy, P.A. Mawby, V.A. Shah "The improvement of atomic layer deposited SiO2/4H-SiC interfaces via a high temperature forming gas anneal," Materials Science in Semiconductor Processing, vol. 122, p. 105527, 2021.
1.18G. Baker, C. Chan, A. Renz, Y. Qi, T. Dai, F. Li, V.A. Shah, P. Mawby, M. Antoniou, and P. M. Gammon, "Optimization of 1700-V 4H-SiC Superjunction Schottky Rectifiers With Implanted P-Pillars for Practical Realization," IEEE Transactions on Electron Devices, 2021.
1.19A. Renz, V. A. Shah, O. Vavasour, Y. Bonyadi, F. Li, T. Dai, G. Baker, S. Hindmarsh, Y. Han, M. Walker, Y. Sharma, Y. Liu, B. Raghothamachar, M. Dudley, P. Mawby, and P. M. Gammon, "The improvement of Mo/4H-SiC Schottky diodes via a P2O5 surface passivation treatment," Journal of Applied Physics, vol. 127, no. 2, p. 025704, 2020.
1.20F. Li, Q. Song, A. Perez-Tomas, V.A. Shah, Y. Sharma, D. Hamilton, C. Fisher, P. M. Gammon, M. Jennings, and P. Mawby, "A first evaluation of thick oxide 3C-SiC MOS capacitors reliability," IEEE Transactions on Electron Devices, vol. 67, no. 1, pp. 237-242, 2019.
1.21L.Q. Zhou, G. Colston, M. Myronov, D.R. Leadley, O. Trushkevych, V.A. Shah, R.S. Edwards.
“Ultrasonic Inspection and Self-Healing of Ge and 3C-SiC Semiconductor Membranes”
Journal of Microelectromechanical Systems, vol. 29, no. 3, pp. 370-377, June 2020
1.22J.D. Murphy, A.I. Pointon, N.E. Grant, V.A. Shah, M Myronov, V.V. Voronkov, R.J. Falster.
“Minority carrier lifetime in indium doped silicon for photovoltaics”
Progress in Photovoltaics: Research and Applications, Vol. 27, Issue 10, Pages 844 - 8551 October 2019
1.23G. Colston, S.D. Rhead, V.A. Shah, O.J. Newell, I.P. Dolbnya, D.R. Leadley, M. Myronov
“Mapping the strain and tilt of a suspended 3C-SiC membrane through micro X-ray diffraction”
Materials & Design, Volume 103, Pages 244-248, 5 August 2016
1.24D. Gunnarsson, J. S. Richardson-Bullock, M. J. Prest, H. Q. Nguyen, A. V. Timofeev, V. A. Shah, T. E. Whall, E. H. C. Parker, D. R. Leadley, M. Myronov & M. Prunnila
“Interfacial Engineering of Semiconductor–Superconductor Junctions for High Performance Micro-Coolers”
Scientific Reports, Article number: 17398 (2015)
1.25H. Chen, P. M. Gammon, V.A. Shah, C.A. Fisher, C. Chan, S. Jahdi, D.P. Hamilton, M. R. Jennings, M. Myronov, D. R. Leadley, P. A. Mawby
"Cryogenic Characterization of Commercial SiC Power MOSFETs"
Materials Science Forum, Vols. 821-823, pp. 777-780, Jun. 2015
1.26Z. Mohammadi, V. A. Shah, M. Jennings, C. Fisher, P. Mawby
"Elimination of Microtrenching in Trenches in 4H-Silicon Carbide Using Shadow Masking"
Materials Science Forum, Vols. 821-823, pp. 533-536, Jun. 2015
1.27G. Colston, M. Myronov, S. Rhead, V. Shah, Y. Sharma, P. Mawby, D. Leadley
"Si1-xCx/Si(001) Heterostructures for Use in Schottky Diode Rectifiers Demonstrating High Breakdown Voltage and Negligible Leakage Current”
Materials Science Forum, Vols. 821-823, pp. 571-574, Jun. 2015
1.28F. Li, Y. Sharma, V. A. Shah, M. Jennings, A. Pérez-Tomás, M. Myronov, C. Fisher, D. R. Leadley, P. Mawby
“Electrical activation of nitrogen heavily implanted 3C-SiC(1 0 0)”
Applied Surface Science, Volume 353, 30 October 2015, Pages 958-963
1.29C.W. Chan, P. M. Gammon, V. A. Shah, H. Chen, M.R. Jennings, C.A. Fisher, A. Pérez-Tomás, M. Myronov, P.A. Mawby
“Simulations of a Lateral PiN Diode on Si/SiC Substrate for High Temperature Applications”
Materials Science Forum, Vols. 821-823, pp. 624-627, June. 2015
1.30V.A. Shah, S. D. Rhead, J. Finch, M. Myronov, J.S. Reparaz, R. J. Morris, N. R. Wilson, V. Kachkanov, I. P. Dolbnya, J. E. Halpin, D. Patchett, P. Allred, G. Colston, K. J. S. Sawhney, C.M. Sotomayor Torres, and D.R. Leadley
”Electrical properties and strain distribution of Ge suspended structures”.
Solid State Electronics, Volume 108, June 2015, Pages 13-18
1.31M.J. Prest, J.S. Richardson-Bullock, Q.T. Zhao, J.T. Muhonen, D. Gunnarsson, M. Prunnila, V.A. Shah, T.E. Whall, E.H.C. Parker, D.R. Leadley,
”Superconducting platinum silicide for electron cooling in silicon”.
Solid State Electronics, Volume 103, January 2015, Pages 15-18
1.32J.S. Richardson-Bullock, M.J. Prest, V.A. Shah, D. Gunnarsson, M. Prunnila, A. Dobbie, M. Myronov, R.J.H. Morris, T.E. Whall, E.H.C. Parker, D.R. Leadley,
”Comparison of electron-phonon and hole-phonon energy loss rates in silicon”.
