Dr Vishal Shah - Journal Publications

Dai, Tianxiang, Zhang, L., Vavasour, Oliver J., Renz, A. B., Shah, V. A., Antoniou, M., Mawby, P. A. (Philip A.), Gammon, P. M., 2021. A compact trench-assisted space-modulated JTE design for high-voltage 4H-SiC devices. IEEE Transactions on Electron Devices
Renz, A. B., Shah, V. A., Vavasour, Oliver J., Bonyadi, Yeganeh, Li, Fan, Dai, Tianxiang, Baker, G. W. C., Hindmarsh, Steven A., Han, Yan, Walker, Marc, Sharma, Y., Liu, Y., Raghothamachar, B., Dudley, M., Mawby, P. A. (Philip A.), Gammon, P. M., 2020. The improvement of Mo/4H-SiC Schottky diodes via a P2O5 surface passivation treatment. Journal of Applied Physics, 127 (2)
Zhou, Leiqing, Colston, Gerard B., Myronov, Maksym, Leadley, D. R. (David R.), Trushkevych, Oksana, Shah, V. A., Edwards, R. S. (Rachel S.), 2020. Ultrasonic inspection and self-healing of Ge and 3C-SiC semiconductor membranes. Journal of Microelectromechanical Systems
Murphy, John D., Pointon, A. I., Grant, Nicholas E., Shah, V. A., Myronov, Maksym, Voronkov, Vladimir V., Falster, R. J., 2019. Minority carrier lifetime in indium doped silicon for photovoltaics. Progress in Photovoltaics : Research and Applications, 27 (10), pp. 844-855
Woodend, Lee, Gammon, P. M., Shah, Vishal, Pérez-Tomás, Amador, Li, Fan, Hamilton, Dean P., Myronov, Maksym, Mawby, P. A. (Philip A.), 2017. Cryogenic characterisation and modelling of commercial SiC MOSFETs. Materials Science Forum, 897, pp. 557-560
Li, Fan, Sharma, Yogesh K., Jennings, M. R., Pérez-Tomás, Amador, Shah, V. A., Rong, Hua, Russell, Stephen, Martin, David, Mawby, P. A. (Philip A.), 2016. Improved channel mobility by oxide nitridation for N-Channel MOSFET on 3C-SiC(100)/Si. Materials Science Forum, 858, pp. 667-670
Colston, Gerard B., Rhead, Stephen, Shah, V. A., Newell, Oliver, Dolbnya, Igor P., Leadley, David R., Myronov, Maksym, 2016. Mapping the strain and tilt of a suspended 3C-SiC membrane through micro X-ray diffraction. Materials & Design, 103, pp. 244-248
Richardson-Bullock, J. S., Prest, M. J. (Martin J.), Shah, V. A., Gunnarsson, David, Prunnila, Mika, Dobbie, A. (Andrew), Myronov, Maksym, Morris, R. J. H. (Richard J. H.), Whall, Terry E., Parker, Evan H. C., Leadley, D. R. (David R.), 2015. Comparison of electron?phonon and hole?phonon energy loss rates in silicon. Solid-State Electronics, 103, pp. 40-43
Shah, V. A., Rhead, Stephen, Finch, June, Myronov, Maksym, Reparaz, J. S., Morris, R. J. H. (Richard J. H.), Wilson, Neil R., Kachkanov, V., Dolbnya, I. P., Halpin, John E., Patchett, D., Allred, Phil, Colston, Gerard B., Sawhney, K. J. S., Sotomayor Torres, C. M., Leadley, D. R. (David R.), 2015. Electrical properties and strain distribution of Ge suspended structures. Solid-State Electronics, 108, pp. 13-18
Gunnarsson, David, Richardson-Bullock, J. S., Prest, M. J. (Martin J.), Nguyen, H. Q., Timofeev , A. V., Shah, V. A., Whall, Terry E., Parker, Evan H. C., Leadley, D. R. (David R.), Myronov, Maksym, Prunnila, Mika, 2015. Interfacial engineering of semiconductor?superconductor junctions for high performance micro-coolers. Scientific Reports, 5
