Nathaniel P. Gallop, Dumitru Sirbu, David Walker, James Lloyd-Hughes, Pablo Docampo and Rebecca L. Milot
ACS Photonics 10 4022, (October 2023) web pdf Show abstract

Jake D. Hutchinson, Edoardo Ruggeri, Jack M. Woolley, Géraud Delport, Samuel D. Stranks, Rebecca L. Milot
Advanced Functional Materials 2305736, (August 2023) web pdf Show abstract

J. Lloyd-Hughes, P.M. Oppeneer, T. Pereira dos Santos, A. Schleife, S. Meng, M.A. Sentef, M. Ruggenthaler, A. Rubio, I. Radu, M. Murnane, X. Shi, H. Kapteyn, B. Stadtmüller, K.M. Dani, F.H. da Jornada, E. Prinz, M. Aeschlimann, R.L. Milot, M. Burdanova, J. Boland, T. Cocker and F. Hegmann
J. Phys.: Cond. Matt. 33 353001 (July 2021) web pdf abstract

D. Sirbu, F. H. Balogun, R. L. Milot and P. Docampo
Advanced Energy Materials (May 2021) web pdf Show abstract

U. Banin, N. Waiskopf, L. Hammarström, G. Boschloo, M. Freitag, E.M.J. Johansson, J. Sá, H. Tian, M.B. Johnston, L.M. Herz, R.L. Milot, M.G. Kanatzidis, W. Ke, I. Spanopoulos, K.L. Kohlstedt, G.C. Schatz, N. Lewis, T. Meyer, A.J. Nozik, M.C. Beard, F. Armstrong, C. F. Megarity, C.A. Schmuttenmaer, V. S. Batista, and G.W. Brudvig

Nanotechnology 32 042003 (Nov 2020) [pdf] [ref]

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M. T. Klug, R. L. Milot, J.B. Patel, T. Green, H. C. Sansom, M. D. Farrar, A. J. Ramadan, S. Martani, Z. Wang, B. Wenger, J. M. Ball, L. Langshaw, A. Petrozza, M. B. Johnston, L. M. Herz and H. J. Snaith
Energy & Environmental Science (May 2020) web pdf Show abstract

R. L. Milot, M. T. Klug, C. L. Davies, Z. Wang, H. Kraus, H. J. Snaith, M. B. Johnston, and L. M. Herz
Advanced Materials (Sept 2018) [ pdf ] [ ref ]

Optoelectronic properties are unraveled for formamidinium tin triiodide (FASnI₃) thin films, whose background hole doping density is varied through SnF₂ addition during film fabrication. Monomolecular charge‐carrier recombination exhibits both a dopant‐mediated part that grows linearly with hole doping density and remnant contributions that remain under tin‐enriched processing conditions. At hole densities near 10²⁰ cm⁻³, a strong Burstein–Moss effect increases absorption onset energies by ≈300 meV beyond the bandgap energy of undoped FASnI₃ (shown to be 1.2 eV at 5 K and 1.35 eV at room temperature). At very high doping densities (10²⁰ cm⁻³), temperature‐dependent measurements indicate that the effective charge‐carrier mobility is suppressed through scattering with ionized dopants. Once the background hole concentration is nearer 10¹⁹ cm⁻³ and below, the charge‐carrier mobility increases with decreasing temperature according to ≈T^−1.2, suggesting that it is limited mostly by intrinsic interactions with lattice vibrations. For the lowest doping concentration of 7.2 × 10¹⁸ cm⁻³, charge‐carrier mobilities reach a value of 67 cm² V⁻¹ s⁻¹ at room temperature and 470 cm² V⁻¹ s⁻¹ at 50 K. Intraexcitonic transitions observed in the THz‐frequency photoconductivity spectra at 5 K reveal an exciton binding energy of only 3.1 meV for FASnI₃, in agreement with the low bandgap energy exhibited by this perovskite.