Proposals 2010
Gavin TO DO
1. experiment plan for STMBE (Mn/GaAs)
2. outline proposal for EPSRC-JST
Documents etc. for collaboration and proposal preparation.
Full scheme notes for Royal Soc IJP
Royal Society proposal version 5
GO on GaAs recipes and results
First sample: AFM images summary
Second batch of samples:
Name | 1st etch | 2nd etch | description | AFM | Suggested experiments (Anan STMBE) |
GOGA1a | HCl 5 min. | none | strong drying features +/- 3 nm | Avoid STM (maybe a bit rough). Observe RHEED during anneal. Try growing InAs QDs using a standard recipe, watch RHEED. Can return to Warwick for electron microscopy & AFM. |
|
GOGA2a | HCl 5 min. | poly-S 1 min. | nice partial sheet coverage at ~50%, single sheets MnSb growth - after deposition RHEED had diffuse circular diffraction pattern (polycrystallinity?) |
Observe RHEED during anneal then look at room temp. STM. Try growing InAs QDs using a standard recipe then do STM if RHEED looks promising. |
|
GOGA3a | poly-S 20 min. | none | some pits and thickly covered areas with folded sheets other areas smoother with folds and >50% coverage |
Observe RHEED during anneal then look at room temp. STM. Try growing 100 nm GaAs using standard recipe and watch RHEED, then return to Warwick for electron microscopy. |
|
GOGA4a | polishing etch (H2SO4:H2O2:H2O) |
HCl 5 min. | damaged by 1st etch | Check degassing behaviour, check RHEED behaviour in STMBE. If it looks OK, try GaAs growth as above, then to Warwick. |
|
Surface preparation: suggested degassing to 300*C in treatment chamber followed by annealing to 500*C watching RHEED.
Substrate information: GaAs(001) (+/- 0.1 degree, 0.35mm), Si doped n-type (probably in 10E17 cm-3 range), single side polished. Wafer Tech WV 18273/Si #10