Chan, Chun Wa, Gammon, P. M., Shah, V. A., Chen, Han, Jennings, M. R., Fisher, Craig A., Pérez-Tomás, Amador, Myronov, Maksym, Mawby, P. A. (Philip A.), 2015. Simulations of a lateral PiN diode on SiSiC substrate for high temperature applications. Materials Research Forum, 821 (7), pp. 624-627
Colston, Gerard B., Myronov, Maksym, Rhead, Stephen, Shah, V. A., Sharma, Yogesh K., Mawby, P. A. (Philip A.), Leadley, D. R. (David R.), 2015. Si1-xCx/Si(001) heterostructures for use in Schottky diode rectifiers demonstrating high breakdown voltage and negligible leakage current. Materials Science Forum, 821-823, pp. 571-574
Prest, M. J. (Martin J.), Richardson-Bullock, J. S., Zhao, Q. T., Muhonen, J. T., Gunnarsson, David, Prunnila, Mika, Shah, V. A., Whall, Terry E., Parker, Evan H. C., Leadley, D. R. (David R.), 2015. Superconducting platinum silicide for electron cooling in silicon. Solid-State Electronics, 103, pp. 15-18
Li, Fan, Sharma, Yogesh K., Shah, V. A., Jennings, M. R., Pérez-Tomás, Amador, Myronov, Maksym, Fisher, Craig A., Leadley, D. R. (David R.), Mawby, P. A. (Philip A.), 2015. Electrical activation of nitrogen heavily implanted 3C-SiC(100). Applied surface science, 353, pp. 958-963
Myronov, Maksym, Morrison, Christopher, Halpin, John E., Rhead, S., Casteleiro, Catarina, Foronda, Jamie, Shah, V. A., Leadley, D. R. (David R.), 2014. An extremely high room temperature mobility of two-dimensional holes in a strained Ge quantum well heterostructure grown by reduced pressure chemical vapor deposition. Japanese Journal of Applied Physics, 53 (4S)
Shah, V. A., Myronov, Maksym, Rhead, S., Halpin, John E., Shchepetov, A., Prest, M. J. (Martin J.), Prunnila, Mika, Whall, Terry E., Parker, Evan H. C., Leadley, D. R. (David R.), 2014. Flat single crystal Ge membranes for sensors and opto-electronic integrated circuitry. Solid-State Electronics, 98, pp. 93-98
Shah, V. A., Rhead, S., Halpin, John E., Trushkevych, Oksana, Chávez-Ángel, E., Shchepetov, A., Kachkanov, V., Wilson, Neil R., Myronov, Maksym, Reparaz, J. S., Edwards, R. S. (Rachel Sian), Wagner, M. R., Alzina, F., Dolbnya, I. P., Patchett, D. H., Allred, Phil, Prest, M. J. (Martin J.), Gammon, P. M., Prunnila, Mika, Whall, Terry E. et al (Select to open full list), 2014.

All authors for High quality single crystal Ge nano-membranes for opto-electronic integrated circuitry

Shah, V. A., Rhead, S., Halpin, John E., Trushkevych, Oksana, Chávez-Ángel, E., Shchepetov, A., Kachkanov, V., Wilson, Neil R., Myronov, Maksym, Reparaz, J. S., Edwards, R. S. (Rachel Sian), Wagner, M. R., Alzina, F., Dolbnya, I. P., Patchett, D. H., Allred, Phil, Prest, M. J. (Martin J.), Gammon, P. M., Prunnila, Mika, Whall, Terry E., Parker, Evan H. C., Sotomayor Torres, C. M., Leadley, D. R. (David R.)