Solid State Electronics, Volume 103, January 2015, Pages 40-43
1.33O. Trushkevych, V.A. Shah, M. Myronov, J.E. Halpin, S.D. Rhead, M.J. Prest, D.R. Leadley, R.S. Edwards
Laser-vibrometric ultrasonic characterization of resonant modes and quality factors of Ge membranes
Science and Technology of Advanced Materials, 15, 025004 (2014)
1.34V.A. Shah, S.D. Rhead, J.E. Halpin, O. Trushkevych, E. Chávez-Ángel, A. Shchepetov, V. Kachkanov, N.R. Wilson, M. Myronov, J.S. Reparaz, R.S. Edwards, M.R. Wagner, F. Alzina, I.P. Dolbnya, D.H. Patchett, P.S. Allred, M.J. Prest, P.M. Gammon, M. Prunnila, T.E. Whall, E.H.C. Parker, C.M. Sotomayor Torres, D.R. Leadley
High quality single crystal Ge nano-membranes for opto-electronic integrated circuitry
Journal of Applied Physics, 115, 144307 (2014).
1.35V.A. Shah, M. Myronov, S.D. Rhead, J.E. Halpin, A. Shchepetov, M.J. Prest, M. Prunnila, T.E. Whall, E.H.C. Parker, D.R. Leadley
Flat single crystal Ge membranes for sensors and opto-electronic integrated circuitry
Solid-State Electron., 98, 93 (2014)
1.36S.D. Rhead, J.E. Halpin, V.A. Shah, M. Myronov, D.H. Patchett, P.S. Allred, V. Kachkanov, I.P. Dolbnya, J.S. Reparaz, N.R. Wilson, C.M. Sotomayor Torres, D.R. Leadley
Tensile strain mapping in flat germanium membranes
Applied Physics Letters, 104, 172107 (2014)
1.37M. Myronov, C. Morrison, J. Halpin, S. Rhead, C. Casteleiro, J. Foronda, V.A. Shah, D. Leadley
An extremely high room temperature mobility of two-dimensional holes in a strained Ge quantum well heterostructure grown by reduced pressure chemical vapor deposition
Japanese Journal of Applied Physics, 53, 04EH02 (2014)
1.38C. Wongwanitwattana, V.A. Shah, M. Myronov, E.H.C. Parker, T. Whall, D.R. Leadley
Precision plasma etching of Si, Ge, and Ge:P by SF6 with added O2
Journal of Vacuum Science & Technology A, 32, 031302 (2014)
1.39P.M. Gammon, C. A. Fisher, V.A. Shah, M.R. Jennings, A. Pérez-Tomás, S. E. Burrows, M. Myronov, D.R. Leadley, P.A. Mawby
The cryogenic testing and characterisation of SiC diodes
Materials Science Forum, 778 – 780, 863-866 (2014)
1.40P.M. Gammon, A. Pérez-Tomás, V.A. Shah, O. Vavasour, E. Donchev, J.S. Pang, M. Myronov, C.A. Fisher, M.R. Jennings, D.R. Leadley, P.A. Mawby
Modelling the inhomogeneous SiC Schottky interface
Journal of Applied Physics, 114, 223704 (2013)
1.41V.A. Shah, M. Myronov, A. Dobbie and D.R. Leadley
Introduction of terraces into a reverse linearly graded SiGe buffer on Si(001) substrate and their effect on the buffer's structural properties
ECS Journal of Solid State Science and Technology 2, Q40-44 (2013)
1.42P.M. Gammon, E. Donchev, A. Perez-Tomas, V.A. Shah, J.S. Pang, P.K. Petrov, M.R. Jennings, C.A. Fisher, P.A. Mawby, D. R. Leadley, and N.McN. Alford
A study of temperature-related non-linearity at the metal-silicon interface
Journal of Applied Physics 112, 114513 (2012)
1.43V A Shah, M Myronov, C Wongwanitwatana, L. Bawden, M J Prest, J S Richardson-Bullock, S. Rhead, E H C Parker, T E Whall, D R Leadley.
Electrical isolation of dislocations in Ge layers on Si(001) substrates through CMOS compatible suspended structures
Science and Technology of Advanced Materials 13 055002 (2012)
1.44A. Dobbie, M. Myronov, R.J.H. Morris, A.H.A. Hassan, M.J. Prest, J. S. Richardson-Bullock, V.A. Shah, E.H.C. Parker, T.E. Whall, and D.R. Leadley
Ultra-High Hall Mobility of One Million in a Two-Dimensional Hole Gas in a Strained Germanium Quantum Well
Applied Physics Letters 101, 172108 (2012)
1.45V.A. Shah, A. Dobbie, M. Myronov, D.R. Leadley
Reverse Graded Strain Relaxed SiGe Buffers for CMOS and Optoelectronic Integration
Thin Solid Films 520, 3227–3231 (2012)
1.46M. J. Prest, J.T. Muhonen, M. Prunnila, D. Gunnarsson, V.A. Shah, J S. Richardson-Bullock, A. Dobbie, M. Myronov, R.J.H. Morris, T.E. Whall, E.H.C. Parker and D.R. Leadley.
Strain Enhanced Electron Cooling in a Degenerately Doped Semiconductor
Applied Physics Letters, 99, 251908 (2011) [arXiv:1111.0465]
1.47J. T. Muhonen, M.J. Prest, M. Prunnila, D. Gunnarsson, V. A. Shah, A. Dobbie, M. Myronov, R.J.H. Morris, T.E. Whall, E.H.C. Parker and D.R. Leadley
Strain control of electron-phonon energy loss rate in many-valley semiconductors
Applied Physics Letters 98, 182103 (2011) [arXiv:1101.5889]
1.48A. Pérez-Tomás, M. R. Jennings, P. M. Gammon, V. A. Shah, P. A. Mawby, O. J. Guy, and R. Hammond
Si on SiC, a novel platform for MOS power devices
ESSDERC, Sept 2010, Seville, Spain. (2010)
1.49P. M. Gammon, A. Perez-Tomas, M. R. Jennings, G. J. Roberts, V. A. Shah, J. A. Covington, and P. A. Mawby
Ge/SiC heterojunction diodes - a study in device characteristics with increasing layer thickness and deposition temperature.
