Skip to main content

Publications

A selection of publications from 1988 to present:

[134] In-adlayers on non-polar and polar InN surfaces: Ion scattering and photoemission studies
T. D. Veal, P. D. C. King, M. Walker, C. F. McConville, H. Lu, and W. J. Schaff.
Physica B: Condensed Matter, 401-402 351 (2007)

[133] X-ray photoemission spectroscopy determination of the InN/yttria stabilized cubic-zirconia valence band offset
P. D. C. King, T. D. Veal, S. A. Hatfield, P. H. Jefferson, C. F. McConville, C. E. Kendrick, C. H. Swartz, and S. M. Durbin.
Applied Physics Letters, 91 112103 (2007)

[132] Universality of electron accumulation at wurtzite c - And a -plane and zinc-blende InN surfaces
P. D. C. King, T. D. Veal, C. F. McConville, F. Fuchs, J. Furthmu?ller, F. Bechstedt, P. Schley, R. Goldhahn, J. Scho?rmann, D. J. As, K. Lischka, D. Muto, H. Naoi, Y. Nanishi, H. Lu, and W. J. Schaff.
Applied Physics Letters, 91 092101 (2007)

[131] Photoluminescence of InNAs alloys: S-shaped temperature dependence and conduction-band nonparabolicity
M. Merrick, S. A. Cripps, B. N. Murdin, T. J. C. Hosea, T. D. Veal, C. F. McConville, and M. Hopkinson.
Physical Review B - Condensed Matter and Materials Physics, 76 075209 (2007)

[130] In adlayers on c -plane InN surfaces: A polarity-dependent study by x-ray photoemission spectroscopy
T. D. Veal, P. D. C. King, P. H. Jefferson, L. F. J. Piper, C. F. McConville, H. Lu, W. J. Schaff, P. A. Anderson, S. M. Durbin, D. Muto, H. Naoi, and Y. Nanishi.
Physical Review B - Condensed Matter and Materials Physics, 76 075313 (2007)

[129] X-ray photoemission studies of the electronic structure of single-crystalline CdO(100)
L. F. J. Piper, P. H. Jefferson, T. D. Veal, C. F. McConville, J. Zun?iga-Pe?rez, and V. Mun?oz-Sanjose?.
Superlattices and Microstructures, 42 197 (2007)

[128] Growth of dilute nitride alloys of GaInSb lattice-matched to GaSb
P. H. Jefferson, L. Buckle, B. R. Bennett, T. D. Veal, D. Walker, N. R. Wilson, L. F. J. Piper, P. A. Thomas, T. Ashley, and C. F. McConville.
Journal of Crystal Growth, 304 338 (2007)

[127] Valence band offset of InN/A1N heterojunctions measured by x-ray photoelectron spectroscopy
P. D. C. King, T. D. Veal, P. H. Jefferson, C. F. McConville, T. Wang, P. J. Parbrook, H. Lu, and W. J. Schaff.
Applied Physics Letters, 90 132105 (2007)

[126] Variation of band bending at the surface of Mg-doped InGaN: Evidence of p -type conductivity across the composition range
P. D. C. King, T. D. Veal, P. H. Jefferson, C. F. McConville, H. Lu, and W. J. Schaff.
Physical Review B - Condensed Matter and Materials Physics, 75 115312 (2007)

[125] Doping-dependence of subband energies in quantized electron accumulation at InN surfaces
T. D. Veal, L. F. J. Piper, M. R. Phillips, M. H. Zareie, H. Lu, W. J. Schaff, and C. F. McConville.
Physica Status Solidi (A) Applications and Materials, 204 536 (2007)

[124] Quantized electron accumulation states in indium nitride studied by angle-resolved photoemission spectroscopy
L. Colakerol, T. D. Veal, H. -K. Jeong, L. Plucinski, A. Demasi, T. Learmonth, P. -A. Glans, S. Wang, Y. Zhang, L. F. J. Piper, P. H. Jefferson, A. Fedorov, T. -C. Chen, T. D. Moustakas, C. F. McConville, and K. E. Smith.
Physical Review Letters, 97 237601 (2006)

[123] Transition from electron accumulation to depletion at InGaN surfaces
T. D. Veal, P. H. Jefferson, L. F. J. Piper, C. F. McConville, T. B. Joyce, P. R. Chalker, L. Considine, H. Lu, and W. J. Schaff.
Applied Physics Letters, 89 202110 (2006)

[122] Band anticrossing in GaNxSb1-x
P. H. Jefferson, T. D. Veal, L. F. J. Piper, B. R. Bennett, C. F. McConville, B. N. Murdin, L. Buckle, G. W. Smith, and T. Ashley.
Applied Physics Letters, 89 111921 (2006)

