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Department of Physics

Publications

Journals, Conferences and Books

Publications since year 2008:

Journals:

  1. E. Longo, O. Concepción, R. Mantovan, M. Fanciulli, M. Myronov, E. Bonera, J. Pedrini, D. Buca, and F. Pezzoli. "Spin Pumping in Epitaxial Ge1-xSnx Alloys " Advanced Quantum Technologies 2400508 (2024).Link opens in a new window
  2. B. Jazizadeh and M. Myronov "In–situ strain control in epitaxial silicon carbide compound semiconductor" Scientific Reports Vol. 14 Issue 1, 30325 (2024).Link opens in a new window
  3. M. Myronov, P. Jahandar, S. Rossi, K. Sewell, F. Murphy-Armando and F. Pezzoli "Efficient In Situ Doping of Strained Germanium Tin Epilayers at Unusually Low Temperature" Advanced Electronic Materials 2300811 (2024).
  4. M. Myronov, G. Colston "Single step silicon carbide heteroepitaxy on a silicon wafer at reduced temperature" Materials Today Communications 38 108312 (2024)Link opens in a new window.
  5. M. Myronov, P. Waldron, P. Barrios, A. Bogan and S. Studenikin “Electric field-tuneable crossing of hole Zeeman splitting and orbital gaps in compressive strained germanium semiconductor on silicon” Communications Materials 4 104 (2023).
  6. S. Ayinde and M. Myronov “Revealing low thermal conductivity of germanium tin semiconductor at room-temperature” Advanced Materials Interfaces 2300711 (2023).
  7. M. Gaifullin, S. Lee, J.F. Kelleher, S. Kabra, M. Myronov, B.E. Evans and O. Kirichek "Influence of mechanical stress on electron transport properties of second-generation high-temperature superconducting tapes." Low Temperature Physics, 49 (8). pp. 994-997 (2023).
  8. N. Petkov, M. Georgieva, S. Bugu, R. Duffy, B. McCarthy, M. Myronov, et al. "Electron beam lithography and dimensional metrology for fin and nanowire devices on Ge, SiGe and GeOI substrates" Microelectronic Engineering Pages 112071 (2023).
  9. M. Myronov, J. Kycia, P. Waldron, W. Jiang, P. Barrios, A. Bogan, P. Coleridge and S. Studenikin "Holes Outperform Electrons in Group IV Semiconductor Materials" Small Science 2200094 (2023).
  10. Y. Gul, S. N. Holmes, C. W. Cho, B. Piot, M. Myronov and M. Pepper "Two-dimensional localization in GeSn" Journal of Physics-Condensed Matter 34 48 485301 (2022).
  11. M. Myronov, G. Colston, J. Davies and L. Michael "A fast approach to measuring the thickness uniformity of a homoepilayer grown on to any type of silicon wafer" Semiconductor Science and Technology  37 065003 (2022)Link opens in a new window.

  12. G. Colston, O. Newell, S. D. Rhead, V. S. A. Shah and M. Myronov "Strain mapping of silicon carbon suspended membranes." Materials & Design 211 110135 (2021).Link opens in a new window

  13. E. Rogowicz, J. Kopaczek, J. Kutrowska-Girzycka, M. Myronov, R. Kudrawiec and M. Syperek "Carrier Dynamics in Thin Germanium–Tin Epilayers." ACS Applied Electronic Materials 3(1): 344-352 (2021).
  14. Giordano Scappucci, Christoph Kloeffel, Floris Zwanenburg, Daniel Loss, Maksym Myronov, Jian-Jun Zhang, Silvano De Franceschi, Georgios Katsaros, and Menno Veldhorst "The germanium quantum information route" Nature Reviews Materials 6, 926–943 (2021).
  15. E. Vitiello, S. Rossi, C. A. Broderick, G. Gravina, A. Balocchi, X. Marie, E. P. O’Reilly, M. Myronov and F. Pezzoli "Continuous-Wave Magneto-Optical Determination of the Carrier Lifetime in Coherent Ge1-xSnx/Ge Heterostructures." Physical Review Applied 14(6): 064068 (2020)Link opens in a new window.
  16. Y. Gul, M. Myronov, S.N. Holmes and M. Pepper, "Activated and Metallic Conduction in p-Type Modulation-Doped Ge-Sn Devices" Physical Review Applied 14, 054064 (2020).
  17. L.Q. Zhou, G. Colston, M. Myronov, D. R. Leadley, O. Trushkevych, V. Shah and R. S. Edwards "Ultrasonic Inspection and Self-Healing of Ge and 3C-SiC Semiconductor Membranes." Journal of Microelectromechanical Systems 29(3): 370-377 (2020).
  18. J. Keller, J., G. Scalari, F. Appugliese, S. Rajabali, M. Beck, J. Haase, C. A. Lehner, W. Wegscheider, M. Failla, M. Myronov, D. R. Leadley, J. Lloyd-Hughes, P. Nataf and J. Faist (2020). "Landau polaritons in highly nonparabolic two-dimensional gases in the ultrastrong coupling regime." Physical Review B 101(7): 7 (2020).
  19. A. Mukanova, A. Serikkazyyeva, A. Nurpeissova, S. S. Kim, M. Myronov and Z. Bakenov "Understanding the effect of p-, n-type dopants and vinyl carbonate electrolyte additive on electrochemical performance of Si thin film anodes for lithium-ion battery." Electrochimica Acta 330 (2020).
  20. Y.A. Bioud, A. Boucherif, M. Myronov, A. Soltani, G. Patriarche, N. Braidy, M. Jellite, D. Drouin and R. Arès "Uprooting defects to enable high-performance III–V optoelectronic devices on silicon." Nature Communications 10(1): 4322 (2019).
  21. J.D. Murphy, A. I. Pointon, N. E. Grant, V. A. Shah, M. Myronov, V. V. Voronkov and R. J. Falster "Minority carrier lifetime in indium doped silicon for photovoltaics." Progress in Photovoltaics: 12, 1-12 (2019).
  22. S. De Cesari, A. Balocchi, E. Vitiello, P. Jahandar, E. Grilli, T. Amand, X. Marie, M. Myronov and F. Pezzoli "Spin-coherent dynamics and carrier lifetime in strained GeSn semiconductors on silicon." Physical Review B 99(3): 035202 (2019).
  23. R. Mizokuchi, R. Maurand, F. Vigneau, M. Myronov and S. De Franceschi "Ballistic One-Dimensional Holes with Strong g-Factor Anisotropy in Germanium." Nano Letters 18(8): 4861-4865 (2018).

  24. G. Colston and M. Myronov "Electrical properties of n-type 3C-SiC epilayers in situ doped with extremely high levels of phosphorus." Semiconductor Science and Technology 33(11) 114007 (2018).

  25. C.J. Clausen, I. A. Fischer, D. Weisshaupt, F. Baerwolf, B. Tillack, G. Colston, M. Myronov, M. Oehme and J. Schulze "Electrical characterization of n-doped SiGeSn diodes with high Sn content." Semiconductor Science and Technology 33(12) 124017 (2018).

  26. A. Mukanova, A. Nurpeissova, A. Zharbossyn, S.-S. Kim, M. Myronov and Z. Bakenov "N-type doped amorphous Si thin film on a surface of rough current collector as anode for Li-ion batteries." Materials Today: Proceedings 5(11, Part 1): 22759-22763 (2018).

  27. S. Bechler, M. Kern, H. S. Funk, G. Colston, I. A. Fischer, D. Weisshaupt, M. Myronov, J. van Slageren and J. Schulze "Formation of Mn5Ge3 by thermal annealing of evaporated Mn on doped Ge on Si(111)." Semiconductor Science and Technology 33(9): 9 095008 (2018).

  28. A. Mukanova, A. Zharbossyn, A. Nurpeissova, S. S. Kim, M. Myronov and Z. Bakenov "Electrochemical Study of Graphene Coated Nickel Foam as an Anode for Lithium-Ion Battery." Eurasian Chemico-Technological Journal 20(2): 91-97 (2018).

  29. Y. Gul, S. N. Holmes, M. Myronov, S. Kumar and M. Pepper "Self-organised fractional quantisation in a hole quantum wire." Journal of Physics: Condensed Matter 30(9): 09LT01 (2018).

  30. P. Jahandar, D. Weisshaupt, G. Colston, P. Allred, J. Schulze and M. Myronov "The effect of Ge precursor on the heteroepitaxy of Ge1-xSnx epilayers on a Si (001) substrate." Semiconductor Science and Technology 33(3) 034003 (2018).

  31. V. Sivadasan, S. Rhead, D. Leadley and M. Myronov "Kirkendall void formation in reverse step graded Si1-xGex/Ge/Si(001) virtual substrates." Semiconductor Science and Technology 33(2) 024002 (2018).

  32. A. Mukanova, A. Nurpeissova, S.-S. Kim, M. Myronov and Z. Bakenov "N-Type Doped Silicon Thin Film on a Porous Cu Current Collector as the Negative Electrode for Li-Ion Batteries." ChemistryOpen 7(1): 92-96 (2018).

  33. C. Morrison and M. Myronov "Electronic transport anisotropy of 2D carriers in biaxial compressive strained germanium." Applied Physics Letters 111(19): 192103 (2017).

  34. Y. Gul, S. N. Holmes, P. J. Newton, D. J. P. Ellis, C. Morrison, M. Pepper, C. H. W. Barnes and M. Myronov "Quantum ballistic transport in strained epitaxial germanium." Applied Physics Letters 111(23): 233512 (2017).

  35. A. Mukanova, A. Nurpeissova, A. Urazbayev, S. S. Kim, M. Myronov and Z. Bakenov "Silicon thin film on graphene coated nickel foam as an anode for Li-ion batteries." Electrochimica Acta 258: 800-806 (2017).

  36. D.J. Norris, M. Myronov, D. R. Leadley and T. Walther "Comparison of cross-sectional transmission electron microscope studies of thin germanium epilayers grown on differently oriented silicon wafers." Journal of Microscopy 268(3): 288-297 (2017).

  37. R.W. Millar, D. C. S. Dumas, K. F. Gallacher, P. Jahandar, C. MacGregor, M. Myronov and D. J. Paul "Mid-infrared light emission >3µm wavelength from tensile strained GeSn microdisks." Optics Express 25(21): 25374-25385 (2017).
  38. G. Colston and M. Myronov "Controlling the optical properties of monocrystalline 3C-SiC heteroepitaxially grown on silicon at low temperatures." Semiconductor Science and Technology 32(11): 6 114005 (2017).
  39. V. Kaganer, T. Ulyanenkova, A. Benediktovitch, M. Myronov and A. Ulyanenkov (2017). "Bunches of misfit dislocations on the onset of relaxation of Si0.4Ge0.6/Si(001) epitaxial films revealed by high-resolution x-ray diffraction." Journal of Applied Physics 122(10): 105302 (2017).
  40. R. Mizokuchi, P. Torresani, R. Maurand, Z. Zeng, Y. M. Niquet, M. Myronov and S. De Franceschi "Hole weak anti-localization in a strained-Ge surface quantum well." Applied Physics Letters 111(6) 063102 (2017).

  41. L. Q. Zhou, G. Colston, M. J. Pearce, R. G. Prince, M. Myronov, D. R. Leadley, O. Trushkevych and R. S. Edwards "Non-linear vibrational response of Ge and SiC membranes." Applied Physics Letters 111(1) 011904 (2017).

  42. C.S. Knox, C. Morrison, F. Herling, D. A. Ritchie, O. Newell, M. Myronov, E. H. Linfield and C. H. Marrows "Partial hybridisation of electron-hole states in an InAs/GaSb double quantum well heterostructure." Semiconductor Science and Technology 32(10): 104002 (2017).

  43. F. Herling, C. Morrison, C. S. Knox, S. Zhang, O. Newell, M. Myronov, E. H. Linfield and C. H. Marrows "Spin-orbit interaction in InAs/GaSb heterostructures quantified by weak antilocalization." Physical Review B 95(15): 155307 (2017)
  44. P.J. Newton, R. Mansell, S. N. Holmes, M. Myronov and C. H. W. Barnes "Weak localization and weak antilocalization in doped germanium epilayers." Applied Physics Letters 110(6): 062101 (2017).
  45. L. Woodend, P.M Gammon, V. Shah, A. Pérez-Tomás, F. Li, D. P. Hamilton, M. Myronov and P.A. Mawby “Cryogenic characterisation and modelling of commercial SiC MOSFETs.” Materials Science Forum, 897 . pp. 557-560 (2017).
  46. M. Failla, J. Keller, G. Scalari, C. Maissen, J. Faist, C. Reichl, W. Wegscheider, O. J. Newell, D. R. Leadley, M. Myronov and J. Lloyd-Hughes "Terahertz quantum Hall effect for spin-split heavy-hole gases in strained Ge quantum wells." New Journal of Physics 18(11): 113036 (2016).

