Publications

Publication	Year
Prospects and Challenges for SiC Power Devices in MMC-VSC-HVDC Applications O Alatise, S Jahdi, PM Gammon, J Ortiz-Gonzalez, M Hosseinzadehlish, ... Key Engineering Materials 1024, 39-47	2025
Long-term positive and negative gate bias stress tests on parallel connected SiC MOSFETs at− 40° C and 175° C A Deb, M Taha, JO Gonzalez, P Mawby, S Jahdi, B Etoz, O Alatise Microelectronics Reliability 172, 115834	2025
SiC MOSFET Hybrid Switches with Reverse Conducting IGBTs: Loss and Surge Current Analysis A Deb, JO Gonzalez, S Jahdi, R Wu, X Yuan, O Alatise IEEE Transactions on Power Electronics	2025
Determination of Short-Circuit Safe Operating Area of Trench SiC MOSFETs Under Repetitive Stress Conditions R Yu, S Jahdi, P Mellor, O Alatise, M Kuball IEEE Transactions on Electron Devices	2025
Electrothermal power cycling of GaN and SiC cascode devices (vol 150, 115117, 2023) Y Gunaydin, S Jahdi, R Yu, X Yuan, O Alatise, JO Gonzalez MICROELECTRONICS RELIABILITY 169	2025
Corrigendum to “Electrothermal power cycling of GaN and SiC cascode devices”[Microelectron. Reliab. 150 (November 2023) 115117] Y Gunaydin, S Jahdi, R Yu, X Yuan, O Alatise, JO Gonzalez Microelectronics Reliability 169, 115748	2025
Power Loss Devices Stress Optimisation for Hybrid Si-SiC Switch Design Under High Current Load O Zinchenko, JO Gonzalez, O Alatise, P Mawby PCIM Conference 2025; International Exhibition and Conference for Power …	2025
Impact of Gate Turn-off Voltage on Body Diode Degradation of the Latest Generation SiC MOSFET MA Karout, MA Haleem, A Deb, N Arnold, AB Renz, C Fisher, S Jahdi, ... PCIM Conference 2025; International Exhibition and Conference for Power …	2025
Measurement Techniques of Threshold Voltage Shift and Recovery in GaN e-HEMTs B Etoz, JO Gonzalez, A Deb, O Alatise The 26th European Conference on Power Electronics and Applications	2025
Second life potential of electric vehicle power electronics for more circular economies O Alatise, R Wu, A Deb, JO Gonzalez Renewable and Sustainable Energy Reviews 210, 115238	2025
Rapid Electric Vehicle Charging Based on Silicon Carbide Enabled Medium Voltage DC Tranmission Systems A Deb, JO Gonzalez, R Wu, W Issa, S Jahdi, O Alatise IET Generation, Transmission & Distribution 19 (1), e70092	2025
Performance Evaluation of SiC MOSFET Hybrid Switches with Reverse Conducting IGBTs A Deb, JO Gonzalez, S Jahdi, R McMahon, R Wu, O Alatise 2024 IEEE Energy Conversion Congress and Exposition (ECCE), 7087-7094	2024
An online unified delay and slew rate regulation for current sharing in paralleled SiC power modules with active gate drivers Y Li, X Yuan, Y Zhang, K Wang, Z Wang, O Alatise, W Zhou IEEE Transactions on Industrial Electronics	2024
Impact of Temperature on Dynamics and Reliability of High-Voltage Silicon & 4H-SiC Bipolar Junction Transistors M Hosseinzadehlish, S Jahdi, X Yuan, R Yu, J Ortiz-Gonzalez, O Alatise 2024 IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe …	2024
Prospects and Challenges for SiC Power Devices in MMC-VSC Applications O Alatise, S Jahdi, PM Gammon, J Ortiz-Gonzalez, M Hosseinzadehlish, ... Scientific Books of Abstracts 8, 445-446	2024
Switching and Frequency Response Assessment of Photovoltaic Drivers and Their Potential for Different Applications W Issa, JO Gonzalez, O Alatise Micromachines 15 (7), 832	2024
The Impact of The Dead time on The Stability of 1.2 kV SiC MOSFET Body Diode Under Hard Switching with synchronous Rectification MA Karout, A Topkil, AH Malik, C Fisher, P Mawby, O Alatise, M Taha PCIM Europe 2024; International Exhibition and Conference for Power …	2024
Performance instability of 650 v p-gan gate hemt device under temperature-related positive gate bias stresses R Yu, S Jahdi, P Mellor, JO Gonzales, O Alatise PCIM Europe 2024; International Exhibition and Conference for Power …	2024
Dynamic Transients and Reliability of High-Voltage Silicon & 4H-SiC Bipolar Junction Transistors Under Avalanche and Short-Circuits M Hosseinzadehlish, S Jahdi, X Yuan, J Ortiz-Gonzalez, O Alatise PCIM Europe 2024; International Exhibition and Conference for Power …	2024
High-energy dynamic avalanche to failure by incremental source-voltage increase in symmetric double-trench & asymmetric trench SiC MOSFETs M Hosseinzadehlish, S Jahdi, X Yuan, J Ortiz-Gonzalez, O Alatise IEEE Open Journal of Industry Applications 5, 235-252	2024
Impact of Diode Technology on the Switching Performance of 3.3 kV SiC MOSFETs MA Karout, M Taha, CA Fisher, P Mawby, O Alatise 2024 36th International Symposium on Power Semiconductor Devices and ICs …	2024
A Virtual Platform for EV Drivetrain Testing Based on Low-Power Hardware in the Loop System O Zinchenko, S Mendy, X Rong, K Melnyk, A Saleh, O Alatise, P Mawby, ... 2024 IEEE International Conference on Industrial Technology (ICIT), 1-7	2024
Challenges in Implementing Power Losses Model for an Inverter in an EV Traction Emulation System X Rong, O Zinchenko, S Mendy, O Alatise, M Taha, P Mawby 2024 IEEE 3rd International Conference on Electrical Engineering, Big Data …	2024
Electrothermal power cycling of 15 kV SiC PiN diodes C Shen, S Jahdi, SP Munagala, N Simpson, P Mellor, O Alatise, ... Microelectronics Reliability 153, 115310	2024
Modelling SiC MOSFET module threshold voltage (VTH) and impact of parallel device ΔVTH on short circuit robustness A Deb, JO Gonzalez, S Jahdi, M Taha, PA Mawby, O Alatise Microelectronics Reliability 150, 115101	2023