ICSCRM, Sept 2009, Nuremburg, Germany. Mat. Sci. For., 645-648, 889 (2010)
1.50C. Shen, T. Trypiniotis, K.Y. Lee, S.N. Holmes, R. Mansell, M. Husain, V. Shah, X.V. Li, H. Kurebayashi, I. Farrer, C.H. de Groot, D.R. Leadley, G. Bell, E.H.C. Parker, T. Whall, D.A. Ritchie, and C.H.W. Barnes
Spin transport in germanium at room temperature
Applied Physics Letters 97, 162104 (2010)
1.51M. Myronov A. Dobbie, V. A. Shah, Xue-Chao Liu, Van H. Nguyen and D. R. Leadley
High quality strained Ge epilayers on a Si0.2Ge0.8/Ge/Si(100) global strain-tuning platform grown by reduced pressure chemical vapour deposition
Electrochemical and Solid-State Letters 13, H388-H390 (2010)
1.52V.A. Shah, A. Dobbie, M. Myronov, D.R. Leadley
Effect of layer thickness on structural quality of Ge epilayers grown directly on Si(001)
Thin Solid Films 519, 7911–7917 (2011)
1.53V.A. Shah, A. Dobbie, M. Myronov, D.R. Leadley
High quality relaxed Ge layers grown directly on a Si (001) substrate.
Solid State Electronics 62, 189-194 (2011)
1.54M. Myronov, V.A. Shah, A. Dobbie, Xue-Chao Liu,Van H. Nguyen, D.R. Leadley and E.H.C. Parker
Highly strained Si epilayers grown on SiGe/Si(100) virtual substrate by Reduced Pressure Chemical Vapour Deposition
Physica Status Solidi C, 8, 952-955 (2011)
1.55P. M. Gammon, A. Perez-Tomas, M. R. Jennings, V. A. Shah, S. A. Boden, .M. C. Davis, S. E. Burrows, G. J. Roberts, J. A. Covington, and P. A. Mawby
Interface characteristics of n-n and p-n Ge/SiC heterojunction diodes formed by MBE deposition
J. Appl. Phys. 107, 124512 (2010)
1.56V.A. Shah, A. Dobbie, M. Myronov, D.R. Leadley
Reverse graded SiGe/Ge/Si buffers for high composition virtual substrates
Journal of Applied Physics 107, 064304 (2010)
1.57P. M. Gammon, A. Perez-Tomas, M. R. Jennings, G. J. Roberts, V. A. Shah, J. A. Covington, and P. A. Mawby
Analysis of inhomogeneous Ge/SiC heterojunction diodes
J. Appl. Phys. 106, 093708 (2009)
1.58V. A. Shah, A. Dobbie, M. Myronov, D. R. Leadley, D. J. F. Fulgoni, L. J. Nash
Reverse graded relaxed buffers for high Ge content SiGe virtual substrates
Applied Physics Letters 93, 192103 (2008)
1.59P. M. Gammon, A. Perez-Tomas, M. R. Jennings, G. J. Roberts, M. C. Davis, V. A. Shah, S. E. Burrows, N. R. Wilson, J. A. Covington, and P. A. Mawby
Characterization ofn-nGe/SiC heterojunction diodes
Applied Physics Letters 93 (2008).
1.60A. Perez-Tomas, M. R. Jennings, M. Davis, V. Shah, T. Grasby, J. A. Covington, and P. A. Mawby
High doped MBE Si p–n and n–n heterojunction diodes on 4H-SiC
Microelectronics Journal 38, 1233-1237 (2007).
1.61A. Pérez-Tomás, M. R. Jennings, M. Davis, V. Shah, T. Grasby, J. A. Covington and P. A. Mawby
Characterisation of p-n and n-n heterojunction diodes with high doped MBE Si on 4H-SiC
Proceedings of Workshop on Compound Semiconductor Devices and Integrated Circuits in Europe (WOCSDICE) 2007, May 20-23, 2007, Venice, Italy
1.62A. Pérez-Tomás, M. R. Jennings, M. Davis, J. A. Covington, P. A. Mawby, V. Shah, and T. Grasby, Characterization and modeling ofn-nSi/SiC heterojunction diodes
Journal of Applied Physics 102, 5 (2007).
Book Chapters
Leadley, D. R. (David R.), Prest, M. J. (Martin J.), Ahopelto, Jouni, Brien, Tom, Gunnarsson, David, Mauskopf, Phil, Muhonen, Juha, Myronov, Maksym, Nguyen, Hung, Parker, Evan H. C., Prunnila, Mika, Richardson-Bullock, J. S., Shah, V. A., Whall, Terry E., Zhao, Q. T., 2014. “Silicon-based cooling elements”. In Balestra, Francis (ed.), Beyond CMOS Nanodevices, Wiley-ISTE, pp. 303-330
Leadley, D. R. (David R.), Shah, V. A., Ahopelto, Jouni, Alzina, Francesc, Chávez-Ángel, Emigdio, Muhonen, Juha, Myronov, Maksym, Nassiopoulou, Androula G., Nguyen, Hung, Parker, E. H. C., Pekola, Jukka, Prest, M. J., Prunnila, Mika, Reparaz, Juan Sebastian, Shchepetov, Andrey, Sotomayor-Torres, Clivia, Valalaki, Katerina, Whall, Terry E., 2014. “Thermal isolation through nanostructuring”. In Balestra, Francis (ed.), Beyond-CMOS Nanodevices, Wiley-ISTE, pp. 331-363
Leadley, D. R. (David R.), Dobbie, A. (Andrew), Shah, V. A., Parsons, J., 2010. “Introduction to novel materials for nanoscale CMOS. In Balestra, Francis (ed.), Nanoscale CMOS : innovative materials, modeling, and characterization, London ; Hoboken, NJ, ISTE ; Wiley, pp. 3-22
Leadley, D. R. (David R.), Dobbie, A. (Andrew), Myronov, Maksym, Shah, V. A., Parker, Evan H. C., 2010. Strained Si and Ge channels. In Balestra, Francis (ed.), “Nanoscale CMOS : innovative materials, modeling, and characterization”, London ; Hoboken, NJ, ISTE ; Wiley, pp. 69-126
Proceedings Editor
P. M. Gammon, V. A. Shah, R. A. McMahon, M. R. Jennings, O. Vavasour, F. Padfield and P. A. Mawby, Silicon Carbide and Related Materials 2018, Trans Tech Publications Ltd (Volume 963), 2019.
