Semiconductors Research Group Leader, Associate Professor
Maksym Myronov is a scientist, researcher and inventor. He is an expert in epitaxial growth, materials characterisation and device technologies of group IV and III-V semiconductors. He has used to Group IV epitaxy to realise novel nanoscale materials for applications in electronic, photonic, thermoelectric, spintronic, photovoltaic, quantum, energy storage and sensor devices, and research new frontiers in Physics, Engineering and Materials Science.
He has published over 400 papers, including over 150 in refereed international scientific journals, 4 book chapters, given over 150 talks at national and international conferences/workshops and filed around 10 patents.
Maksym has been collaborating with scientists, researchers and engineers from UK, Europe, USA, Asia and Japan establishing strong links with industrial and academic communities.
- In 2008, he established SiGe Reduced Pressure Chemical Vapour Deposition (RP-CVD) growth capabilities at Warwick. Since then Maksym has been leading and developing them followed by expansion to Si-Ge-C-Sn and SiC epitaxial growth capabilities.
- In 2014, he expanded Physics Department clean rooms with additional state of the art ISO3-ISO7 clean rooms.
- In 2015, he installed and commissioned the first in the UK Silicon Carbide (SiC) CVD system, which expanded the Warwick’s epitaxial growth capabilities to 3C-, 4H- and 6H- SiC polytypes wide band gap semiconductor materials.
- In 2019, he installed, commissioned and established the Agile Microfabrication Facilitiy in Physics Department.
Science and technology of materials and solid state devices for applications in electronics, photonics, themoelectrics, photovoltaics, spintronics, cryogenics, sensors, Micro Electro Mechanical Systems (MEMS), Nano Electro Mechanical systems (NEMS), energy storage and quantum technologies.
Epitaxy of thin films and novel low-dimensional Group-IV semiconductors structures (Silicon (Si), Germanium (Ge), Diamond, Silicon Germanium (Si1-xGex), Silicon Carbon (Si1-xCx), Germanium Tin (Ge1-xSnx), Germanium Tin Silicon (Ge1-x-ySnxSiy), 3C-SiC, 4H-SiC, 6H-SiC etc) by Molecular Beam Epitaxy (MBE), Atomic Layer Deposition (ALD) and Chemical Vapour Deposition (CVD) techniques.
- Epitaxy of 2D materials (Germanene, Stanene, Silicene, Graphene etc).
- Epitaxy of III-V (InSb, InGaAs, GaN etc) semiconductors and their integration with Si.
- Epitaxy of semiconductors on Sapphire and SOI substrates
- Energy production, harvesting, storage and distribution.
- Fundamentals of semiconductor devices fabrication (since 2023)
- Introduction to microfabrication (since October 2019)
- Epitaxy fundamentals (since year 2018)
- Epitaxial growth of the group-IV semiconductor materials (since year 2011)Link opens in a new window
- Introduction to solid-state devices (since year 2012)Link opens in a new window
Write To:Department of Physics,
Office: P437 (inside of P432)
Telephone: +44 (0)2476 574383
ORCID - 0000-0001-7757-2187