- Dai, Tianxiang, Zhang, L., Vavasour, Oliver J., Renz, A. B., Shah, V. A., Antoniou, M., Mawby, P. A. (Philip A.), Gammon, P. M., 2021. A compact trench-assisted space-modulated JTE design for high-voltage 4H-SiC devices. IEEE Transactions on Electron Devices
- Arvanitopoulos, Anastasios E., Antoniou, Marina, Jennings, Mike R., Perkins, Samuel, Gyftakis, Konstantinos N., Mawby, Philip. A., Lophitis, Neophytos, 2020. A defects-based model on the barrier height behavior in 3C-SiC-on-Si Schottky barrier diodes. IEEE Journal of Emerging and Selected Topics in Power Electronics, 8 (1), pp. 54-65
- Antoniou, M., Lophitis, N., Udrea, F., Rahimo, M., Vemulapati, U., Corvasce, C., Badstuebner, U., 2019. Deep p-ring trench termination : an innovative and cost-effective way to reduce silicon area. IEEE Electron Device Letters, 40 (2), pp. 177-180
- Tiwari, Amit K., Antoniou, Marina, Lophitis, Neophytos, Perkin, Samuel, Trajkovic, Tatjana, Udrea, Florin, 2019. Retrograde p-well for 10-kV class SiC IGBTs. IEEE Transactions on Electron Devices, 66 (7), pp. 3066-3072
- Arvanitopoulos, Anastasios E., Antoniou, Marina, Perkins, Samuel, Jennings, Mike, Guadas, Manuel Belanche, Gyftakis, Konstantinos N., Lophitis, Neophytos, 2019. On the suitability of 3C-Silicon Carbide as an alternative to 4H-Silicon Carbide for power diodes. IEEE Transactions on Industry Applications, 55 (4), pp. 4080-4090
- Lophitis, N., Antoniou, M., Vemulapati, U., Vobecky, J., Badstuebner, U., Wikstroem, T., Stiasny, T., Rahimo, M., Udrea, F., 2018. Optimal gate commutated thyristor design for bi-mode gate commutated thyristors underpinning high, temperature independent, current controllability. IEEE Electron Device Letters, 39 (9), pp. 1342-1345
- Arvanitopoulos, A, Lophitis, N, Gyftakis, K N, Perkins, S, Antoniou, M., 2017. Validated physical models and parameters of bulk 3C?SiC aiming for credible technology computer aided design (TCAD) simulation. Semiconductor Science and Technology, 32 (10)
- Antoniou, M., Lophitis, Neophytos, Udrea, Florin, Bauer, Friedhelm, Vemulapati, Umamaheswara Reddy, Badstuebner, Uwe, 2017. On the investigation of the "anode side" SuperJunction IGBT design concept. IEEE Electron Device Letters, 38 (8), pp. 1063-1066
- Devane, Eoin, Kasis, Andreas, Antoniou, Marina, Lestas, Ioannis, 2017. Primary frequency regulation with load-side participation?part II : beyond passivity approaches. IEEE Transactions on Power Systems, 32 (5), pp. 3519-3528
- Lophitis, Neophytos, Antoniou, M., Udrea, Florin, Vemulapati, Umamaheswara, Arnold, Martin, Nistor, Iulian, Vobecky, Jan, Rahimo, Munaf, 2015. Improving current controllability in bi-mode gate commutated thyristors. IEEE Transactions on Electron Devices, 62 (7), pp. 2263-2269
- Antoniou, M., Lophitis, N., Bauer, F., Nistor, I., Bellini, M., Rahimo, M., Amaratunga, G., Udrea, F., 2015. Novel approach toward plasma enhancement in trench-insulated gate bipolar transistors. IEEE Electron Device Letters, 36 (8), pp. 823-825
- Kho Ching Tee, Elizabeth, Antoniou, Marina, Udrea, Florin, Hoelke, Alexander, Ng, Liang Yew, Bin Wan Zainal Abidin, Wan Azlan, Pilkington, Steven John, Pal, Deb Kumar, 2014. Analysis on the off-state design and characterization of LIGBTs in partial SOI technology. Solid-State Electronics, 96, pp. 38-43
- Lophitis, Neophytos, Antoniou, Marina, Udrea, Florin, Nistor, Iulian, Arnold, Martin, Wikström, Tobias, Vobecky, Jan, 2014. Parameters influencing the maximum controllable current in gate commutated thyristors. IET Circuits, Devices & Systems, 8 (3), pp. 221-226