Conference Contributions
1.1Kotagama V., Renz A.B., Kilchytska V., Flandre D., Qi Y., Shah V.A., Antoniou M., Gammon P.M., "Investigations into the Impact of Deposition or Growth Techniques on the Field Oxide TID Response for 4H-SiC Space Applications" in Solid State Phenomena, 2024, pp 83-88
1.2Colston G., Renz A.B., Perera K., Gammon P.M., Antoniou M., Mawby P.A., Shah V.A., "Suppressing the Memory Effect in Al Doped 3C-SiC Grown Using Chlorinated Chemistry" in Solid State Phenomena, 2024, pp 77-81
1.3Melnyk K., Renz A.B., Cao Q., Gammon P.M., Shah V.A., Lophitis N., Rahimo M., Nistor I., Scognamillo C., Borghese A., Maresca L., Irace A., Antoniou M., "Design and Optimization of 3.3 kV Silicon Carbide Semi-Superjunction Schottky Power Devices" in Proc. Int. Symp. Power Semicond. Dev. ICs, 2024, pp 132-135
1.4Hu Z., Shah V., Lopez G.C., Fisher C., Deb A., Karout M.A., Renz A., Mawby P.A., "Utilising Electroluminescence Spectra Of 4h-Sic Mosfet For Bipolar Degradation Monitoring" in IET. Conf. Proc., 2023, pp 494-500
1.5Renz A.B., Dai T., Antoniou M., Cao Q., Melnyk K., Tian X., Stokeley K., Newton A., Shah V.A., Vavasour O.J., Gammon P.M., "The optimisation, fabrication and comparison of 10 kV-rated 4H-SiC IGBTs and MOSFETs" in IEEE Energy Convers. Congr. Expo., ECCE, 2023, pp 5337-5341
1.6Renz A.B., Cao Q., Vavasour O.J., Gott J., Gammon P.M., Dai T., Baker G.W.C., Mawby P.A., Shah V.A., "High Mobility Silicon Dioxide Layers on 4H-SiC Deposited by Means of Atomic Layer Deposition" in Mater. Sci. Forum, 2023, pp 147-151
1.7Germanicus R.C., Boumaarouf A., Villeneuve-Faure C., Shah V., Gammon P.M., Lüders U., "Selective Oxidation during AFM Electrical Characterization of Doped SiC Layers" in Mater. Sci. Forum, 2023, pp 63-69
1.8Germanicus R.C., Jouha W., Moultif N., De Wolf P., Shah V.A., Gammon P.M., Luders U., Latry O., "Parametric nano-electrical analysis for SiC junctions of a packaged device" in IEEE Workshop Wide Bandgap Power Devices Appl. Europe, WiPDA Europe, 2022, pp -
1.9Zhang L., Dai T., Gammon P., Shah V., Mawby P., Antoniou M., "A 650V Hybrid-Channel SiC Trench MOSFET with Improved On-State Performance" in IEEE Energy Convers. Congr. Expo., ECCE, 2022, pp -
1.10Zhang L., Dai T., Gammon P., Shah V., Mawby P., Antoniou M., "Comparison of a 3.3 kV SiC Hybrid-Channel Trench MOSFET and a Planar MOSFET" in IEEE Workshop Wide Bandgap Power Devices Appl. Europe, WiPDA Europe, 2022, pp -
1.11Renz A.B., Vavasour O.J., Péréz-Tomás A., Cao Q., Shah V.A., Bonyadi Y., Pathirana V., Trajkovic T., Baker G.W.C., Mawby P.A., Gammon P.M., "Engineering the Schottky Interface of 3.3 kV SiC JBS Diodes Using a P2O5 Surface Passivation Treatment" in Mater. Sci. Forum, 2022, pp 190-194
1.12Renz A.B., Vavasour O.J., Rommel M., Baker G.W.C., Gammon P.M., Dai T., Li F., Antoniou M., Mawby P.A., Shah V.A., "A Study of High Resistivity Semi-Insulating 4H-SiC Epilayers Formed via the Implantation of Germanium and Vanadium" in Mater. Sci. Forum, 2022, pp 523-527
1.13Renz A.B.B., Vavasour O.J., Gammon P.M., Li F., Dai T., Baker G.W.C., Grant N.E., Murphy J.D., Mawby P.A., Shah V.A., Gott J., "Improved Reliability of 4H-SiC Metal-Oxide-Semiconductor Devices Utilising Atomic Layer Deposited Layers with Enhanced Interface Quality" in ECS Transactions, 2022, pp 43-49
1.14Renz A.B., Clarke Baker G.W., Shah V.A., Mawby P., Antoniou M., Gammon P.M., "The successful implementation of a phosphorous-based surface passivation treatment into an industrial 650 V 4H-SiC JBS fabrication process" in IEEE Workshop Wide Bandgap Power Devices Appl. Europe, WiPDA Europe, 2022, pp -
1.15Renz A.B., Vavasour O.J., Gammon P.M., Li F., Dai T., Baker G.W.C., Grant N.E., Murphy J.D., Mawby P.A., Shah V.A., "The Improved Reliability Performance of Post-Deposition Annealed ALD-SiO2" in Mater. Sci. Forum, 2022, pp 325-329
1.16Baker G.W.C., Li F., Dai T., Renz A., Zhang L., Qi Y., Shah V., Mawby P., Antoniou M., Gammon P., "A Study of 4H-SiC Semi-Superjunction Rectifiers for Practical Realisation" in Mater. Sci. Forum, 2022, pp 514-518
1.17Zhang L., Dai T., Gammon P.M., Lophitis N., Udrea F., Tiwari A., Gonzalez J.A.O., Renz A.B., Shah V.A., Mawby P.A., Antoniou M., "Investigations of Short Circuit Robustness of SiC IGBTs with Considerations on Physics Properties and Design" in Mater. Sci. Forum, 2022, pp 504-508
1.18Renz A.B., Vavasour O.J., Shah V.A., Pathirana V., Trajkovic T., Bonyadi Y., Wu R., Ortiz-Gonzalez J.A., Rong X., Baker G.W.C., Mawby P., Gammon P.M., "3.3 kV SiC JBS diodes employing a P2O5 surface passivation treatment to improve electrical characteristics" in IEEE Energy Convers. Congr. Expo., ECCE - Proc., 2021, pp 5283-5288
1.19T. Dai, L. Zhang, O. Vavasour, A. Renz, Q. Cao, V. A. Shah, P. Mawby, M. Antoniou, and P. M. Gammon, "A Compact and Cost-efficient Edge Termination Design for High Voltage 4H-SiC Devices," in 2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2021: IEEE, pp. 251-254.
