Research Activities

Expertise in Gate Oxide Reliability Analysis

• High Temperature Gate Bias
• Bias Temperature Instability
• Impact of Preconditioning

Related Papers

• J. A. O. González and O. Alatise, "A Novel Non-Intrusive Technique for BTI Characterization in SiC mosfets," in IEEE Transactions on Power Electronics
• J. O. Gonzalez and O. Alatise, "Bias Temperature Instability and Junction Temperature Measurement Using Electrical Parameters in SiC Power MOSFETs," in IEEE Transactions on Industry Applications

• J. Ortiz Gonzalez and O. Alatise, "Impact of BTI-Induced Threshold Voltage Shifts in Shoot-Through Currents From Crosstalk in SiC MOSFETs," in IEEE Transactions on Power Electronics

Expertise in Short Circuit Analysis

• Measurement of Short circuit withstand time in SiC MOSFETs and silicon IGBTs
• Finite element simulations of short circuit performance in Power Semiconductors

Related Papers

• E. Bashar et al., "Comparison of Short Circuit Failure Modes in SiC Planar MOSFETs, SiC Trench MOSFETs and SiC Cascode JFETs," 2021 IEEE 8th Workshop on Wide Bandgap Power Devices and Applications (WiPDA)

• R. Yu et al., "Degradation Analysis of Planar, Symmetrical and Asymmetrical Trench SiC MOSFETs Under Repetitive Short Circuit Impulses," in IEEE Transactions on Power Electronics

• R. Wu, S.N. Agbo, S. Mendy, E. Bashar, S. Jahdi, Ortiz Gonzalez, O. Alatise, Measurement and simulation of short circuit current sharing under parallel connection: SiC MOSFETs and SiC Cascode JFETs, Microelectronics Reliability

Expertise in press-pack design and analysis

• Design and assembly of press-pack prototypes
• Power cycling and reliability assessment

Related Papers

• J. Ortiz Gonzalez et al., "Evaluation of SiC Schottky Diodes Using Pressure Contacts," in IEEE Transactions on Industrial Electronics
• J. Ortiz Gonzalez, A.M. Aliyu, O. Alatise, A. Castellazzi, L. Ran, P. Mawby, Development and characterisation of pressed packaging solutions for high-temperature high-reliability SiC power modules, Microelectronics Reliability

• J. A. O. Gonzalez, O. Alatise, L. Ran, P. Mawby, P. Rajaguru and C. Bailey, "An initial consideration of silicon carbide devices in pressure-packages,"2016 IEEE Energy Conversion Congress and Exposition (ECCE)

Unclamped Inductive Switching Analysis

• Measurement of Avalanche Ruggedness in Power Semiconductor Devices
• Finite Element Simulations of Devices under Avalanche Mode Conduction
• Benchmarking of SiC MOSFETs and Silicon IGBTs

Related Papers

• P. Alexakis, O. Alatise, J. Hu, S. Jahdi, L. Ran and P. A. Mawby, "Improved Electrothermal Ruggedness in SiC MOSFETs Compared With Silicon IGBTs," in IEEE Transactions on Electron Devices,

• J. Hu, O. Alatise, J. A. O. González, R. Bonyadi, L. Ran and P. A. Mawby, "The Effect of Electrothermal Nonuniformities on Parallel Connected SiC Power Devices Under Unclamped and Clamped Inductive Switching," in IEEE Transactions on Power Electronics

• J. Ortiz Gonzalez, A. Deb, E. Bashar, S.N. Agbo, S. Jahdi, O. Alatise, Benchmarking the robustness of Si and SiC MOSFETs: Unclamped inductive switching and short-circuit performance, Microelectronics Reliability

Body Diode Switching Stability

• Analysis of body diode reverse recovery dynamics
• Body diode snappiness evaluation

Related Papers

• S. Jahdi et al., "An Analysis of the Switching Performance and Robustness of Power MOSFETs Body Diodes: A Technology Evaluation," in IEEE Transactions on Power Electronics,

• R. Bonyadi et al., "Compact Electrothermal Reliability Modeling and Experimental Characterization of Bipolar Latchup in SiC and CoolMOS Power MOSFETs," in IEEE Transactions on Power Electronics

• S. Jahdi, O. Alatise, L. Ran and P. Mawby, "Accurate Analytical Modeling for Switching Energy of PiN Diodes Reverse Recovery," in IEEE Transactions on Industrial Electronics,

Gallium Nitride Research

• Bias Temperature Instability in GaN e-HEMTs
• Junction Temperature Sensing in GaN e-HEMTs

Related Papers

• B. Etoz, J. O. Gonzalez, A. Deb, S. Jahdi and O. Alatise, "Impact of threshold voltage shifting on junction temperature sensing in GaN HEMTs," 2022 24th European Conference on Power Electronics and Applications (EPE'22 ECCE Europe), Hanover, Germany, 2022, pp. P.1-P.9.

• J. Ortiz Gonzalez, M. Hedayati, S. Jahdi, B.H. Stark, O. Alatise, Dynamic characterization of SiC and GaN devices with BTI stresses, Microelectronics Reliability,

• J. O. Gonzalez, B. Etoz and O. Alatise, "Characterizing Threshold Voltage Shifts and Recovery in Schottky Gate and Ohmic Gate GaN HEMTs," 2020 IEEE Energy Conversion Congress and Exposition (ECCE), Detroit, MI, USA, 2020, pp. 217-224