Electrothermal power cycling of GaN and SiC cascode devices Y Gunaydin, S Jahdi, R Yu, X Yuan, O Alatise, JO Gonzalez Microelectronics Reliability 150, 115117	2023
Measurements and review of failure mechanisms and reliability constraints of 4H-SiC power MOSFETs under short circuit events R Yu, S Jahdi, O Alatise, J Ortiz-Gonzalez, SP Munagala, N Simpson, ... IEEE Transactions on Device and Materials Reliability 23 (4), 544-563	2023
Impact of Turn-Off Gate Voltage and Temperature on Threshold Voltage Instability in Pulsed Gate Voltage Stresses of SiC MOSFETs A Deb, J Ortiz-Gonzalez, M Taha, S Jahdi, PA Mawby, O Alatise Materials Science Forum 1091, 61-66	2023
Degradation Pattern of Parallel Symmetrical and Asymmetrical Double-Trench SiC MOSFETs under Repetitive Short Circuits R Yu, S Jahdi PCIM Europe 2023: International Exhibition and Conference for Power …	2023
Impact of temperature and base bias stress on the static characteristics of silicon and 4h-sic npn vertical power bjts M Hosseinzadehlish, S Jahdi, C Shen, X Yuan, I Laird, O Alatise, ... PCIM Europe 2023: International Exhibition and Conference for Power …	2023
Experimental analysis of short circuit robustness of gan and sic cascode devices Y Gunaydin, S Jahdi PCIM Europe 2023: International Exhibition and Conference for Power …	2023
Degradation analysis of planar, symmetrical and asymmetrical trench SiC MOSFETs under repetitive short circuit impulses R Yu, S Jahdi, P Mellor, L Liu, J Yang, C Shen, O Alatise, J Ortiz-Gonzalez IEEE Transactions on Power Electronics 38 (9), 10933-10946	2023
Medium Voltage Dc Systems for Rapid Electric Vehicle Charging A Deb, JO Gonzalez, S Jahdi, W Issa, O Alatise	2023
Silicon carbide enabled medium voltage DC transmission systems for rapid electric vehicle charging in the UK A Deb, JO Gonzalez, R Wu, W Issa, S Jahdi, O Alatise IET Conference Proceedings CP823 2023 (6), 2074-2078	2023
A review of power electronic devices for heavy goods vehicles electrification: Performance and reliability O Alatise, A Deb, E Bashar, J Ortiz Gonzalez, S Jahdi, W Issa Energies 16 (11), 4380	2023
Characterizing the Stability Limits of 1.2 kV SiC MOSFET Body Diodes Under Hard Switching MA Karout, M Taha, C Fisher, H Ayala, P Mawby, JO Gonzalez, O Alatise PCIM Europe 2023; International Exhibition and Conference for Power …	2023
Impact of diode characteristics on 1.2 kV SiC MOSFET and cascode JFET efficiency: Body diodes vs SiC Schottky barrier diodes MA Karout, M Taha, CA Fisher, A Deb, P Mawby, O Alatise 2023 IEEE Applied Power Electronics Conference and Exposition (APEC), 202-208	2023
On the Design Procedure of the Double Pulse Test Rig for WBG devices MA Karout, O Alatise, H Ayala, CA Fisher, P Mawby, M Taha 2023 IEEE Conference on Power Electronics and Renewable Energy (CPERE), 1-8	2023
Inductor design for an automotive propulsion drive power hardware in the loop test rig S Mendy, X Rong, O Zinchenko, A Saleh, M Tousizadeh, O Alatise, ... 2023 IEEE Conference on Power Electronics and Renewable Energy (CPERE), 1-7	2023
Benchmarking the robustness of Si and SiC MOSFETs: Unclamped inductive switching and short-circuit performance JO Gonzalez, A Deb, E Bashar, SN Agbo, S Jahdi, O Alatise Microelectronics Reliability 138, 114719	2022
Unclamped inductive stressing of GaN and SiC Cascode power devices to failure at elevated temperatures Y Gunaydin, S Jahdi, X Yuan, R Yu, C Shen, SP Munagala, A Hopkins, ... Microelectronics Reliability 138, 114711	2022
FEM-based analysis of avalanche ruggedness of high voltage SiC Merged-PiN-Schottky and Junction-Barrier-Schottky diodes C Shen, R Yu, S Jahdi, P Mellor, SP Munagala, A Hopkins, N Simpson, ... Microelectronics Reliability 138, 114686	2022
Design of a gate-driving cell for enabling extended SiC MOSFET voltage blocking W Issa, J Ortiz Gonzalez, O Alatise Energies 15 (20), 7768	2022
Electrothermal ruggedness of high voltage sic merged-pin-schottky diodes under inductive avalanche & surge current stress C Shen, S Jahdi, J Yang, O Alatise, J Ortiz-Gonzalez, P Mellor 2022 IEEE Energy Conversion Congress and Exposition (ECCE), 1-7	2022
Unipolar and Bipolar Pulsed Gate Stresses and Threshold Voltage Shifts in GaN e-HEMTs A Deb, JO Gonzalez, E Bashar, M Taha, M Tousizadeh, S Jahdi, P Mawby, ... 2022 IEEE Energy Conversion Congress and Exposition (ECCE), 1-7	2022
Positive and negative bias temperature instability on crosstalk-stressed symmetrical & asymmetrical double-trench sic mosfets J Yang, S Jahdi, B Stark, C Shen, O Alatise, J Ortiz-Gonzalez, P Mellor 2022 IEEE Energy Conversion Congress and Exposition (ECCE), 1-7	2022
Influence of the SiC JFET Gate Impedance on the Off-State Voltage Balance in Cascode Configuration S Mendy, NS Agbo, JO Gonzalez, O Alatise 2022 IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe …	2022
Investigation of repetitive short circuit stress as a degradation metric in symmetrical and asymmetrical double-trench SiC power MOSFETs R Yu, S Jahdi, P Mellor, J Yang, C Shen, L Liu, O Alatise, J Ortiz-Gonzalez 2022 IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe …	2022
On the repeatability and reliability of threshold voltage measurements during gate bias stresses in wide bandgap power devices A Deb, JO Gonzalez, E Bashar, S Jahdi, M Taha, P Mawby, O Alatise 2022 IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe …	2022