1.20A. Renz, O. J. Vavasour, P. M. Gammon, F. Li, T. Dai, S. Esfahani, G. Baker, N. E. Grant, J. Murphy, P. A. Mawby and V. A.Shah"Development of High-Quality Gate Oxide on 4H-SiC Using Atomic Layer Deposition," in Materials Science Forum, 2020, vol. 1004: Trans Tech Publications Ltd, pp. 547-553.
1.21T. X. Dai, A. Renz, L. Zhang, O. J. Vavasour, G. Baker, V. A. Shah, P. A. Mawby, and P. M. Gammon, "Design and Optimisation of Schottky Contact Integration in a 4H-SiC Trench MOSFET," in Materials Science Forum, 2020, vol. 1004: Trans Tech Publications Ltd, pp. 808-813.
1.22G. W. C. Baker, C. W. Chan, T. Dai, A. B. Renz, F. Li, V. A. Shah, P. A. Mawby, P. M. Gammon, "Study of 4H-SiC Superjunction Schottky Rectifiers with Implanted P-Pillars", Materials Science Forum, Vol. 963, pp. 539-543, 2019.
1.23A. B. Renz, V. A. Shah, ,O. Vavasour, Y. Bonyadi, G. W. C. Baker, F. Li, T. Dai, M. Walker, P.A. Mawby and P.M. Gammon, "Surface Effects of Passivation within Mo/4H-SiC Schottky Diodes through MOS Analysis", Materials Science Forum, Vol. 963, pp. 511-515, 2019
1.24T. Dai, P. M. Gammon, V. A. Shah, X. Deng, M. R. Jennings, and P. A. Mawby. Design optimization of 1.2kv 4H-SIC trench MOSFET, Materials Science Forum, vol. 963 MSF, pp. 605-608, 2019.
1.25L.J. Woodend, P.M. Gammon, V.A. Shah, A. Pérez-Tomás, F. Li, D.P. Hamilton, M. Myronov, P.A. Mawby
“Cryogenic characterisation and modelling of commercial SiC MOSFETs”
Materials Science Forum, Vol. 897, pp. 557-560, May 2017
1.26Y. Bonyadi, P.M. Gammon, R. Bonyadi, V.A. Shah, C.A. Fisher, D.M. Martin, P.A. Mawby
“Characterization of 4H-SiC PiN Diodes Formed on Defects Identified by PL Imaging”
Materials Science Forum, Vol. 858, pp. 405-409, 2016
1.27G. Colston, S.D. Rhead, V.A. Shah, O.J. Newell, I.P. Dolbnya, D.R. Leadley, M. Myronov
“Mapping the Strain State of 3C-SiC/Si (001) Suspended Structures Using μ-XRD”
Materials Science Forum, Vol. 858, pp. 274-277, 2016
1.28F. Li, Y.K. Sharma, M.R. Jennings, A. Pérez-Tomás, V.A. Shah, H. Rong, S.A.O. Russell, D.M. Martin, P.A. Mawby
“Improved Channel Mobility by Oxide Nitridation for N-Channel MOSFET on 3C-SiC(100)/Si”
Materials Science Forum, Vol. 858, pp. 667-670, 2016
1.11.C. Chan, P.M. Gammon, V.A. Shah, C. Han, M. R. Jennings, C. A Fisher, A. Pérez-Tomás, M. Myronov, P.A. Mawby
“Simulations of a lateral PiN diode on Si/SiC substrate for high temperature applications.”
ECSCRM 2014
1.12.B. Mohammadi, V.A. Shah, M. R. Jennings, C. A. Fisher, P.A. Mawby
“Controlling Microtrench and striation in Trench in 4H-SiC.”
ECSCRM 2014
1.13.H. Chen, P.M. Gammon, V.A. Shah, C.A. Fisher, C. Chan, S. Jahdi, D. Hamilton, M. R. Jennings, M. Myronov, D. R. Leadley, P.A. Mawby
“Characterisation of commercial SiC power devices at cryogenic temperatures.”
ECSCRM 2014
1.14.G. Colston, M. Myronov, S. D. Rhead, V.A. Shah, Y. Sharma, P.A. Mawby, D.R. Leadley,
“Si1-xCx/Si(001) heterostructures for use in Schottky Diode Rectifiers Demonstrating High Breakdown Voltage and Negligible Leakage Current” (ORAL TALK GIVEN)
ECSCRM 2014
1.15.S. D. Rhead, V. A. Shah, J. E. Halpin, M. Myronov, D. H. Patchett, P. S. Allred, V. Kachkanov, I. P. Dolbnya, N. R. Wilson, and D. R. Leadley, (ORAL TALK GIVEN)
“Tensile strain mapping in flat germanium membranes”
ISTDM 2014
1.16.P.M. Gammon, C.A. Fisher, V.A. Shah, M. R. Jennings, A. Pérez-Tomás, S.E. Burrows, M. Myronov, D.R. Leadley, P.A. Mawby
“The cryogenic testing and characterisation of SiC PiN diodes.”