[121] Dilute antimonide nitrides for very long wavelength infrared applications
T. Ashley, L. Buckle, G. W. Smith, B. N. Murdin, P. H. Jefferson, L. F. J. Piper, T. D. Veal, and C. F. McConville.
Proceedings of SPIE - The International Society for Optical Engineering, 6206 I 62060L (2006)

[120] Initial growth of platinum on oxygen-covered Ni(1 1 0) surfaces
M. Walker, C. R. Parkinson, M. Draxler, M. G. Brown, and C. F. McConville.
Surface Science, 600 3327 (2006)

[119] Characterization of aperiodic and periodic thin Cu films formed on the five-fold surface of i- Al70 Pd21 Mn9 using medium-energy ion scattering spectroscopy
J. A. Smerdon, J. Ledieu, R. McGrath, T. C. Q. Noakes, P. Bailey, M. Draxler, C. F. McConville, T. A. Lograsso, and A. R. Ross.
Physical Review B - Condensed Matter and Materials Physics, 74 035429 (2006)

[118] Characterisation of Pt deposition on clean and oxidised Ni(1 1 0) surfaces
M. Walker, M. Draxler, C. R. Parkinson, and C. F. McConville.
Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 249 314 (2006)

[117] Formation of metallic indium during atomic hydrogen cleaning of InN(0 0 0 1) surfaces
M. Draxler, M. Walker, and C. F. McConville.
Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 249 886 (2006)

[116] InN: Fermi level stabilization by low-energy ion bombardment
L. F. J. Piper, T. D. Veal, C. F. McConville, H. Lu, and W. J. Schaff.
Physica Status Solidi (C) Current Topics in Solid State Physics, 3 1841 (2006)

[115] Determination of a correction factor for the interaction potential of He+ ions backscattered from a Cu(1 0 0) surface
M. Draxler, M. Walker, and C. F. McConville.
Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 249 812 (2006)

[114] Origin of the n-type conductivity of InN: The role of positively charged dislocations
L. F. J. Piper, T. D. Veal, C. F. McConville, H. Lu, and W. J. Schaff.
Applied Physics Letters, 88 252109 (2006)

[113] Film growth arising from the deposition of Au onto an i-Al-Pd-Mn quasicrystal: A medium energy ion scattering study
T. C. Q. Noakes, P. Bailey, M. Draxler, C. F. McConville, A. R. Ross, T. A. Lograsso, L. Leung, J. A. Smerdon, and R. McGrath.
Journal of Physics Condensed Matter, 18 5017 (2006)

[112] Electron depletion at InAs free surfaces: Doping-induced acceptorlike gap states
L. F. J. Piper, T. D. Veal, M. J. Lowe, and C. F. McConville.
Physical Review B - Condensed Matter and Materials Physics, 73 195321 (2006)

[111] Dielectric function of degenerate InSb: Beyond the hydrodynamic model
G. R. Bell, T. D. Veal, J. A. Frost, and C. F. McConville.
Physical Review B - Condensed Matter and Materials Physics, 73 153302 (2006)

[110] Inversion and accumulation layers at InN surfaces
T. D. Veal, L. F. J. Piper, W. J. Schaff, and C. F. McConville.
Journal of Crystal Growth, 288 268 (2006)

[109] Scanning tunnelling spectroscopy of quantized electron accumulation at inxGa1-xN surfaces
T. D. Veal, L. F. J. Piper, M. R. Phillips, M. H. Zareie, H. Lu, W. J. Schaff, and C. F. McConville.
Physica Status Solidi (A) Applications and Materials, 203 85 (2006)

[108] Valence-band structure of InN from x-ray photoemission spectroscopy
L. F. J. Piper, T. D. Veal, P. H. Jefferson, C. F. McConville, F. Fuchs, J. Furthmu?ller, F. Bechstedt, H. Lu, and W. J. Schaff.
Physical Review B - Condensed Matter and Materials Physics, 72 1 (2005)

[107] Electron accumulation at InN/AIN and InN/GaN interfaces
T. D. Veal, L. F. J. Piper, I. Mahboob, H. Lu, W. J. Schaff, and C. F. McConville.
Physica Status Solidi C: Conferences, 2 2246 (2005)

[106] InN{0001} polarity by ion scattering spectroscopy
M. Walker, T. D. Veal, H. Lu, W. J. Schaff, and C. F. McConville.
Physica Status Solidi C: Conferences, 2 2301 (2005)