  47. C. Morrison and M. Myronov "Strained germanium for applications in spintronics." Physica status solidi (a) 213(11): 2809-2819 (2016). Feature Article

  48. F. Pezzoli, A. Giorgioni, D. Patchett and M. Myronov "Temperature-Dependent Photoluminescence Characteristics of GeSn Epitaxial Layers." ACS Photonics 3(11): 2004-2009 (2016).
  49. C. Morrison, C. Casteleiro, D. R. Leadley and M. Myronov "Complex quantum transport in a modulation doped strained Ge quantum well heterostructure with a high mobility 2D hole gas." Applied Physics Letters 109(10): 102103 (2016).

  50. S.N. Holmes, P. J. Newton, J. Llandro, R. Mansell, C. H. W. Barnes, C. Morrison and M. Myronov "Spin-splitting in p-type Ge devices." Journal of Applied Physics 120(8): 085702 (2016).

  51. G. Colston, S. D. Rhead, V. A. Shah, O. J. Newell, I. P. Dolbnya, D. R. Leadley and M. Myronov "Mapping the strain and tilt of a suspended 3C-SiC membrane through micro X-ray diffraction." Materials & Design 103: 244-248 (2016).
  52. C. Morrison, J. Foronda, P. Wiśniewski, S. D. Rhead, D. R. Leadley and M. Myronov "Evidence of strong spin–orbit interaction in strained epitaxial germanium." Thin Solid Films 602: 84-89 (2016).
  53. T.L.R. Brien, P. A. R. Ade, P. S. Barry, C. J. Dunscombe, D. R. Leadley, D. V. Morozov, M. Myronov, E. H. C. Parker, M. J. Prest, M. Prunnila, R. V. Sudiwala, T. E. Whall and P. D. Mauskopf "Optical Response of Strained- and Unstrained-Silicon Cold-Electron Bolometers." Journal of Low Temperature Physics: 184, 1, 231-237 (2016).
  54. D. Gunnarsson, J. S. Richardson-Bullock, M. J. Prest, H. Q. Nguyen, A. V. Timofeev, V. A. Shah, T. E. Whall, E. H. C. Parker, D. R. Leadley, M. Myronov and M. Prunnila "Interfacial Engineering of Semiconductor–Superconductor Junctions for High Performance Micro-Coolers." Scientific Reports 5: 17398, (2015).
  55. G. Colston, M. Myronov, S. Rhead and D. Leadley "Analysis of surface defects in Si 1− y C y epilayers formed by the oversaturation of carbon." Semiconductor Science and Technology 30(11): 114003, (2015).
  56. J.E. Halpin, S.D. Rhead, A.M. Sanchez, M. Myronov and D.R. Leadley "Growth of complex SiGe/Ge superlattices by reduced pressure chemical vapour deposition at low temperature." Semiconductor Science and Technology 30(11): 114009, (2015).
  57. Q. Shi, M. A. Zudov, C. Morrison and M. Myronov "Transport anisotropy in Ge quantum wells in the absence of quantum oscillations." Physical Review B 92(16): 161405, (2015).
  58. F. Li, Y. Sharma, V. Shah, M. Jennings, A. Perez-Tomas, M. Myronov, C. Fisher, D. Leadley and P. Mawby "Electrical activation of nitrogen heavily implanted 3C-SiC(100)." Applied Surface Science 353: 958-963, 2015.
  59. M. Failla, M. Myronov, C. Morrison, D. R. Leadley and J. Lloyd-Hughes "Narrow heavy-hole cyclotron resonances split by the cubic Rashba spin-orbit interaction in strained germanium quantum wells." Physical Review B 92(4): 045303, (2015).
  60. P.J. Newton, J. Llandro, R. Mansell, S. N. Holmes, C. Morrison, J. Foronda, M. Myronov, D. R. Leadley and C. H. W. Barnes "Magnetotransport in p-type Ge quantum well narrow wire arrays." Applied Physics Letters 106(17): 172102, 2015.
  61. Q. Shi, M. A. Zudov, C. Morrison and M. Myronov "Spinless composite fermions in an ultrahigh-quality strained Ge quantum well." Physical Review B Rapid Communications 91(24): 241303(R), 2015.
  62. S. Dushenko, M. Koike, Y. Ando, T. Shinjo, M. Myronov and M. Shiraishi "Experimental Demonstration of Room-Temperature Spin Transport in n-Type Germanium Epilayers." Physical Review Letters 114(19): 196602, 2015.
  63. Q. Shi, M. A. Zudov, C. Morrison and M. Myronov "Strong transport anisotropy in Ge/SiGe quantum wells in tilted magnetic fields." Physical Review B Rapid Communications 91(20): 201301(R), 2015.
  64. M. Myronov, C. Morrison, J. Halpin, S. Rhead, J. Foronda and D. Leadley "Revealing high room and low temperatures mobilities of 2D holes in a strained Ge quantum well heterostructures grown on a standard Si(001) substrate." Solid-State Electronics 110(0): 35-39, 2015.
  65. A. Benediktovitch, A. Zhylik, T. Ulyanenkova, M. Myronov and A. Ulyanenkov "Characterization of dislocations in germanium layers grown on (011)- and (111)-oriented silicon by coplanar and noncoplanar X-ray diffraction" Journal of Applied Crystallography 48(3): 655-665, 2015.
  66. T. Ulyanenkova, M. Myronov and A. Ulyanenkov (2015). "Boron doped cubic silicon probed by high resolution X-ray diffraction." Physica Status Solidi (c) 12(3), 255–258, 2015.
  67. V.A. Shah, S. D. Rhead, J. Finch, M. Myronov, J. S. Reparaz, R. J. Morris, N. R. Wilson, V. Kachkanov, I. P. Dolbnya, J. E. Halpin, D. Patchett, P. Allred, G. Colston, K. J. S. Sawhney, C. M. S. Torres and D. R. Leadley "Electrical properties and strain distribution of Ge suspended structures." Solid-State Electronics 108: 13-18, 2015.
  68. J.S. Richardson-Bullock, M. J. Prest, V. A. Shah, D. Gunnarsson, M. Prunnila, A. Dobbie, M. Myronov, R. J. H. Morris, T. E. Whall, E. H. C. Parker and D. R. Leadley "Comparison of electron-phonon and hole-phonon energy loss rates in silicon." Solid-State Electronics 103: 40-43, 2015.
  69. C. Morrison, P. Wiśniewski, S. D. Rhead, J. Foronda, D. R. Leadley and M. Myronov "Observation of Rashba zero-field spin splitting in a strained germanium 2D hole gas." Applied Physics Letters 105(18): 182401, 2014.
  70. J. Foronda, C. Morrison, J. E. Halpin, S. D. Rhead and M. Myronov "Weak antilocalization of high mobility holes in a strained Germanium quantum well heterostructure." Journal of Physics-Condensed Matter 27 (2) 022201, 2014.
  71. D.C.S. Dumas, K. Gallacher, S. Rhead, M. Myronov, D. R. Leadley and D. J. Paul "Ge/SiGe quantum confined Stark effect electro-absorption modulation with low voltage swing at λ = 1550 nm." Optics Express 22(16): 19284-19292, 2014.
  72. T.L.R. Brien, P. A. R. Ade, P. S. Barry, C. Dunscombe, D. R. Leadley, D. V. Morozov, M. Myronov, E. H. C. Parker, M. J. Prest, M. Prunnila, R. V. Sudiwala, T. E. Whall and P. D. Mauskopf "A strained silicon cold electron bolometer using Schottky contacts." Applied Physics Letters 105(4), 043509, 2014.
  73. V.A. Shah, M. Myronov, S. D. Rhead, J. E. Halpin, A. Shchepetov, M. J. Prest, M. Prunnila, T. E. Whall, E. H. C. Parker and D. R. Leadley "Flat single crystal Ge membranes for sensors and opto-electronic integrated circuitry." Solid-State Electronics 98: 93-98, 2014.
  74. O. Trushkevych, V.A. Shah, M. Myronov, J.E. Halpin, S.D. Rhead, M.J. Prest, D.R. Leadley and R.S. Edwards "Laser-vibrometric ultrasonic characterization of resonant modes and quality factors of Ge membranes." Science and Technology of Advanced Materials 15(2): 025004, 2014.
  75. V.A. Shah, S.D. Rhead, J.E. Halpin, O. Trushkevych, E. Chávez-Ángel, A. Shchepetov, V. Kachkanov, N.R. Wilson, M. Myronov, J.S. Reparaz, R.S. Edwards, M.R. Wagner, F. Alzina, I.P. Dolbnya, D.H. Patchett, P.S. Allred, M.J. Prest, P.M. Gammon, M. Prunnila, T.E. Whall, E.H.C. Parker, C.M. Sotomayor Torres and D.R. Leadley "High quality single crystal Ge nano-membranes for opto-electronic integrated circuitry." Journal of Applied Physics 115(14): 144307, 2014.
  76. M. Myronov, C. Morrison, J. Halpin, S. Rhead, C. Casteleiro, J. Foronda, V. A. Shah and D. Leadley "An extremely high room temperature mobility of two-dimensional holes in a strained Ge quantum well heterostructure grown by reduced pressure chemical vapor deposition." Japanese Journal of Applied Physics 53(4S): 04EH02, 2014.
  77. C. Wongwanitwattana, V. A. Shah, M. Myronov, E. H. C. Parker, T. Whall and D. R. Leadley "Precision plasma etching of Si, Ge, and Ge:P by SF6 with added O2." Journal of Vacuum Science & Technology A 32(3): 031302, 2014.
  78. A.H. Hassan, R. J. H. Morris, O. A. Mironov, R. Beanland, D. Walker, S. Huband, A. Dobbie, M. Myronov and D. R. Leadley "Anisotropy in the hole mobility measured along the [110] and [1¯10] orientations in a strained Ge quantum well." Applied Physics Letters 104(13): 132108, 2014.
  79. D.J. Norris, Y. Qiu, A. Dobbie, M. Myronov and T. Walther "Similarity of Stranski-Krastanow growth of Ge/Si and SiGe/Si (001)." Journal of Applied Physics 115 (1) 012003, 2014.
  80. P.M. Gammon, A. Perez-Tomas, V. A. Shah, O. Vavasour, E. Donchev, J. S. Pang, M. Myronov, C. A. Fisher, M. R. Jennings, D. R. Leadley and P. A. Mawby "Modelling the inhomogeneous SiC Schottky interface." Journal of Applied Physics 114(22), 223704 2014.
  81. O.A. Mironov, A.H.A. Hassan, R.J.H. Morris, A. Dobbie, M. Uhlarz, D. Chrastina, J.P. Hague, S. Kiatgamolchai, R. Beanland, S. Gabani, I.B. Berkutov, M. Helm, O. Drachenko, M. Myronov and D. R. Leadley (2014). "Ultra high hole mobilities in a pure strained Ge quantum well." Thin Solid Films 557(0): 329-333, 2014.
  82. C.W. Burrows, C. W., A. Dobbie, M. Myronov, T. P. A. Hase, S. B. Wilkins, M. Walker, J. J. Mudd, I. Maskery, M. R. Lees, C. F. McConville, D. R. Leadley and G. R. Bell "Heteroepitaxial Growth of Ferromagnetic MnSb(0001) Films on Ge/Si(111) Virtual Substrates." Crystal Growth & Design 13(11): 4923-4929, 2013.
  83. V. Huy Nguyen, A. Dobbie, M. Myronov and D. R. Leadley "High quality relaxed germanium layers grown on (110) and (111) silicon substrates with reduced stacking fault formation." Journal of Applied Physics 114(15): -154306, 2013.
  84. R.E. Warburton, G. Intermite, M. Myronov, P. Allred, D. R. Leadley, K. Gallacher, D. J. Paul, N. J. Pilgrim, L. J. M. Lever, Z. Ikonic, R. W. Kelsall, E. Huante-Ceron, A. P. Knights and G. S. Buller "Ge-on-Si Single-Photon Avalanche Diode Detectors: Design, Modeling, Fabrication, and Characterization at Wavelengths 1310 and 1550nm." IEEE Transactions on Electron Devices PP(99): 1-1, (2013).
  85. T. Ulyanenkova, M. Myronov, A. Benediktovitch, A. Mikhalychev, J. Halpin and A. Ulyanenkov "Characterization of SiGe thin films using a laboratory X-ray instrument." Journal of Applied Crystallography 46: 898-902, (2013).
  86. S. Wirths, A. T. Tiedemann, Z. Ikonic, P. Harrison, B. Hollander, T. Stoica, G. Mussler, M. Myronov, J. M. Hartmann, D. Grutzmacher, D. Buca and S. Mantl "Band engineering and growth of tensile strained Ge/(Si)GeSn heterostructures for tunnel field effect transistors." Applied Physics Letters 102(19): 192103, 2013.
  87. B. Xu, C. Li, M. Myronov and K. Fobelets "n-Si-p-Si1-xGex nanowire arrays for thermoelectric power generation." Solid-State Electronics 83: 107-112, 2013.
  88. V.A. Shah, M. Myronov, A. Dobbie and D. R. Leadley "Introduction of Terraces into a Reverse Linearly Graded SiGe Buffer on Si(001) Substrate and Their Effect on the Buffer's Structural Properties." ECS Journal of Solid State Science and Technology 2(3): Q40-Q44, 2013.
  89. T. Walther, D. J. Norris, Y. Qiu, A. Dobbie, M. Myronov and D. R. Leadley "The Stranski–Krastanow transition in SiGe epitaxy investigated by scanning transmission electron microscopy." Physica status solidi (a) 210(1): 187-190, 2013.
  90. T. Ulyanenkova, M. Myronov, A. Benediktovitch, A. Mikhalychev, J. Halpin and A. Ulyanenkov "Characterization of SiGe thin films using a laboratory X-ray instrument." Journal of Applied Crystallography 46: 898-902, 2013.
  91. R.J.H. Morris, M. G. Dowsett, R. Beanland, A. Dobbie, M. Myronov and D. R. Leadley "O-2(+) probe-sample conditions for ultra low energy SIMS depth profiling of nanometre scale Si0.4Ge0.6/Ge quantum wells." Surface and Interface Analysis 45(1): 348-351, 2013.
  92. B. Xu, C. Li, K. Thielemans, M. Myronov and K. Fobelets "Thermoelectric Performance of Si0.8Ge0.2 Nanowire Arrays." Ieee Transactions on Electron Devices 59(12): 3193-3198, 2012.
  93. N. Van Huy, A. Dobbie, M. Myronov, D. J. Norris, T. Walther and D. R. Leadley "Epitaxial growth of relaxed germanium layers by reduced pressure chemical vapour deposition on (110) and (111) silicon substrates." Thin Solid Films 520(8): 3222-3226, 2012.
  94. V.A. Shah, M. Myronov, C. Wongwanitwatana, L. Bawden, M. J. Prest, J. S. Richardson-Bullock, S. Rhead, E. H. C. Parker, T. E. Whall and D. R. Leadley "Electrical isolation of dislocations in Ge layers on Si(001) substrates through CMOS-compatible suspended structures." Science and Technology of Advanced Materials 13(5), 2012.
  95. V.A. Shah, A. Dobbie, M. Myronov and D. R. Leadley "Reverse graded strain relaxed SiGe buffers for CMOS and optoelectronic integration." Thin Solid Films 520(8): 3227-3231, 2012.
  96. R.J.H. Morris, M. G. Dowsett, R. Beanland, A. Dobbie, M. Myronov and D. R. Leadley "Overcoming Low Ge Ionization and Erosion Rate Variation for Quantitative Ultralow Energy Secondary Ion Mass Spectrometry Depth Profiles of Si1-xGex/Ge Quantum Well Structures." Analytical Chemistry 84(5): 2292-2298, 2012.
  97. P. Velha, D.J. Paul, M. Myronov and D.R. Leadley, "Long Wavelength >1.9 μm Germanium for Optoelectronics Using Process Induced Strain" Electrochemical Society Transactions 50(9), pp.779-782, 2012.
  98. K. Gallacher, P. Velha, D.J. Paul, I. MacLaren, M. Myronov and D.R. Leadley, "Low Specific Ohmic Contacts to n-type Germanium Using a Low Temperature NiGe Process" Electrochemical Society Transactions 50(9), pp.1081-1084, 2012.
  99. P. Velha, K. Gallacher, D. Dumas, D.J. Paul, M. Myronov and D.R. Leadley "Direct Band-Gap Electroluminescence from Strained n-Ge Light Emitting Diodes" Electrochemical Society Transactions 50(9), pp.305-308, 2012.
  100. L. Lever, Z. Ikonic, A. Valavanis, R. W. Kelsall, M. Myronov, D. R. Leadley, Y. Hu, N. Owens, F. Y. Gardes and G. T. Reed "Optical absorption in highly strained Ge/SiGe quantum wells: The role of Gamma ->Delta scattering." Journal of Applied Physics 112(12), 2012.
  101. K. Gallacher, P. Velha, D. J. Paul, I. MacLaren, M. Myronov and D. R. Leadley "Ohmic contacts to n-type germanium with low specific contact resistivity." Applied Physics Letters 100(2), 2012.
  102. A. Dobbie, N. Van Huy, M. Myronov, T. E. Whall, E. H. C. Parker and D. R. Leadley "Growth of Smooth, Low-Defect Germanium Layers on (111) Silicon via an Intermediate Islanding Process." Applied Physics Express 5(7), 2012.
  103. A. Dobbie, N. Van Huy, R. J. H. Morris, X.-C. Liu, M. Myronov and D. R. Leadley "Thermal Stability of Thin Compressively Strained Ge Surface Channels Grown on Relaxed Si0.2Ge0.8 Reverse-Graded Buffers." Journal of the Electrochemical Society 159(5): H490-H496, 2012.
  104. A. Dobbie, M. Myronov, R. J. H. Morris, A. H. A. Hassan, M. J. Prest, V. A. Shah, E. H. C. Parker, T. E. Whall and D. R. Leadley "Ultra-high hole mobility exceeding one million in a strained germanium quantum well." Applied Physics Letters 101(17), 2012.
  105. L. Lever, Y. Hu, M. Myronov, X. Liu, N. Owens, F. Y. Gardes, I. P. Marko, S. J. Sweeney, Z. Ikonic, D. R. Leadley, G. T. Reed and R. W. Kelsall "Modulation of the absorption coefficient at 1.3 um in Ge/SiGe multiple quantum well heterostructures on silicon." Optics Letters 36(21): 4158-4160 (2011).
  106. A. Zhylik, F. Rinaldi, M. Myronov, K. Saito, S. Menzel, A. Dobbie, D. R. Leadley, T. Ulyanenkova, I. D. Feranchuk and A. Ulyanenkov "High-resolution reciprocal space mapping of distributed Bragg reflectors and virtual substrates." Physica Status Solidi a-Applications and Materials Science 208(11): 2582-2586, 2011.
  107. E. Simoen, J. Mitard, B. De Jaeger, G. Eneman, A. Dobbie, M. Myronov, D.R. Leadley, M. Meuris, T. Hoffmann and C. Claeys “Low-frequency noise characterization of strained germanium pMOSFETs” IEEE Transactions on Electron Devices 58 (9), 3132-3139, 2011.
  108. Y. Kawamura, M. Uematsu, Y. Hoshi, K. Sawano, M. Myronov, Y. Shiraki, E. E. Haller and K. M. Itoh “Self-diffusion in compressively strained Ge” Journal of Applied Physics 110 (3), 034906, 2011.
  109. A. Zhylik, A. Benediktovich, A. Ulyanenkov, H. Guerault, M. Myronov, A. Dobbie, D. R. Leadley and T. Ulyanenkova. "High-resolution x-ray diffraction investigation of relaxation and dislocations in SiGe layers grown on (001), (011), and (111) Si substrates." Journal of Applied Physics 109 (12), 123714, 2011.
  110. V.A. Shah, A. Dobbie, M. Myronov and D. R. Leadley "High quality relaxed Ge layers grown directly on a Si(001) substrate." Solid-State Electronics 62 (1), 189-194, 2011.
  111. J.T. Muhonen, J. T., M. J. Prest, M. Prunnila, D. Gunnarsson, V. A. Shah, A. Dobbie, M. Myronov, R. J. H. Morris, T. E. Whall, E. H. C. Parker and D. R. Leadley "Strain dependence of electron-phonon energy loss rate in many-valley semiconductors." Applied Physics Letters 98 (18), 182103, 2011.
  112. J. Mitard, B. De Jaeger, G. Eneman, A. Dobbie, M. Myronov, M. Kobayashi, J. Geypen, H. Bender, B. Vincent, R. Krom, J. Franco, G. Winderickx, E. Vrancken, W. Vanherle, W.-E. Wang, J. Tseng, R. Loo, K. De Meyer, M. Caymax, L. Pantisano, D. R. Leadley, M. Meuris, P. P. Absil, S. Biesemans and T. Hoffmann "High Hole Mobility in 65 nm Strained Ge p-Channel Field Effect Transistors with HfO(2) Gate Dielectric." Japanese Journal of Applied Physics 50 (4), 04DC17, 2011.
  113. Liu, X.-C., R. J. H. Morris, M. Myronov, A. Dobbie and D. R. Leadley "Silicon-germanium interdiffusion in strained Ge/SiGe multiple quantum well structures." Journal of Physics D-Applied Physics 44 (7) 079501, (2011).
  114. Xue-Chao Liu, M. Myronov, A. Dobbie, R.J.H. Morris and D.R. Leadley “High-quality Ge/Si0.4Ge0.6 multiple quantum wells grown by reduced pressure chemical vapour deposition for photonic applications: growth by reduced pressure chemical vapour deposition and structural characteristics” Journal of Physics D: Applied Physics 44 (5), 055102, 2011.
  115. M. Myronov, Xue-Chao Liu A. Dobbie and D.R. Leadley “Control of Epilayer thickness during epitaxial growth of high Ge content strained Ge/SiGe multilayers by RP-CVD” submitted to Journal of Crystal Growth 318 (1), 337-340, 2011.
  116. E. Simoen, J. Mitard, B. De Jaeger, G. Eneman, A. Dobbie, M. Myronov, D.R. Leadley, M. Meuris, T. Hoffmann and C. Claeys “Defect-related excess low-frequency noise in Ge-on-Si pMOSFETs” submitted to Electron Device Letter 32 (1), 87-89, 2011.
  117. Xue-Chao Liu, M. Myronov, A. Dobbie, Van H. Nguyen, and D. R. Leadley “Accuracy of thickness measurement for Ge epilayer grown on SiGe/Ge/Si(100) heterostructure by X-ray diffraction and reflectivity” Journal of Vacuum Science and Technology B 29 (1), 011010, 2011.
  118. Xue-Chao Liu, M. Myronov, A. Dobbie, Van H. Nguyen, and D. R. Leadley “Non-destructive thickness characterization of Si based heterostructure by X-ray diffraction and reflectivity” Solid State Electronics 60 (1), 42-45, 2011.
  119. M. Myronov, V.A. Shah, A. Dobbie, Xue-Chao Liu, Van H. Nguyen, D.R. Leadley and E.H.C. Parker “Highly strained Si epilayers grown on SiGe/Si(100) virtual substrate by Reduced Pressure Chemical Vapour Deposition” Physics Status Solidi 8 (3), 925-955, 2011.
  120. M. Myronov, A. Dobbie, V. Shah, Van H. Nguyen, Xue-Chao Liu, and D. R. Leadley “High quality strained Ge epilayers on a Si0.2Ge0.8/Ge/Si(100) global strain-tuning platform grown by reduced pressure chemical vapour deposition” Electrochemical and Solid-State Letters 13 (11) pp.H388-H390, 2010.
  121. A. Dobbie, M. Myronov, Xue-Chao Liu, Van H. Nguyen, E.H.C. Parker and D.R. Leadley “Effect of Growth Rate on the Threading Dislocation Density in Relaxed SiGe Buffers Grown by Reduced Pressure Chemical Vapor Deposition at High Temperature” Semiconductor Science and Technology 25 (8) 085007, 2010.
  122. V.A. Shah, A. Dobbie, M. Myronov, D.R. Leadley “Reverse graded SiGe/Ge/Si buffers for high-composition virtual substrates” Journal of Applied Physics 107 (6) 064304, 2010.
  123. M. Myronov, D. R. Leadley and Y. Shiraki “High mobility holes in a strained Ge quantum well grown on a thin and relaxed Si0.4Ge0.6/LT-Si0.4Ge0.6/Si(001) virtual substrate” Applied Physics Letters 94, 092108, 2009.
  124. V.A. Shah, A. Dobbie, M. Myronov, D.J.F. Fulgoni, L.J. Nash, D.R. Leadley “Reverse graded relaxed buffers for high Ge content SiGe virtual substrates” Applied Physics Letters 93, 192103, 2008.
  125. I.L. Drichko, A. M. Dyakonov, I. Y. Smirnov, A. V. Suslov, Y. M. Galperin, V. Vinokur, M. Myronov and O. A. Mironov "Low-temperature conductance mechanisms in p-Si/SiGe heterostructures in high magnetic fields" Physica Status Solidi C - Current Topics in Solid State Physics 5 (3) 829-834, 2008.
  126. I.B. Berkutov, V. V. Andrievskii, Y. F. Komnik, D. R. Leadley, M. Myronov, H. von Kanel and O. A. Mironov (2008). "A new method of investigating the quantum channel surface." Journal of Physics-Condensed Matter 20 (22), 2008.
  127. M. Myronov, K. Sawano, Y. Shiraki, K.M. Itoh “Observation of pronounced effect of compressive strain on room-temperature transport properties of two-dimensional hole gas in a Ge quantum well” Applied Physics Express 1, 051402, 2008.
  128. I.L. Drichko, A.M. Dyakonov, I.Y. Smirnov, A.V. Suslov, Y.M. Galperin, V. Vinokur, M. Myronov, O.A. Mironov and D.R. Leadley "Magnetotransport in low-density p-Si/SiGe heterostructures: From metal through hopping insulator to Wigner glass." Physical Review B 77 (8), 085327, 2008.
  129. M. Myronov, K. Sawano, Y. Shiraki, K.M. Itoh “Room-temperature transport properties of high drift mobility two-dimensional electron gas confined in a strained Si quantum well” Applied Physics Express 1, 021402, 2008.
  130. M. Myronov, K. Sawano, Y. Shiraki, T. Mouri, K.M. Itoh “Observation of high mobility 2DHG with very high hole density in the modulation doped strained Ge quantum well at room-temperature” Physica E: Low-dimensional systems and nanostructures 40 (6) pp.1935-1937 2008.