ICSCRM 2013
1.17.P.M. Gammon, C.A. Fisher, V.A. Shah, M. R. Jennings, A. Pérez-Tomás, S.E. Burrows, M. Myronov, D.R. Leadley, P.A. Mawby
Evaluating the cryogenic performance of SiC PiN diodes.
SSDM 2013
1.18.P.M. Gammon, V.A. Shah, O. Vavasour, A. Pérez-Tomás, C.A. Fisher, M. R. Jennings, M. Myronov, D.R. Leadley, P.A. Mawby
Barrier height inhomogeneity at the metal-SiC interface
ICSRM/SSDM 2013
1.19.P.M. Gammon, C.A. Fisher, V.A. Shah, M. R. Jennings, A. Pérez-Tomás, S.E. Burrows, M. Myronov, D.R. Leadley, P.A. Mawby
The cryogenic testing and characterisation of SiC PiN diodes
SSDM 2013
1.20.T. E. Whall,M. J. Prest,J. S. Richardson-Bullock, V. A. Shah, M. Myronov, E. H. C. Parker, D.R. Leadley, D. Gunnarsson, M. Prunnila, T. Brien, D. Morozov, P. Mauskopf
Silicon cold electron bolometer for bio-medical applications
European Solid-State Device Research & Circuits Conference (ESSDERC) Bucharest, Sept. 2013
1.21.J.S. Reparaz, E. Chávez-Ángel, J. Gomis-Bresco, M.R. Wagner, J. Cuffe, V.A. Shah, M. Myronov, D.R. Leadley, A. Shchepetov, M. Prunnila, J. Ahopelto, F. Alzina, and C.M. Sotomayor Torres
Thermal conductivity reduction in Si and Ge free-standing membranes investigated using Raman thermometry
19th Int. Workshop on Thermal Investigations of ICs and Systems (THERMINIC 2013), Berlin, Sept., 2013
1.22.C. Casteleiro, J. Halpin, V.A. Shah, M. Myronov and D.R. Leadley
Electrical and Structural Characterization of Thermally Grown GeO2 on Epitaxial Ge on Si(001) Substrate
International Conference on Silicon Epitaxy and Heterostructures (ICSI-8), Fukuoka, Japan, June 2013
1.23.O.A. Mironov, A.H.A. Hassan , S. Kiatgamolchai, M.Uhlarz, A. Dobbie, R.J.H. Morris, E. Cizmar, A. Feher, S. Gabani, V Shah, M Myronov, D.R. Leadley
Ultra High Hole Mobilities in a Pure Strained Ge Quantum Well
International Conference on Silicon Epitaxy and Heterostructures (ICSI-8), Fukuoka, Japan, June 2013
1.24.J. S. Reparaz, E. Chavez, J. Gomis-Bresco, M. R. Wagner, J. Cuffe, V.A. Shah, M. Myronov, D.R. Leadley, A. Shchepetov, M. Prunnila, J. Ahopelto, F. Alzina, and C. M. Sotomayor Torres
Determination of the thermal conductivity of Si and Ge thin membranes through Raman thermometry
E-MRS Spring Meeting, Strasburg, May 2013
1.25.M.R. Wagner, E. Chavez, J. Gomis-Bresco, J. S. Reparaz, V.A. Shah, M. Myronov, D.R. Leadley, A. Shchepetov, M. Prunnila, J. Ahopelto, F. Alzina, C.M. Sotomayor-Torres
Acoustic phonon dynamics in free-standing silicon and germanium membranes
E-MRS Spring Meeting, Strasburg, May 2013
1.26.A.H.A. Hassan, O.A. Mironov, A. Dobbie, R.J.H. Morris, J.E. Halpin, V.A. Shah, M. Myronov, D.R. Leadley, A. Feher, E. Cizmar, S. Gabani, V.V. Andrievskii and I.B. Berkutov
Structural and Electrical Characterization of SiGe Heterostructures Containing a Pure Ge Strained Quantum Well
ELNANO-2013, April 2013
1.27.D.R. Leadley,M.J. Prest,J.S. Richardson-Bullock, V.A. Shah, M. Myronov, R.J.H. Morris,T. Brian, T.E. Whall,E.H.C. Parker,D. Gunnarsson, M. Prunnila
Invited talk: “Cooltronics: electronic refrigeration for mK sensors”
7th International Workshop on “Functional Nanomaterials and Devices”, Kyiv, April 2013
1.28.D.R. Leadley,M.J. Prest,J.S. Richardson-Bullock, V.A. Shah, M. Myronov, R.J.H. Morris,T. Brian, T.E. Whall,E.H.C. Parker, D. Gunnarsson, M. Prunnila,E. Chávez, C.M. Sottomajor-Torres, A. Nassiopoulou.Invited talk: “Nanocoolers”
International Joint Sinano/Nanofunction/New Member States-Eastern Europe/ENI2 Workshop on “Advanced process and device integration and innovative nanofunctions in nanoelectronics”, Kyiv, April 2013
1.29.C. Casteleiro, J. E. Halpin, V.A. Shah, M. Myronov, D. R. Leadley,
Thermally grown GeO2 on epitaxial Ge on Si(001) substrate,
Intl Conf on Ultimate Integration on Silicon (ULIS-14) Warwick, March 2013
1.30.V.A. Shah, M. Myronov, L. Bawden, M.J. Prest, J.S. Richardson-Bullock, P.M. Gammon, S. Rhead, E.H.C. Parker, T.E Whall, D.R LeadleyNovel fabrication technique for Ge membranes,
Intl Conf on Ultimate Integration on Silicon (ULIS-14) Warwick, March 2013
1.31.E. Chávez, J. Gomis-Bresco, F. Alzina, J.S. Reparaz, , V.A. Shah, M. Myronov, D.R. Leadley, C.M. Sotomayor Torres, Flexural mode dispersion in ultra-thin Ge membranes