[105] Photoluminescence spectroscopy of bandgap reduction in dilute InNAs alloys
T. D. Veal, L. F. J. Piper, P. H. Jefferson, I. Mahboob, C. F. McConville, M. Merrick, T. J. C. Hosea, B. N. Murdin, and M. Hopkinson.
Applied Physics Letters, 87 182114 (2005)

[104] Composition profiles of InAs-GaAs quantum dots determined by medium-energy ion scattering
P. D. Quinn, N. R. Wilson, S. A. Hatfield, C. F. McConville, G. R. Bell, T. C. Q. Noakes, P. Bailey, S. Al-Harthi, and F. Gard.
Applied Physics Letters, 87 153110 (2005)

[103] Band gap reduction in GaNSb alloys due to the anion mismatch
T. D. Veal, L. F. J. Piper, S. Jollands, B. R. Bennett, P. H. Jefferson, P. A. Thomas, C. F. McConville, B. N. Murdin, L. Buckle, G. W. Smith, and T. Ashley.
Applied Physics Letters, 87 132101 (2005)

[102] Atomic hydrogen cleaning of low-index GaAs surfaces
A. Khatiri, T. J. Krzyzewski, C. F. McConville, and T. S. Jones.
Journal of Crystal Growth, 282 1 (2005)

[101] Clean wurtzite InN surfaces prepared with atomic hydrogen
L. F. J. Piper, T. D. Veal, M. Walker, I. Mahboob, C. F. McConville, H. Lu, and W. J. Schaff.
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, 23 617 (2005)

[100] Photoelectron spectroscopy study of Ga1-xMnxAs(0 0 1) surface oxide and low temperature cleaning
S. A. Hatfield, T. D. Veal, C. F. McConville, G. R. Bell, K. W. Edmonds, R. P. Campion, C. T. Foxon, and B. L. Gallagher.
Surface Science, 585 66 (2005)

[99] Growth of thin platinum films on Cu(1 0 0): CAICISS, XPS and LEED studies
M. Walker, C. R. Parkinson, M. Draxler, and C. F. McConville.
Surface Science, 584 153 (2005)

[98] Compositional and structural changes in i-AlPdMn quasicrystals induced by sputtering and annealing: A medium energy ion scattering study
T. C. Q. Noakes, P. Bailey, C. F. McConville, C. R. Parkinson, M. Draxler, J. Smerdon, J. Ledieu, R. McGrath, A. R. Ross, and T. A. Lograsso.
Surface Science, 583 139 (2005)

[97] Growth of dilute GaNSb by plasma-assisted MBE
L. Buckle, B. R. Bennett, S. Jollands, T. D. Veal, N. R. Wilson, B. N. Murdin, C. F. McConville, and T. Ashley.
Journal of Crystal Growth, 278 188 (2005)

[96] Low-energy nitrogen ion implantation of InSb
I. Mahboob, T. D. Veal, and C. F. McConville.
Journal of Applied Physics, 96 4935 (2004)

[95] Temperature invariance of InN electron accumulation
L. F. J. Piper, T. D. Veal, I. Mahboob, C. F. McConville, H. Lu, and W. J. Schaff.
Physical Review B - Condensed Matter and Materials Physics, 70 115333 (2004)

[94] Core-level photoemission spectroscopy of nitrogen bonding in GaN xAs1-x alloys
T. D. Veal, I. Mahboob, L. F. J. Piper, C. F. McConville, and M. Hopkinson.
Applied Physics Letters, 85 1550 (2004)

[93] Electron spectroscopy of dilute nitrides
T. D. Veal, I. Mahboob, L. F. J. Piper, T. Ashley, M. Hopkinson, and C. F. McConville.
Journal of Physics Condensed Matter, 16 S3201 (2004)

[92] Indium nitride: Evidence of electron accumulation
T. D. Veal, I. Mahboob, L. F. J. Piper, C. F. McConville, H. Lu, and W. J. Schaff.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 22 2175 (2004)

[91] Fuchs-Kliewer phonon excitations in GaNAs alloys
T. D. Veal, I. Mahboob, L. F. J. Piper, C. F. McConville, and M. Hopkinson.
Journal of Applied Physics, 95 8466 (2004)

[90] Origin of electron accumulation at wurtzite InN surfaces
I. Mahboob, T. D. Veal, L. F. J. Piper, C. F. McConville, H. Lu, W. J. Schaff, J. Furthmu?ller, and F. Bechstedt.
Physical Review B - Condensed Matter and Materials Physics, 69 201307 (2004)

[89] Negative band gaps in dilute InNxSb1-x alloys
T. D. Veal, I. Mahboob, and C. F. McConville.
Physical Review Letters, 92 136801 (2004)

