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Dr Vishal Shah - Conference Publications

  • Chen, Han, Gammon, P. M., Shah, V. A., Fisher, Craig A., Chan, Chun Wa, Jahdi, Saeed, Hamilton, Dean P., Jennings, M. R., Myronov, Maksym, Leadley, D. R. (David R.), Mawby, P. A. (Philip A.), 2015. Cryogenic characterization of commercial SiC Power MOSFETs. Silicon Carbide and Related Materials 2014, Grenoble, France, Sep 2014, Published in Materials Science Forum, pp. 777-780
  • Shah, V. A., Trushkevych, Oksana, Myronov, Maksym, Rhead, Stephen, Halpin, John E., Edwards, R. S. (Rachel Sian), Leadley, D. R. (David R.), 2014. Tensile strained Ge membranes. 15th International Conference on Ultimate Integration on Silicon (ULIS), 2014, Stockholm, Sweden, 7-9 April 2014, Published in International Conference on Ultimate Integration on Silicon, pp. 137-140
  • Whall, Terry E., Prest, M. J. (Martin J.), Richardson-Bullock, J. S., Shah, V. A., Myronov, Maksym, Parker, Evan H. C., Leadley, D. R. (David R.), Prunnila, Mika, Gunnarsson, David, Brien, T., Mozonov, D., Mauskopf, P., 2013. Cooltronics : a new low-temperature tunneling-technology based on Silicon. ULIS 2013: The 14th International Conference on Ultimate Integration on Silicon, Coventry, UK, 19-21 March 2013, Published in 14th International Conference on Ultimate Integration on Silicon, pp. 1-4
  • Chavez, E., Gomis-Bresco, J., Alzina, F., Reparaz, J. S., Shah, V. A., Myronov, Maksym, Leadley, D. R. (David R.), Sotomayor Torres, C. M., 2013. Flexural mode dispersion in ultra-thin Ge membranes. ULIS 2013: The 14th International Conference on Ultimate Integration on Silicon, Coventry, UK, 19-21 March 2013, Published in 14th International Conference on Ultimate Integration on Silicon, pp. 185-188
  • Richardson-Bullock, J. S., Prest, M. J. (Martin J.), Prunnila, Mika, Gunnarsson, David, Shah, V. A., Dobbie, A. (Andrew), Myronov, Maksym, Morris, R. J. H. (Richard J. H.), Whall, Terry E., Parker, Evan H. C., Leadley, D. R. (David R.), 2013. Hole-phonon energy loss rate in boron doped silicon. ULIS 2013: The 14th International Conference on Ultimate Integration on Silicon, Coventry, UK, 19-21 March 2013, Published in 14th International Conference on Ultimate Integration on Silicon, pp. 213-215
  • Shah, V. A., Myronov, Maksym, Bawden, L., Prest, M. J. (Martin J.), Richardson-Bullock, J. S., Gammon, P. M., Rhead, S., Parker, Evan H. C., Whall, Terry E., Leadley, D. R. (David R.), 2013. Novel fabrication technique for Ge membranes. ULIS 2013: The 14th International Conference on Ultimate Integration on Silicon, Coventry, UK, 19-21 March 2013, Published in 14th International Conference on Ultimate Integration on Silicon, pp. 181-184
  • Hassan, A. H. A., Mironov, O. A., Feher, A., Cizmar, E., Gabani, S., Morris, R. J. H. (Richard J. H.), Dobbie, A. (Andrew), Shah, V. A., Myronov, Maksym, Berkutov, I. B., Andrievskii, V. V., Leadley, D. R. (David R.), 2013. Pure Ge quantum well with high hole mobility. ULIS 2013: The 14th International Conference on Ultimate Integration on Silicon, Coventry, UK, 19-21 March 2013, Published in 14th International Conference on Ultimate Integration on Silicon (ULIS), pp. 117-120
