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Novel Device Architecture

HfO2 gated p-MOS device

 

SiON gated n-MOS device

High k dielectrics for SiGe surface channel MOSFETs
(Left) p-MOS with HfO2 (fabricated at KTH, Sweeden)
(Right)n-MOS with SiON (fabricated in Warsaw)

p-MOS devices show 50% enhancement in drain current