[88] Intrinsic Electron Accumulation at Clean InN Surfaces
I. Mahboob, T. D. Veal, C. F. McConville, H. Lu, and W. J. Schaff.
Physical Review Letters, 92 368041 (2004)

[87] Atomic hydrogen cleaning of GaAs(0 0 1): A scanning tunnelling microscopy study
A. Khatiri, J. M. Ripalda, T. J. Krzyzewski, G. R. Bell, C. F. McConville, and T. S. Jones.
Surface Science, 548 L1 (2004)

[86] Reaction of atomic oxygen with a Pt(1 1 1) surface: Chemical and structural determination using XPS, CAICISS and LEED
C. R. Parkinson, M. Walker, and C. F. McConville.
Surface Science, 545 19 (2003)

[85] Sulphur-induced electron accumulation on InAs: A comparison of the (0 0 1) and (1 1 1)B surfaces
M. J. Lowe, T. D. Veal, A. P. Mowbray, and C. F. McConville.
Surface Science, 544 320 (2003)

[84] Electron dynamics in InNxSb1-x
I. Mahboob, T. D. Veal, and C. F. McConville.
Applied Physics Letters, 83 2169 (2003)

[83] Effect of hydrogen in dilute InNxSb1-x alloys grown by molecular beam epitaxy
T. D. Veal, I. Mahboob, C. F. McConville, T. M. Burke, and T. Ashley.
Applied Physics Letters, 83 1776 (2003)

[82] Magnetic properties of praseodymium ions in Na2O-Pr2O3-SiO2 glasses
A. Mekki, Kh. A. Ziq, D. Holland, and C. F. McConville.
Journal of Magnetism and Magnetic Materials, 260 60 (2003)

[81] Determination of the substitutional nitrogen content and the electron effective mass in InNxSb1-x (001) epitaxial layers
I. Mahboob, T. D. Veal, and C. F. McConville.
IEE Proceedings: Optoelectronics, 150 102 (2003)

[80] Determination of the variation in sputter yield in the SIMS transient region using MEIS
M. G. Dowsett, T. J. Ormsby, F. S. Gard, S. H. Al-Harthi, B. Guzma?n, C. F. McConville, T. C. Q. Noakes, and P. Bailey.
Applied Surface Science, 203-204 363 (2003)

[79] Passivation and reconstruction-dependent electron accumulation at sulphur treated InAs(0 0 1) surfaces
M. J. Lowe, T. D. Veal, C. F. McConville, G. R. Bell, S. Tsukamoto, and N. Koguchi.
Surface Science, 523 179 (2003)

[78] Poly(methylmethacrylate-dimethylsiloxane) triblock copolymers synthesized by transition metal mediated living radical polymerization: Bulk and surface characterization
L. Bes, K. Huan, E. Khoshdel, M. J. Lowe, C. F. McConville, and D. M. Haddleton.
European Polymer Journal, 39 5 (2003)

[77] Interaction of trimethyl based metalorganic precursors on InSb(1 0 0)-c(8 × 2)
C. F. McConville, and T. S. Jones.
Surface Science, 515 403 (2002)

[76] Determination of the erosion rate in the transient region of an ultralow energy secondary ion mass spectrometry profile using medium energy ion scattering
C. F. McConville, S. H. Al-Harthi, M. G. Dowsett, F. S. Gard, T. J. Ormsby, B. Guzman, T. C. Q. Noakes, and P. Bailey.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 20 1690 (2002)

[75] Plasmon damping in molecular beam epitaxial-grown InAs(100)
T. D. Veal, G. R. Bell, and C. F. McConville.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 20 1766 (2002)

[74] Extreme band bending at MBE-grown InAs(0 0 1) surfaces induced by in situ sulphur passivation
M. J. Lowe, T. D. Veal, C. F. McConville, G. R. Bell, S. Tsukamoto, and N. Koguchi.
Journal of Crystal Growth, 237-239 196 (2002)

[73] Establishing an accurate depth-scale calibration in the top few nanometers of an ultrashallow implant profile
M. G. Dowsett, S. H. Al-Harthi, T. J. Ormsby, B. Guzma?n, F. S. Gard, T. C. Q. Noakes, P. Bailey, and C. F. McConville.
Physical Review B - Condensed Matter and Materials Physics, 65 113412 (2002)

[72] HREELS and photoemission study of GaSb(1 0 0)-(1 × 3) surfaces prepared by optimal atomic hydrogen cleaning
T. D. Veal, M. J. Lowe, and C. F. McConville.
Surface Science, 499 251 (2002)

