Dr Marina Antoniou

Job Title

Associate Professor Reader

Department

School of Engineering

Marina.Antoniou@warwick.ac.uk

Web Link

Link

Research Interests

Analysis, development, modeling of Power Electronics: Development of novel switches/devices for addressing issues of energy efficiency, reliability, sustainability and cost effectiveness of power switches for medium and high voltage applications. Design of Power Microelectronics Circuits. High Frequency power electronics/devices: Wideband gap materials.

Biography

Dr Marina Antoniou is an Associate Professor in the School of Engineering at the University of Warwick. She has been the holder of several highly competitive research fellowships and grants including the Royal Society Research Fellowship 2017 (SiC Power Devices for Smart Grid Systems, £860k) , a Junior Research Fellowship (Selwyn College) and an Early Career EPSRC Centre for Power Electronics award, all of which involved the design and development of power SiC or Si high power devices. Her work has been published as first authored papers in leading IEEE journals and has received awards at major international conferences. She has written five patents and two book chapters. She is a technical committee member for the IEDM, the leading international forum for reporting technological breakthroughs in the areas of semiconductor and electron device technology, design, manufacturing, physics, and modeling and the ISPSD, the leading international conference in the area of power semiconductor devices. She is also a IEEE EDS Power Devices and ICs Committee member. She has previously shadowed the Chief Scientific Advisor for the UK government (Department of Business Energy Innovation Strategy (BEIS)) as a Policy Associate sponsored by the Royal Society. Marina holds a PhD, an MEng and BA from the University of Cambridge (Trinity College).