Conferences:

  1. M. Myronov “Emergence of the highest mobility holes in a 2D system epitaxially grown on a silicon wafer” E-MRS 2023 FALL, 18-21 September 2023, Warsaw, Poland. (Invited talk)
  2. M. Myronov “Breakthrough in enhancement of hole mobility in strained germanium semiconductor leads to emergence of new class of quantum materials” INESS-2023-mESC-IS, , 17-21 July 2023, Akyaka, Turkey. (Invited talk)
  3. M. Myronov, Jan Kycia, Philip Waldron, Pedro Barrios, Sergei Studenikin “Hole mobility in strained germanium exceeds 4×106 cm2V-1s-1”, ICSI-ISTDM 2023 21-25 May 2023, Como, Italy. (Talk)
  4. M. Myronov "Epitaxy of Silicon Carbide for Power Devices" ECS PRiME 2020 international conference, USA, 4-9 October 2020, Virtual. (Invited)
  5. M. Myronov "Quantum transport of high mobility 2DHG in a strained GeSn quantum well " 2020 IEEE Photonics Society Summer Topical Meeting Series, 13-15 July 2020, USA, Virtual. (Invited)
  6. M. Myronov “Appearance of 2D holes in strained epitaxial Germanium Tin semiconductor” Cool Electrons in Flatlands, Catania, Italy, 15-24 June 2020, Virtual. (Invited)
  7. G.Colston, S. Wirths and M. Myronov “Low temperature homoepitaxy of 4H-SiC epilayers on off-axis and on-axis substrates with high levels of electrically active dopants” ICSCRM 2019, Kyoto, Japan, 29 September – 4 October 2019. (Oral)
  8. M. Myronov “Appearance of high mobility 2D holes in strained epitaxial Germanium” 18th conference Gettering and Defect Engineering in Semiconductor Technology (Gadest 2019), Zeuthen, Germany, 22-27 September 2019. (Invited)
  9. M. Myronov “Unlocking new devices applications with novel wafer scale Silicon Carbide heteroepitaxy” 7th International conference on Nanomaterials and Advanced Energy Storage Systems (INESS 2019), Nursultan, Kazakhstan, 7-9 August 2019. (Invited)
  10. Y. Gul, M. Myronov, S. Holmes M. Pepper “Quantum technologies using strained Ge quantum well epitaxial material” ICSI-ISTDM 2019 conference, Madison, USA, 2-6 June 2019. (Oral)
  11. M. Myronov and G. Colston “A Cubic SiC Temperature Sensor for Harsh Environment Applications” ICSI-ISTDM 2019 conference, Madison, USA, 2-6 June 2019. (Oral)
  12. S. De Cesari, A. Balocchi, E. Vitiello, P. Jahandar, T. Aman, X. Marie, M. Myronov, F. Pezzoli “Carrier and Spin Coherent Dynamics in Strained Germanium-Tin Semiconductor on Silicon” ICSI-ISTDM 2019 conference, Madison, USA, 2-6 June 2019. (Oral)
  13. M. Myronov “Ballistic hole transport and self-organised fractional quantisation in a strained Germanium quantum wire” Quantum transport in 2D systems – III Session Workshop VI (W6), Luchon, France, May 25 - June 1, 2019. (Invited)
  14. M. Myronov “Overcoming limitations of Silicon Carbide heteroepitaxy on Silicon wafers” MIPRO 2019 conference, Opatija, Croatia, 20-24 May 2019. (Invited)
  15. M. Myronov “Wafer scale SiC on Si strain tuning platform for integration of 2D and compound semiconductor materials” UK MBE workshop 2019, Sheffield, UK 11-12 April 2019. (Invited)

  16. M. Myronov “Appearance of high mobility carriers in strained epitaxial Germanium” Americas International Meeting on Electrochemistry and Solid State Science (AiMES) 2018, Cancun, Mexico, 30th - September 4th October 2018. (Invited)

  17. G. Colston and M. Myronov “Achieving extremely high levels of electrically active doping in silicon carbide epitaxy” 50th International Conference on Solid State Devices and Materials 2018 (SSDM 2018), Tokyo, Japan, 9-13th September 2018. (Oral)

  18. M. Myronov “X-ray diffraction from advanced epitaxial group-IV semiconductor structures” 14th Biennial Conference on High Resolution X-ray Diffraction and Imaging (XTOP 2018), Bari, Italy, 3-7th September 2018, (Invited)

  19. M. Myronov “In situ doping of silicon carbide semiconductor via epitaxy” 6thInternational Conference on Nanomaterials and Advanced Energy Storage Systems (INESS-2018), Astana, Kazakhstan, 8-10th August 2018. (Invited)

  20. F. Pezzoli, S. de Cesari, A. Balocchi, E. Vitiello, P. Jahandar, E. Grilli, T. Amand, X. Marie, M. Myronov “Carrier and Spin Coherent Dynamics in Strained Germanium-Tin Semiconductor on Silicon” 34th International Conference on the Physics of Semiconductors (ICPS 2018), Montpellier, France, 29th July – 3rd August 2018. (Oral)