[71] An XPS and physical property study of sodium praseodymium silicate glass structure
A. Mekki, K. A. Ziq, D. Holland, and C. F. McConville.
Physics and Chemistry of Glasses, 43 41 (2002)

[70] Atomic environments in binary lead silicate and ternary alkali lead silicate glasses
I. A. Gee, D. Holland, and C. F. McConville.
Physics and Chemistry of Glasses, 42 339 (2001)

[69] Profiling of electron accumulation layers in the near-surface region of InAs (110)
T. D. Veal, and C. F. McConville.
Physical Review B - Condensed Matter and Materials Physics, 64 085311 (2001)

[68] Role of surface science in the determination of glass structure
D. Holland, I. A. Gee, A. Mekki, and C. F. McConville.
Physics and Chemistry of Glasses, 42 247 (2001)

[67] X-ray photoelectron spectroscopy study of the germanate anomaly in the Na2O-GeO2 system
I. A. Gee, R. Hussin, D. Holland, C. F. McConville, and A. Mekki.
Physics and Chemistry of Glasses, 41 175 (2000)

[66] Temperature-dependent two-dimensional plasmons at clean and hydrogenated Ge(001) surfaces
J. Eggeling, G. R. Bell, T. S. Jones, T. D. Veal, and C. F. McConville.
Physical Review B - Condensed Matter and Materials Physics, 62 7330 (2000)

[65] Controlled oxide removal for the preparation of damage-free InAs(110) surfaces
T. D. Veal, and C. F. McConville.
Applied Physics Letters, 77 1665 (2000)

[64] Structural and magnetic properties of sodium iron germanate glasses
A. Mekki, D. Holland, Kh. A. Ziq, and C. F. McConville.
Journal of Non-Crystalline Solids, 272 179 (2000)

[63] Structure determination of Ag(111)(?3× ?3)R30°-Sb by low-energy electron diffraction
E. A. Soares, C. Bittencourt, V. B. Nascimento, V. E. Carvalho, C. M. C. Castilho, C. F. McConville, A. V. Carvalho, and D. P. Woodruff.
Physical Review B - Condensed Matter and Materials Physics, 61 13983 (2000)

[62] Study of diffusion and defects by medium-energy coaxial impact-collision ion scattering spectroscopy
T. Kobayashi, C. F. McConville, J. Nakamura, G. Dorenbos, H. Sone, T. Katayama, and M. Aono.
Diffusion and Defect Data. Pt A Defect and Diffusion Forum, 183 207 (2000)

[61] Species intermixing and phase transitions on the reconstructed (001) surfaces of GaAs and InAs
G. R. Bell, J. G. Belk, C. F. McConville, and T. S. Jones.
Physical Review B - Condensed Matter and Materials Physics, 59 2947 (1999)

[60] Evidence from scanning tunneling microscopy in support of a structural model for the InSb(001 )-c(8 × 2) surface
A. A. Davis, R. G. Jones, G. Falkenberg, L. Seehofer, R. L. Johnson, and C. F. McConville.
Applied Physics Letters, 75 1938 (1999)

[59] Structure of sodium iron silicate glass - a multi-technique approach
D. Holland, A. Mekki, I. A. Gee, C. F. McConville, J. A. Johnson, C. E. Johnson, P. Appleyard, and M. Thomas.
Journal of Non-Crystalline Solids, 253 192 (1999)

[58] Depth profile and lattice location analysis of Sb atoms in Si/Sb(?-doped)/ Si(001) structures using medium-energy ion scattering spectroscopy
T. Kobayashi, C. F. McConville, G. Dorenbos, M. Iwaki, and M. Aono.
Applied Physics Letters, 74 673 (1999)

[57] Stoichiometry and discommensuration on InxGa1-xAs/GaAs(001) reconstructed surfaces: A quantitative x-ray diffuse-scattering study
Y. Garreau, K. Ai?d, M. Sauvage-Simkin, R. Pinchaux, C. F. McConville, T. S. Jones, J. L. Sudijono, and E. S. Tok.
Physical Review B - Condensed Matter and Materials Physics, 58 16177 (1998)

[56] Atomic structure of the InSb(001)-c(4 × 4) reconstruction determined by X-ray diffraction
N. Jones, C. Norris, C. L. Nicklin, P. Steadman, J. S. G. Taylor, A. D. Johnson, and C. F. McConville.
Surface Science, 398 105 (1998)

[55] Characterization of thiolate species formation on Cu(111) using soft x-ray photoelectron spectroscopy
M. S. Kariapper, G. F. Grom, G. J. Jackson, C. F. McConville, and D. P. Woodruff.
Journal of Physics Condensed Matter, 10 8661 (1998)