Intl Conf on Ultimate Integration on Silicon (ULIS-14) Warwick, March 2013
1.32.M.J. Prest, Q.T. Zhao, J.T. Muhonen, V.A. Shah, J.S. Richardson-Bullock, M. Prunnila, D. Gunnarsson, T.E. Whall, E.H.C. Parker, D.R. Leadley,
Using platinum silicide as a superconductor for silicon electron coolers,
Intl Conf on Ultimate Integration on Silicon (ULIS-14) Warwick, March 2013
1.33.J. S. Richardson-Bullock, M.J. Prest, M. Prunnila, D. Gunnarsson, V.A. Shah, A. Dobbie, M. Myronov, R.J.H. Morris, T.E. Whall, E.H.C. Parker, D.R. Leadley
Hole-phonon energy loss rate in boron doped silicon,
Intl Conf on Ultimate Integration on Silicon (ULIS-14) Warwick, March 2013
1.34.J.T. Muhonen, M.J. Prest, M. Prunnila, D. Gunnarsson, V.A. Shah, A. Dobbie, M. Myronov, R J.H. Morris, T.E. Whall, E.H.C. Parker, and D.R. Leadley
Influence of strain to the electron-phonon coupling in degenerately doped silicon at low temperatures
Australian Institute of Physics Annual Congress, Sydney Dec. 2012
1.35.P.M. Gammon, E. Donchev, V.A. Shah, A. Pérez Tomás, J.S. Pang, D.R. Leadley, M.R. Jennings, C.A. Fisher, T. Wang, B. Zou, P.K. Petrov and N.M. Alford
The modelling of inhomogeneous Si Schottky barrier diodes
UK Semiconductors, Sheffield, July 7 (2012)
1.36.C. Casteleiro, M. Myronov, J. Halpin, V.A. Shah, and D. R. Leadley
Electrical and structural properties of thermally grown GeO2 on epitaxial Ge on Si(001) substrate
Condensed Matter and Materials Physics, CMMP Edinburgh, 3-7 Sept. (2012)
1.37.V.A. Shah, M. Myronov, C. Wongwanitwatana, R.J.H. Morris, M.J. Prest, J. S. Richardson-Bullock, E.H.C. Parker, T.E. Whall, D.R. Leadley (ORAL TALK GIVEN)
Simple fabrication of suspended Germanium structures and their electrical properties from high quality Ge on Si(001) layers
222nd ECS Meeting, Honolulu, 7—12 October 2012.
1.38.C. Wongwanitwatana, V.A. Shah, M. Myronov, E.H.C. Parker, T.E. Whall, D.R. Leadley
Accurate reactive ion etching of Si, Ge and P doped Ge in an SF6-O2 radio-frequency plasma
222nd ECS Meeting, Honolulu, 7—12 October 2012.
1.39.A. Dobbie, M. Myronov, R.J.H. Morris, M.J. Prest, J. S. Richardson-Bullock, A. H. Hassan, V. A. Shah, E.H.C. Parker, T.E. Whall, D.R. Leadley
Ultra-High Hall Mobility (1 x 106 cm2V-1s-1) in a Two-Dimensional Hole Gas in a Strained Germanium Quantum Well Grown by Reduced Pressure CVD
ISTDM 2012, Berkeley, 4-6 June 2012.
1.40.M. Myronov, V.A. Shah, S. Rhead and D.R. Leadley
Epitaxial growth of tensile strained SiB alloy on a Si substrate
International SiGe Technology and Device Meeting (ISTDM 2012), Berkeley, June 4-6, (2012)
1.41.V.A. Shah, M. Myronov, C. Wongwanitwatana, R.J.H. Morris, M.J. Prest, J. S. Richardson-Bullock, E.H.C. Parker, T.E. Whall, D.R. Leadley
Simple fabrication of suspended Germanium structures and their electrical properties from high quality Ge on Si(001) layers
ISTDM 2012, Berkeley, 4-6 June 2012.
1.42.V.A. Shah, M. Myronov, A. Shchepetov, M.J. Prest, M. Prunnila, T.E.Whall, E.H.C. Parker, and D.R. Leadley
The Effects of Tensile and Compressive Strain on Ge Membranes
ICSI-7 2011, Leuven, 22-26 May 2011.
1.43.V. A. Shah, A. Dobbie, M. Myronov, D.R. Leadley
Reverse Graded Strain Relaxed SiGe Buffers for CMOS and Optoelectronic Integration
ICSI-7 2011, Leuven, 22-26 May 2011.
1.44.J. S. Richardson-Bullock, M.J. Prest, J.T. Muhonen, M. Prunnila, D. Gunnarsson, V.A. Shah, R.J.H. Morris, A. Dobbie, M. Myronov, T.E. Whall, E.H.C. Parker, D.R. Leadley
Improved Cooling Performance in Strained Silicon Tunnel Junctions
ICSI-7 2011, Leuven, 22-26 May 2011.
1.45.M. J. Prest, J. T. Muhonen, M. Prunnila, D. Gunnarsson, J. S. Richardson-Bullock, V.A. Shah, T. E. Whall, E. H. C. Parker, D. R. Leadley,
Invited talk “Cooltronics (Solid State Refrigeration below one Kelvin)”
2nd Workshop on Phonons and Fluctuations, Paris, France, 8th to 9th September 2011.
1.46.M.J. Prest, J.T. Muhonen, M. Prunnila, D. Gunnarsson, J S. Richardson-Bullock, V.A. Shah, R.J.H. Morris, A. Dobbie, M. Myronov, T.E. Whall, E.H.C. Parker, and D.R. Leadley
Strained Silicon for Bolometer Applications
Low Temperature Detectors (LTD 14), Heidelberg, Aug 1-5, 2011.