  21. M. Myronov, D.R. Leadley, J. Lloyd-Hughes, P. Nataf, J. Faist “Critical mode softening in THz ultra-strong coupling with sGe QWs beyond the Hopfield model” 34th International Conference on the Physics of Semiconductors (ICPS 2018), Montpellier, France, 29th July – 3rd August 2018. (Poster)
  22. M. Myronov “Epitaxy of advanced group IV alloys for nanodevices” E-MRS Spring 2018, Strasbourg, France, 17-22nd June 2018. (Invited)
  23. G. Colston and M. Myronov “Very high levels of electrically active n-type doping in 3C-SiC epilayers grown on a standard Silicon (001) substrate”, Joint ISTDM/ICSI 2018 conference, Potsdam, Germany, 27-31st May 2018. (Oral)
  24. Y. Gul, S. N. Holmes, M. Myronov, S. Kumar, M. Pepper “Self-organised fractional quantisation of 1D holes in strained epitaxial Ge” Joint ISTDM/ICSI 2018 conference, Potsdam, Germany, 27-31st May 2018. (Oral)
  25. Y.A. Bioud, A. Boucherif, M. Myronov, A. Soltani, G. Patriarche, N. Braidy, D. Drouin and R. Arès “High-quality Ge/Si virtual substrates fabricated by a low cost and scalable process” Joint ISTDM/ICSI 2018 conference, Potsdam, Germany, 27-31st May 2018. (Oral)
  26. J. Cregeen, G. Colston and M. Myronov “High quality SiO2 growth at temperatures below 1000 °C on epitaxial 3C-SiC on a Si (001) substrate” Joint ISTDM/ICSI 2018 conference, Potsdam, Germany, 27-31st May 2018. (Poster)
  27. M. Myronov “Germanium Tin heterosystem: new opportunities for spintronics, photonics and electronics” XXII Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, Russia,12-15th March 2018 .(Invited)
  28. L.Q. Zhou, G. Colston, O. Trushkevych, M. Myronov, D.R. Leadley and R.S. Edwards “Quality-factor and frequency shifts of suspended Ge membranes” 2017 International Congress on Ultrasonics, Honolulu, Hawaii, USA, 18-20 December 2017. (Oral).
  29. M. Myronov “High mobility Ge channels on Si: Fabrication and Applications” E-MRS Fall 2017, Warsaw, Poland, 18-21st September 2017. (Invited).
  30. R.W. Millar, D.C.S. Dumas, K. Gallacher, P. Jahandar, M. Myronov and D. J. Paul “Tensile strained GeSn mid-infrared light emitters” 2017 IEEE 14th International Conference on Group IV Photonics, Berlin, Germany, 23-25 August 2017. (Oral)
  31. M. Myronov “Overcoming limitations of Silicon Carbide heteroepitaxy on Silicon wafers” 5th International Conference on Nanomaterials and Advanced Energy Storage Systems (INESS-2017), Astana, Kazakhstan, 9–11 August 2017. (Invited).
  32. M. Myronov and G. Colston “Integration of Silicon Carbide on Silicon for its application in ultraviolet photodetectors” 2017 Ieee Photonics Society Summer Topical Meeting Series, San Juan, Puerto Rico, 10-12 July 2017. (Invited)
  33. F. Pezzoli, S. De Cesari, E. Vitiello and M. Myronov “Spin-optoelectronic functionalities of group IV materials” 2017 Ieee Photonics Society Summer Topical Meeting Series, San Juan, Puerto Rico, 10-12 July 2017. (Invited)
  34. D. Weisshaupt, P. Jahandar, G. Colston, P. Allred, J. Schulze and M. Myronov “Impact of Sn segregation on GeSn epi-layers growth by RP-CVD” 2017 40th International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO) Opatija, Croatia, 22-26 May 2017. (Oral)
  35. A. Mukanova, G. Colston, D. Batyrbekuly, A. Molkenova, A. Nurpeissova, M. Myronov, Z. Bakenov “3C-SiC thin film as negative electrode for Li-ion batteries”, E-MRS Spring 2017, Strasbourg, France, 22- 26th May 2017. (Poster presentation)
  36. Peter Newton, Rhodri Mansell, Stuart Holmes, Maksym Myronov and Crispin Barnes ”Weak Localization and Weak Antilocalization in Doped Germanium Epilayers” The 10th International Conference on Silicon Epitaxy and heterostructures (ICSI-10), Coventry, UK, 14-19th May 2017. (Oral presentation)
  37. Fabio Pezzoli, Sebastiano De Cesari, Andrea Balocchi, Elisa Vitiello, David Patchett, E. Grilli, X. Marie and Maksym Myronov “Radiative recombination and optical spin orientation in GeSn epitaxial layers” The 10th International Conference on Silicon Epitaxy and heterostructures (ICSI-10), Coventry, UK, 14-19th May 2017. (Oral presentation)
  38. R.W. Millar, D.C.S. Dumas, K. Gallacher, D. Patchett, M. Myronov and D.J. Paul “Tensile strained GeSn on Si substrates emitting in the mid-infrared”The 10th International Conference on Silicon Epitaxy and heterostructures (ICSI-10), Coventry, UK, 14-19th May 2017 (Oral presentation)
  39. Maksym Myronov and Gerard Colston “Overcoming limitations of Silicon Carbide heteroepitaxy on Silicon Wafers” The 10th International Conference on Silicon Epitaxy and heterostructures (ICSI-10), Coventry, UK, 14-19th May 2017 (Oral presentation)
  40. Y. Gul, S. N. Holmes, P. J. Newton, D. J. P. Ellis, C. Morrison, M. Myronov, M. Pepper and C. H. W. Barnes “Quantised conductance in 1-dimensional p-type Ge” The 10th International Conference on Silicon Epitaxy and heterostructures (ICSI-10), Coventry, UK, 14-19th May 2017 (Oral presentation)
  41. J. Foronda, C. Morrison and M. Myronov “Weak Anti-Localisation in a High Mobility Ge 2D-Hole-Gas Originating from the k-Cubic Rashba Spin-Orbit Interaction” The 10th International Conference on Silicon Epitaxy and heterostructures (ICSI-10), Coventry, UK, 14-19th May 2017 (Oral presentation)
  42. Vineet Sivadasan, Stephen Rhead, David Leadley and Maksym Myronov “Kirkendall void formation in reverse step graded SiGe/Ge/Si(001) virtual substrates” The 10th International Conference on Silicon Epitaxy and heterostructures (ICSI-10), Coventry, UK, 14-19th May 2017 (Oral presentation)
  43. Oliver Newell, Christopher Morrison, Chirojyoti Rava, Steffen Wiedmann, Uli Zeitler, Maksym Myronov “Composite fermions observed in strained epitaxial germanium” The 10th International Conference on Silicon Epitaxy and heterostructures (ICSI-10), Coventry, UK, 14-19th May 2017 (Oral presentation)
  44. Maksym Myronov and Chris Morrison “2D holes mobility anisotropy in strained epitaxial Germanium” The 10th International Conference on Silicon Epitaxy and heterostructures (ICSI-10), Coventry, UK, 14-19th May 2017 (Oral presentation)
  45. M. Failla, J. Keller, G. Scalari, C. Maissen, J. Faist, C. Reichl, W. Wegscheider, O. J. Newell, D. R. Leadley, C. Morrison, M. Myronov and J. Lloyd Hughes “Terahertz time-domain magneto-spectroscopy of spin-split heavy-hole gases in strained Ge quantum wells: the Rashba and optical quantum Hall effects” The 10th International Conference on Silicon Epitaxy and heterostructures (ICSI-10), Coventry, UK, 14-19th May 2017 (Oral presentation)
  46. Phil Allred and Maksym Myronov “Ultra-High Boron Doping in Silicon Epliayers Grown using RP-CVD” The 10th International Conference on Silicon Epitaxy and heterostructures (ICSI-10), Coventry, UK, 14-19th May 2017 (Poster presentation)
  47. Pedram Jahandar, David Weisshaupt, Gerard Colston, Phil Allred, Jorg Schulze, Maksym Myronov “Effect of Ge precursor on heteroepitaxy of Ge1-xSnx on Si substrate” The 10th International Conference on Silicon Epitaxy and heterostructures (ICSI-10), Coventry, UK, 14-19th May 2017 (Poster presentation)
  48. Gerard Colston and Maksym Myronov “Effect of Thickness on the Optical Properties of monocrystalline 3C-SiC Epilayers grown on Silicon” The 10th International Conference on Silicon Epitaxy and heterostructures (ICSI-10), Coventry, UK, 14-19th May 2017 (Poster presentation)
  49. Oliver J. Newell, David Leadley and Maksym Myronov “Growth of germanium dioxide exhibiting a very low density of interface traps on a strained germanium quantum well” The 10th International Conference on Silicon Epitaxy and heterostructures (ICSI-10), Coventry, UK, 14-19th May 2017 (Poster presentation)
  50. L.Q. Zhou, G. Colston, M.J. Pearce, R.G. Prince, O. Trushkevych, M. Myronov, D.R. Leadley and R.S. Edwards “Measurement of stress in semiconductor crystalline membranes using ultrasonic techniques” The 10th International Conference on Silicon Epitaxy and heterostructures (ICSI-10), Coventry, UK, 14-19th May 2017 (Poster presentation)
  51. A. Mukanova, M. Myronov, G. Colston, D. Batyrbekuly, A. Moldabayeva, A. Molkenova, Zh. Bakenov, “Silicon carbide thin film as negative electrode for lithium ion batteries”, The 20th Topical Meeting of the International Society of Electrochemistry, Buenos Aires, Argentina, 19-22th March 2017. (Oral presentation)
  52. A. Nurpeissova, A. Molkenova, A. Mukanova, Golsten, Z. Bakenov, M. Myronov “SiC thin film anode for LIB” The 57th Battery Symposium, Chiba, Japan, 29 November - 1 December 2016. (Oral presentation)
  53. M. Prunnila, D. Gunnarsson, A. Timofeev, M. J. Prest, T. E. Whall, E. H. C. Parker, M. Myronov and D. R. Leadley “High Performance Semiconductor-Superconductor Junction Coolers” ASC 2016, San Diego 2016.
  54. L.J. Woodend, P.M. Gammon, V.A. Shah, A. Pérez-Tomás, F. Li, D.A. Hamilton, M. Myronov and P.A. Mawby “Cryogenic Characterisation and Modelling of Commercial SiC MOSFETs” 11th European Conference on Silicon Carbide and Related Materials (ECSCRM 2016), Halkidiki, Greece, 25-29 September 2016. (Poster presentation)
  55. A. Molkenova, S. Otepov, A. Moldabayeva, A. Zheksembekova, M. Myronov, G. Colston, Z. Bakenov “Development of novel Si-based thin film anode materials for Li-ion batteries” The 4th International Conference on Nanomaterials and Advanced Energy Storage, Almaty, Kazakhstan, 10-12th August 2016. (Poster presentation)
  56. Y. Gul, P. J. Newton, S. N. Holmes, C. Morrison, M. Myronov, M. Pepper, C. H. W. Barnes “Conductance quantization in one-dimensional p-type Ge” 33rd International Conference on the Physics of Semiconductors, Beijing, China, 31 July – 5 August 2016. (Oral presentation)
  57. M. Myronov and G. Colston “Low-temperature heteroepitaxy of very high crystalline quality 3C-SiC on standard Si wafer” UK Semiconductors 2016 conference, Sheffield, UK, 6-7 July (Oral presentation)
  58. O.J. Newell, C. Morrison, C. Rava, S. Wiedmann, U. Zeitler, M. Myronov “Fractional Quantum Hall Effect in high mobility compressive strained Ge Quantum Wells” UK Semiconductors 2016 conference, Sheffield, UK, 6-7 July (Oral presentation) 
  59. Y. Gul, P. J. Newton, S. N. Holmes, C. Morrison, M. Myronov, M. Pepper, C. H. W. Barnes “Conductance quantization in one-dimensional p-type Ge”UK Semiconductors 2016 conference, Sheffield, UK, 6-7 July (Poster presentation)
  60. A. Benediktovitch, A. Mikhalychev, T. Ulyanenkova, M. Myronov, V.M. Kaganer, A. Ulyanenkov “X-ray diffraction analysis of misfit dislocations if SiGe/Si thin layers: the role of finite thickness on dislocation induced peak shape” 15th European Powder Diffraction Conference (EPDIC15), Bari, Italy, 12-15 June 2016. (Oral presentation) 
  61. M. Myronov “Quantum phenomena in epitaxial strained Germanium“International SiGe Technology and Device Meeting (ISTDM 2016), Nagoya, Japan, 7-11 June 2016. (Invited talk)
  62. M. Myronov “Germanium spintronics“ E-MRS 2016 spring meeting, Lille, France, 2-6 May 2016 (Invited talk)
  63. M. Myronov and G. Colston “Wafer scale heteroepitaxy of very high crystalline quality 3C-SiC on a standard Si substrate” E-MRS 2016 spring meeting, Lille, France, 2-6 May 2016. (Oralpresentation)
  64. F. Pezzoli, A. Giorgioniand M. Myronov “Radiative recombination in GeSn epitaxial architectures” E-MRS 2016 spring meeting, Lille, France, 2-6 May 2016. (Oral presentation)
  65. J.D. Murphy, A.I. Pointon, V.A. Shah, C. Morrison, M. Myronov, R.J. Falster “Minority carrier lifetime in indium doped silicon for photovoltaics” E-MRS 2016 spring meeting, Lille, France, 2-6 May 2016. (Oral presentation).
  66. C. Morrison, J. Foronda and M. Myronov “The Rashba spin-orbit interaction in germanium quantum wells” Magnetism 2016 conference, Sheffield, UK, 4-5 April 2016. (Oral presentation)
