• Antoniou, Marina, Udrea, Florin, Lophitis, Neophytos, Corvasce, Chiara, De-Michielis, Luca, 2020. The p-ring Trench Schottky IGBT : a solution towards latch-up immunity and an enhanced safe-operating area. 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD), Vienna, Austria, 13 Sep 2020 - 18 Sep 2020, pp. 134-137
• Donato, Nazareno, Udrea, Florin, Mihaila, Andrei, Knoll, Lara, Romano, Gianpaolo, Kranz, Lukas, Antoniou, Marina, 2020. Single and repetitive surge current events of 3.3 kV-20 A 4H-SiC JBS rectifiers : the impact of the anode layout. 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD), Vienna, Austria, 13-18 Sep 2020, pp. 198-201
• Holke, Alexander, Antoniou, Marina, Udrea, Florin, 2020. Partial SOI as a HV platform technology for Power Integrated Circuits. 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD), Vienna, Austria, 13 Sep - 18 Sep 2020, pp. 435-438
• Tiwari, Amit K., Antoniou, Marina, Trajkovic, Tatjana, Dai, Tian, Gammon, Peter M., Udrea, Florin, 2020. Transient performance of >10kV SiC IGBT with an optimized retrograde p-well. Materials Science Forum, pp. 917-922
• Tiwari, Amit K., Udrea, Florin, Lophitis, Neophytos, Antoniou, Marina, 2019. Operation of ultra-high voltage (>10kV) SiC IGBTs at elevated temperatures : benefits & constraints. 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD), Shanghai, China, 19-23 May 2019, pp. 175-178
• Tiwari, Amit K., Antoniou, Marina, Lophitis, Neo, Perkins, Samuel, Trajkovic, Tatjana, Udrea, Florin, 2019. Performance Improvement of >10kV SiC IGBTs with retrograde p-well. 12th European Conference on Silicon Carbide and Related Materials, Birmingham, United Kingdom, 02-06 Sep 2018, Published in Materials Science Forum, pp. 639-642
• Arvanitopoulos, A., Perkins, S., Gyftakis, K. N., Lophitis, N., Jennings, M. R., Antoniou, M., 2019. Carrier transport mechanisms contributing to the sub-threshold current in 3C-SiC-on-Si Schottky Barrier Diodes. 1st Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia), Xi'an, China, 16-18 May 2018, pp. 169-173
• Tiwari, Amit K., Perkin, S., Lophitis, N., Antoniou, M., Trajkovic, T., Udrea, F., 2019. On the robustness of ultra-high voltage 4H-SiC IGBTs with an optimized retrograde p-well. IEEE 12th International Symposium on Diagnostics for Electrical Machines, Power Electronics and Drives (SDEMPED), Toulouse, France, 27-30 Aug 2019, pp. 351-357
• Perkins, S., Antoniou, M., Tiwari, Amit K., Arvanitopoulos, A., Gyftakis, K. N., Trajkovic, T., Udrea, F., Lophitis, N., 2019. Optimal edge termination for high oxide reliability aiming 10kV SiC n-IGBTs. IEEE 12th International Symposium on Diagnostics for Electrical Machines, Power Electronics and Drives (SDEMPED), Toulouse, France, 27-30 Aug 2019, pp. 358-363
• Arvanitopoulos, A., Antoniou, M., Li, F., Jennings, M. R., Perkins, S., Gyftakis, K. N., Lophitis, N., 2019. Viable 3C-SiC-on-Si MOSFET design disrupting current material technology limitations. IEEE 12th International Symposium on Diagnostics for Electrical Machines, Power Electronics and Drives (SDEMPED), Toulouse, France, 27-30 Aug 2019, pp. 364-370
• Arvanitopoulos, Anastasios, Perkins, Samuel, Antoniou, Marina, Li, Fan, Jennings, Mike, Gyftakis, Konstantinos N., Lophitis, Neophytos, 2018. On the development of the 3C-SiC power law and its applicability for the evaluation of termination structures. The 14th International Seminar on Power Semiconductors (ISPS 2018), Prague, Czech Republic, 29-31 Aug 2018, Published in International Symposium on Power Semiconductors (ISPS)
• Perkins, Samuel, Antoniou, Marina, Tiwari, Amit K., Arvanitopoulos, Anastasios, Trajkovic, T., Udrea, Florin, Lophitis, Neophytos, 2018. >10kV 4H-SiC n-IGBTs for elevated temperature environments. The 14th International Seminar on Power Semiconductors (ISPS 2018), Prague, Czech Republic, 29 Aug 2018 - 31 Aug 2018
• Arvanitopoulos, A., Lophitis, N., Perkins, S., Gyftakis, K. N., Belanche Guadas, M., Antoniou, M., 2017. Physical parameterisation of 3C-Silicon Carbide (SiC) with scope to evaluate the suitability of the material for power diodes as an alternative to 4H-SiC. IEEE 11th International Symposium on Diagnostics for Electrical Machines, Power Electronics and Drives (SDEMPED), Tinos, Greece, 29 Aug - 1 Sep 2017, pp. 565-571
• Lophitis, Neophytos, Antoniou, Marina, Udrea, Florin, Vemulapati, Umamaheswara, Arnold, Martin, Rahimo, Munaf, Vobecky, Jan, 2016. 4.5 kV Bi-mode Gate Commutated Thyristor design with High Power Technology and shallow diode-anode. 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD), Prague, Czech Republic, 12 - 16 Jun 2016, pp. 371-374
• Antoniou, M., Lophitis, N., Udrea, F., Bauer, F., Nistor, I., Bellini, M., Rahimo, M., 2015. Experimental demonstration of the p-ring FS+ Trench IGBT concept : a new design for minimizing the conduction losses. 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD), Hong Kong, China, 10-14 May 2015, pp. 21-24
• Donato, N., Antoniou, M., Napoli, E., Amaratunga, G., Udrea, F., 2015. On the models used for TCAD simulations of Diamond Schottky Barrier Diodes. International Semiconductor Conference (CAS), Sinaia, Romania, 12-14 Oct 2015, pp. 223-226
• Lophitis, N., Antoniou, M., Udrea, F., Nistor, I., Arnold, M., Wikstrom, T., Vobecky, J., Rahimo, M., 2014. The Stripe Fortified GCT : a new GCT design for maximizing the controllable current. 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD), Waikoloa, Hawaii, USA, 15-19 Jun 2014, pp. 123-126
• Antoniou, M., Udrea, F., Tee, E. Kho Ching, Hao, Yang, Pilkington, S., Yaw, Kee Kia, Pal, D. K., Hoelke, A., 2011. Interface charge trapping and hot carrier reliability in high voltage SOI SJ LDMOSFET. pp. 336-339