[54] Surface morphology during strain relaxation in the growth of InAs on GaAs(110)
J. G. Belk, D. W. Pashley, C. F. McConville, B. A. Joyce, and T. S. Jones.
Surface Science, 410 82 (1998)

[53] Structure and stability of the Si(001) c(4 × 4)-Sb surface
R. J. Dixon, C. F. McConville, S. J. Jenkins, and G. P. Srivastava.
Physical Review B - Condensed Matter and Materials Physics, 57 R12701 (1998)

[52] Spatial variation of plasmon damping near the polar surfaces of InAs and InSb
G. R. Bell, T. S. Jones, and C. F. McConville.
Surface Science, 405 280 (1998)

[51] Ab initio calculation of geometry and bonding for overlaid and inlaid models of Si(001)/Sb(0.25 ML)-c(4 × 4)
S. J. Jenkins, G. P. Srivastava, R. J. Dixon, and C. F. McConville.
Surface Science, 402-404 645 (1998)

[50] Atomic hydrogen cleaning of polar III-V semiconductor surfaces
G. R. Bell, N. S. Kaijaks, R. J. Dixon, and C. F. McConville.
Surface Science, 401 125 (1998)

[49] Magnetisation and XPS studies of the redox state of copper in SiO2-Na2O-CuO glasses
A. Mekki, D. Holland, K. Ziq, and C. F. McConville.
Physics and Chemistry of Glasses, 39 45 (1998)

[48] An X-ray diffraction study of oxide removal from InSb(001) substrates
N. Jones, C. Norris, C. L. Nicklin, P. Steadman, J. S. G. Taylor, C. F. McConville, and A. D. Johnson.
Applied Surface Science, 123-124 141 (1998)

[47] Accumulation layer profiles at InAs polar surfaces
G. R. Bell, T. S. Jones, and C. F. McConville.
Applied Physics Letters, 71 3688 (1997)

[46] Surface-plasmon modes in Zn-doped InAs(001) and (111)
G. R. Bell, C. F. McConville, and T. S. Jones.
Physical Review B - Condensed Matter and Materials Physics, 56 15995 (1997)

[45] XPS and magnetization studies of cobalt sodium silicate glasses
A. Mekki, D. Holland, Kh. Ziq, and C. F. McConville.
Journal of Non-Crystalline Solids, 220 267 (1997)

[44] Surface atomic configurations due to dislocation activity in InAs/GaAs(110) heteroepitaxy
J. G. Belk, D. W. Pashley, C. F. McConville, J. L. Sudijono, B. A. Joyce, and T. S. Jones.
Physical Review B - Condensed Matter and Materials Physics, 56 10289 (1997)

[43] Surface alloying at InAs-GaAs interfaces grown on (001) surfaces by molecular beam epitaxy
J. G. Belk, C. F. McConville, J. L. Sudijono, T. S. Jones, and B. A. Joyce.
Surface Science, 387 213 (1997)

[42] X-ray photoelectron spectroscopy study of copper sodium silicate glass surfaces
A. Mekki, D. Holland, and C. F. McConville.
Journal of Non-Crystalline Solids, 215 271 (1997)

[41] Scanning tunneling microscopy studies of strain relaxation and misfit dislocations in InAs layers grown on GaAs(110) and GaAs(111)A
J. G. Belk, J. L. Sudijono, H. Yamaguchi, X. M. Zhang, D. W. Pashley, C. F. McConville, T. S. Jones, and B. A. Joyce.
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, 15 915 (1997)

[40] Limitations of step profile models in describing the space-charge distribution near semiconductor surfaces
G. R. Bell, C. F. McConville, C. P. A. Mulcahy, and T. S. Jones.
Journal of Physics Condensed Matter, 9 2903 (1997)

[39] Structural investigation of ordered Sb adsorption phases on Ag(111) using coaxial impact collision ion scattering spectroscopy
T. C. Q. Noakes, D. A. Hutt, C. F. McConville, and D. P. Woodruff.
Surface Science, 372 117 (1997)

[38] Direct evidence for the step density model in the initial stages of the layer-by-layer homoepitaxial growth of GaAs(111)A
D. M. Holmes, J. L. Sudijono, C. F. McConville, T. S. Jones, and B. A. Joyce.
Surface Science, 370 L173 (1997)

[37] Plasmon excitations and accumulation layers in heavily doped InAs(001)
G. R. Bell, C. F. McConville, and T. S. Jones.
Physical Review B - Condensed Matter and Materials Physics, 54 2654 (1996)