  • Hassan, A. H. A., Mironov, O. A., Dobbie, A. (Andrew), Morris, J. H., Halpin, John E., Shah, V. A., Myronov, Maksym, Leadley, D. R. (David R.), Gabani, S., Feher, A., Cizmar, E., Andrievskii, V. V., Berkutov, I. B., 2013. Structural and electrical characterization of SiGe heterostructures containing a pure Ge strained quantum well. 2013 IEEE 33rd International Scientific Conference Electronics and Nanotechnology, ELNANO 2013, Kiev, Ukraine, 16-19 April 2013, Published in 2013 IEEE XXXIII International Scientific Conference Electronics and Nanotechnology (ELNANO), pp. 51-55
  • Casteleiro, Catarina, Halpin, John E., Shah, V. A., Myronov, Maksym, Leadley, D. R. (David R.), 2013. Thermally grown GeO2 on epitaxial Ge on Si(001) substrate. ULIS 2013: The 14th International Conference on Ultimate Integration on Silicon, Coventry, UK, 19-21 March 2013, Published in 14th International Conference on Ultimate Integration on Silicon, pp. 169-172
  • Prest, M. J. (Martin J.), Zhao, Q. T, Muhonen, J. T., Shah, V. A., Richardson-Bullock, J. S., Prunnila, Mika, Gunnarsson, David, Whall, Terry E., Parker, Evan H. C., Leadley, D. R. (David R.), 2013. Using platinum silicide as a superconductor for silicon electron coolers. ULIS 2013: The 14th International Conference on Ultimate Integration on Silicon, Coventry, UK, 19-21 March 2013, Published in 14th International Conference on Ultimate Integration on Silicon, pp. 201-204
  • Myronov, Maksym, Shah, V. A., Rhead, S., Leadley, D. R. (David R.), 2012. Epitaxial growth of tensile strained SiB alloy on a Si substrate. 6th International Silicon-Germanium Technology and Device Meeting, ISTDM 2012, Berkeley, CA, USA, 4-6 June 2012, Published in 2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Proceedings, pp. 132-133
  • Dobbie, A. (Andrew), Myronov, Maksym, Morris, R. J. H. (Richard J. H.), Prest, M. J. (Martin J.), Richardson-Bullock, J. S., Hassan, A. H. A., Shah, V. A., Parker, Evan H. C., Whall, Terry E., Leadley, D. R. (David R.), 2012. Ultra-high Hall mobility (1 x 106 cm2V-1S-1) in a two-dimensional hole gas in a strained germanium quantum well grown by reduced pressure CVD. 6th International Silicon-Germanium Technology and Device Meeting, ISTDM 2012, Berkeley, CA, USA, 4-6 June 2012, Published in 2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Proceedings, pp. 48-49
  • Gammon, P. M., Pérez-Tomás, Amador, Jennings, M. R., Roberts, G. J., Shah, V. A., Covington, James A., Mawby, P. A., 2010. Germanium-silicon carbide heterojunction diodes - a study in device characteristics with increasing layer thickness and deposition temperature. 13th International Conference on Silicon Carbide and Related Materials, Nurnberg, Germany, October 11-16, 2009, Published in Materials Science Forum, pp. 889-892
  • Pérez-Tomás, Amador, Jennings, M. R., Gammon, P. M., Shah, V. A., Mawby, P. A. (Philip A.), Guy, O. J., Hammond, R., 2010. Si on SiC, a novel platform for MOS power devices. 40th European Solid State Device Research Conference (ESSDERC), Seville, Spain, Sep 13-17, 2010
  • Mawby, P. A., Pérez-Tomás, Amador, Jennings, M. R., Davis, M., Covington, James A., Shah, V. A., Grasby, T., 2007. Molecular beam epitaxy Si/4H-SiC heterojunction diodes. 14th International Workshop on the Physics of Semiconductor Devices, Indian Inst Technol, Mumbai, India, 16-20 Dec 2007, Published in International Workshop on Physics of Semiconductor Devices, 2007. IWPSD 2007, pp. 775-780