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Associate Professor Maksym Myronov

PhD, MSc

Semiconductors Research Group Leader, Associate Professor

Maksym Myronov is a scientist, researcher and inventor. He is an expert in epitaxial growth, materials characterisation and device technologies of group IV and III-V semiconductors. He has used to Group IV epitaxy to realise novel nanoscale materials for applications in electronic, photonic, thermoelectric, spintronic, photovoltaic, quantum, energy storage and sensor devices, and research new frontiers in Physics, Engineering and Materials Science.

He has published over 400 papers, including over 150 in refereed international scientific journals, 4 book chapters, given over 150 talks at national and international conferences/workshops and filed around 10 patents.

Maksym has been collaborating with scientists, researchers and engineers from UK, Europe, USA, Asia and Japan establishing strong links with industrial and academic communities.

  • In 2008, he established SiGe Reduced Pressure Chemical Vapour Deposition (RP-CVD) growth capabilities at Warwick. Since then Maksym has been leading and developing them followed by expansion to Si-Ge-C-Sn and SiC epitaxial growth capabilities.
  • In 2014, he expanded Physics Department clean rooms with additional state of the art ISO3-ISO7 clean rooms.
  • In 2015, he installed and commissioned the first in the UK Silicon Carbide (SiC) CVD system, which expanded the Warwick’s epitaxial growth capabilities to 3C-, 4H- and 6H- SiC polytypes wide band gap semiconductor materials.
  • In 2019, he installed, commissioned and established the Agile Microfabrication Facilitiy in Physics Department.

Research interests:

  • Science and technology of materials and solid state devices for applications in electronics, photonics, themoelectrics, photovoltaics, spintronics, cryogenics, sensors, Micro Electro Mechanical Systems (MEMS), Nano Electro Mechanical systems (NEMS), energy storage and quantum technologies.

  • Epitaxy of thin films and novel low-dimensional Group-IV semiconductors structures (Silicon (Si), Germanium (Ge), Diamond, Silicon Germanium (Si1-xGex), Silicon Carbon (Si1-xCx), Germanium Tin (Ge1-xSnx), Germanium Tin Silicon (Ge1-x-ySnxSiy), 3C-SiC, 4H-SiC, 6H-SiC etc) by Molecular Beam Epitaxy (MBE), Atomic Layer Deposition (ALD) and Chemical Vapour Deposition (CVD) techniques.

  • Epitaxy of 2D materials (Germanene, Stanene, Silicene, Graphene etc).
  • Epitaxy of III-V (InSb, InGaAs, GaN etc) semiconductors and their integration with Si.
  • Epitaxy of semiconductors on Sapphire and SOI substrates
  • Energy production, harvesting, storage and distribution.



Write To:

Department of Physics,
The University of Warwick,
Gibbet Hill Road,
CV4 7AL,

Contact Details:

Office: P437 (inside of P432)
Telephone: +44 (0)2476 574383


ORCID - 0000-0001-7757-2187

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Semiconductors Research GroupLink opens in a new window

Chaired conferences:

UK MBE 2015