Physics Department News
Experimental Demonstration of Room-Temperature Spin Transport in n-Type Germanium Epilayers
Room-temperature spin transport has now been shown in both pivotal semiconductor materials, Ge and Si, providing new opportunities for the future of semiconductor spintronics.
Spinless composite fermions in an ultrahigh-quality strained Ge quantum well
Discovery of Fractional Quantum Hall Effect in a strained Germanium semiconductor indicates superior quality of epitaxial material and offers the simplest system to research quantum physics.
Self-organised fractional quantisation in a hole quantum wire
The discovery suggests a new area of experimentation in 1D systems, particularly direct measurement of the charge, with implications for possible schemes of topological quantum information processing.
Spin-coherent dynamics and carrier lifetime in strained Ge1−xSnx semiconductors on silicon
The first observation of spin dynamics in the Germanium Tin semiconductor can potentially offer a very rich spin physics, whose fundamental understanding is however still absent.