  67. A. Czett, Cs. Buday, F. Korsoos, M. Myronov, M. Wilson, S. Savtchouk “Dopant profiling by C-V and Q-V methods extended to the lightly doped samples” Gettering and Defect Engineering in Semiconductor Technology 2015, Bad Staffelstein, Germany, 20-25 September 2015. (Poster presentation)
  68. M. Myronov, G. Colston, S. D. Rhead “Low temperature epitaxy of crystalline 3C‐SiC on standard Si substrates” International Conference on Silicon Carbide and Related Materials 2015 (ICSCRM 2015), Giardini Naxos, Italy, 4-9 October 2015. (Poster presentation)
  69. G. Colston, S. D. Rhead, V. ShahO. Newell, K. Sawhney, I. Dolbnya, I. Pape, D. R. Leadley, M. Myronov“Mapping the strain state and tilt of 3C-SiC/Si(001) suspended structures using μ-XRD” International Conference on Silicon Carbide and Related Materials 2015 (ICSCRM 2015), Giardini Naxos, Italy, 4-9 October 2015. (Poster presentation) 
  70. G. Colston, S. D. Rhead, V. ShahO. Newell, K. Sawhney, I. Dolbnya, I. Pape, D. R. Leadley, M. Myronov “Mapping the Residual Strain and Tilt in a Suspended 3C-SiC membrane by the use of Synchrotron based X-ray Diffraction” 7th Size-Strain conference 'Diffraction Analysis of the Microstructure of Materials' (SS-VII), Oxford, Uk 21-24 September 2015. (Oral presentation)
  71. C. Morrison, D. R. Leadley and M. Myronov “Anisotropic low temperature quantum magnetotransport of an ultra-high mobility 2D hole gas in a strained Ge quantum well” 21st International Conference on Electronic Properties of Two-Dimensional Systems, Sendai, Japan, 26-31 July 2015. (Poster presentation)
  72. M. Myronov, C. Morrison and D. R. Leadley “Surface Orientation Dependant Anisotropy of a High Mobility 2DHG in a Strained Germanium Quantum Well” 17th International Conference on Modulated Semiconductor Structures, Sendai, Japan, 26-31 July 2015.  (Oral presentation)
  73. M. Myronov “Quantum phenomena of 2D hole gas in compressive strained epitaxial Germanium” Quantum transport in 2D systems Workshop, Luchon, France, 23-30 May 2015. (Invited talk) 
  74. M. Myronov, C. Morrison, J. Foronda and D. Leadley “Evidence of strong spin-orbit interaction in strained epitaxial Germanium” The 9th International Conference on Silicon Epitaxy and Heterostructures (ICSI-9), Montreal, Quebec, Canada, 17-25 May 2015. (Oral presentation)
  75. M. Myronov, D. Patchett, S. Rhead, D. Leadley “Thermally driven strain relaxation and diffusion of highly strained GeSn epilayers grown on a standard Si(001) substrate” ” E-MRS 2015 spring meeting, Lille, France, 11-15 May 2015. (Oral presentation)
  76. M. Failla, M. Myronov, C. Morrison, D. Leadley and J. Lloyd-Hughes “Terahertz time-domain cyclotron spectroscopy of the cubic Rashba spin orbit interaction in strained germanium quantum wells with high mobility heavy holes” Optical Terahertz Science & Technology Conference (OTST 2015), San Diego, CA, USA, 8-13 March 2015. (Poster presentation
  77. V. Sivadasan, M. Myronov, S. Rhead, J. Halpin, D. Leadley “Reverse terrace graded virtual substrates grown using RP-CVD on on-axis and 6° off-axis substrates for future developments in III-V materials integration” 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, Bologna, Italy, 26-28 January 2015. (Oral presentation)
  78. S. Dushenko, M. Koike, Y. Ando, M. Myronov, and M. Shiraishi“Demonstration of spin transport in n-type Germanium epilayers at room temperature.” 59th Annual Magnetism and Magnetic Materials Conference, Honolulu, Hawaii, USA, 3-7 November 2014. (Oral presentation)
  79. M. Myronov “High mobility strained Ge quantum well heterostructures” ASM Users meeting, Munich, Germany, 25th September 2014. (Invited talk)
  80. Gerard COLSTON, Maksym MYRONOV, Stephen RHEAD, Vishal SHAH, Yogesh SHARMA, Philip MAWBY, David LEADLEY “Si1-xCx/Si(001) Heterostructures for use in Schottky Diode Rectifiers Demonstrating High Breakdown Voltage and Negligible Leakage Current “ 10th European Conference on Silicon Carbide and Related Materials (ECSCRM 2014) Grenoble, France, 21-25 September, 2014. (Oral presentation)
  81. Chunwa CHAN, Peter GAMMON, Vishal SHAH, Chen HAN, Mike JENNINGS, Craig FISHER, Amador PÉREZ, Maksym MYRONOV, Philip MAWBY “Simulations of a lateral PiN diode on Si/SiC substrate for high temperature applications“ 10th European Conference on Silicon Carbide and Related Materials (ECSCRM 2014) Grenoble, France, 21-25 September, 2014. (Poster presentation)
  82. Han CHEN, Peter GAMMON, Vishal SHAH, Craig FISHER, Chunwa CHAN, Saeed JAHDI, Dean HAMILTON, Mike JENNINGS, Maksym MYRONOV, David LEADLEY, Phil MAWBY “Characterisation of commercial SiC power devices at cryogenic temperatures “ 10th European Conference on Silicon Carbide and Related Materials (ECSCRM 2014) Grenoble, France, 21-25 September, 2014. (Poster presentation 
  83. A. Benediktovich, A. Zhylik, T. Ulyanenkova, M. Myronov and A. Ulyanenkov “Characterization of dislocations in germanium layers grown on (011) and (111) oriented silicon by coplanar and non-coplanar x-ray diffraction” 12th Conference on High-Resolution X-ray Diffraction and Imaging (XTOP2014) Villard de Lans, France, 14-19 September 2014. (Oral presentation)
  84. D.C.S. Dumas, K. Gallacher, M. Myronov, S. Rhead, D.R. Leadley Douglas J. Paul “Ge/SiGe Quantum Confined Stark Effect Modulators with Low Voltage Swing at λ = 1550 nm” 2014 IEEE 11th International Conference on Group IV Photonics, Paris, France, 27-29 August 2014. (Oral presentation)
  85. C. Morrison, M. Myronov, P. Wi’sniewski, S. Rhead, D. Leadley “Zero-Field Spin Splitting in a High Mobility Ge 2D Hole Gas” 32nd International Conference on the physics of semiconductors, Austin, USA, 10-15 August 2014. (Oral presentation) 
  86. C. Morrison, M. Myronov, J. Foronda, S. Rhead, D. Leadley “Transport Properties of intentionally Undoped Ge Quantum Well Heterostructures” 32nd International Conference on the physics of semiconductors, Austin, USA, 10-15 August 2014. (Poster presentation)
  87. M. Myronov, C. Morrison. J. Halpin, S. Rhead, D. Leadley “Revealing Groundbreaking Room Temperature 2DHG Mobility in a Strained Germanium Quantum Well” 32nd International Conference on the physics of semiconductors, Austin, USA, 10-15 August 2014. (Oral presentation)
  88. M. Failla, C. Morrison, M. Myronov and J. Lloyd-Hughes “Split cyclotron resonances in strained Ge quantum well probed by THz time-domain spectroscopy” 6th International conference on optical, optoelectronic and photonic materials and applications, Leeds, UK, 27 July – 1 August 2014. (Oral presentation) 
  89. M. Myronov “Revealing the high room and low temperature mobilities of 2D holes in a strained Ge quantum well heterostructures grown on a standard Si(001) substrate” International SiGe Technology and Devices Meeting (ISTDM 2014), Singapore, 2-4 June 2014. (Invited talk)
  90. S.D. Rhead, V.A. Shah, J.E. Halpin, M. Myronov, D.H. Patchett, P.S. Allred, V. Kachkanov, I.P. Dolbnya, N.R. Wilson, and D.R. Leadley “Tensile strain mapping in flat germanium membranes” International SiGe Technology and Devices Meeting (ISTDM 2014), Singapore, 2-4 June 2014. (Oral presentation)
  91. J. Halpin, M. Myronov, S. Rhead, and D. R. Leadley “N-type SiGe/Ge superlatticestructures for terahertz emission” International SiGe Technology and Devices Meeting (ISTDM 2014), Singapore, 2-4 June 2014. (Poster presentation)
  92. P.S. Allred, M. Myronov, S. D. Rhead, R. Warburton, G. Intermite, G. Buller, and D. R. Leadley “Optimization of epitaxial growth for thick Ge-on-Si structures used for single photon avalanche diode applications”International SiGe Technology and Devices Meeting (ISTDM 2014), Singapore, 2-4 June 2014. (Poster presentation)
  93. M. Myronov, S. D. Rhead, G. Colston, and D. R. Leadley “RP-CVD growth of high carbon content Si1-xCx epilayers using disilane and trimethylsilane precursors”International SiGe Technology and Devices Meeting (ISTDM 2014), Singapore, 2-4 June 2014. (Poster presentation)
  94. D. Patchett, M. Myronov, S. Rhead, J. Halpin, and D. Leadley “Challenges in epitaxial growth by RP-CVD of strained and relaxed GeSn epilayers on a Si substrate” International SiGe Technology and Devices Meeting (ISTDM 2014), Singapore, 2-4 June 2014. (Poster presentation)
  95. C. Morrison, M. Myronov, J. Foronda, C. Casteleiro, J. E. Halpin, S. D. Rhead, and D. R. Leadley “Quantum transport of a high mobility two dimensional hole gas in a strained Ge quantum well” International SiGe Technology and Devices Meeting (ISTDM 2014), Singapore, 2-4 June 2014.(Oral presentation)
  96. J. Foronda, C. Morrison, M. Myronov, J. E. Halpin, S. D. Rhead, and D. R. Leadley “Weak anti-localization behavior of high mobility 2D hole gas in a strained Ge QW heterostructure” International SiGe Technology and Devices Meeting (ISTDM 2014), Singapore, 2-4 June 2014.(Poster presentation)
  97. M. Myronov “Growth of high mobility strained Ge QW heterostructures” UK MBE 2014, The University of Manchester, Manchester, UK, 9th April 2014. (Invited tallk)
  98. C. Morrison, M. Myronov, P. Wiśniewski, S. Rhead, D. R. Leadley “Observation of Rashba zero-field spin splitting in a Ge 2D hole gas” Magnetism 2014, The University of Manchester, Manchester UK, 7-8 April 2014. (Oral presentation)
  99. G. R. Bell, C. Morrison, J. Foronda, M. Walker, V. A. Shah, M. Myronov, D. R. Leadley“Interdiffusion at the NiFe/Ge interface studied by X-Ray Photoemission Spectroscopy” Magnetism 2014, The University of Manchester, Manchester UK, 7-8 April 2014. (Oral presentation)
  100. 44. M. Myronov, C. Morrison, J. Halpin, S. Rhead, J. Foronda, D. Leadley “Extremely high room temperature mobility of 2D holes in a compressive strained Ge quantum well heterostructure grown by RP-CVD on a standard Si(001) substrate” E-MRS 2014 spring meeting, Lille, France, 26-30 May 2014. (Oral presentation)
  101. T. Ulyanenkova, M. Myronov, A. Ulyanenkov“Boron doped cubic silicon probed by High resolution X-ray RSMs” E-MRS 2014 spring meeting, Lille, France, 26-30 May 2014. (Poster presentation)
  102. V. Sivadasan, M. Myronov, S. Rhead and D.R. Leadley “Comparison of SiGe relaxed buffer layers grown on Si(001) substrate by forward and reverse Ge grading approaches” E-MRS 2014 spring meeting, Lille, France, 26-30 May 2014. (Oral presentation) 
  103. Van Huy Nguyen, M. Myronov, P. Allred, J. Halpin A. Dobbie and D.R. Leadley “Developments in germanium-on-silicon epitaxy by reduced pressure chemical vapor deposition” 15th International Conference on Ultimate Integration on Silicon (ULIS), Stockholm Waterfront Congress Centre, Stockholm, Sweden, 7-9 April, 2014. (Poster presentation) 
  104. V.A. Shah, O. Trushkevych, M. Myronov, S. Rhead, J. Halpin, R. Edwards, and D.R. Leadley “Tensile strained Ge membranes” 15th International Conference on Ultimate Integration on Silicon (ULIS), Stockholm Waterfront Congress Centre, Stockholm, Sweden, 7-9 April, 2014. (Poster presentation)
  105. E.H.C. Parker, M.J. Prest, J.S. Richardson Bullock, M. Myronov, T.E. Whall, D.R. Leadley T. Brien, P. Mauskopf, D. Gunnarsson and M. Prunnila “New concepts in infra-red detection” 15th International Conference on Ultimate Integration on Silicon (ULIS), Stockholm Waterfront Congress Centre, Stockholm, Sweden, 7-9 April, 2014. (Invited talk)
  106. P. M. Gammon, C. A. Fisher, V. A. Shah, M. R. Jennings, A. Pérez-Tomás, S. E. Burrows, M. Myronov, D. R. Leadley, and P. A. Mawby “The Cryogenic Testing and Characterisation of SiC PiN Diodes” International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), Miyazaki, Japan, 29 September – 4 October 2013. (Poster presentation)
