Joint Group Leader
Epitaxial growth of Si based layers using solid source molecular beam epitaxy (SS-MBE) and low pressure chemical vapour deposition (LP-CVD).
Dr Tim Grasby is a permanent Research Fellow in the Nano-Silicon group, primarily working on epitaxy. He was pivotal in establishing state-of-the-art solid source MBE and CVD epitaxy facilities at Warwick and holds 5 patents in the Si-Ge epitaxy field. He has over 40 publications, has given several invited talks at international conferences and has an EPSRC grant to develop and realize defect-free strain tuning platforms. He is co-founder and Technical Director of AdvanceSis.
Department of Physics, University of Warwick, Coventry, CV4 7AL
Contact Details:Office: P557
+44 (0) 2476523399