Almpanis, Ioannis, Antoniou, Marina, Evans, Paul, Empringham, Lee, Gammon, Peter M., Undrea, Florin, Mawby, Philip. A., Lophitis, Neophytos, 2024. Silicon Carbide n-IGBTs : structure optimization for ruggedness enhancement. IEEE Transactions on Industry Applications, pp. 1-13
'Baker, G. W. C., 'Gammon, P. M., 'Renz, A. B., 'Vavasour, O., 'Chan, C. W., 'Qi, Y., 'Dai, T., 'Li, F., 'Zhang, L., 'Kotagama, V., 'Shah, V. A., 'Mawby, P. A. (Philip A.), 'Antoniou, M., 2022. 'Optimization of 1700-V 4H-SiC semi-superjunction Schottky rectifiers with implanted P-pillars for practical realization. IEEE Transactions on Electron Devices, 69 (4), pp. 1924-1930
'Antoniou, Marina, 'Udrea, Florin, 'Kho Ching Tee, Elizabeth, 'H?lke, Alex, 2022. 'High voltage 3-dimesional partial SOI technology platform for power integrated circuits. IEEE Transactions on Electron Devices
Zhang, L., Dai, Tianxiang, Gammon, Peter M., Lophitis, Neophytos, Udrea, Florin, Tiwari, Amit, Gonzalez, Jose Ortiz, Renz, A. B., Shah, Vishal, Mawby, Philip A., Antoniou, Marina, 2022. Investigations of short circuit robustness of SiC IGBTs with considerations on physics properties and design. Materials Science Forum, 1062, pp. 504-508
Renz, A. B., Vavasour, Oliver J., Rommel, Mathias, Baker, G. W. C., Gammon, Peter M., Dai, Tianxiang, Li, Fan, Antoniou, Marina, Mawby, Philip A., Shah, Vishal, 2022. A study of high resistivity semi-insulating 4H-SiC epilayers formed via the implantation of Germanium and Vanadium. Materials Science Forum, 1062, pp. 523-527
Lophitis, Neophytos, Gammon, Peter M., Renz, A. B., Dai, Tianxiang, Tiwari, Amit, Trajkovic, Tatjana, Mawby, Philip A., Udrea, Florin, Antoniou, Marina, 2022. Compact trench floating field rings termination for 10kV+ rated SiC n-IGBTs. Materials Science Forum, 1062, pp. 598-602
Baker, G. W. C., Li, Fan, Dai, Tianxiang, Renz, A. B., Zhang, L., Qi, Yunyi, Shah, Vishal, Mawby, Philip A., Antoniou, Marina, Gammon, Peter M., 2022. A study of 4H-SiC semi-superjunction rectifiers for practical realisation. Materials Science Forum, 1062, pp. 514-518
Baker, G. W. C., Chan, C., Renz, A. B., Qi, Yunyi, Dai, Tianxiang, Li, Fan, Shah, V. A., Mawby, P. A. (Philip A.), Antoniou, Marina, Gammon, P. M., 2021. Optimization of 1700-V 4H-SiC superjunction Schottky rectifiers with implanted p-pillars for practical realization. IEEE Transactions on Electron Devices, 68 (7), pp. 3497-3504
Dai, Tianxiang, Zhang, L., Vavasour, Oliver J., Renz, A. B., Shah, V. A., Antoniou, M., Mawby, P. A. (Philip A.), Gammon, P. M., 2021. A compact trench-assisted space-modulated JTE design for high-voltage 4H-SiC devices. IEEE Transactions on Electron Devices, 68 (3), pp. 1162-1167
Renz, A. B., Vavasour, Oliver J., Gammon, P. M., Li, Fan, Dai, Tianxiang, Antoniou, M., Baker, G. W. C., Bashar, E., Grant, N. E, Murphy, J. D., Mawby, P. A., Shah, V. A., 2021. The improvement of atomic layer deposited SiO2/4H-SiC interfaces via a high temperature forming gas anneal. Materials Science in Semiconductor Processing, 122
Arvanitopoulos, Anastasios E., Antoniou, Marina, Jennings, Mike R., Perkins, Samuel, Gyftakis, Konstantinos N., Mawby, Philip. A., Lophitis, Neophytos, 2020. A defects-based model on the barrier height behavior in 3C-SiC-on-Si Schottky barrier diodes. IEEE Journal of Emerging and Selected Topics in Power Electronics, 8 (1), pp. 54-65
Findlay, E. M., Udrea, F., Antoniou, M., 2019. Investigation of the dual implant reverse-conducting superjunction insulated-gate bipolar transistor. IEEE Electron Device Letters, 40 (6), pp. 862-865
Tiwari, Amit K., Antoniou, Marina, Lophitis, Neophytos, Perkin, Samuel, Trajkovic, Tatjana, Udrea, Florin, 2019. Retrograde p-well for 10-kV class SiC IGBTs. IEEE Transactions on Electron Devices, 66 (7), pp. 3066-3072
Arvanitopoulos, Anastasios E., Antoniou, Marina, Perkins, Samuel, Jennings, Mike, Guadas, Manuel Belanche, Gyftakis, Konstantinos N., Lophitis, Neophytos, 2019. On the suitability of 3C-Silicon Carbide as an alternative to 4H-Silicon Carbide for power diodes. IEEE Transactions on Industry Applications, 55 (4), pp. 4080-4090
Antoniou, M., Lophitis, N., Udrea, F., Rahimo, M., Vemulapati, U., Corvasce, C., Badstuebner, U., 2019. Deep p-ring trench termination : an innovative and cost-effective way to reduce silicon area. IEEE Electron Device Letters, 40 (2), pp. 177-180
Lophitis, N., Antoniou, M., Vemulapati, U., Vobecky, J., Badstuebner, U., Wikstroem, T., Stiasny, T., Rahimo, M., Udrea, F., 2018. Optimal gate commutated thyristor design for bi-mode gate commutated thyristors underpinning high, temperature independent, current controllability. IEEE Electron Device Letters, 39 (9), pp. 1342-1345
Arvanitopoulos, A, Lophitis, N, Gyftakis, K N, Perkins, S, Antoniou, M., 2017. Validated physical models and parameters of bulk 3C?SiC aiming for credible technology computer aided design (TCAD) simulation. Semiconductor Science and Technology, 32 (10)
Devane, Eoin, Kasis, Andreas, Antoniou, Marina, Lestas, Ioannis, 2017. Primary frequency regulation with load-side participation?part II : beyond passivity approaches. IEEE Transactions on Power Systems, 32 (5), pp. 3519-3528
Antoniou, M., Lophitis, Neophytos, Udrea, Florin, Bauer, Friedhelm, Vemulapati, Umamaheswara Reddy, Badstuebner, Uwe, 2017. On the investigation of the "anode side" SuperJunction IGBT design concept. IEEE Electron Device Letters, 38 (8), pp. 1063-1066
Lophitis, Neophytos, Antoniou, M., Udrea, Florin, Vemulapati, Umamaheswara, Arnold, Martin, Nistor, Iulian, Vobecky, Jan, Rahimo, Munaf, 2015. Improving current controllability in bi-mode gate commutated thyristors. IEEE Transactions on Electron Devices, 62 (7), pp. 2263-2269
Antoniou, M., Lophitis, N., Bauer, F., Nistor, I., Bellini, M., Rahimo, M., Amaratunga, G., Udrea, F., 2015. Novel approach toward plasma enhancement in trench-insulated gate bipolar transistors. IEEE Electron Device Letters, 36 (8), pp. 823-825
Lophitis, Neophytos, Antoniou, Marina, Udrea, Florin, Nistor, Iulian, Arnold, Martin, Wikström, Tobias, Vobecky, Jan, 2014. Parameters influencing the maximum controllable current in gate commutated thyristors. IET Circuits, Devices & Systems, 8 (3), pp. 221-226
Kho Ching Tee, Elizabeth, Antoniou, Marina, Udrea, Florin, Hoelke, Alexander, Ng, Liang Yew, Bin Wan Zainal Abidin, Wan Azlan, Pilkington, Steven John, Pal, Deb Kumar, 2014. Analysis on the off-state design and characterization of LIGBTs in partial SOI technology. Solid-State Electronics, 96, pp. 38-43