  107. J. S. Reparaz, E. Chávez-Ángel, J. Gomis-Bresco, M. R. Wagner, J. Cuffe, V. A. Shah, M. Myronov, D. R. Leadley, A. Shchepetov, M. Prunnila, J. Ahopelto, F. Alzina, and C. M. Sotomayor Torres “Thermal conductivity reduction in Si and Ge free-standing membranes investigated using Raman thermometry” 19th International Workshop on Thermal Investigations of ICs and Systems, Berlin, Germany, 25-27 September 2013 (Poster presentation)
  108. M. Myronov, C. Morrison, C. Casteleiro, J. Halpin, S. Rhead, J. Foronda, D.R. Leadley “Groundbreaking room-temperature mobility of 2D holes in a strained Ge quantum well heterostructure grown by Reduced Pressure Chemical Vapour Deposition” 2013 International Conference on Solid State Devices and Materials (SSDM 2013) Fukuoka, Japan, September 24-27, 2013. (Oral presentation)
  109. G. Intermite, R.E. Warburton, M. Myronov, P. Allred, D.R. Leadley, K. Gallacher, D.J. Paul, N.J. Pilgrim, L.J.M. Lever, Z. Ikonic, R.W. Kelsall, and G.S. Buller, "Design and performance of a prototype mesa–geometry Ge–on–Si single–photon avalanche diode detector at 1310 nm and 1550 nm wavelengths", The IEEE 10th International Conference on Group IV Photonics (GFP), Seoul, Korea, August 28-30, 2013. (Oral presentation)
  110. G. Intermite, R.E. Warburton, M. Myronov, P. Allred, D.R. Leadley, K. Gallacher, D.J. Paul, N.J. Pilgrim, L.J.M. Lever, Z. Ikonic, R.W. Kelsall, and G.S. Buller, "Ge–on–Si single–photon avalanche diode near–IR detectors", UK Semiconductor 2013, Sheffield, UK, July 3-4, 2013. (Oral presentation)
  111. C. Casteleiro, M. Myronov, J.E. Halpin, V.A. Shah, D.R. Leadley “Electrical and Structural Characterization of Thermally Grown GeO2 on Epitaxial Ge on a Si(001) Substrate” The 8th International Conference on Silicon Epitaxy and Heterostructures (ICSI-8), Kyushu University, Fukuoka, Japan, June 2-6, 2013. (Poster presentation)
  112. O. Mironov, A. Hassan, S. Kiatgamolchai, M. Uhlarz, A. Dobbie, R.J.H. Morris, E. Cizmar, A. Feher, S. Gabani, V Shah, M Myronov, D.R. Leadley “Ultra High Hole Mobilities in a Pure Strained Ge Quantum Well” ICSI-8, Kyushu University, Fukuoka, Japan, June 2-6, 2013. (Oral presentation)
  113. J. S. Richardson-Bullock, M.J. Prest, M. Prunnila, D. Gunnarsson, V.A. Shah, A. Dobbie, M. Myronov, R. J. H. Morris, T. E. Whall1, E. H. C. Parker and D. R. Leadley “Hole-phonon energy loss rate in boron doped silicon” The 14th Edition of the ‘International Conference on Ultimate Integration on Silicon (ULIS 2013), The University of Warwick, Coventry, UK, 19-21 March 2013. (Poster presentation)
  114. C. Casteleiro, J.E. Halpin, V. A. Shah, M. Myronov, D.R. Leadley “Thermally grown GeO2 on epitaxial Ge on Si(001) substrate” The 14th Edition of the ‘International Conference on Ultimate Integration on Silicon (ULIS 2013), The University of Warwick, Coventry, UK, 19-21 March 2013. (Poster presentation)
  115. V.A. Shah, M. Myronov, L. Bawden, M.J. Prest, J.S. Richardson-Bullock, P.M. Gammon, S. Rhead, E.H.C. Parker, T.E Whall, D.R Leadley “Novel fabrication technique for Ge membranes” The 14th Edition of the ‘International Conference on Ultimate Integration on Silicon (ULIS 2013), The University of Warwick, Coventry, UK, 19-21 March 2013. (Poster presentation)
  116. E. Chávez, J. Gomis-Bresco, F. Alzina, J.S. Reparaz, , V.A. Shah, M. Myronov, D.R. Leadley, C.M. Sotomayor “Flexural mode dispersion in ultra-thin Ge membranes” The 14th Edition of the ‘International Conference on Ultimate Integration on Silicon (ULIS 2013), The University of Warwick, Coventry, UK, 19-21 March 2013. (Poster presentation)
  117. T. E. Whall, M. J. Prest, J. S. Richardson-Bullock, V. A. Shah, M. Myronov, E. H. C. Parker and D. R. Leadley.M. Prunnila and D. Gunnarsson.T. Brien, D. Morozov and P. Mauskopf “Cooltronics: a new low-temperature tunneling-technology based on Silicon” The 14th Edition of the ‘International Conference on Ultimate Integration on Silicon (ULIS 2013), The University of Warwick, Coventry, UK, 19-21 March 2013. (Invited talk)
  118. A.H.A. Hassan, O.A. Mironov, A. Feher, E. Cizmar, S. Gabani, R.J.H. Morris, A. Dobbie, M. Myronov, and D.R. Leadley “Pure Ge Quantum Well with High Hole Mobility” The 14th Edition of the ‘International Conference on Ultimate Integration on Silicon (ULIS 2013), The University of Warwick, Coventry, UK, 19-21 March 2013. (Poster presentation)
  119. P. Velha, K. F. Gallacher, D. Dumas, D. J. Paul, M. Myronov, and D. Leadley “Direct Band-gap Electroluminescence from Strained n-Ge Light Emitting Diodes” 222nd Meeting of the Electrochemical Society, Honolulu, Hawaii Convention Center and the Hilton Hawaiian Village, Hawaii 7-12 October 2012. (Oral presentation)
  120. V. A. Shah, M. Myronov, C. Wongwanitwatana, R. Morris, M. Prest, J. Richardson-Bullock, E. Parker, T. Whall, and D. Leadley “Simple Fabrication of Suspended Germanium Structures and Their Electrical Properties from High Quality Ge on Si(001) Layers” 222nd Meeting of the Electrochemical Society, Honolulu, Hawaii Convention Center and the Hilton Hawaiian Village, Hawaii 7-12 October 2012. (Oral presentation)
  121. P. Velha, D. J. Paul, M. Myronov, and D. Leadley “Long Wavelength ≥1.9 μm Germanium for Optoelectronics Using Process Induced Strain” 222nd Meeting of the Electrochemical Society, Honolulu, Hawaii Convention Center and the Hilton Hawaiian Village, Hawaii 7-12 October 2012. (Oral presentation)
  122. K. F. Gallacher, P. Velha, D. J. Paul, I. Maclaren, M. Myronov, and D. Leadly “Low Specific Ohmic Contacts to n-type Germanium Using a Low Temperature NiGe Process” 222nd Meeting of the Electrochemical Society, Honolulu, Hawaii Convention Center and the Hilton Hawaiian Village, Hawaii 7-12 October 2012. (Oral presentation)
  123. P. Velha, K. F. Gallacher, D. Dumas, D. J. Paul, M. Myronov, and D. Leadley “Direct Band-gap Electroluminescence from Strained n-Ge Light Emitting Diodes” 222nd Meeting of the Electrochemical Society, Honolulu, Hawaii Convention Center and the Hilton Hawaiian Village, Hawaii 7-12 October 2012. (Oral presentation)
  124. C. Wongwanitwattana, V. A. Shah, M. Myronov, E. Parker, T. Whall, and D. Leadley “Accurate Reactive Ion Etching of Si, Ge and P Doped Ge in an SF6-O2 Radio-Frequency Plasma” 222nd Meeting of the Electrochemical Society, Honolulu, Hawaii Convention Center and the Hilton Hawaiian Village, Hawaii 7-12 October 2012. (Poster presentation)
  125. T. Ulyanenkova, M. Myronov, A. Benediktovitch, A. Mikhalychev, J. Halpin and A. Ulyanenkov “Characterization of SiGe thin films by laboratory X-ray instrument” The 11th Biennial Conference on High Resolution X-Ray Diffraction and Imaging, Saint-Petersburg, Russia, 15-20 September, 2012. (Poster presentation)
  126. D.J. Norris, A Dobbie, M Myronov, DR Leadley, EHC Parker and T Walther “Surface roughening of chemical vapour deposited SiGe layers” The 15th European Microscopy Congress Manchester Central, UK 16-21 September 2012 (Oral presentation)
  127. P. Velha, K. Gallacher, D. Dumas, D.J. Paul, M. Myronov and D.R. Leadley "Tuning the Electroluminescence of n-Ge LEDs using Process Induced Strain" IEEE Group IV Photonics 2012, San Diego, USA, August 29-31, 2012. (Oral presentation)
  128. B. Xu, C. Li, M. Myronov, and K. Fobelets “Si1-xGex Nanowire Arrays for Thermoelectric Power Generation” 2012 International Silicon-Germanium Technology and Device Meeting (ISTDM) UC Berkeley, Berkeley, CA, USA, 4-6 June 2012. (Oral presentation)
  129. A. Dobbie, M. Myronov, R.J.H. Morris, M.J. Prest, J.S. Richardson-Bullock, A. Hassan, V. Shah, E.H.C. Parker, T. Whall, and D. Leadley “Ultra-High Hall Mobility (1x106 cm2V-1s-1) in a Two-Dimensional Hole Gas in a Strained Germanium Quantum Well Grown by Reduced Pressure CVD” 2012 International Silicon-Germanium Technology and Device Meeting (ISTDM) UC Berkeley, Berkeley, CA, USA, 4-6 June 2012. (Oral presentation)
  130. J. Halpin, V. Shah, M. Myronov, and D. Leadley “Epitaxial growth of highly strained SiGe layers directly on Si(001) substrate” 2012 International Silicon-Germanium Technology and Device Meeting (ISTDM) UC Berkeley, Berkeley, CA, USA, 4-6 June 2012. (Poster presentation)
  131. M. Myronov, V. A. Shah, S. Rhead, and D. R. Leadley “Epitaxial growth of tensile strained SiB alloy on a Si substrate” 2012 International Silicon-Germanium Technology and Device Meeting (ISTDM) UC Berkeley, Berkeley, CA, USA, 4-6 June 2012. (Poster presentation)
  132. V. A. Shah, M. Myronov, C. Wongwanitwatana, R. J. H. Morris, M. J. Prest, J. Richardson-Bullock, E. H. C. Parker, T. E. Whall, and D. R. Leadley “Simple fabrication of suspended Germanium structures and their electrical properties from high quality Ge on Si(001) layers” 2012 International Silicon-Germanium Technology and Device Meeting (ISTDM) UC Berkeley, Berkeley, CA, USA, 4-6 June 2012. (Poster presentation)
  133. V.H. Nguyen, A. Dobbie, M. Myronov, and D.R. Leadley “Understanding the Role of the Low Temperature Seed Layer in the Growth of Low Defect Relaxed Germanium Layers on (111) Silicon by Reduced Pressure CVD” 2012 International Silicon-Germanium Technology and Device Meeting (ISTDM) UC Berkeley, Berkeley, CA, USA, 4-6 June 2012. (Poster presentation)
  134. M. Myronov, J. Halpin, H.A.A. Alabdulali and D.R. Leadley “A new approach to grow very thin, smooth and relaxed SiGe epilayers on a Si(100) substrate” E-MRS 2012 Spring Meeting, Strasbourg, France, 15-17 May, 2012(Oral presentation)
  135. P. Velha, D.J. Paul, M. Myronov, D.R. Leadley “Process-Induced Strain Bandgap Reduction in Germanium Nanostructures” Conference on Lasers and Electro-Optics (CLEO) 2012, San Jose, California, USA, 6-11 May 2012. (Oral presentation)
  136. P. Velha, K. Gallacher, D. C. Dumas, M. Myronov, D. R. Leadley, and D. J. Paul “Direct band-gap electroluminescence from strained n-doped germanium diode” Conference on Lasers and Electro-Optics (CLEO) 2012, San Jose, California, USA, 6-11 May 2012. (Oral presentation)
  137. M. Myronov, Xue-Chao Liu, A. Dobbie and D.R. Leadley “Precise thickness and strain control during epitaxial growth of strained Ge/SiGe multilayers by industrial class CVD”, 2011 International Conference on Solid State Devices and Materials (SSDM 2011) Aichi Industry & Labor Center (WINC AICHI), Nagoya, Japan, September 28-30, 2011. (Oral presentation)
  138. R.J.H. Morris M.G. Dowsett, R. Beanland, A. Dobbie, M. Myronov and D.L. Leadley “O2+ probe-sample conditions for ultra-low energy SIMS depth profiling of Si0.4Ge0.6/Ge quantum well structures” 18th International Conference on Secondary Ion Mass Spectrometry (SIMS XVIII), Riva del Garda, Trentino, Italy, 18-23 September 2011.
  139. L. Lever, Y. Hu, M. Myronov, X. Liu, N. Owens, F.Y. Gardes, I.P. Marko, S.J. Sweeney, Z. Ikoni´c, D.R. Leadley, G.T. Reed, and R.W. Kelsall “Strain engineering of the electro-absorption response in Ge/SiGe multiple quantum well heterostructures” The 8th International Conference on Group IV Photonics, Royal Society Place, London, UK, 14-16 September 2011.
  140. M. Myronov “High hole mobility strained Ge quantum well heterostructures grown by Reduced Pressure Chemical Vapor Deposition”, 7th International Conference on Si epitaxy and heterostructures ICSI-7, Leuven, Belgium August 28 – September 1, 2011. (Invited talk)
  141. Van Huy Nguyen, A. Dobbie, M. Myronov, D.J. Norris, T. Walther,D.R. Leadley “Epitaxial Growth by RP-CVD of Relaxed Germanium Layers on (110) and (111) Silicon Substrates” ”, 7th International Conference on Si epitaxy and heterostructures ICSI-7, Leuven, Belgium August 28 – September 1, 2011. (Oral presentation)
