Research facilities and techniques

Epitaxial Growth techniques and facilities

Chemical vapour Deposition

Reduced Pressure Chemical Vapour Deposition (RP-CVD) system allows to do epitaxy on 100 mm or 150 mm diameter wafers compatible with the highest standards of industrial fabrication facilities. Wafers are loaded and unloaded in ISO3 clean room.

Epi materials: All group IV doped and undoped semiconductors (Si, Ge, C, Sn and their alloys like SiGe, SiC, 3C-SiC, 4H-SiC, GeSn, GeSnSi, GeC, SiB, GeB etc). Doping with B, As and P.

Substrate materials: Si, SOI, SOS, Sapphire, 4H-SiC, 6H-SiC, Ge, GaAs, GaP, etc. Paterned with SiO₂ or Si₃N₄ masks substrates.

Molecular Beam Epitaxy

Solid Source Molecular Beam Epitaxy (SS-MBE) system allows to do epitaxy on small samples or 75 mm or 100 mm diameter wafers.

Epi materials: Doped with B or Sb and undoped Si, Ge, SiC, and SiGe semiconductors. Oxide materials (GeO₂, SiO2, Al2O3, MgO etc). Metals and superconductors (Al, Nb, etc).

Substrate materials: Si, SOI, SOS, Sapphire, 4H-SiC, 6H-SiC, Ge, GaAs etc

Materials and devices structural characterisation techniques

Cross sectinal and plan view transmission electron microscopy (TEM)
Scanning Electron Microscopy (SEM)
Atomic Force Microscopy (AFM)
Optical microscopy
High resolution x-ray diffraction (XRD)
X-ray reflectivity
Secondary ion mass spectrometry (SIMS)
Total Reflection X-ray Fluorescence (TXRF)
X-ray photoelectron spectroscopy (XPS)

Materials and devices optical characterisation techniques

Fourier-transform infrared spectroscopy (FTIR)
Spectroscopic Ellipsometry (SE)
Raman spectroscopy
Photoluminescence spectroscopy (PL)

Materials and devices electrical and magnetotransport characterisation techniques

Various types of electronic devices including MOSFET, MODFET, FinFET, HBT, diode, capacitance dot, TLM, Hall-bar, Quantum Dot, Qunatum wire, different types of sensors, and many others can be measured.

Wafer probe

AC and DC measurements of voltage, current, capacitance and resistance at temperatures in the range of 0.3 - 800 K and magnetic fields up to 12 T
Resistivity and Hall effect measurements
4 Point Probe resistivity (4PP)
Electrochemical C-V (eC-V)
Carrier mobility and carrier density
Mobility Spectrum Analysis (MSA) including analysis of carriers scattering mechanisms
Input/output device characteristics: threshold voltage, subthreshold slope, transconductance etc
Capacitance-Voltage: carrier density, oxide thickness, effective mobility etc
Contacts resistance and related parameters
Low frequency (1/f) noise
High frequency characteristics
Quantum phenomena including Quantum Hall Effect, Shubnikov-de Haas oscillations, weak antilocalization etc
Thermal conductivity and related parameters

Devices fabrication techniques

All device fabrication equipment is located in ISO3-ISO5 clean rooms

Materials surface cleaning with wet chemicals including HF
Materials wet etching
Thermal growth of SiO₂ and GeO₂
Thermal evaporation of metals
Magnetron sputtering of metals and dielectrics
Contacts activation
Materials and devices annealing in various atmosphere
Optical lithography down to ~1 um
Dicing and sawing
Packaging
Wedge and ball bonding of contacts