[36] An XPS study of iron sodium silicate glass surfaces
A. Mekki, D. Holland, C. F. McConville, and M. Salim.
Journal of Non-Crystalline Solids, 208 267 (1996)

[35] Atomic hydrogen cleaning of GaSb(001) surfaces
G. R. Bell, and C. F. McConville.
Applied Physics Letters, 69 2695 (1996)

[34] Spatial distribution of in during the initial stages of growth of InAs on GaAs(001)-c(4 × 4)
J. G. Belk, J. L. Sudijono, D. M. Holmes, C. F. McConville, T. S. Jones, and B. A. Joyce.
Surface Science, 365 735 (1996)

[33] Influence of surfactant coverage on epitaxial growth of Ge on Si(001)
M. Katayama, T. Nakayama, M. Aono, and C. F. McConville.
Physical Review B - Condensed Matter and Materials Physics, 54 8600 (1996)

[32] Coaxial impact collision ion scattering spectroscopy studies of Sb adsorption on the two-domain (100) surface of silicon
T. C. Q. Noakes, and C. F. McConville.
Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 118 462 (1996)

[31] Time-of-flight medium energy ion scattering study of epitaxial Si/Si1-xGex superlattice structures
C. F. McConville, T. C. Q. Noakes, S. Sugden, P. K. Hucknell, and C. J. Sofield.
Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 118 573 (1996)

[30] Plasmon excitations and the effects of surface preparation in n-type InAs(001) studied by electron energy loss spectroscopy
G. R. Bell, C. F. McConville, and T. S. Jones.
Applied Surface Science, 104-105 17 (1996)

[29] Structural and compositional study of Si1-xGex multilayer structures using medium energy ion scattering
P. K. Hucknall, S. Sugden, C. J. Sofield, T. C. Q. Noakes, and C. F. McConville.
Materials Research Society Symposium - Proceedings, 379 229 (1995)

[28] Probing the interfacial and sub-surface structure of Si/Si1-xGex multilayers
S. Sugden, C. J. Sofield, T. C. Q. Noakes, R. A. A. Kubiak, and C. F. McConville.
Applied Physics Letters, 2849 (1995)

[27] Depletion layers, plasmon dispersion, and the effects of temperature in degenerate InSb(100): A study by electron-energy-loss spectroscopy
T. S. Jones, M. O. Schweitzer, N. V. Richardson, G. R. Bell, and C. F. McConville.
Physical Review B, 51 17675 (1995)

[26] STM: seeing is believing
J. L. Sudijono, C. F. McConville, and T. S. Jones.
III-Vs Review, 8 37 (1995)

[25] Layered controlled growth of oxide superconductors
MakiKawai, Z. -Y. Liu, T. Hanada, M. Katayama, M. Aono, and C. F. McConville.
Applied Surface Science, 82-83 487 (1994)

[24] Demonstration of quantum confinement in InSb-In1-xAl xSb multiquantum wells using photoluminescence spectroscopy
M. K. Saker, D. M. Whittaker, M. S. Skolnick, C. F. McConville, C. R. Whitehouse, S. J. Barnett, A. D. Pitt, A. G. Cullis, and G. M. Williams.
Applied Physics Letters, 65 1118 (1994)

[23] Surface reconstructions of InSb(100) observed by scanning tunneling microscopy
C. F. McConville, T. S. Jones, F. M. Leibsle, S. M. Driver, T. C. Q. Noakes, M. O. Schweitzer, and N. V. Richardson.
Physical Review B, 50 14965 (1994)

[22] Oscillatory evolution of an ion bombarded InSb(100) surface
I. N. Evdokimov, R. Valizadeh, D. G. Armour, N. V. Richardson, and C. F. McConville.
Surface Science, 318 281 (1994)

[21] Adsorption of Sb on Ag (111) studied using LEED, AES and EPS
T. C. Q. Noakes, D. A. Hutt, and C. F. McConville.
Surface Science, 307-9 101 (1994)

[20] Direct observation of Sb dimers on InSb(100)-c(4 × 4)
C. F. McConville, T. S. Jones, F. M. Leibsle, and N. V. Richardson.
Surface Science, 303 L373 (1994)

[19] Damage-induced changes in the electronic properties of InSb(100): Implications for surface preparation
W. T. Yuen, M. O. Schweitzer, T. S. Jones, C. F. McConville, E. A. Johnson, A. MacKinnon, N. V. Richardson, and R. A. Stradling.
Semiconductor Science and Technology, 8 088 (1993)

[18] Sodium-promoted oxidation of Al(111) studied by core-level photoemission spectroscopy
C. F. McConville, A. B. Hayden, J. Robinson, and D. P. Woodruff.
Journal of Physics: Condensed Matter, 5 012 (1993)