An investigation of the drain-source leakage current early transients during HTRB reliability tests H Ayala, MA Karout, JO Gonzalez, O Alatise, L Ran, P Mawby, M Taha 2022 IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe …	2022
Analysis of 1^st & 3^rd Quadrant Electrothermal Robustness of Symmetrical and Asymmetrical Double- Trench SiC Power MOSFETs Under UIS M Hosseinzadehlish, S Jahdi, X Yuan, C Shen, Y Gunaydin, I Laird, ... 2022 IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe …	2022
Impact of threshold voltage shifting on junction temperature sensing in GaN HEMTs B Etoz, JO Gonzalez, A Deb, S Jahdi, O Alatise 2022 24th European Conference on Power Electronics and Applications (EPE'22 …	2022
Investigation of the static performance and avalanche reliability of high voltage 4h-sic merged-pin-schottky diodes C Shen, S Jahdi, P Mellor, J Yang, E Bashar, J Ortiz-Gonzalez, O Alatise 2022 24th European Conference on Power Electronics and Applications (EPE'22 …	2022
Electrothermal Modelling and Measurements of Parallel-Connected V_THMismatched SiC MOSFETs under Inductive Load Switching S Mendy, RZ Wu, J Ortiz-Gonzalez, O Alatise Materials Science Forum 1062, 533-538	2022
Investigation on threshold voltage instability under sweeping and DC gate bias stressing of SiC symmetrical and asymmetrical double-trench MOSFETs J Yang, S Jahdi, B Stark, J Ortiz-Gonzalez, R Wu, O Alatise, P Mellor IET Conference Proceedings CP799 2022 (4), 301-307	2022
A Comparison of the Short Circuit Performance of 650 V SiC Planar MOSFETs, Trench MOSFETs and Cascode JFETs O Alatise, B Erfan, R Wu, N Agbo, S Mendy, S Jahdi, J Ortiz Gonzalez, ... IET Conference Proceedings CP799 2022 (4), 335-339	2022
The impact of electrothermal stress on threshold voltage drift of gan and SIC cascode devices Y Gunaydin, S Jahdi, X Yuan, J Yang, B Stark, J Ortiz-Gonzalez, R Wu, ... 11th International Conference on Power Electronics, Machines and Drives …	2022
Analysis of on-state static and dynamic transients of high voltage 4H-SIC Merged-PiN-Schottky diode C Shen, S Jahdi, P Mellor, J Yang, E Bashar, O Alatise, J Ortiz-Gonzalez IET Conference Proceedings CP799 2022 (4), 314-320	2022
Real time estimation of power transistor junction temperature for motor drive application M Taha, M Tousizadeh, A Deb, O Alatise, L Ran, P Mawby 11th International Conference on Power Electronics, Machines and Drives …	2022
Transfer iv and threshold voltage drift of gan and sic cascode discrete devices under gate bias stress Y Gunaydin, S Jahdi, X Yuan, B Stark, J Ortiz-Gonzalez, E Bashar, ... PCIM Europe 2022; International Exhibition and Conference for Power …	2022
A review of short circuit performance in 650 v power devices: Sic mosfets, silicon super-junction mosfets, sic cascode jfets, silicon mosfets and silicon igbts E Bashar, N Agbo, R Wu, S Mendy, S Jahdi, M Jennings, A Withey, ... PCIM Europe 2022; International Exhibition and Conference for Power …	2022
Threshold voltage drift and on-resistance of SiC symmetrical and asymmetrical double-trench MOSFETs under gate bias stress J Yang, S Jahdi, B Stark, P Mellor, R Wu, J Ortiz-Gonzalez, O Alatise PCIM Europe 2022; International Exhibition and Conference for Power …	2022
Crosstalk induced shoot-through in bti-stressed symmetrical & asymmetrical double-trench sic power mosfets J Yang, S Jahdi, B Stark, O Alatise, J Ortiz-Gonzalez, R Wu, P Mellor IEEE Open Journal of the Industrial Electronics Society 3, 188-202	2022
Impact of carriers injection level on transients of discrete and paralleled silicon and 4h-sic npn bjts C Shen, S Jahdi, J Yang, O Alatise, J Ortiz-Gonzalez, R Wu, P Mellor IEEE Open Journal of the Industrial Electronics Society 3, 65-80	2022
Comparison of short circuit failure modes in sic planar mosfets, sic trench mosfets and sic cascode jfets E Bashar, R Wu, N Agbo, S Mendy, S Jahdi, JO Gonzalez, O Alatise 2021 IEEE 8th Workshop on Wide Bandgap Power Devices and Applications (WiPDA …	2021
Simulations and measurements of failure modes in SiC Cascode JFETs under short circuit conditions SN Agbo, E Bashar, R Wu, S Mendy, JO Gonzalez, O Alatise 2021 IEEE 22nd Workshop on Control and Modelling of Power Electronics …	2021
Measurement and simulation of short circuit current sharing under parallel connection: Sic mosfets and sic cascode jfets R Wu, SN Agbo, S Mendy, E Bashar, S Jahdi, O Gonzalez, O Alatise Microelectronics Reliability 126, 114271	2021
Performance of parallel connected sic mosfets under short circuits conditions R Wu, S Mendy, N Agbo, JO Gonzalez, S Jahdi, O Alatise Energies 14 (20), 6834	2021
Impact of temperature and switching rate on properties of crosstalk on symmetrical & asymmetrical double-trench SiC power MOSFET J Yang, S Jahdi, B Stark, R Wu, O Alatise, JO Gonzalez IECON 2021–47th Annual Conference of the IEEE Industrial Electronics Society …	2021
Power Device Losses in Two-Level Converters with Direct Current Controllers for Grid Connected Applications JO Gonzalez, D Pérez-Estévez, R Wu, J Doval-Gandoy, P Mawby, ... 2021 IEEE Energy Conversion Congress and Exposition (ECCE), 3154-3159	2021
Performance of wide-bandgap discrete and module cascodes at sub-1 kV: GaN vs. SiC Y Gunaydin, S Jahdi, O Alatise, JO Gonzalez, R Wu, B Stark, M Hedayati, ... Microelectronics reliability 125, 114362	2021