Lophitis, Neophytos, Arvanitopoulos, Anastasios, Perkins, Samuel, Antoniou, Marina, 2018. TCAD device modelling and simulation of wide bandgap power semiconductors. Disruptive wide bandgap semiconductors, related technologies, and their applications, IntechOpen

Renz, Arne Benjamin, Dai, Tianxiang, Antoniou, Marina, Cao, Qinze, Melnyk, Kyrylo, Tian, Xinkai, Stokeley, Katarzyna, Newton, Andrew, Shah, Vishal, Vavasour, Oliver J., Gammon, P. M., 2023. The optimisation, fabrication and comparison of 10 kV-rated 4H-SiC IGBTs and MOSFETs. 2023 IEEE Energy Conversion Congress and Exposition (ECCE), Nashville, TN, USA, 29 Oct - 02 Nov 2023, Published in 2023 IEEE Energy Conversion Congress and Exposition (ECCE)
Antoniou, Marina, Udrea, Florin, Lophitis, Neophytos, Corvasce, Chiara, De-Michielis, Luca, 2020. The p-ring Trench Schottky IGBT : a solution towards latch-up immunity and an enhanced safe-operating area. 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD), Vienna, Austria, 13 Sep 2020 - 18 Sep 2020, pp. 134-137
Tiwari, Amit K., Antoniou, Marina, Trajkovic, Tatjana, Dai, Tian, Gammon, Peter M., Udrea, Florin, 2020. Transient performance of >10kV SiC IGBT with an optimized retrograde p-well. Materials Science Forum, pp. 917-922
Holke, Alexander, Antoniou, Marina, Udrea, Florin, 2020. Partial SOI as a HV platform technology for Power Integrated Circuits. 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD), Vienna, Austria, 13 Sep - 18 Sep 2020, pp. 435-438
Donato, Nazareno, Udrea, Florin, Mihaila, Andrei, Knoll, Lara, Romano, Gianpaolo, Kranz, Lukas, Antoniou, Marina, 2020. Single and repetitive surge current events of 3.3 kV-20 A 4H-SiC JBS rectifiers : the impact of the anode layout. 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD), Vienna, Austria, 13-18 Sep 2020, pp. 198-201
Tiwari, Amit K., Antoniou, Marina, Lophitis, Neo, Perkins, Samuel, Trajkovic, Tatjana, Udrea, Florin, 2019. Performance Improvement of >10kV SiC IGBTs with retrograde p-well. 12th European Conference on Silicon Carbide and Related Materials, Birmingham, United Kingdom, 02-06 Sep 2018, Published in Materials Science Forum, pp. 639-642
Arvanitopoulos, A., Antoniou, M., Li, F., Jennings, M. R., Perkins, S., Gyftakis, K. N., Lophitis, N., 2019. Viable 3C-SiC-on-Si MOSFET design disrupting current material technology limitations. IEEE 12th International Symposium on Diagnostics for Electrical Machines, Power Electronics and Drives (SDEMPED), Toulouse, France, 27-30 Aug 2019, pp. 364-370
Tiwari, Amit K., Perkin, S., Lophitis, N., Antoniou, M., Trajkovic, T., Udrea, F., 2019. On the robustness of ultra-high voltage 4H-SiC IGBTs with an optimized retrograde p-well. IEEE 12th International Symposium on Diagnostics for Electrical Machines, Power Electronics and Drives (SDEMPED), Toulouse, France, 27-30 Aug 2019, pp. 351-357
Tiwari, Amit K., Udrea, Florin, Lophitis, Neophytos, Antoniou, Marina, 2019. Operation of ultra-high voltage (>10kV) SiC IGBTs at elevated temperatures : benefits & constraints. 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD), Shanghai, China, 19-23 May 2019, pp. 175-178
Arvanitopoulos, A., Perkins, S., Gyftakis, K. N., Lophitis, N., Jennings, M. R., Antoniou, M., 2019. Carrier transport mechanisms contributing to the sub-threshold current in 3C-SiC-on-Si Schottky Barrier Diodes. 1st Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia), Xi'an, China, 16-18 May 2018, pp. 169-173
Perkins, S., Antoniou, M., Tiwari, Amit K., Arvanitopoulos, A., Gyftakis, K. N., Trajkovic, T., Udrea, F., Lophitis, N., 2019. Optimal edge termination for high oxide reliability aiming 10kV SiC n-IGBTs. IEEE 12th International Symposium on Diagnostics for Electrical Machines, Power Electronics and Drives (SDEMPED), Toulouse, France, 27-30 Aug 2019, pp. 358-363
