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Nano-Silicon Group Research Facilities and techniques

Epitaxial Growth techniques and facilities

Materials and devices structural characterisation techniques

  • Cross sectinal and plan view transmission electron microscopy (TEM)
  • Scanning Electron Microscopy (SEM)
  • Atomic Force Microscopy (AFM)
  • Optical microscopy
  • High resolution x-ray diffraction (XRD)
  • X-ray reflectivity
  • Secondary ion mass spectrometry (SIMS)
  • Total Reflection X-ray Fluorescence (TXRF)
  • X-ray photoelectron spectroscopy (XPS)

Materials and devices optical characterisation techniques

  • Fourier-transform infrared spectroscopy (FTIR)
  • Spectroscopic Ellipsometry (SE)
  • Raman spectroscopy
  • Photoluminescence spectroscopy (PL)

Materials and devices electrical and magnetotransport characterisation techniques

  • AC and DC measurements of voltage, current, capacitance and resistance at temperatures in the range of 0.3 - 800 K and magnetic fields up to 12 T
  • Resistivity and Hall effect measurements
  • 4 Point Probe resistivity (4PP)
  • Electrochemical C-V (eC-V)
  • Carrier mobility and carrier density
  • Mobility Spectrum Analysis (MSA) including analysis of carriers scattering mechanisms
  • Input/output device characteristics: threshold voltage, subthreshold slope, transconductance etc
  • Capacitance-Voltage: carrier density, oxide thickness, effective mobility etc
  • Contacts resistance and related parameters
  • Low frequency (1/f) noise
  • High frequency characteristics
  • Quantum phenomena including Quantum Hall Effect, Shubnikov-de Haas oscillations, weak antilocalization etc
  • Thermal conductivity and related parameters

Devices fabrication techniques

All device fabrication equipment is located in ISO3-ISO5 clean rooms

  • Materials surface cleaning with wet chemicals including HF
  • Materials wet etching
  • Thermal growth of SiO2 and GeO2
  • Thermal evaporation of metals
  • Magnetron sputtering of metals and dielectrics
  • Contacts activation
  • Materials and devices annealing in various atmosphere
  • Optical lithography down to ~1 um
  • Dicing and sawing
  • Packaging
  • Wedge and ball bonding of contacts