Expanding EV charging capacity in distribution networks: a case study for charging EVs at work O Alatise, A Karlsson, A Deb, R Wu, J Ortiz-Gonzalez IET Conference Proceedings CP785 2021 (6), 2945-2949	2021
Impact of Linear-PWM and MPC controllers on the power device losses in a grid-tied two-level inverter JO Gonzalez, D Pérez-Estévez, R Wu, J Doval-Gandoy, O Alatise 2021 23rd European Conference on Power Electronics and Applications (EPE'21 …	2021
Current sharing of parallel sic mosfets under short circuit conditions R Wu, S Mendy, JO Gonzalez, S Jahdi, O Alatise 2021 23rd European Conference on Power Electronics and Applications (EPE'21 …	2021
Analysis of dynamic transients of high voltage silicon and 4h-sic npn bjts C Shen, S Jahdi, P Mellor, X Yuan, O Alatise, J Ortiz-Gonzalez PCIM Europe digital days 2021; International Exhibition and Conference for …	2021
Investigation of performance of double-trench SiC power MOSFETs in forward and reverse quadrant operation J Yang, S Jahdi, B Stark, P Mellor, O Alatise, J Ortiz-Gonzalez PCIM Europe digital days 2021; International Exhibition and Conference for …	2021
Analysis of the 1st and 3rd quadrant transients of symmetrical and asymmetrical double-trench SiC power MOSFETs J Yang, S Jahdi, B Stark, O Alatise, J Ortiz-Gonzalez, P Mellor IEEE Open Journal of Power Electronics 2, 265-276	2021
Prospects and challenges of 4h-sic thyristors in protection of hb-mmc-vsc-hvdc converters C Shen, S Jahdi, O Alatise, J Ortiz-Gonzalez, A Aithal, P Mellor IEEE Open Journal of Power Electronics 2, 145-154	2021
Performance of Parallel Connected SiC MOSFETs under Short Circuits Conditions. Energies 2021, 14, 6834 R Wu, S Mendy, N Agbo, JO Gonzalez, S Jahdi, O Alatise s Note: MDPI stays neutral with regard to jurisdictional claims in published …	2021
A Case Study of Power Electronics in Wind Energy Conversion R Wu, JA Ortiz-Gonzalez, A Alatise The 10th International Conference on Power Electronics, Machines and Drives …	2020
Characterisation of unclamped inductive switching in sic cascode jfets NS Agbo, J Ortiz-Gonzalez, R Wu, O Alatise The 10th International Conference on Power Electronics, Machines and Drives …	2020
Impact of temperature and switching rate on forward and reverse conduction of gan and sic cascode devices: A technology evaluation Y Gunaydin, S Jahdi, O Alatise, JO Gonzalez, M Hedayati, B Stark, J Yang, ... IET Conference Proceedings CP766 2020 (7), 782-787	2020
Optimisation of the gate voltage in SiC MOSFETs: Efficiency vs reliability J Ortiz Gonzalez, R Wu, H Wu, X Wang, V Pickert, P Mawby, O Alatise IET Conference Proceedings CP766 2020 (7), 820-825	2020
Investigation into the switching transient of SiC MOSFET using voltage/current source gate driver H Wu, X Wang, J Ortiz-Gonzalez, O Alatise, V Pickert IET Conference Proceedings CP766 2020 (7), 657-662	2020
Bias temperature instability and junction temperature measurement using electrical parameters in SiC power MOSFETs JO Gonzalez, O Alatise IEEE Transactions on Industry Applications 57 (2), 1664-1676	2020
Analysis of cyclic spontaneous switchings in GaN & SiC cascodes by snappy turn-off currents Y Gunaydin, S Jahdi, O Alatise, JA Ortiz-Gonzalez, A Aithal, X Yuan, ... Microelectronics reliability 114, 113752	2020
UIS performance and ruggedness of stand-alone and cascode SiC JFETs SN Agbo, JO Gonzalez, R Wu, S Jahdi, O Alatise Microelectronics Reliability 114, 113803	2020
Trade-offs between gate oxide protection and performance in SiC MOSFETs JO Gonzalez, R Wu, O Alatise 2020 IEEE Energy Conversion Congress and Exposition (ECCE), 690-697	2020
Characterizing threshold voltage shifts and recovery in Schottky gate and ohmic gate GaN HEMTs JO Gonzalez, B Etoz, O Alatise 2020 IEEE Energy Conversion Congress and Exposition (ECCE), 217-224	2020
Performance of wide-bandgap gallium nitride vs silicon carbide cascode transistors Y Gunaydin, S Jahdi, O Alatise, JO Gonzalez, R Wu, B Stark, M Hedayati, ... 2020 IEEE Energy Conversion Congress and Exposition (ECCE), 239-245	2020
Gate stresses and threshold voltage instability in normally-OFF GaN HEMTs JO Gonzalez, B Etoz, O Alatise 2020 22nd European Conference on Power Electronics and Applications (EPE'20 …	2020
The 30th IEEE International Symposium on Industrial Electronics SJ Wu, O Alatise, CJ MOSFETs	2020
Impact of BTI-induced threshold voltage shifts in shoot-through currents from crosstalk in SiC MOSFETs JO Gonzalez, O Alatise IEEE Transactions on Power Electronics 36 (3), 3279-3291	2020
Performance of SiC cascode JFETs under single and repetitive avalanche pulses SN Agbo, J Ortiz-Gonzalez, O Alatise Microelectronics Reliability 110, 113644	2020
Non-Intrusive Methodologies for Characterization of Bias Temperature Instability in SiC Power MOSFETs JO Gonzalez, O Alatise, P Mawby 2020 IEEE International Reliability Physics Symposium (IRPS), 1-10	2020
Fast switching SiC cascode JFETs for EV traction inverters R Wu, JO Gonzalez, Z Davletzhanova, P Mawby, O Alatise 2020 IEEE applied power electronics conference and exposition (APEC), 3489-3496	2020
Gate stresses and threshold voltage instability in normally OFF GaN HEMTs JA Ortiz Gonzalez, B Etoz, OM Alatise IEEE	2020
The potential of SiC cascode JFETs in electric vehicle traction inverters R Wu, JO Gonzalez, Z Davletzhanova, PA Mawby, O Alatise IEEE Transactions on Transportation Electrification 5 (4), 1349-1359	2019