Perkins, Samuel, Antoniou, Marina, Tiwari, Amit K., Arvanitopoulos, Anastasios, Trajkovic, T., Udrea, Florin, Lophitis, Neophytos, 2018. >10kV 4H-SiC n-IGBTs for elevated temperature environments. The 14th International Seminar on Power Semiconductors (ISPS 2018), Prague, Czech Republic, 29 Aug 2018 - 31 Aug 2018
Arvanitopoulos, Anastasios, Perkins, Samuel, Antoniou, Marina, Li, Fan, Jennings, Mike, Gyftakis, Konstantinos N., Lophitis, Neophytos, 2018. On the development of the 3C-SiC power law and its applicability for the evaluation of termination structures. The 14th International Seminar on Power Semiconductors (ISPS 2018), Prague, Czech Republic, 29-31 Aug 2018, Published in International Symposium on Power Semiconductors (ISPS)
Arvanitopoulos, A., Lophitis, N., Perkins, S., Gyftakis, K. N., Belanche Guadas, M., Antoniou, M., 2017. Physical parameterisation of 3C-Silicon Carbide (SiC) with scope to evaluate the suitability of the material for power diodes as an alternative to 4H-SiC. IEEE 11th International Symposium on Diagnostics for Electrical Machines, Power Electronics and Drives (SDEMPED), Tinos, Greece, 29 Aug - 1 Sep 2017, pp. 565-571
Lophitis, Neophytos, Antoniou, Marina, Udrea, Florin, Vemulapati, Umamaheswara, Arnold, Martin, Rahimo, Munaf, Vobecky, Jan, 2016. 4.5 kV Bi-mode Gate Commutated Thyristor design with High Power Technology and shallow diode-anode. 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD), Prague, Czech Republic, 12 - 16 Jun 2016, pp. 371-374
Antoniou, M., Lophitis, N., Udrea, F., Bauer, F., Nistor, I., Bellini, M., Rahimo, M., 2015. Experimental demonstration of the p-ring FS+ Trench IGBT concept : a new design for minimizing the conduction losses. 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD), Hong Kong, China, 10-14 May 2015, pp. 21-24
Donato, N., Antoniou, M., Napoli, E., Amaratunga, G., Udrea, F., 2015. On the models used for TCAD simulations of Diamond Schottky Barrier Diodes. International Semiconductor Conference (CAS), Sinaia, Romania, 12-14 Oct 2015, pp. 223-226
Lophitis, N., Antoniou, M., Udrea, F., Nistor, I., Arnold, M., Wikstrom, T., Vobecky, J., Rahimo, M., 2014. The Stripe Fortified GCT : a new GCT design for maximizing the controllable current. 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD), Waikoloa, Hawaii, USA, 15-19 Jun 2014, pp. 123-126
Antoniou, M., Udrea, F., Tee, E. Kho Ching, Hao, Yang, Pilkington, S., Yaw, Kee Kia, Pal, D. K., Hoelke, A., 2011. Interface charge trapping and hot carrier reliability in high voltage SOI SJ LDMOSFET. pp. 336-339

Title	Funder	Award start	Award end
Semiconductor technology for ICT innovation and knowledge centre (full stage submission of 77392)	EPSRC	01 Apr 2024	31 Mar 2029
UK-Swtizerland Bilateral: Collaborative R&D: Innovations in Power MOSFET Gate technology through the use of ALD oxides	Innovate UK	01 Jul 2024	31 Mar 2027
RS DH Covid Extension (Antoniou) (original record 61843)	Royal Society	01 Apr 2021	31 Mar 2027
Royal Society Dorothy Hodgkin Fellowship Extension- extension to 61818	Royal Society	15 Mar 2024	14 Mar 2027
A New Generation of Power Semiconductor Devices: the SiC SJ IGBT	Royal Society	02 Jan 2019	31 Jan 2026
Silicon Carbide Power Conversion for Telecommunications Satellite Application	EPSRC	01 Apr 2021	31 Mar 2025
2.5kV SiC Power Devices for solar Inverters and HVDC grid applications	Royal Society	01 Nov 2021	31 Oct 2023
A New Generation of Power Semiconductor Devices: the SiC SJ IGBT - RS Enhancement Award	Royal Society	02 Jan 2019	01 Apr 2021