  142. V.A. Shah, A. Dobbie, M. Myronov, D.R. Leadley “Reverse Terrace Graded SiGe substrates for CMOS and Optoelectronic Integration”, 7th International Conference on Si epitaxy and heterostructures ICSI-7, Leuven, Belgium August 28 – September 1, 2011. (Poster presentation)
  143. J. S. Richardson-Bullock, M.J. Prest, J.T. Muhonen, M. Prunnila, D. Gunnarsson, V.A. Shah, R.J.H. Morris, A. Dobbie, M. Myronov, T.E. Whall, E.H.C. Parker and D.R. Leadley“Improved Cooling Performance in Strained Silicon Tunnel Junctions” ”, 7th International Conference on Si epitaxy and heterostructures ICSI-7, Leuven, Belgium August 28 – September 1, 2011.(Poster presentation)
  144. M. J. Prest, J. T. Muhonen, M. Prunnila, D. Gunnarsson, J. S. Richardson-Bullock, V. A. Shah, R. J. H. Morris, A. Dobbie, M. Myronov, T. E. Whall, E. H. C. Parker, and D. R. Leadley “Strain Enhancement of Electron Cooling in Silicon-Superconductor Tunnel Junctions”26th International conference on low temperature physics, Beijing, China 10-17 August 2011. (Poster presentation)
  145. Gary Ternent, Douglas J. Paul, Charles N. Ironside, Kris Seuranine, Donald MacLaren, Mike Kelly, Dingli Zuo, David R. Leadley, Maksym Myronov “Sub-50 nm GaAs/AlAs and Si/SiGe Self-Aligned Resonant Tunnelling Diodes” UK Semiconductors 2011, Endcliffe Village, University of Sheffield conference 6-7 July 2011. (Invited talk)
  146. D.J. Norris, I.M. Ross, A. Dobbie, M. Myronov, T.E. Whall, E.H.C. Parker, D.R. Leadley and T. Walther “A TEM study of Ge-on-(111)silicon structures for potential use in high performance PMOS device technology” Proc. MSM-17, Cambridge, UK, J. Phys Conf. Ser. 326 012023, 2011.
  147. E. Simoen, J. Mitard, B. De Jaeger, G. Eneman, A. Dobbie, M. Myronov, D.R. Leadley, M. Meuris, T. Hoffmann and C. Claeys “Low-frequency noise in strained and relaxed Ge pMOSFETs” International Conference on Solid-State and Integrated Circuit Technology 2010 (ICSICT 2010) InterContinental Hotel, Shanghai, China, 1-4 November 2010, p.69. (Oral presentation)
  148. A. Komatsu, K. Nasu, Y. Hoshi, T. Kurebayashi, K. Sawano, M. Myronov, H. Nohira, Y. Shiraki “Study of HfO2/Si/strained-Ge/SiGe using Angle Resolved X-ray Photoelectron Spectroscopy” 218th ECS Meeting High Dielectric Constant and Other Dielectric Materials for Nanoelectronics and Photonics, October 10 - October 15, 2010, Las Vegas, NV p. 1543 (Oral presentation)
  149. M. Myronov, K. Sawano, D.R. Leadley and Y. Shiraki “Very high mobility 2D holes in strained Ge quantum well epilayers grown by Reduced Pressure Chemical Vapor Deposition”2010 International Conference on Solid State Devices and Materials (SSDM 2010), The University of Tokyo, Tokyo, Japan, 22-24 September 2010, p. K-8-1. (Oral presentation)
  150. Y. Kawamura, M. Uematsu, K Itoh, Y. Hoshi, K. Sawano, Y. Shiraki, E. Haller and M. Myronov“Ge Self-Diffusion in Compressively strained Ge Grown on Relaxed Si0.2Ge0.8” 2010 International Conference on Solid State Devices and Materials (SSDM 2010), The University of Tokyo, Tokyo, Japan, 22-24 September 2010, p. B-6-5. (Oral presentation)
  151. J. Mitard, B. De Jaeger, E. Eneman, A. Dobbie, M. Myronov, M. Kobayashi, J. Geypen, H. Bender, B. Vincent, R. Krom, J. Franco, G. Winderickx, E. Vrancken, W. E. Wang, J. Tseng, R. Loo, K. De Meyer, M. Caymax, L. Pantisano, D. R. Leadley, M. Meuris, P. Absil, S. Biesemans, T. Hoffmann “High Hole-Mobility 65nm Biaxially-Strained Ge-pFETs: Fabrication, Analysis and Optimization” 2010 International Conference on Solid State Devices and Materials (SSDM 2010), The University of Tokyo, Tokyo, Japan, 22-24 September 2010, p. C-9-2. (Oral presentation)
  152. I.D. Feranchuk, F.Rinaldi, S. Menzel, M. Myronov, A. Dobbie, D.R. Leadley, A. Zhilik, K. Saito, and A. Ulyanenkov“HIGH-RESOLUTION RECIPROCAL SPACE MAPPING OF MULTILAYERS WITH CONCENTRATION AND RELAXATION GRADIENTS” 10th Biennial Conference on High Resolution X-Ray Diffraction and Imaging, University of Warwick, UK, 20th-23rd September 2010 (Poster presentation)
  153. A. Zhilik, M. Myronov, A. Dobbie, D. R. Leadley, H. Guerault, T. Ulyanenkova, A. Benediktovitch, A. Ulyanenkov “RECIPROCAL SPACE MAPPING OF GRADED SiGe BUFFERS GROWN ON NON-STANDARD ORIENTATION Si SUBSTRATES” 10th Biennial Conference on High Resolution X-Ray Diffraction and Imaging, University of Warwick, UK, 20th-23rd September 2010. (Poster presentation)
  154. A. Ulyanenkov, M. Myronov, A. Dobbie, D.R. Leadley, H. Guerault, A. Benediktovitch, A. Zhilik, T. Ulyanenkova, K. Shcherbachev “High-Resolution X-ray Reciprocal Space Mapping of High Ge Content Graded SiGe Buffers Grown on Non-Standard Orientation Si Substrates” The 16th International Conference on Crystal Growth(ICCG-16) in conjunction with The 14th International Conference on Vapor Growth and Epitaxy(ICVGE-14), Beijing, China, 8-13 August 2010. (Poster presentation)
  155. J. Halpin, A. Dobbie, V. A. Shah, M. Myronov and D. R. Leadley “Understanding Tensile Strain in Relaxed Germanium Epitaxial Layers on (001) Silicon Substrates” Condensed Matter and Materials Physics (CMMP 2010) conference, The University of Warwick, UK, 2010. (Poster presentation)
  156. M. Myronov, Xue-Chao Liu A. Dobbie and D.R. Leadley “Monolayer thickness control during epitaxial growth of high Ge content strained Ge/SiGe multilayers by RP-CVD” The 16th International Conference on Crystal Growth(ICCG-16) in conjunction with The 14th International Conference on Vapor Growth and Epitaxy(ICVGE-14), Beijing, China, 8-13 August 2010. (Oral presentation)
  157. A. Dobbie, M. Myronov, Van Huy Nguyen, Xue-Chao Liu and D. R. Leadley “Thermal Stability of Strained Ge Layers Grown on Reverse-Graded Si0.2Ge0.8 Relaxed Buffers by RP-CVD”UK Semiconductors 2010 conference, The University of Sheffield, UK, 7-8 July 2010. (Poster presentation)
  158. Xue-Chao Liu,M. Myronov, A. Dobbie, V. H. Nguyen, R. J. H. Morris, D. R. Leadley “Growth and Characterization of Ge/SiGe Multiple Quantum Wells”UK Semiconductors 2010 conference, The University of Sheffield, UK, 7-8 July 2010. (Poster presentation)
  159. Van Huy Nguyen, A. Dobbie, M. Myronov, and D.R. Leadley “Defect Evaluation in Ge and Si1-xGex Epitaxial Layers using an Iodine-Based Selective Etchant” UK Semiconductors 2010 conference, The University of Sheffield, UK, 7-8 July 2010. (Poster presentation)
  160. V. A. Shah, A. Dobbie, M. Myronov, D.R. Leadley “Thickness studies of high quality Ge layers on Si (001) substrates” UK Semiconductors 2010 conference, The University of Sheffield, UK, 7-8 July 2010. (Poster presentation)
  161. M. Myronov, V.A. Shah, Xue-Chao Liu, A. Dobbie, Van H. Nguyen, D.R. Leadley and E.H.C. Parker “Highly strained (100)Si epilayers grown on SiGe by RP-CVD” E-MRS 2010 Spring Meeting, Strasbourg, France, 7-11 June, 2010. (Oral presentation)
  162. M. Myronov, Xue-Chao Liuand D.R. Leadley “Epitaxial growth of Ge layers by RP-CVD using a digermane precursor” E-MRS 2010 Spring Meeting, Strasbourg, France, 7-11 June 2010. (Oral presentation)
  163. A. Dobbie, M. Myronov, Xue-Chao Liu, Van H. Nguyen, E. H. C. Parker and D. R. Leadley “Relaxation of Strained Germanium Layers Grown on Si0.2Ge0.8 Relaxed Buffers by RP-CVD with in-situ H2 Annealing” -MRS 2010 Spring Meeting, Strasbourg, France, 7-11 June 2010. (Oral presentation)
  164. A. Dobbie, M. Myronov, Xue-Chao Liu, Van H. Nguyen, E. H. C. Parker and D. R. Leadley “Investigation of the Thermal Stability of Strained Ge Layers Grown at Low Temperature by Reduced-Pressure Chemical Vapour Deposition on Relaxed Si0.2Ge0.8 Relaxed Buffers” MRS Spring Meeting, San Francisco, USA 5-9 April 2010. (Oral presentation)
  165. Xue-Chao Liu, M. Myronov, A. Dobbie, Van H. Nguyen, and D. R. Leadley “Non-destructive thickness characterization of Si and Ge based heterostructure by x-ray diffraction and reflectivity” 5th International SiGe Technology and Device Meeting (ISTDM 2010) Stockholm, Sweden, 24-26 May 2010. (Poster presentation)
  166. V.A. Shah, A. Dobbie, M. Myronov, D.R. Leadley “High quality relaxed Ge layers grown directly on a Si (001) substrate” 5th International SiGe Technology and Device Meeting (ISTDM 2010) Stockholm, Sweden, 24-26 May 2010. (Poster presentation)
  167. A. Komatsu, K. Nasu, Y. Hoshi, T. Kurebayashi, K. Sawano, M. Myronov, H. Nohira, Y. Shiraki “Study of HfO2/Si/strained-Ge/SiGe using Angle Resolved x-ray Photoelectron Spectroscopy” The 57th Spring Meeting of The Japan Society of Applied Physics, March 17-20, 2010, Tokai University, Shonan Campus. (Oral presentation)
  168. K. Nasu, K. Sawano, Y. Hoshi, T. Kurebayashi, M. Myronov, Y. Shiraki ”Improvement of strain stability in strained Ge channel by Si cap layer” The 57th Spring Meeting of The Japan Society of Applied Physics, March 17-20, 2010, Tokai University, Shonan Campus. (Oral presentation)
  169. D.J. Norris, I.M. Ross, A.G. Cullis, T. Walther, M. Myronov, A. Dobbie, T. Whall, E.H.C. Parker, D.R. Leadley, B. De Jaeger, W. Lee and M. Meuris “TEM analysis of Si-passivated Ge-on-Si MOSFET structures for high performance PMOS device technology” Electron Microscopy and Analysis Group Conference 2009 (EMAG 2009); Journal of Physics: Conference Series 241 (2010) 012044.
  170. M. Myronov, V.A. Shah, A. Dobbie, Xue-Chao Liu, Van H. Nguyen and D. R. Leadley “Compressively strained Ge channel heterostructures grown by RP-CVD for the next generation CMOS devices”. 2009 International Conference on Solid State Devices and Materials (SSDM 2009), October 6-9, 2009, Sendai Kokusai Hotel, Sendai, Japan, pp. . (Oral presentation)
  171. D. R. Leadley, V.A. Shah, A. Dobbieand M. Myronov “Reverse graded virtual substrates for strained Ge devices”. UK Semiconductors 2009, July 1-2, 2009, Firth Court, University of Sheffield, Sheffield, UK, pp. C-O-11. (Oral presentation)
  172. M. Myronov“Realization of globally strained Ge layers”  E-MRS 2009, Strasbourg, France, June 8-12, 2009p. (Invited talk)
  173. M. Myronov, A. Dobbie, V.A. Shah and D.R. Leadley “Epitaxial growth of compressive strained Ge layers on reverse linearly graded virtual substrate by RP-CVD” E-MRS 2009, Strasbourg, France, June 8-12, 2009. (Oral presentation)
  174. A. Dobbie, M. Myronov, X. Liu, E. H. C. Parker and D. R. Leadley “Effect of Si1-xGex Growth Rate on the Threading Dislocation Density in Fully Relaxed Si1-xGex/Si(100) Virtual Substrates Grown at High Temperature by RP-CVD” E-MRS 2009, Strasbourg, France, June 8-12, 2009. (Poster presentation)
  175. M. Myronov, A. Dobbie, V.A. Shah and D.R. Leadley “Low temperature epitaxial growth of compressive strained Ge layers on reverse linearly graded virtual substrate by RP-CVD” 6th International Conference on Silicon Epitaxy and Heterostructures (ICSI-6), May 17 – 22, 2009, Los Angeles, California, USA. (Oral presentation)
  176. M. Myronov, D.R. Leadley and Y. Shiraki “Demonstration of high mobility holes in a strained Ge channel grown on a novel thin and relaxed SiGe/LT-SiGe/Si(001) virtual substrate” 2008 International Conference on Solid State Devices and Materials (SSDM 2008), September 24-26, 2008, Tsukuba International Congress Center, Tsukuba, Ibaraki, Japan. (Oral and poster presentations)
  177. M. Myronov, K. Sawano and Y. Shiraki “Observation of more mobile and conductive holes in strained Ge epilayers than electrons in strained Si ones at room-temperature” European Materials Research Society 2008 conference (E-MRS 2008), May 26 – 30, 2008, Strasbourg, France, p.I-5. (Oral presentation)
  178. M. Myronov, K. Sawano, Y. Shiraki and K.M. Itoh “Observation of pronounced effect of compressive strain on room-temperature transport properties of 2DHG confined in Ge quantum wells” ISTDM 2008, May 11-14, 2008, Hsinchu, Taiwan, pp.151-152. (Poster presentation)

