HfO₂ gated p-MOS device

SiON gated n-MOS device

High k dielectrics for SiGe surface channel MOSFETs
(Left) p-MOS with HfO₂ (fabricated at KTH, Sweeden)
(Right)n-MOS with SiON (fabricated in Warsaw)

p-MOS devices show 50% enhancement in drain current