Nano-Silicon Group Leader, Associate Professor
Dr Maksym Myronov is an expert, with over 15 years of experience, in epitaxial growth, materials characterization and devices technologies of the Group IV (Si, Ge, Diamond, Si1-xGex, Si1-xCx, Ge1-xSnx, Ge1-x-ySnxSiy, 3C-SiC, 4H-SiC, 6H-SiC etc) and III-V (InSb, GaAs, GaN etc) semiconductors. In 2008, he established SiGe Reduced Pressure Chemical Vapour Deposition (RP-CVD) growth capabilities at Warwick. Since then Maksym has been leading and developing them followed by expansion to Si-Ge-C-Sn and SiC epitaxial growth capabilities. Later on he installed the first in the UK Silicon Carbide CVD system which has expanded the Warwick’s epitaxial growth capabilities to 3C-SiC, 4H-SiC and 6H-SiC wide band gap semiconductor materials.
He mainly researches epitaxy of the Group-IV and III-V semiconductors thin films and low-dimensional structures with special interest in creation of novel epitaxial material systems for applications in electronic, photonic, thermoelectric, spintronic, photovoltaic, sensors, MEMS/NEMS, energy storage and quantum devices.
He has actively participated in 3 European, 3 Japanese and over 10 UK EPSRC and STFC funded projects by leading epitaxial growth research activities and developing novel epitaxial structures.
He has published over 350 papers, including over 140 in refereed international scientific journals, 4 book chapters, given over 150 talks at national and international conferences/workshops and filed 7 patents.
Maksym has been collaborating with scientists, researchers and engineers from UK, Europe, USA, Asia and Japan establishing strong links with industrial and academic communities.
Science and technology of materials and solid state devices for applications in electronics, photonics, themoelectrics, photovoltaics, spintronics, cryogenics, sensors, MicroElectroMechanical Systems (MEMS), NanoElectroMechanical systems (NEMS) and quantum technology.
Epitaxy of thin films and novel low-dimensional Group-IV semiconductors structures (Si, Ge, Diamond, Si1-xGex, Si1-xCx, Ge1-xSnx, Ge1-x-ySnxSiy, 3C-SiC, 4H-SiC, 6H-SiC etc) by Molecular Beam Epitaxy (MBE), Atomic Layer Deposition (ALD) and Chemical Vapour Deposition (CVD) techniques.
- Epitaxy of 2D materials (Germanene, Stanene, Silicene, Graphene etc).
- Epitaxy of III-V (InSb, InGaAs, GaN etc) semiconductors and their integration with Si.
- Epitaxy of semiconductors on Sapphire and SOI substrates
- Energy production, harvesting, storage and distribution.
Write To:Department of Physics,
Office: P437 (inside of P432)
Telephone: +44 (0)2476 574383
ORCID - 0000-0001-7757-2187