High quality single crystal Ge nano-membranes for opto-electronic integrated circuitry. Journal of Applied Physics, 115 (14)
Trushkevych, Oksana, Shah, V. A., Myronov, Maksym, Halpin, John E., Rhead, S., Prest, M. J. (Martin J.), Leadley, D. R. (David R.), Edwards, R. S. (Rachel Sian), 2014. Laser-vibrometric ultrasonic characterization of resonant modes and quality factors of Ge membranes. Science and Technology of Advanced Materials, 15 (2)
Wongwanitwattana, Chalermwat, Shah, V. A., Myronov, Maksym, Parker, Evan H. C., Whall, Terry E., Leadley, D. R. (David R.), 2014. Precision plasma etching of Si, Ge, and Ge:P by SF6 with added O2. Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 32 (3)
Rhead, S., Halpin, John E., Shah, V. A., Myronov, Maksym, Patchett, D. H., Allred, Phil, Kachkanov, V., Dolbnya, I. P., Reparaz, J. S., Wilson, Neil R., Sotomayor Torres, C. M., Leadley, D. R. (David R.), 2014. Tensile strain mapping in flat germanium membranes. Applied Physics Letters, 104 (17)
Gammon, P. M., Fisher, Craig A., Shah, V. A., Jennings, M. R., Pérez-Tomás, Amador, Burrows, S. E. (Susan E.), Myronov, Maksym, Leadley, D. R. (David R.), Mawby, P. A. (Philip A.), 2014. The cryogenic testing and characterisation of SiC diodes. Materials Science Forum, 778-780, pp. 863-866
Shah, V. A., Myronov, Maksym, Dobbie, A. (Andrew), Leadley, D. R. (David R.), 2013. Introduction of terraces into a reverse linearly graded SiGe buffer on Si(001) substrate and their effect on the buffer's structural properties. ECS Journal of Solid State Science and Technology, 2 (3), pp. Q40-Q44
Gammon, P. M., Pérez-Tomás, Amador, Shah, V. A., Vavasour, O., Donchev, E., Pang, J. S., Myronov, Maksym, Fisher, Craig A., Jennings, M. R., Leadley, D. R. (David R.), Mawby, P. A. (Philip A.), 2013. Modelling the inhomogeneous SiC Schottky interface. Journal of Applied Physics, 114 (22)
Gammon, P. M., Donchev, E., Pérez-Tomás, Amador, Shah, V. A., Pang, J. S., Petrov, P. K. (Peter K.), Jennings, M. R., Fisher, Craig A., Mawby, P. A. (Philip A.), Leadley, D. R. (David R.), Alford, Neil McN., 2012. A study of temperature-related non-linearity at the metal-silicon interface. Journal of Applied Physics, Vol.112
Shah, V. A., Myronov, Maksym, Wongwanitwatana, Chalermwat, Bawden, Lewis, Prest, M. J. (Martin J.), Richardson-Bullock, J. S., Rhead, S., Parker, Evan H. C., Whall, Terry E., Leadley, D. R. (David R.), 2012. Electrical isolation of dislocations in Ge layers on Si(001) substrates through CMOS-compatible suspended structures. Science and Technology of Advanced Materials, 13 (5)
Shah, V. A., Dobbie, A. (Andrew), Myronov, Maksym, Leadley, D. R. (David R.), 2012. Reverse graded strain relaxed SiGe buffers for CMOS and optoelectronic integration. Thin Solid Films, Vol.520 (No.8), pp. 3227-3231
Dobbie, A. (Andrew), Myronov, Maksym, Morris, R. J. H. (Richard J. H.), Hassan, A. H. A., Prest, M. J. (Martin J.), Shah, V. A., Parker, Evan H. C., Whall, Terry E., Leadley, D. R. (David R.), 2012. Ultra-high hole mobility exceeding one million in a strained germanium quantum well. Applied Physics Letters, Vol.101 (No.17)
Shah, V. A., Dobbie, A. (Andrew), Myronov, Maksym, Leadley, D. R. (David R.), 2011. Effect of layer thickness on structural quality of Ge epilayers grown directly on Si(001). Thin Solid Films, Vol.519 (No.22), pp. 7911-7917
Shah, V. A., Dobbie, A. (Andrew), Myronov, Maksym, Leadley, D. R. (David R.), 2011. High quality relaxed Ge layers grown directly on a Si(001) substrate. Solid-State Electronics, Vol.62 (No.1), pp. 189-194