Performance and reliability review of 650 V and 900 V silicon and SiC devices: MOSFETs, cascode JFETs and IGBTs JO Gonzalez, R Wu, S Jahdi, O Alatise IEEE Transactions on Industrial Electronics 67 (9), 7375-7385	2019
Novel method for evaluation of negative bias temperature instability of SiC MOSFETs J Ortiz-Gonzalez, O Alatise, PA Mawby Materials Science Forum 963, 749-752	2019
Crosstalk in SiC power MOSFETs for evaluation of threshold voltage shift caused by bias temperature instability JO Gonzalez, O Alatise 2019 21st European Conference on Power Electronics and Applications (EPE'19 …	2019
Dynamic characterization of SiC and GaN devices with BTI stresses JO Gonzalez, M Hedayati, S Jahdi, BH Stark, O Alatise microelectronics reliability 100, 113389	2019
Robustness and reliability review of Si and SiC FET devices for more-electric-aircraft applications JO Gonzalez, R Wu, SN Agbo, O Alatise Microelectronics Reliability 100, 113324	2019
Analysis of DC offset in fault current caused by machines in a medium voltage distribution network E Bashar, Q Han, R Wu, L Ran, O Alatise, S Jupe The Journal of Engineering 2019 (17), 3494-3499	2019
Condition monitoring for solder layer degradation in multi‐device system based on neural network B Hu, S Konaklieva, S Xu, J Ortiz‐Gonzalez, L Ran, C Ng, P McKeever, ... The Journal of Engineering 2019 (17), 3582-3586	2019
Challenges of junction temperature sensing in SiC power MOSFETs JO Gonzalez, O Alatise 2019 10th International Conference on Power Electronics and ECCE Asia (ICPE …	2019
Characterization of BTI in SiC MOSFETs using third quadrant characteristics JO Gonzalez, O Alatise, P Mawby 2019 31st International Symposium on Power Semiconductor Devices and ICs …	2019
Impact of the gate oxide reliability of SiC MOSFETs on the junction temperature estimation using temperature sensitive electrical parameters JO Gonzalez, O Alatise 2018 IEEE Energy Conversion Congress and Exposition (ECCE), 837-844	2018
Safe-operating-area of snubberless series connected silicon and SiC power devices Z Davletzhanova, T Dai, O Alatise, JO Gonzalez, P Mawby, R Bonyadi, ... 2018 IEEE Energy Conversion Congress and Exposition (ECCE), 1875-1881	2018
Impact of leakage currents on voltage sharing in series connected SiC power MOSFETs and silicon IGBT devices Z Davletzhanova, O Alatise, R Bonyadi, JO Gonzalez, CW Chan, ... 2018 20th European Conference on Power Electronics and Applications (EPE'18 …	2018
A Novel Non-Intrusive Technique for BTI Characterization in SiC mosfets JAO Gonzalez, O Alatise IEEE Transactions on Power Electronics 34 (6), 5737-5747	2018
Bias temperature instability and condition monitoring in SiC power MOSFETs JO Gonzalez, O Alatise Microelectronics Reliability 88, 557-562	2018
Lifetime Enhancement of 4H-SiC PiN Diodes Using High Temperature Oxidation Treatment Y Bonyadi, PM Gammon, O Alatise, R Bonyadi, PA Mawby Materials Science Forum 924, 440-443	2018
Characterization of Voltage Divergence in Series Connected SiC Trench MOSFETs and Si IGBTs Z Davletzhanova, O Alatise, R Bonyadi, JO Gonzalez, T Dai PCIM Europe 2018; International Exhibition and Conference for Power …	2018
A Technology Analysis of Voltage Sharing in Series Connected Power Devices Z Davletzhanova, O Alatise, R Bonyadi, J Ortiz-Gonzalez, T Dai, ... 2018 International Power Electronics Conference (IPEC-Niigata 2018-ECCE Asia …	2018
Study on lifetime prediction considering fatigue accumulative effect for die‐attach solder layer in an IGBT module W Lai, M Chen, L Ran, S Xu, L Pan, O Alatise, P Mawby IEEJ Transactions on Electrical and Electronic Engineering 13 (4), 613-621	2018
Failure and reliability analysis of a SiC power module based on stress comparison to a Si device B Hu, JO Gonzalez, L Ran, H Ren, Z Zeng, W Lai, B Gao, O Alatise, H Lu, ... IEEE Transactions on device and materials reliability 17 (4), 727-737	2017
Impact of the gate driver voltage on temperature sensitive electrical parameters for condition monitoring of SiC power MOSFETs JO Gonzalez, O Alatise Microelectronics Reliability 76, 470-474	2017
Thermal effects in power devices L Alatise, JO Gonzalez ECPE Workshop-Condition and Health Monitoring in Power Electronics 1	2017
Pressure contact multi-chip packaging of SiC Schottky diodes JO Gonzalez, O Alatise, P Mawby, AM Aliyu, A Castellazzi 2017 29th International Symposium on Power Semiconductor Devices and IC's …	2017
Electrothermal stresses in SiC MOSFET and Si IGBT 3L-NPC converters for motor drive applications Z Davletzhanova, O Alatise, JO Gonzalez, S Konaklieva, R Bonyadi PCIM Europe 2017; International Exhibition and Conference for Power …	2017
Impact of temperature imbalance on junction temperature identification for multiple chip modules using TSEPs JO Gonzalez, O Alatise, L Ran, P Mawby PCIM Europe 2017; International Exhibition and Conference for Power …	2017
A multiphysics modeling and experimental analysis of pressure contacts in power electronics applications P Rajaguru, JA Ortiz-Gonzalez, H Lu, C Bailey, O Alatise IEEE Transactions on Components, Packaging and Manufacturing Technology 7 (6 …	2017
Evaluation of SiC Schottky diodes using pressure contacts JO Gonzalez, O Alatise, AM Aliyu, P Rajaguru, A Castellazzi, L Ran, ... IEEE Transactions on Industrial Electronics 64 (10), 8213-8223	2017
