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Wide Bandgap Power Semiconductor Devices: You need to know how to drive them (and this is not Top Gear!)

Wide bandgap (WBG) power devices, namely silicon carbide (SiC) and Gallium Nitride (GaN) are a reality now. They are used in different applications and it appears that they are going to be fundamental in areas like electric vehicles (EV). SiC is poised to be a game changer in EV powertrains. Fast, low losses, able to operate at high temperatures… It means more compact power electronics and a higher power density. And it is brilliant, isn’t it?

However… nothing is as easy as it seems. Direct replacement of conventional silicon power devices is not just swapping A and B. Driving SiC (and GaN!) power devices is trickier than it may seem. Reliability plays a fundamental role and you have to understand the reliability implications. Here at Warwick, we want to accelerate the uptake of WBG power semiconductors in applications like EV, we want to be ready for the future (present!) and we know how to drive them.

If you want to know more about how to drive WGB power devices and the reliability implications, you are welcome to attend this talk by Dr Jose Ortiz Gonzalez, Zeeman Lecturer and researcher on WBG power device reliability.