Muhonen, Juha, Prest, M. J. (Martin J.), Prunnila, Mika, Gunnarsson, David, Shah, V. A., Dobbie, A. (Andrew), Myronov, Maksym, Morris, R. J. H. (Richard J. H.), Whall, Terry E., Parker, Evan H. C., Leadley, D. R. (David R.), 2011. Strain dependence of electron-phonon energy loss rate in many-valley semiconductors. Applied Physics Letters, Vol.98 (No.18)
Prest, M. J. (Martin J.), Muhonen, Juha, Prunnila, Mika, Gunnarsson, David, Shah, V. A., Richardson-Bullock, J. S., Dobbie, A. (Andrew), Myronov, Maksym, Morris, R. J. H. (Richard J. H.), Whall, Terry E., Parker, Evan H. C., Leadley, D. R. (David R.), 2011. Strain enhanced electron cooling in a degenerately doped semiconductor. Applied Physics Letters, Vol.99 (No.25)
Myronov, Maksym, Shah, V. A., Dobbie, A. (Andrew), Liu, Xue-Chao, Nguyen, Van H., Leadley, D. R. (David R.), Parker, Evan H. C., 2010. Highly strained Si epilayers grown on SiGe/Si(100) virtual substrate by reduced pressure chemical vapour deposition. physica status solidi (c), Vol.8 (No.3), pp. 952-955
Myronov, Maksym, Dobbie, A. (Andrew), Shah, V. A., Liu, Xue-Chao, Nguyen, Van H., Leadley, D. R. (David R.), 2010. High quality strained Ge epilayers on a Si0.2Ge0.8/Ge/Si(100) global strain-tuning platform. Electrochemical and Solid State Letters, Vol.13 (No.11), pp. H388-H390
Gammon, P. M., Pérez-Tomás, Amador, Jennings, M. R., Shah, V. A., Boden, S. A., Davis, M. C., Burrows, S. E., Wilson, Neil R., Roberts, G. J., Covington, James A., Mawby, P. A., 2010. Interface characteristics of n-n and p-n Ge/SiC heterojunction diodes formed by molecular beam epitaxy deposition. Journal of Applied Physics, Vol.107 (No.12)
Shah, V. A., Dobbie, A. (Andrew), Myronov, Maksym, Leadley, D. R. (David R.), 2010. Reverse graded SiGe/Ge/Si buffers for high-composition virtual substrates. Journal of Applied Physics, Vol.107 (No.6)
Shen, C., Trypiniotis, T., Lee, K. Y., Holmes, S. N., Mansell, Rhodri, Husain, Muhammad Khaled, Shah, V. A., Li, Xiaoli V., Kurebayashi, H., Farrer, I., de Groot, C. H., Leadley, D. R. (David R.), Bell, Gavin R., Parker, Evan H. C., Whall, Terry E., Ritchie, David A., Barnes, Crispin H. W., 2010. Spin transport in germanium at room temperature. Applied Physics Letters, Vol.97 (No.16), pp. 162104-1
Gammon, P. M., Pérez-Tomás, Amador, Shah, V. A., Roberts, G. J., Jennings, M. R., Covington, James A., Mawby, P. A., 2009. Analysis of inhomogeneous Ge/SiC heterojunction diodes. Journal of Applied Physics, Vol.106 (No.9)
Gammon, P. M., Pérez-Tomás, Amador, Jennings, M. R., Roberts, G. J., Davis, M. C., Shah, V. A., Burrows, S. E., Wilson, Neil R., Covington, James A., Mawby, P. A., 2008. Characterization of n-n Ge/SiC heterojunction diodes. Applied Physics Letters, Vol.93 (No.11)
Shah, V. A., Dobbie, A., Myranov, Maksym, Fulgoni, D. J. F., Nash, Lee John, Leadley, D. R. (David R.), 2008. Reverse graded relaxed buffers for high Ge content SiGe virtual substrates. Applied Physics Letters, Vol.93 (No.19)
Pérez-Tomás, Amador, Jennings, M. R., Davis, M. C., Covington, James A., Mawby, P. A., Shah, V. A., Grasby, T., 2007. Characterization and modeling of n-n Si/SiC heterojunction diodes. Journal of Applied Physics, Vol.102 (No.1)
Pérez-Tomás, Amador, Jennings, M. R., Davis, M., Shah, V. A., Grasby, T., Covington, James A., Mawby, P. A., 2007. High doped MBE Si p-n and n-n heterojunction diodes on 4H-SiC. MICROELECTRONICS JOURNAL, 38 (12), pp. 1233-1237