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Publications

WRAP: Warwick Research Archive Portal: Author is "Ashley,T,Jefferies,R,Crouch,M,Maltby,C,Vavasour,O,Espley-Jones,R,Ashwin,M" AND Divisions matches any of "Engineering". Results ordered -Date Deposited.
Vavasour, Oliver J., Jefferies, Richard, Walker, Marc, Roberts, Joseph W., Meakin, Naomi R., Gammon, P. M., Chalker, Paul R and Ashley, Tim (2019) Data for Effect of HCl cleaning on InSb–Al2O3 MOS capacitors. [Dataset]
Vavasour, Oliver J., Jefferies, Richard, Walker, Marc, Roberts, Joseph W., Meakin, Naomi R., Gammon, P. M., Chalker, Paul R and Ashley, Tim (2019) Effect of HCl cleaning on InSb–Al2O3 MOS capacitors. Semiconductor Science and Technology, 34 (3). 035032. doi:10.1088/1361-6641/ab0331
Pugh, Jonathan R., Heard, Peter J., Nash, Geoff R., Ashley, Tim, Rarity, John G. and Cryan, Martin J. (2008) Design and fabrication of a mid infra-red photonic crystal defect laser in indium antimonide. In: Conference on Lasers and Electro-Optics, San Jose, California, United States, 4-9 May 2008. Published in: Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference and Photonic Applications Systems Technologies ISBN 9781557528599. doi:10.1109/CLEO.2008.4552098
Radosavljevic, M., Ashley, Tim, Andreev, A., Coomber, S. D., Dewey, G., Emeny, M. T., Fearn, M., Hayes, D. G., Hilton, K. P., Hudait, M. K. et al. <#> (2008) High-performance 40nm gate length InSb p-channel compressively strained quantum well field effect transistors for low-power (VCC=0.5V) logic applications. In: IEEE International Electron Devices Meeting, 2008. IEDM 2008., San Francisco, CA, 15-17 Dec 2008. Published in: IEEE International Electron Devices Meeting, 2008. IEDM 2008. ISBN 9781424423774. doi:10.1109/IEDM.2008.4796798
Pugh, J. R., Cryan, M. J., Buss, I. J., Nash, G. R., Ashley, Tim and Rarity, J. R. (2008) Finite difference time domain modelling of non-ideal facets in Mid Infrared lasers. In: 2008 IET 7th International Conference on Computation in Electromagnetics, 2008. CEM 2008. , Brighton, UK, 7-10 Apr 2008. Published in: 2008 IET 7th International Conference on Computation in Electromagnetics, 2008. CEM 2008 pp. 210-211. ISBN 9780863418914. doi:10.1049/cp:20080265
Nash, G. R., Przeslak, S. J. B., Smith, S. J., de Valicourt, G., Andreev, A. D., Carrington, P. J., Yin, M., Krier, A., Coomber, S. D., Buckle, L., Emeny, M. T. and Ashley, Tim (2009) Mid-infrared GaInSb/AlGaInSb quantum well laser diodes. In: Conference on Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference. CLEO/QELS 2009 , Baltimore, MD, 2-4 Jun 2009. Published in: Conference on Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference. CLEO/QELS 2009 ISBN 9781557528698.
Ashley, Tim, Emeny, M. T., Hayes, D. G., Hilton, K. P., Jefferies, R., Maclean, J. O., Smith, S. J., Tang, A. W-H., Wallis, D. J. and Webber, P. J. (2009) High-performance InSb based quantum well field effect transistors for low-power dissipation applications. In: 2009 IEEE International Electron Devices Meeting (IEDM), Baltimore, MD, 7-9 Dec 2009. Published in: 2009 IEEE International Electron Devices Meeting (IEDM) pp. 1-4. ISBN 9781424456390. doi:10.1109/IEDM.2009.5424207
Ashley, Tim, Emeny, M. T., Hayes, D. G., Hilton, K. P., Jefferies, R., Maclean, J. O., Smith, S. J., Tang, W. A., Webber, P. J. and Williams, G. M. (2010) High performance InSb QWFETs for low power dissipation millimetre wave applications. In: 2010 European Microwave Integrated Circuits Conference (EuMIC), Paris, France, 27-28 Sep 2010 pp. 158-161. ISBN 9781424472314.
Litvinenko, K., Nikzad, L., Pidgeon, C., Allam, J., Cohen, L., Ashley, Tim, Emeny, M., Zawadzki, W. and Murdin, B. (2008) Temperature dependence of the electron Landé g factor in InSb and GaAs. Physical Review B (Condensed Matter and Materials Physics), Volume 77 (Number 3). Article number 033204. doi:10.1103/PhysRevB.77.033204
Lindsay, A., O'Reilly, E., Andreev, A. and Ashley, Tim (2008) Theory of conduction band structure of InNxSb1−x and GaNxSb1−x dilute nitride alloys. Physical Review B (Condensed Matter and Materials Physics), Volume 77 (Number 16). Article number 033204. doi:10.1103/PhysRevB.77.165205