Power Electronics Reliability and Characterisation Lab - PERC Lab
Power Electronics Reliability and Characterisation Lab (PERC Lab)
The mission of the PERC Lab is to accelerate the adoption of Silicon Carbide (SiC) and Gallium Nitride (GaN) technologies by establishing world-class testing standards, enhancing the absolute lifetime reliability of next-generation power electronics. The PERC Lab academics are pioneers in advanced characterisation methodologies for wide bandgap power electronic devices, de-risking the adoption of WBG devices through comprehensive SiC and GaN characterisation, unlocking unprecedented efficiency and ultimate reliability for the future of power electronics. Our research targets emerging ultra-wide bandgap devices (like Gallium Oxide) without forgetting silicon power devices.
Staff Members
Research Students
Research Projects
Publications
Dissemination & Impact
Research Activities
Vacancies
Archived News
Recent News
Recent activity of the PERC Lab Members
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Latest News
April 2026: Latest journal article published in IEEE Transactions on Electron Devices. The research focusses on short circuit, third quadrant and avalanche ruggedness of different SiC MOSFET Technologies
March 2026 : Prof Alatise made a presentation at CIPS 2026 Dresden.
Funders/Support
The research activities at the Power Electronics Characterisation and Reliability lab have been supported by
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