Experimental Investigation on the Effects of Narrow Junction Temperature Cycles on Die-Attach Solder Layer in an IGBT Module (EI 收录) W Lai, M Chen, L Ran, S Xu, N Jiang, X Wang, O Alatise, P Mawby	2017
Evaluation of the impact of the physical dimensions and material of the semiconductor chip on the reliability of Sn3. 5Ag solder interconnect in power electronic module: a … P Rajaguru, H Lu, C Bailey, J Ortiz-Gonzalez, O Alatise Microelectronics Reliability 68, 77-85	2017
An investigation of temperature-sensitive electrical parameters for SiC power MOSFETs JO Gonzalez, O Alatise, J Hu, L Ran, PA Mawby IEEE Transactions on Power Electronics 32 (10), 7954-7966	2016
Electrothermal considerations for power cycling in SiC technologies JA Ortiz Gonzalez, OM Alatise, N Nobeen, J Hu, L Ran, PA Mawby Proceedings of CIPS 2016; 9th International Conference on Integrated Power …	2016
Enabling high reliability power modules: a multidisciplinary task JA Ortiz Gonzalez, L Ran, A Mohamed Motalab Ali Soli, Z Davletzhanova, ...	2016
The impact of triangular defects on electrical characteristics and switching performance of 3.3 kV 4H-SiC PiN diode Y Bonyadi, P Gammon, R Bonyadi, O Alatise, J Hu, S Hindmarsh, ... 2016 IEEE Energy Conversion Congress and Exposition (ECCE), 1-5	2016
An initial consideration of silicon carbide devices in pressure-packages JAO Gonzalez, O Alatise, L Ran, P Mawby, P Rajaguru, C Bailey 2016 IEEE Energy Conversion Congress and Exposition (ECCE), 1-7	2016
Comparative electrothermal analysis between SiC Schottky and silicon PiN diodes: Paralleling and thermal considerations J Hu, O Alatise, JAO Gonzalez, R Bonyadi, L Ran, P Mawby 2016 18th European Conference on Power Electronics and Applications (EPE'16 …	2016
Development and characterisation of pressed packaging solutions for high-temperature high-reliability SiC power modules JO Gonzalez, AM Aliyu, O Alatise, A Castellazzi, L Ran, P Mawby Microelectronics Reliability 64, 434-439	2016
Enabling high reliability power modules: A multidisciplinary task JO Gonzalez, L Ran, AMMA Soli, Z Davletzhanova, O Alatise, P Mawby, ... 2016 International Symposium on 3D Power Electronics Integration and …	2016
Study on the effects of small swing of junction temperature cycles on solder layer in an IGBT module Y Chen, M Chen, W Lai, L Ran, S Xu, N Jiang, O Alatise, P Mawby 2016 IEEE 8th International Power Electronics and Motion Control Conference …	2016
Output harmonic analysis as a potential method of condition monitoring Z Davletzhanova, O Alatise, JAO Gonzalez, R Bonyadi, L Ran, P Mawby 8th IET International Conference on Power Electronics, Machines and Drives …	2016
Avalanche ruggedness of parallel connected diodes: SiC Schottky diodes vs silicon PiN diodes J Hu, O Alatise, JAO Gonzalez, L Ran, P Mawby 8th IET International Conference on Power Electronics, Machines and Drives …	2016
Temperature sensitive electrical parameters for condition monitoring in SiC power MOSFETs JO Gonzalez, O Alatise, J Hu, L Ran, P Mawby 8th IET International Conference on Power Electronics, Machines and Drives …	2016
Study on the lifetime characteristics of power modules under power cycling conditions W Lai, M Chen, L Ran, S Xu, H Qin, O Alatise, PA Mawby IET Power Electronics 9 (5), 1045-1052	2016
Experimental investigation on the effects of narrow junction temperature cycles on die-attach solder layer in an IGBT module W Lai, M Chen, L Ran, S Xu, N Jiang, X Wang, O Alatise, P Mawby IEEE Transactions on Power Electronics 32 (2), 1431-1441	2016
Design and control of a compensated submodule testing scheme for modular multilevel converter Y Tang, L Ran, O Alatise, P Mawby 2016 IEEE Applied Power Electronics Conference and Exposition (APEC), 2645-2651	2016
Compact electrothermal models for unbalanced parallel conducting Si-IGBTs R Bonyadi, O Alatise, J Hu, Z Davletzhanova, Y Bonyadi, J Ortiz-Gonzalez, ... 2016 IEEE Applied Power Electronics Conference and Exposition (APEC), 253-260	2016
Electrothermal Considerations for Power Cycling in SiC Technologies JAO Gonzalez, O Alatise, N Nobeen, J Hu, L Ran, P Mawby CIPS 2016; 9th International Conference on Integrated Power Electronics …	2016
Capacitor selection for modular multilevel converter Y Tang, L Ran, O Alatise, P Mawby IEEE Transactions on Industry Applications 52 (4), 3279-3293	2016
Improved testing capability of the model-assisted testing scheme for a modular multilevel converter Y Tang, L Ran, O Alatise, P Mawby IEEE Transactions on Power Electronics 31 (11), 7823-7836	2016
Low Stress Cycle Effect in IGBT Power Module Die-Attach Lifetime Modeling W Lai, M Chen, L Ran, O Alatise, S Xu, P Mawby IEEE Transactions on Power Electronics 31 (9), 6575-6585	2015
Robustness and balancing of parallel-connected power devices: SiC versus CoolMOS J Hu, O Alatise, JAO Gonzalez, R Bonyadi, P Alexakis, L Ran, P Mawby IEEE Transactions on Industrial Electronics 63 (4), 2092-2102	2015
Temperature and switching rate dependence of crosstalk in Si-IGBT and SiC power modules S Jahdi, O Alatise, JAO Gonzalez, R Bonyadi, L Ran, P Mawby IEEE Transactions on Industrial Electronics 63 (2), 849-863	2015
Electro-thermo-mechanical modelling and analysis of the press pack diode in power electronics P Rajaguru, H Lu, C Bailey, J Ortiz-Gonzalez, O Alatise 2015 21st International Workshop on Thermal Investigations of ICs and …	2015