Books

1. M. Myronov “Chapter 3: Molecular Beam Epitaxy of High Mobility Silicon, Silicon Germanium and Germanium Quantum Well Heterostructures” in Molecular Beam Epitaxy: From Research to Mass Production 2nd edition, Elsevier, (2018).

2. D. Leadley, V. Shah, J. Ahopelto, F. Alzina, E. Chávez-Ángel, J. Muhonen, M. Myronov, A. G. Nassiopoulou, H. Nguyen, E. Parker, J. Pekola, M. Prest, M. Prunnila, J. S. Reparaz, A. Shchepetov, C. Sotomayor-Torres, K. Valalaki and T. Whall. Thermal Isolation Through Nanostructuring. Beyond-CMOS Nanodevices 1, John Wiley & Sons, Inc.: 331-363 (2014).

3. D. Leadley, M. Prest, J. Ahopelto, T. Brien, D. Gunnarsson, P. Mauskopf, J. Muhonen, M. Myronov, H. Nguyen, E. Parker, M. Prunnila, J. Richardson-Bullock, V. Shah, T. Whall and Q.-T. Zhao. Silicon-Based Cooling Elements. Beyond-CMOS Nanodevices 1, John Wiley & Sons, Inc.: 303-330 (2014).

4. D. Leadley, A. Dobbie, M. Myronov, V. Shah, and E.H.C. Parker “Chapter 3: Strained Si and Ge channels” pp.69-126, in Nanoscale CMOS: Innovative Materials, Modeling and Characterization edited by F. Balestra, ISBN: 978-1-84821-180-3, 544 pages, Wiley, (June 2010).