Chemical vapour deposition forms a thin film on a substrate by using the reaction of vapor phase chemicals containing the required constituents of the layer (1). CVD offers a much faster growth rate than many other techniques, e.g molecular beam epitaxy.

 CVD Process Flow Chart

Growth of Silicon by CVD

The simplest available reactant for growing silicon films via CVD is silane (). Silane undergoes the following reactions:

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References

[1] Handbook of semiconductor manufacturing technology, Second Edition edited by Robert Doering and Yoshio Nishi. p 13-1

[2] Maiti et al, 2001