Comparative analysis of false turn-on in silicon bipolar and SiC unipolar power devices S Jahdi, O Alatise, JO Gonzalez, L Ran, P Mawby 2015 IEEE Energy Conversion Congress and Exposition (ECCE), 2239-2246	2015
The effect of electrothermal nonuniformities on parallel connected SiC power devices under unclamped and clamped inductive switching J Hu, O Alatise, JAO Gonzalez, R Bonyadi, L Ran, PA Mawby IEEE Transactions on Power Electronics 31 (6), 4526-4535	2015
Investigation of parasitic turn-ON in silicon IGBT and Silicon Carbide MOSFET devices: A technology evaluation S Jahdi, O Alatise, J Ortiz-Gonzalez, P Gammon, L Ran, P Mawby 2015 17th European Conference on Power Electronics and Applications (EPE'15 …	2015
Physics-based modelling and experimental characterisation of parasitic turn-on in IGBTs R Bonyadi, O Alatise, S Jahdi, J Ortiz-Gonzalez, Z Davletzhanova, L Ran, ... 2015 17th European Conference on Power Electronics and Applications (EPE'15 …	2015
Finite element modelling and experimental characterisation of paralleled SiC MOSFET failure under avalanche mode conduction J Hu, O Alatise, JA Ortiz-Gonzalez, P Alexakis, L Ran, P Mawby 2015 17th European Conference on Power Electronics and Applications (EPE'15 …	2015
Modeling of temperature dependent parasitic gate turn-on in silicon IGBTs R Bonyadi, O Alatise, S Jahdi, JO Gonzalez, L Ran, PA Mawby 2015 9th International Conference on Power Electronics and ECCE Asia (ICPE …	2015
Analysis of power device failure under avalanche mode Conduction P Alexakis, O Alatise, J Hu, S Jahdi, JO Gonzalez, L Ran, PA Mawby 2015 9th International Conference on Power Electronics and ECCE Asia (ICPE …	2015
A model assisted testing scheme for modular multilevel converter Y Tang, L Ran, O Alatise, P Mawby IEEE Transactions on Power Electronics 31 (1), 165-176	2015
Offshore low frequency AC transmission with back-to-back modular multilevel converter (MMC) Y Tang, PB Wyllie, J Yu, XM Wang, L Ran, O Alatise 11th IET International Conference on AC and DC Power Transmission, 1-8	2015
Compact electrothermal reliability modeling and experimental characterization of bipolar latchup in SiC and CoolMOS power MOSFETs R Bonyadi, O Alatise, S Jahdi, J Hu, JAO Gonzalez, L Ran, PA Mawby IEEE Transactions on Power Electronics 30 (12), 6978-6992	2015
Power Semiconductor Device Reliability O Alatise University of Warwick	2015
Capacitor selection for modular multilevel converter Y Tang, L Ran, O Alatise, P Mawby 2014 IEEE Energy Conversion Congress and Exposition (ECCE), 2080-2087	2014
Electrothermal modeling and characterization of SiC Schottky and silicon PiN diodes switching transients S Jahdi, O Alatise, P Alexakis, L Ran, P Mawby 2014 IEEE Energy Conversion Congress and Exposition (ECCE), 2817-2823	2014
Evaluation of commercially available SiC devices and packaging materials for operation up to 350 C D Hamilton, M Jennings, Y Sharma, C Fisher, O Alatise, P Mawby 2014 IEEE Energy Conversion Congress and Exposition (ECCE), 4381-4387	2014
Investigating the reliability of SiC MOSFET body diodes using Fourier series modelling R Bonyadi, O Alatise, S Jahdi, J Hu, L Evans, PA Mawby 2014 IEEE Energy Conversion Congress and Exposition (ECCE), 443-448	2014
Modeling of turn-off transient energy in IGBT controlled silicon Pin diodes S Jahdi, O Alatise, P Mawby 2014 16th European Conference on Power Electronics and Applications, 1-9	2014
Accurate analytical modeling for switching energy of PiN diodes reverse recovery S Jahdi, O Alatise, L Ran, P Mawby IEEE Transactions on Industrial Electronics 62 (3), 1461-1470	2014
An analysis of the switching performance and robustness of power MOSFETs body diodes: A technology evaluation S Jahdi, O Alatise, R Bonyadi, P Alexakis, CA Fisher, JAO Gonzalez, ... IEEE Transactions on Power Electronics 30 (5), 2383-2394	2014
Analytical Modeling of Switching Energy of Silicon Carbide Schottky Diodes as Functions of dI /dt and Temperature S Jahdi, O Alatise, L Ran, P Mawby IEEE Transactions on Power Electronics 30 (6), 3345-3355	2014
The impact of temperature and switching rate on the dynamic characteristics of silicon carbide Schottky barrier diodes and MOSFETs S Jahdi, O Alatise, P Alexakis, L Ran, P Mawby IEEE Transactions on Industrial Electronics 62 (1), 163-171	2014
Improved electrothermal ruggedness in SiC MOSFETs compared with silicon IGBTs P Alexakis, O Alatise, J Hu, S Jahdi, L Ran, PA Mawby IEEE Transactions on Electron Devices 61 (7), 2278-2286	2014
Temperature and dI_DS/dt Dependence of the Switching Energy of SiC Schottky Diodes in Clamped Inductive Switching Applications S Jahdi, O Alatise, PA Mawby Materials Science Forum 778, 816-819	2014
An evaluation of silicon carbide unipolar technologies for electric vehicle drive-trains S Jahdi, O Alatise, C Fisher, L Ran, P Mawby IEEE Journal of emerging and selected topics in Power Electronics 2 (3), 517-528	2014
On the performance of voltage source converters based on silicon carbide technology S Jahdi, O Alatise, P Mawby Intelec 2013; 35th International Telecommunications Energy Conference, SMART …	2013
The impact of silicon carbide technology on grid-connected distributed energy resources S Jahdi, O Alatise, PA Mawby IEEE PES ISGT Europe 2013, 1-5	2013