[17] Imaging ion-bombarded III-V semiconductor surfaces: A scanning tunnelling microscopy study of InSb(100)
M. O. Schweitzer, F. M. Leibsle, T. S. Jones, C. F. McConville, and N. V. Richardson.
Semiconductor Science and Technology, 8 076 (1993)

[16] Deposition of a thin Au film on InSb(100)
M. O. Schweitzer, T. S. Jones, C. F. McConville, and N. V. Richardson.
Surface Science, 287-88 545 (1993)

[15] STM study of the InSb(100)-c(8 × 2) surface
M. O. Schweitzer, F. M. Leibsle, T. S. Jones, C. F. McConville, and N. V. Richardson.
Surface Science, 280 63 (1993)

[14] Temperature-dependent plasmons in InSb
M. O. Schweitzer, M. Q. Ding, N. V. Richardson, T. S. Jones, and C. F. McConville.
Journal of Physics: Condensed Matter, 3 042 (1991)

[13] Ambient temperature diodes and field-effect transistors in InSb/In 1-xAlxSb
T. Ashley, A. B. Dean, C. T. Elliott, C. F. McConville, G. J. Pryce, and C. R. Whitehouse.
Applied Physics Letters, 59 1761 (1991)

[12] Low energy ion beam damage of semiconductor surfaces. A detailed study of InSb(100) using electron energy loss spectroscopy
T. S. Jones, M. Q. Ding, N. V. Richardson, and C. F. McConville.
Surface Science, 247 1 (1991)

[11] Multilayer InSb diodes grown by molecular beam epitaxy for near ambient temperature operation
T. Ashley, A. B. Dean, C. T. Elliott, M. R. Houlton, C. F. McConville, H. A. Tarry, and C. R. Whitehouse.
Proceedings of SPIE - The International Society for Optical Engineering, 1361 238 (1991)

[10] Effects of surface damage on surface plasmon excitations in doped InSb(100)
T. S. Jones, M. Q. Ding, N. V. Richardson, and C. F. McConville.
Applied Surface Science, 45 85 (1990)

[9] Electron energy-loss studies of InSb(100)
T. S. Jones, M. R. Ashton, N. V. Richardson, and C. F. McConville.
Journal of Physics: Condensed Matter, 1 044 (1989)

[8] InSb n-channel enhancement mode MISFET grown by molecular beam epitaxy
T. Ashley, A. B. Dean, C. T. Elliott, C. F. McConville, and C. R. Whitehouse.
Electronics Letters, 25 289 (1989)

[7] Interfacial studies and electrical characterisation of heteroepitaxial InSb on GaAs (100) grown by MBE
C. F. McConville, C. R. Whitehouse, G. M. Williams, A. G. Cullis, T. Ashley, M. S. Skolnick, G. T. Brown, and S. J. Courtney.
Journal of Crystal Growth, 95 228 (1989)

[6] Photoelectron diffraction from oxygen-containing species on Cu(100)
D. P. Woodruff, A. D. Kilcoyne, C. F. McConville, Th. Linder, J. Somers, M. Surman, and A. M. Bradshaw.
Vacuum, 38 305 (1988)

[5] Heteroepitaxial growth of InSb on (100)GaAs using molecular beam epitaxy
G. M. Williams, C. R. Whitehouse, C. F. McConville, A. G. Cullis, T. Ashley, S. J. Courtney, and C. T. Elliott.
Applied Physics Letters, 53 1189 (1988)

[4] Molecular-beam growth of homoepitaxial InSb photovoltaic detectors
T. Ashley, A. B. Dean, C. T. Elliott, C. F. McConville, and C. R. Whitehouse.
Electronics Letters, 24 1270 (1988)

[3] Simple x-ray standing-wave technique and its application to the investigation of the Cu(111) (3 3) R30°-Cl structure
D. P. Woodruff, D. L. Seymour, C. F. McConville, C. E. Riley, M. D. Crapper, N. P. Prince, and R. G. Jones.
Physical Review Letters, 58 1460 (1987)

[2] Photoabsorption shape resonance in the adsorption system CO/K/Cu(100): A dilemma
G. Paolucci, M. Surman, K. C. Prince, L. Sorba, A. M. Bradshaw, C. F. McConville, and D. P. Woodruff.
Physical Review B, 34 1340 (1986)

[1] Electronic structure of the (2×2)C 4g carbidic phase on Ni{100}
C. F. McConville, D. P. Woodruff, S. D. Kevan, M. Weinert, and J. W. Davenport.
Physical Review B, 34 2199 (1986)