1.47.M.J. Prest, J.T. Muhonen, M. Prunnila, D. Gunnarsson, J S. Richardson-Bullock, V.A. Shah, R.J.H. Morris, A. Dobbie, M. Myronov, T.E. Whall, E.H.C. Parker, and D.R. Leadley
Strain Enhancement of Electron Cooling in Silicon-Superconductor Tunnel Junctions
Low Temperature Physics (LT26), Beijing, Aug 10-17, 2011.
1.48.M.J. Prest, J.T. Muhonen, M. Prunnila, D. Gunnarsson, V.A. Shah, R.J.H. Morris, A. Dobbie, M. Myronov, T.E. Whall, E.H.C. Parker, D.R. Leadley
Reduction of Electron-Phonon Conductance in Strained Silicon
13th International Workshop “Cryogenic Nanosensors” Bjorkliden, Kiruna, Sweden, March 20-27, (2011)
1.49.J. Halpin, A. Dobbie, V. A. Shah, M. Myronov and D. R. Leadley
Understanding Tensile Strain in Relaxed Germanium Epitaxial Layers on (001) Silicon Substrates
Condensed Matter and Materials Physics, University of Warwick, UK (2010)
1.50.Van H. Nguyen, A. Dobbie, M. Myronov, V. A. Shah, Xue-Chao Liu and D. R. Leadley
Characterisation of Strained Ge Epitaxial Layers Grown by RPCVD on Reverse-Graded Si0.2Ge0.8 Relaxed Buffers
Condensed Matter and Materials Physics, University of Warwick, UK (2010)
1.51.V. A. Shah, A. Dobbie, M. Myronov, D.R. Leadley
Thickness studies of high quality Ge layers on Si (001) substrates.
UK Semiconductors, Sheffield, July 7-8 (2010)
1.52.M. Myronov, V. A. Shah, Xue-Chao Liu, A. Dobbie, Van H. Nguyen, D.R. Leadley and E.H.C. Parker
Highly strained Si epilayers grown on SiGe/Si(100) virtual substrates by RP-CVD
E-MRS 2010 Spring Meeting, Strasbourg, France, June 7-11, 2010
1.53.V. A. Shah, A. Dobbie, M. Myronov, D.R. Leadley
High quality relaxed Ge layers grown directly on a Si (001) substrate.
ISTDM 2010, Stockholm 24-26 May 2010
1.54.M. Myronov, V. A. Shah, Xue-Chao Liu, A. Dobbie, Van H. Nguyen, D. R. Leadley and E. H. C. Parker
Highly Strained (100) Si Epilayers Grown on SiGe by RP-CVD
European Materials Research Society, Strasbourg, France (2010)
1.55.V.H. Nguyen, A. Dobbie, M. Myronov, V. A. Shah, X-C. Liu and D.R. Leadley
Characterisation of Strained Ge Epitaxial Layers Grown by RPCVD on Reverse Graded Si0.2Ge0.8 Relaxed Buffers
Institute of Physics Condensed Matter and Materials Physics Conference, Warwick, Dec 17-19 (2009).
1.56.M. Myronov, V. A. Shah, A. Dobbie, Xue-Chao Liu, Van H. Nguyen and D. R. Leadley
Compressively strained Ge channel heterostructures grown by RP-CVD for the next generation CMOS devices”.
2009 International Conference on Solid State Devices and Materials (SSDM 2009), October 6-9, 2009, Sendai, Japan
1.57.D. R. Leadley, V. A. Shah, A. Dobbie and M. Myronov
“Reverse graded virtual substrates for strained Ge devices”.
UK Semiconductors 2009, July 1-2, 2009, Sheffield, UK, C-O-11.
1.58.M. Myronov, A. Dobbie, V. A. Shah and D.R. Leadley
Epitaxial growth of compressive strained Ge layers on reverse linearly graded virtual substrate by RP-CVD
E-MRS 2009, Strasbourg, France, June 8-12, (2009)
1.59.M. Myronov, A. Dobbie, V. A. Shah and D.R. Leadley(ORAL TALK GIVEN)
Low temperature epitaxial growth of compressive strained Ge layers on reverse linearly graded virtual substrate by RP-CVD
ICSI-6: 6th Int. Conf.Silicon Epitaxy and Heterostructures, Los Angeles, California, USA, May 17 – 22, (2009)
1.60 V. A. Shah, D.R. Leadley, D. Fulgoni, J. Parsons, E.H.C. Parker (ORAL TALK GIVEN)
Reverse graded SiGe/Ge/Si heterostructures for high-composition virtual substrates.
E-MRS Strasbourg, France (May 2008)
2. (Invited Presentation) M. R. Jennings, P. M. Gammon, A. Pérez-Tomás, V. A. Shah, M. C. Davis, S. E. Burrows, G. J. Roberts, P. A. Mawby
Si/SiC and Ge/SiC heterojunctions for Silicon Carbide Device Applications
Proceedings of the International Workshop on the Physics of Semiconductor Devices (IWPSD) 2009, December 2009, Mumbai, India
3. P. M. Gammon, A. Pérez-Tomás, M. R. Jennings, G. J. Roberts, V. A. Shah, J. A. Covington, and P. A. Mawby.
The heterojunction properties of a novel Ge/SiC semiconductor structure
Workshop on Advanced Semiconductor Materials and devices for Power Electronics applications (WASMPE) 2009, May 7-8, 2009, Catania, Italy
4. A. Pérez-Tomás, M. R. Jennings, M. Davis, V. Shah, T. Grasby, J. A. Covington and P. A. Mawby
Molecular beam epitaxy Si/4H-SiC heterojunction diodes
Proceedings of the International Workshop on the Physics of Semiconductor Devices (IWPSD) 2007, December 17-20, 2007, Mumbai, India