Modeling power converters using hard switched silicon carbide MOSFETs and Schottky barrier diodes P Alexakis, O Alatise, L Ran, P Mawby 2013 15th European Conference on Power Electronics and Applications (EPE), 1-9	2013
Improved energy efficiency using an IGBT/SiC-Schottky diode pair NA Parker-Allotey, DP Hamilton, O Alatise, MR Jennings, PA Mawby, ... Materials Science Forum 717, 1147-1150	2012
Modeling the electrothermal stability of power MOSFETs during switching transients O Alatise, NA Parker-Allotey, P Mawby IEEE electron device letters 33 (7), 1039-1041	2012
The dynamic performance of SiC Schottky Barrier diodes with parasitic inductances over a wide temperature range O Alatise, NA Parker-Allotey, P Mawby 6th IET International Conference on Power Electronics, Machines and Drives …	2012
The impact of parasitic inductance on the performance of silicon–carbide Schottky barrier diodes O Alatise, NA Parker-Allotey, D Hamilton, P Mawby IEEE Transactions on Power Electronics 27 (8), 3826-3833	2012
Super-junction trench MOSFETs for improved energy conversion efficiency O Alatise, NA Adotei, P Mawby 2011 2nd IEEE PES International Conference and Exhibition on Innovative …	2011
Conduction and switching loss comparison between an IGBT/Si-PiN diode pair and an IGBT/SiC-Schottky diode pair NA Parker-Allotey, O Alatise, D Hamilton, M Jennings, P Mawby, R Nash, ... 2011 2nd IEEE PES International Conference and Exhibition on Innovative …	2011
Trench depth optimization for energy efficient discrete power trench MOSFETs O Alatise, NA Parker-Allotey, M Jennings, P Mawby, I Kennedy, G Petkos 2011 Proceedings of the European Solid-State Device Research Conference …	2011
Modeling the impact of the trench depth on the gate–drain capacitance in power MOSFETs O Alatise, NA Parker-Allotey, M Jennings, P Mawby, I Kennedy, G Petkos IEEE electron device letters 32 (9), 1269-1271	2011
Reliability of repetitively avalanched wire-bonded low-voltage discrete power trench n-MOSFETs O Alatise, I Kennedy, G Petkos, A Koh IEEE Transactions on Device and Materials Reliability 11 (1), 157-163	2010
Improved self-gain in deep submicrometer strained silicon–germanium pMOSFETs with HfSiOx/TiSiN gate stacks OM Alatise, SH Olsen, AG O’Neill, P Majhi Microelectronic engineering 87 (11), 2196-2199	2010
Repetitive avalanche cycling of low-voltage power trench n-MOSFETs O Alatise, I Kennedy, G Petkos, K Heppenstall, K Khan, J Parkin, A Koh, ... 2010 Proceedings of the European Solid State Device Research Conference, 273-276	2010
Linearity and mobility degradation in strained Si MOSFETs with thin gate dielectrics O Alatise, S Olsen, A O’Neill Solid-state electronics 54 (6), 628-634	2010
The Impact of Trench Depth on the Reliability of Repetitively Avalanched Low-Voltage Discrete Power Trench nMOSFETs O Alatise, I Kennedy, G Petkos, K Heppenstall, J Parkin, K Khan, A Koh, ... IEEE Electron Device Letters 31 (7), 713-715	2010
The impact of repetitive unclamped inductive switching on the electrical parameters of low-voltage trench power nMOSFETs O Alatise, I Kennedy, G Petkos, K Heppenstall, K Khan, J Parkin, A Koh, ... IEEE Transactions on electron devices 57 (7), 1651-1658	2010
The impact of self-heating and SiGe strain-relaxed buffer thickness on the analog performance of strained Si nMOSFETs OM Alatise, KSK Kwa, SH Olsen, AG O’Neill Solid-State Electronics 54 (3), 327-335	2010
Understanding linear-mode robustness in low-voltage trench power MOSFETs OM Alatise, I Kennedy, G Petkos, K Khan, A Koh, P Rutter IEEE Transactions on Device and Materials Reliability 10 (1), 123-129	2009
Improved analog performance in strained-Si MOSFETs using the thickness of the silicon–germanium strain-relaxed buffer as a design parameter OM Alatise, KSK Kwa, SH Olsen, AG O'Neill IEEE transactions on electron devices 56 (12), 3041-3048	2009
Performance Enhancements in Scaled Strained-SiGe pMOSFETs With Gate Stacks OM Alatise, SH Olsen, NEB Cowern, AG O'Neill, P Majhi IEEE transactions on electron devices 56 (10), 2277-2284	2009
Performance Enhancements in Scaled Strained SiGe OM Alatise, SH Cowern, N O'Neill, AG Majhi policies. Please scroll down to view the document	2009
A design methodology for maximizing the voltage gain of strained Si MOSFETs using the thickness of the silicon-germanium strain relaxed buffer as a design parameter O Alatise, K Kwa, S Olsen, A O'Neill 2009 International Semiconductor Device Research Symposium (ISDRS 2009), 1-2	2009
Nanoscale strain characterisation for ultimate CMOS and beyond SH Olsen, P Dobrosz, RMB Agaiby, YL Tsang, O Alatise, SJ Bull, ... Materials science in semiconductor processing 11 (5-6), 271-278	2008
Improved analog performance of strained Si n-MOSFETs on thin SiGe strained relaxed buffers OM Alatise, KSK Kwa, SH Olsen, AG O'Neill ESSDERC 2008-38th European Solid-State Device Research Conference, 99-102	2008
Mixed-signal performance enhancements in strained silicon/silicon-germanium metal oxide on semiconductor field effect transistors OM Alatise University of Newcastle Upon Tyne	2008
Strained Si/strained SiGe/relaxed SiGe structures: identifying roughness due to compressed SiGe and its impact on high mobility MOSFETs E Escobedo-Cousin, SH Olsen, AG O'Neill, OM Alatise, RMB Agaiby, ... Materials REsearch Society Conference (MRS)	2007
Medium Voltage Direct Current (MVDC) Systems for Rapid Electric Vehicle Charging A Deb, JO Gonzalez, S Jahdi, W Issa, O Alatise